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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF644NS | Vishay Siliconix | $0.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf644nspbf-datasheets-8681.pdf | 250V | 14A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | D2PAK | 1.06nF | 10 ns | 21ns | 17 ns | 30 ns | 14A | 20V | 250V | 150W Tc | 240mOhm | N-Channel | 1060pF @ 25V | 240mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 54nC @ 10V | 240 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF7450 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | AVALANCHE RATED | 8541.29.00.95 | e0 | TIN LEAD | YES | DUAL | GULL WING | 245 | 30 | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 2.5W Ta | MS-012AA | 2.5A | 20A | 0.17Ohm | 230 mJ | N-Channel | 940pF @ 25V | 170m Ω @ 1.5A, 10V | 5.5V @ 250μA | 2.5A Ta | 39nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF7704 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | -40V | -4.6A | 8-TSSOP (0.173, 4.40mm Width) | Contains Lead | 1.5W | 8-TSSOP | 3.15nF | 4.6A | 40V | 1.5W Ta | -40V | P-Channel | 3150pF @ 25V | 46mOhm @ 4.6A, 10V | 3V @ 250μA | 4.6A Ta | 38nC @ 4.5V | 46 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3714L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | TO-262-3 Long Leads, I2Pak, TO-262AA | 20V | 47W Tc | N-Channel | 670pF @ 10V | 20m Ω @ 18A, 10V | 3V @ 250μA | 36A Tc | 9.7nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU3714 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3714trl-datasheets-4784.pdf | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 20V | 47W Tc | N-Channel | 670pF @ 10V | 20mOhm @ 18A, 10V | 3V @ 250μA | 36A Tc | 9.7nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK122800L | Panasonic Electronic Components | $11.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-2sk122800l-datasheets-5397.pdf | TO-236-3, SC-59, SOT-23-3 | Mini3-G1 | 50V | 150mW Ta | N-Channel | 4.5pF @ 5V | 50Ohm @ 10mA, 2.5V | 1.1V @ 100μA | 50mA Ta | 2.5V | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3715 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 3.8W Ta 71W Tc | TO-252AA | 30A | 200A | 0.011Ohm | 19 mJ | N-Channel | 1060pF @ 10V | 14m Ω @ 26A, 10V | 3V @ 250μA | 54A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF5804 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | SOT-23-6 Thin, TSOT-23-6 | YES | 150°C | Other Transistors | Single | 40V | 2W Ta | 2.5A | P-Channel | 680pF @ 25V | 198m Ω @ 2.5A, 10V | 3V @ 250μA | 2.5A Ta | 21nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44VS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 60V | 115W Tc | N-Channel | 1812pF @ 25V | 16.5m Ω @ 31A, 10V | 4V @ 250μA | 55A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS138W-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | /files/diodesincorporated-bss138w7f-datasheets-3943.pdf | 50V | 200mA | SC-70, SOT-323 | 2.2mm | 1mm | 1.35mm | Contains Lead | 3 | 6.208546mg | No SVHC | 3 | no | EAR99 | not_compliant | e0 | DUAL | GULL WING | 235 | 3 | 1 | Single | 10 | 200mW | 1 | Not Qualified | 20 ns | 20 ns | 200mA | 20V | SILICON | SWITCHING | 200mW Ta | 0.2A | 8 pF | 50V | N-Channel | 50pF @ 10V | 3.5 Ω @ 220mA, 10V | 1.5V @ 250μA | 200mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF5800 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | SOT-23-6 Thin, TSOT-23-6 | 6 | EAR99 | ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2W Ta | MO-193AA | 4A | 32A | 0.085Ohm | 20.6 mJ | P-Channel | 535pF @ 25V | 85m Ω @ 4A, 10V | 1V @ 250μA | 4A Ta | 17nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFP3703 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | TO-247-3 | 3 | EAR99 | AVALANCHE RATED | 8541.29.00.95 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.8W Ta 230W Tc | TO-247AC | 210A | 1000A | 0.0039Ohm | 1700 mJ | N-Channel | 8250pF @ 25V | 2.8m Ω @ 76A, 10V | 4V @ 250μA | 210A Tc | 209nC @ 10V | 7V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU3706 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | e3 | MATTE TIN OVER NICKEL | NO | SINGLE | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 88W Tc | 30A | 280A | 0.009Ohm | 220 mJ | N-Channel | 2410pF @ 10V | 9m Ω @ 15A, 10V | 2V @ 250μA | 75A Tc | 35nC @ 4.5V | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU014N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 55V | 28W Tc | N-Channel | 265pF @ 25V | 140mOhm @ 6A, 10V | 1V @ 250μA | 10A Tc | 7.9nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5803D2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | 8-SOIC (0.154, 3.90mm Width) | EAR99 | YES | Other Transistors | Single | 40V | 2W Ta | 3.4A | P-Channel | 1110pF @ 25V | 112m Ω @ 3.4A, 10V | 3V @ 250μA | 3.4A Ta | 37nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5806 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | SOT-23-6 Thin, TSOT-23-6 | EAR99 | e3 | Matte Tin (Sn) | YES | Other Transistors | Single | 20V | 2W Ta | 4A | P-Channel | 594pF @ 15V | 86m Ω @ 4A, 4.5V | 1.2V @ 250μA | 4A Ta | 11.4nC @ 4.5V | 2.5V 4.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP460P | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 38.000013g | 3 | 280W | 1 | Single | TO-247-3 | 4.2nF | 18 ns | 59ns | 58 ns | 110 ns | 20A | 20V | 500V | 270mOhm | N-Channel | 4200pF @ 25V | 270mOhm @ 12A, 10V | 4V @ 250μA | 20A Tc | 210nC @ 10V | 270 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7807A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7807-datasheets-8327.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 8.3A | 66A | 0.025Ohm | N-Channel | 25m Ω @ 7A, 4.5V | 1V @ 250μA | 8.3A Ta | 17nC @ 5V | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU3715 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | e3 | MATTE TIN OVER NICKEL | NO | SINGLE | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 3.8W Ta 71W Tc | 49A | 200A | 0.011Ohm | 19 mJ | N-Channel | 1060pF @ 10V | 14m Ω @ 26A, 10V | 3V @ 250μA | 54A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5802 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf5802tr-datasheets-5007.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150V | 150V | 2W Ta | 0.9A | 7A | 9.5 mJ | N-Channel | 88pF @ 25V | 1.2 Ω @ 540mA, 10V | 5.5V @ 250μA | 900mA Ta | 6.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| VM0550-2F | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | Bulk | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2000 | 100V | 100A | Module | Lead Free | 590A | 2200W | N-Channel | 50000pF @ 25V | 2.1m Ω @ 500mA, 10V | 590A Tc | 2000nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR120N20 | IXYS | $84.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfr120n20-datasheets-5324.pdf | 200V | 105A | ISOPLUS247™ | Lead Free | 3 | 8 Weeks | 17MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 400W | 1 | FET General Purpose Power | 65ns | 35 ns | 110 ns | 105A | 20V | SILICON | ISOLATED | SWITCHING | 417W Tc | 480A | 200V | N-Channel | 9100pF @ 25V | 17m Ω @ 60A, 10V | 4V @ 8mA | 105A Tc | 360nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFR180N10 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | /files/ixys-ixfr180n10-datasheets-5326.pdf | 100V | 165A | ISOPLUS247™ | Lead Free | 3 | No SVHC | 247 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 400W | 1 | FET General Purpose Power | R-PSIP-T3 | 2.5kV | 90ns | 65 ns | 140 ns | 165A | 20V | 100V | SILICON | ISOLATED | SWITCHING | 400W Tc | 250 ns | 720A | 0.008Ohm | 3000 mJ | 100V | N-Channel | 9400pF @ 25V | 4 V | 8m Ω @ 90A, 10V | 4V @ 8mA | 165A Tc | 400nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| 2SK306400L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-2sk3064g0l-datasheets-5864.pdf | 30V | 1A | SC-70, SOT-323 | Contains Lead | SMini3-G1 | 100mA | 30V | 150mW Ta | N-Channel | 50Ohm @ 10mA, 5V | 2V @ 1μA | 100mA Ta | 50 Ω | 5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL640L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | unknown | 3.1W | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 17A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | TO-220AB | 68A | 0.18Ohm | 580 mJ | N-Channel | 1800pF @ 25V | 180m Ω @ 10A, 5V | 2V @ 250μA | 17A Tc | 66nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3102L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3102-datasheets-0738.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262-3 | 2.5nF | 61A | 20V | 89W Tc | N-Channel | 2500pF @ 15V | 13mOhm @ 37A, 7V | 700mV @ 250μA | 61A Tc | 58nC @ 4.5V | 13 mΩ | 4.5V 7V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL530STRL | Vishay Siliconix | $12.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl530strrpbf-datasheets-7905.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15A | 100V | 3.7W Ta 88W Tc | N-Channel | 930pF @ 25V | 160m Ω @ 9A, 5V | 2V @ 250μA | 15A Tc | 28nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR024NTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlu024n-datasheets-0860.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 45W Tc | TO-252AA | 17A | 72A | 0.08Ohm | 68 mJ | N-Channel | 480pF @ 25V | 65m Ω @ 10A, 10V | 2V @ 250μA | 17A Tc | 15nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF6100 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineon-irf6100-datasheets-2354.pdf | -20V | -5.1A | 4-FlipFet™ | Contains Lead | 4 | 4-FlipFet™ | 1.23nF | 12ns | 5.1A | 20V | 2.2W Ta | P-Channel | 1230pF @ 15V | 65mOhm @ 5.1A, 4.5V | 1.2V @ 250μA | 5.1A Ta | 21nC @ 5V | 65 mΩ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR014NTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | TO-252-3, DPak (2 Leads + Tab), SC-63 | EAR99 | YES | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Single | 55V | 28W Tc | 10A | N-Channel | 265pF @ 25V | 140m Ω @ 6A, 10V | 1V @ 250μA | 10A Tc | 7.9nC @ 5V | 4.5V 10V | ±16V |
