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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRLR014NTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | TO-252-3, DPak (2 Leads + Tab), SC-63 | EAR99 | YES | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Single | 55V | 28W Tc | 10A | N-Channel | 265pF @ 25V | 140m Ω @ 6A, 10V | 1V @ 250μA | 10A Tc | 7.9nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3706 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 88W Tc | TO-252AA | 30A | 280A | 0.009Ohm | 220 mJ | N-Channel | 2410pF @ 10V | 9m Ω @ 15A, 10V | 2V @ 250μA | 75A Tc | 35nC @ 4.5V | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFU3708 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | TO-251-3 Short Leads, IPak, TO-251AA | NOT SPECIFIED | NOT SPECIFIED | 30V | 87W Tc | N-Channel | 2417pF @ 15V | 12.5m Ω @ 15A, 10V | 2V @ 250μA | 61A Tc | 24nC @ 4.5V | 2.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7706 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | -30V | -7A | 8-TSSOP (0.173, 4.40mm Width) | Contains Lead | 1.51W | Other Transistors | 7A | Single | 30V | 1.51W Ta | 7A | -30V | P-Channel | 2211pF @ 25V | 22m Ω @ 7A, 10V | 2.5V @ 250μA | 7A Ta | 72nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7726TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.79W Ta | 7A | 28A | 0.026Ohm | P-Channel | 2204pF @ 25V | 26m Ω @ 7A, 10V | 2.5V @ 250μA | 7A Ta | 69nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT52N30Q | IXYS | $14.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh52n30q-datasheets-5986.pdf | 300V | 52A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 8 Weeks | 60MOhm | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 360W | 1 | FET General Purpose Power | R-PSSO-G2 | 60ns | 25 ns | 80 ns | 52A | 20V | SILICON | DRAIN | 360W Tc | 208A | 300V | N-Channel | 5300pF @ 25V | 60m Ω @ 500mA, 10V | 4V @ 4mA | 52A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFU3707 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | e3 | MATTE TIN OVER NICKEL | NO | SINGLE | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 87W Tc | 30A | 220A | 0.0095Ohm | 42 mJ | N-Channel | 1990pF @ 15V | 13m Ω @ 15A, 10V | 3V @ 250μA | 61A Tc | 19nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFX44N60 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/ixys-ixfk44n60-datasheets-5258.pdf | 600V | 44A | TO-247-3 | Lead Free | 3 | 8 Weeks | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 560W | 1 | FET General Purpose Power | 50ns | 40 ns | 100 ns | 44A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 600V | N-Channel | 8900pF @ 25V | 130m Ω @ 22A, 10V | 4.5V @ 8mA | 44A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFK34N80 | IXYS | $9.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk34n80-datasheets-5290.pdf | 800V | 34A | TO-264-3, TO-264AA | Lead Free | 3 | 8 Weeks | 240mOhm | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 45ns | 40 ns | 100 ns | 34A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 250 ns | 800V | N-Channel | 7500pF @ 25V | 240m Ω @ 17A, 10V | 5V @ 8mA | 34A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFN26N90 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn26n90-datasheets-5292.pdf | 900V | 26A | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 44g | No SVHC | 300mOhm | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 2.5kV | 35ns | 24 ns | 130 ns | 26A | 20V | 900V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 5V | 600W Tc | 104A | 900V | N-Channel | 10800pF @ 25V | 5 V | 300m Ω @ 13A, 10V | 5V @ 8mA | 26A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXFX34N80 | IXYS | $3.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfk34n80-datasheets-5290.pdf | 800V | 34A | TO-247-3 | Lead Free | 3 | 8 Weeks | 240MOhm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 45ns | 40 ns | 100 ns | 34A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 800V | N-Channel | 7500pF @ 25V | 240m Ω @ 17A, 10V | 5V @ 8mA | 34A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFR44N60 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfr44n60-datasheets-5296.pdf | 600V | 38A | ISOPLUS247™ | Lead Free | 3 | 8 Weeks | 130MOhm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 55ns | 45 ns | 110 ns | 38A | 20V | SILICON | ISOLATED | SWITCHING | 400W Tc | 60A | 600V | N-Channel | 8900pF @ 25V | 130m Ω @ 22A, 10V | 4.5V @ 4mA | 38A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFN120N20 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/ixys-ixfn120n20-datasheets-5298.pdf | 200V | 120A | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | No SVHC | 17MOhm | 3 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 55ns | 40 ns | 110 ns | 120A | 20V | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 600W Tc | 250 ns | 480A | 200V | N-Channel | 9100pF @ 25V | 4 V | 17m Ω @ 500mA, 10V | 4V @ 8mA | 120A Tc | 360nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFK120N20 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfx120n20-datasheets-8098.pdf | 200V | 120A | TO-264-3, TO-264AA | Lead Free | 3 | 8 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 560W | 1 | FET General Purpose Power | 65ns | 35 ns | 110 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 480A | 200V | N-Channel | 9100pF @ 25V | 17m Ω @ 60A, 10V | 4V @ 8mA | 120A Tc | 300nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFT40N30Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh40n30q-datasheets-8102.pdf | 300V | 40A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 80MOhm | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 35ns | 12 ns | 40 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 300V | N-Channel | 3100pF @ 25V | 80m Ω @ 500mA, 10V | 4V @ 4mA | 40A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFK24N100 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixfx24n100-datasheets-7466.pdf | 1kV | 24A | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 8 Weeks | 390MOhm | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 560W | 1 | FET General Purpose Power | 35 ns | 35ns | 21 ns | 75 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 560W Tc | 96A | 1kV | N-Channel | 8700pF @ 25V | 390m Ω @ 12A, 10V | 5.5V @ 8mA | 24A Tc | 267nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFN24N100 | IXYS | $41.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Panel, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn24n100-datasheets-5306.pdf | 1kV | 24A | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.42mm | Lead Free | 4 | 4 Weeks | 40g | No SVHC | 390mOhm | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | Single | 600W | 1 | FET General Purpose Power | R-PUFM-X4 | 2.5kV | 35 ns | 35ns | 21 ns | 75 ns | 24A | 20V | 1kV | SILICON | ISOLATED | SWITCHING | 1000V | 5.5V | 568W Tc | 250 ns | 250 ns | 96A | 1kV | N-Channel | 8700pF @ 25V | 5.5 V | 390m Ω @ 12A, 10V | 5.5V @ 8mA | 24A Tc | 267nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| IXFR24N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfr24n100-datasheets-5308.pdf | 1kV | 22A | ISOPLUS247™ | Lead Free | 3 | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 400W | 1 | FET General Purpose Power | 35ns | 21 ns | 75 ns | 22A | 20V | SILICON | ISOLATED | SWITCHING | 1000V | 416W Tc | 96A | 1kV | N-Channel | 8700pF @ 25V | 390m Ω @ 12A, 10V | 5.5V @ 8mA | 22A Tc | 267nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRL3103D2STRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30V | N-Channel | 2300pF @ 25V | 14m Ω @ 32A, 10V | 54A Tc | 44nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT32N50Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixft32n50q-datasheets-5314.pdf | 500V | 32A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 8 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 416W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 42ns | 20 ns | 75 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 128A | 0.16Ohm | 1500 mJ | 500V | N-Channel | 4925pF @ 25V | 160m Ω @ 16A, 10V | 4.5V @ 4mA | 32A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRL3303D1STRR | Vishay Siliconix | $8.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3303-datasheets-8670.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 870pF | 38A | 30V | 68W Tc | N-Channel | 870pF @ 25V | 26mOhm @ 20A, 10V | 1V @ 250μA | 38A Tc | 26nC @ 4.5V | 26 mΩ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX90N30 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/ixys-ixfx90n30-datasheets-5288.pdf | 300V | 90A | TO-247-3 | Lead Free | 3 | 8 Weeks | 33MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3 | Single | 560W | 1 | FET General Purpose Power | 55ns | 40 ns | 100 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 300V | N-Channel | 10000pF @ 25V | 33m Ω @ 45A, 10V | 4V @ 8mA | 90A Tc | 360nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFX180N07 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfx180n07-datasheets-5254.pdf | 70V | 180A | TO-247-3 | Lead Free | 3 | 8 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 90ns | 55 ns | 140 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 568W Tc | 720A | 0.006Ohm | 70V | N-Channel | 9400pF @ 25V | 6m Ω @ 500mA, 10V | 4V @ 8mA | 180A Tc | 420nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SFP9634 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-sfp9634-datasheets-5256.pdf | TO-220-3 | TO-220-3 | 250V | 70W Tc | P-Channel | 975pF @ 25V | 1.3Ohm @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 37nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK44N60 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixfk44n60-datasheets-5258.pdf | 600V | 44A | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 8 Weeks | 130MOhm | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 40 ns | 50ns | 40 ns | 100 ns | 44A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 600V | N-Channel | 8900pF @ 25V | 130m Ω @ 22A, 10V | 4.5V @ 8mA | 44A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| 2SJ053600L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-2sj0536g0l-datasheets-3133.pdf | -30V | -100mA | SC-70, SOT-323 | Lead Free | SMini3-G1 | 100mA | 30V | 150mW Ta | P-Channel | 75Ohm @ 10mA, 5V | 2V @ 1μA | 100mA Ta | 75 Ω | 5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ34S | Vishay Siliconix | $0.85 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlz34spbf-datasheets-5430.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.54mm | 4.69mm | 8.81mm | 1.437803g | 3 | 1 | Single | D2PAK | 1.6nF | 14 ns | 170ns | 56 ns | 30 ns | 30A | 10V | 60V | 3.7W Ta 88W Tc | 50mOhm | N-Channel | 1600pF @ 25V | 50mOhm @ 18A, 5V | 2V @ 250μA | 30A Tc | 35nC @ 5V | 50 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||
| BSS84W-7 | Diodes Incorporated | $0.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/diodesincorporated-bss84w7f-datasheets-3936.pdf | -50V | -130mA | SC-70, SOT-323 | 2.2mm | 1mm | 1.35mm | Contains Lead | 3 | 6.010099mg | No SVHC | 3 | no | EAR99 | not_compliant | e0 | DUAL | GULL WING | 235 | 3 | 1 | Single | 10 | 200mW | 1 | Other Transistors | Not Qualified | 10 ns | 18 ns | 130mA | 20V | SILICON | SWITCHING | 50V | 200mW Ta | -50V | P-Channel | 45pF @ 25V | 10 Ω @ 100mA, 5V | 2V @ 1mA | 130mA Ta | 5V | ±20V | ||||||||||||||||||||||||||||||||||
| IRL1004STRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3.8W Ta 200W Tc | 130A | 520A | 0.0065Ohm | 700 mJ | N-Channel | 5330pF @ 25V | 6.5m Ω @ 78A, 10V | 1V @ 250μA | 130A Tc | 100nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFH20N80Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/ixys-ixft20n80q-datasheets-7388.pdf | 800V | 20A | TO-247-3 | Lead Free | 3 | 8 Weeks | 6g | No SVHC | 420mOhm | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 27ns | 14 ns | 74 ns | 20A | 20V | 800V | SILICON | DRAIN | 4.5V | 360W Tc | TO-247AD | 250 ns | 80A | 1500 mJ | 800V | N-Channel | 5100pF @ 25V | 4.5 V | 420m Ω @ 10A, 10V | 4.5V @ 4mA | 20A Tc | 200nC @ 10V | 10V | ±20V |
