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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | Number of Pins | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF7707TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | 20V | 1.5W Ta | P-Channel | 2361pF @ 15V | 22mOhm @ 7A, 4.5V | 1.2V @ 250μA | 7A Ta | 47nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7805ATR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7805atr-datasheets-5907.pdf | 8-SOIC (0.154, 3.90mm Width) | 30V | 2.5W Ta | N-Channel | 11m Ω @ 7A, 4.5V | 3V @ 250μA | 13A Ta | 31nC @ 5V | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3711STRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20V | 3.1W Ta 120W Tc | N-Channel | 2980pF @ 10V | 6m Ω @ 15A, 10V | 3V @ 250μA | 110A Tc | 44nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7420TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | Other Transistors | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | 2.5W Ta | 11.5A | 46A | 0.014Ohm | P-Channel | 3529pF @ 10V | 14m Ω @ 11.5A, 4.5V | 900mV @ 250μA | 11.5A Tc | 38nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| IRF7807VD2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | 8-SOIC (0.154, 3.90mm Width) | 30V | 2.5W Ta | N-Channel | 25m Ω @ 7A, 4.5V | 1V @ 250μA | 8.3A Ta | 14nC @ 4.5V | Schottky Diode (Isolated) | 4.5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7703TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | 40V | 1.5W Ta | P-Channel | 5220pF @ 25V | 28mOhm @ 6A, 10V | 3V @ 250μA | 6A Ta | 62nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7477TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | 8-SOIC (0.154, 3.90mm Width) | EAR99 | 30V | 2.5W Ta | N-Channel | 2710pF @ 15V | 8.5m Ω @ 14A, 10V | 2.5V @ 250μA | 14A Ta | 38nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP31N50L | Vishay Siliconix | $2.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp31n50l-datasheets-5920.pdf | 500V | 31A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Contains Lead | 38.000013g | 3 | No | 1 | Single | 460W | 1 | TO-247-3 | 5nF | 28 ns | 115ns | 53 ns | 54 ns | 31A | 30V | 500V | 460W Tc | 180mOhm | N-Channel | 5000pF @ 25V | 180mOhm @ 19A, 10V | 5V @ 250μA | 31A Tc | 210nC @ 10V | 180 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||
| IRF7704TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | 40V | 1.5W Ta | P-Channel | 3150pF @ 25V | 46mOhm @ 4.6A, 10V | 3V @ 250μA | 4.6A Ta | 38nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7807VD1TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | 8-SOIC (0.154, 3.90mm Width) | YES | FET General Purpose Power | Single | 30V | 2.5W Ta | 8.3A | N-Channel | 25m Ω @ 7A, 4.5V | 3V @ 250μA | 8.3A Ta | 14nC @ 4.5V | Schottky Diode (Isolated) | 4.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7451 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | 8541.29.00.95 | e0 | TIN LEAD | YES | DUAL | GULL WING | 245 | 30 | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150V | 150V | 2.5W Ta | MS-012AA | 3.6A | 28A | 0.09Ohm | 210 mJ | N-Channel | 990pF @ 25V | 90m Ω @ 2.2A, 10V | 5.5V @ 250μA | 3.6A Ta | 41nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IRF7423TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | 30V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7451TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150V | 150V | 2.5W Ta | MS-012AA | 3.6A | 28A | 0.09Ohm | 210 mJ | N-Channel | 990pF @ 25V | 90m Ω @ 2.2A, 10V | 5.5V @ 250μA | 3.6A Ta | 41nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IRF5803TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | SOT-23-6 Thin, TSOT-23-6 | EAR99 | e3 | Matte Tin (Sn) | YES | NOT SPECIFIED | NOT SPECIFIED | Other Transistors | Single | 40V | 2W Ta | 3.4A | P-Channel | 1110pF @ 25V | 112m Ω @ 3.4A, 10V | 3V @ 250μA | 3.4A Ta | 37nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7700 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | 8-TSSOP (0.173, 4.40mm Width) | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.5W Tc | MO-153AA | 8.6A | 68A | 0.015Ohm | P-Channel | 4300pF @ 15V | 15m Ω @ 8.6A, 4.5V | 1.2V @ 250μA | 8.6A Tc | 89nC @ 5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| IRF7450TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 2.5W Ta | MS-012AA | 2.5A | 20A | 0.17Ohm | 230 mJ | N-Channel | 940pF @ 25V | 170m Ω @ 1.5A, 10V | 5.5V @ 250μA | 2.5A Ta | 39nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IRF7701TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7701-datasheets-5556.pdf | 8-TSSOP (0.173, 4.40mm Width) | 12V | 1.5W Ta | P-Channel | 5050pF @ 10V | 11m Ω @ 10A, 4.5V | 1.2V @ 250μA | 10A Tc | 100nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7240TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7240tr-datasheets-5814.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | ULTRA LOW RESISTANCE | 8541.21.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 2.5W Ta | MS-012AA | 10.5A | 43A | 0.015Ohm | P-Channel | 9250pF @ 25V | 15m Ω @ 10.5A, 10V | 3V @ 250μA | 10.5A Ta | 110nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF7471TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7471tr-datasheets-5819.pdf | 8-SOIC (0.154, 3.90mm Width) | 40V | 2.5W Ta | N-Channel | 2820pF @ 20V | 13m Ω @ 10A, 10V | 3V @ 250μA | 10A Ta | 32nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7470TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7470tr-datasheets-5824.pdf | 40V | 11A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 8 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | 1.9ns | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta | MS-012AA | 0.013Ohm | 300 mJ | N-Channel | 3430pF @ 20V | 13m Ω @ 10A, 10V | 2V @ 250μA | 10A Ta | 44nC @ 4.5V | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||
| IRF1407S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | HIGH RELIABILITY, ULTRA LOW RESISTANCE | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 3.8W Ta 200W Tc | 75A | 520A | 0.0078Ohm | 390 mJ | N-Channel | 5600pF @ 25V | 7.8m Ω @ 78A, 10V | 4V @ 250μA | 100A Tc | 250nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFPS40N50L | Vishay Siliconix | $9.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfps40n50l-datasheets-5766.pdf | TO-274AA | 16.1mm | 20.8mm | 5.3mm | 38.000013g | 3 | No | 1 | Single | SUPER-247™ (TO-274AA) | 8.11nF | 27 ns | 170ns | 69 ns | 50 ns | 46A | 30V | 500V | 540W Tc | 100mOhm | 500V | N-Channel | 8110pF @ 25V | 100mOhm @ 28A, 10V | 5V @ 250μA | 46A Tc | 380nC @ 10V | 100 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IRL1404L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN OVER NICKEL | NO | SINGLE | 260 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 3.8W Ta 200W Tc | 160A | 640A | 0.004Ohm | 520 mJ | N-Channel | 6600pF @ 25V | 4m Ω @ 95A, 10V | 3V @ 250μA | 160A Tc | 140nC @ 5V | 4.3V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF1407STRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | HIGH RELIABILITY, ULTRA LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 3.8W Ta 200W Tc | 75A | 520A | 0.0078Ohm | 390 mJ | N-Channel | 5600pF @ 25V | 7.8m Ω @ 78A, 10V | 4V @ 250μA | 100A Tc | 250nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRF7425TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | -20V | -15A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 8 | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | 20ns | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 2.5W Ta | MS-012AA | 60A | P-Channel | 7980pF @ 15V | 8.2m Ω @ 15A, 4.5V | 1.2V @ 250μA | 15A Ta | 130nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||
| IRF1607 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | TO-220-3 | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 380W Tc | TO-220AB | 75A | 570A | 0.0075Ohm | 1250 mJ | N-Channel | 7750pF @ 25V | 7.5m Ω @ 85A, 10V | 4V @ 250μA | 142A Tc | 320nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF7426TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 20V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3314STRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 150V | N-Channel | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3709STRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.1W Ta 120W Tc | 75A | 360A | 0.009Ohm | 382 mJ | N-Channel | 2672pF @ 16V | 9m Ω @ 15A, 10V | 3V @ 250μA | 90A Tc | 41nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFR12N25D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfu12n25d-datasheets-5702.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | EAR99 | 250V | 144W Tc | N-Channel | 810pF @ 25V | 260m Ω @ 8.4A, 10V | 5V @ 250μA | 14A Tc | 35nC @ 10V | 10V | ±30V |
