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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF7477 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | 8-SOIC (0.154, 3.90mm Width) | EAR99 | 30V | 2.5W Ta | N-Channel | 2710pF @ 15V | 8.5m Ω @ 14A, 10V | 2.5V @ 250μA | 14A Ta | 38nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3709S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | EAR99 | 30V | 3.1W Ta 120W Tc | N-Channel | 2672pF @ 16V | 9m Ω @ 15A, 10V | 3V @ 250μA | 90A Tc | 41nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3715L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 20V | 3.8W Ta 71W Tc | N-Channel | 1060pF @ 10V | 14mOhm @ 26A, 10V | 3V @ 250μA | 54A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU9014N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-251-3 Short Leads, IPak, TO-251AA | 60V | 2.5W Ta 25W Tc | P-Channel | 270pF @ 25V | 500m Ω @ 3.1A, 10V | 4V @ 250μA | 5.1A Tc | 12nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3711L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | TO-262-3 Long Leads, I2Pak, TO-262AA | NOT SPECIFIED | NOT SPECIFIED | 20V | 3.1W Ta 120W Tc | N-Channel | 2980pF @ 10V | 6m Ω @ 15A, 10V | 3V @ 250μA | 110A Tc | 44nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3443DV | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-si3443dvtr-datasheets-0946.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | EAR99 | ULTRA LOW ON-RESISTANCE | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | 20V | 20V | 2W Ta | MO-193AA | 4.4A | 20A | 0.065Ohm | 31 mJ | P-Channel | 1079pF @ 10V | 65m Ω @ 4.4A, 4.5V | 1.5V @ 250μA | 4.4A Ta | 15nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| IRF3709L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | TO-262-3 Long Leads, I2Pak, TO-262AA | 30V | 3.1W Ta 120W Tc | N-Channel | 2672pF @ 16V | 9m Ω @ 15A, 10V | 3V @ 250μA | 90A Tc | 41nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3708 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | NOT SPECIFIED | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 87W Tc | TO-252AA | 30A | 244A | 0.0125Ohm | 213 mJ | N-Channel | 2417pF @ 15V | 12.5m Ω @ 15A, 10V | 2V @ 250μA | 61A Tc | 24nC @ 4.5V | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| IRFZ44R | Vishay Siliconix | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz44rpbf-datasheets-9586.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 3 | No | 1 | Single | TO-220AB | 1.9nF | 14 ns | 110ns | 92 ns | 45 ns | 50A | 20V | 60V | 150W Tc | 28mOhm | N-Channel | 1900pF @ 25V | 28mOhm @ 31A, 10V | 4V @ 250μA | 50A Tc | 67nC @ 10V | 28 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| ZXM66P03N8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxm66p03n8ta-datasheets-5181.pdf | -30V | -7.9A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 10 Weeks | 73.992255mg | No SVHC | 25mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | 40 | 2.5W | 1 | 7.6 ns | 16.3ns | 39.6 ns | 94.6 ns | 7.9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 1.56W Ta | 6.25A | -30V | P-Channel | 1979pF @ 25V | 25m Ω @ 5.6A, 10V | 1V @ 250μA | 6.25A Ta | 36nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| IRF7701 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7701-datasheets-5556.pdf | 8-TSSOP (0.173, 4.40mm Width) | YES | Other Transistors | Single | 12V | 1.5W Ta | 10A | P-Channel | 5050pF @ 10V | 11m Ω @ 10A, 4.5V | 1.2V @ 250μA | 10A Tc | 100nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFM460 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2015 | TO-254-3, TO-254AA (Straight Leads) | 3 | EAR99 | HIGH RELIABILITY | NO | SINGLE | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | S-MSFM-P3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 250W Tc | 19A | 76A | 0.31Ohm | 1200 mJ | N-Channel | 4300pF @ 25V | 270m Ω @ 12A, 10V | 4V @ 250μA | 19A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRL3715S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 20V | 3.8W Ta 71W Tc | N-Channel | 1060pF @ 10V | 14mOhm @ 26A, 10V | 3V @ 250μA | 54A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7705 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | 8-TSSOP (0.173, 4.40mm Width) | 8 | EAR99 | HIGH RELIABILITY | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.5W Tc | MO-153AA | 8A | 30A | 0.018Ohm | P-Channel | 2774pF @ 25V | 18m Ω @ 8A, 10V | 2.5V @ 250μA | 8A Tc | 88nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF7809AV | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7809av-datasheets-5574.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | 245 | 30 | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 13.3A | 100A | 0.009Ohm | N-Channel | 3780pF @ 16V | 9m Ω @ 15A, 4.5V | 1V @ 250μA | 13.3A Ta | 62nC @ 5V | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| IRF7703 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | -40V | -6A | 8-TSSOP (0.173, 4.40mm Width) | Contains Lead | 8 | 8 | EAR99 | HIGH RELIABILITY | e3 | MATTE TIN | DUAL | GULL WING | 260 | 30 | 1.5W | 1 | Other Transistors | Not Qualified | 6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 1.5W Ta | 6A | 24A | P-Channel | 5220pF @ 25V | 28m Ω @ 6A, 10V | 3V @ 250μA | 6A Ta | 62nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF7433 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 12V | 2.5W Ta | P-Channel | 1877pF @ 10V | 24mOhm @ 8.7A, 4.5V | 900mV @ 250μA | 8.9A Ta | 20nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH80N20Q | IXYS | $2.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh80n20q-datasheets-5589.pdf | 200V | 80A | TO-247-3 | Lead Free | 3 | 8 Weeks | 28MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 360W | 1 | FET General Purpose Power | 50ns | 20 ns | 75 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 200V | N-Channel | 4600pF @ 25V | 28m Ω @ 500mA, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRF7420 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | 8-SOIC (0.154, 3.90mm Width) | 8 | NOT SPECIFIED | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | 2.5W Ta | MS-012AA | 11.5A | 46A | 0.014Ohm | P-Channel | 3529pF @ 10V | 14m Ω @ 11.5A, 4.5V | 900mV @ 250μA | 11.5A Tc | 38nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF7425 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | ULTRA LOW RESISTANCE | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | 245 | 30 | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2.5W Ta | MS-012AA | 15A | 60A | 0.0082Ohm | P-Channel | 7980pF @ 15V | 8.2m Ω @ 15A, 4.5V | 1.2V @ 250μA | 15A Ta | 130nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| IRF644NS | Vishay Siliconix | $0.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf644nspbf-datasheets-8681.pdf | 250V | 14A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | D2PAK | 1.06nF | 10 ns | 21ns | 17 ns | 30 ns | 14A | 20V | 250V | 150W Tc | 240mOhm | N-Channel | 1060pF @ 25V | 240mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 54nC @ 10V | 240 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF7450 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | AVALANCHE RATED | 8541.29.00.95 | e0 | TIN LEAD | YES | DUAL | GULL WING | 245 | 30 | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 2.5W Ta | MS-012AA | 2.5A | 20A | 0.17Ohm | 230 mJ | N-Channel | 940pF @ 25V | 170m Ω @ 1.5A, 10V | 5.5V @ 250μA | 2.5A Ta | 39nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRF7704 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | -40V | -4.6A | 8-TSSOP (0.173, 4.40mm Width) | Contains Lead | 1.5W | 8-TSSOP | 3.15nF | 4.6A | 40V | 1.5W Ta | -40V | P-Channel | 3150pF @ 25V | 46mOhm @ 4.6A, 10V | 3V @ 250μA | 4.6A Ta | 38nC @ 4.5V | 46 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3714L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | TO-262-3 Long Leads, I2Pak, TO-262AA | 20V | 47W Tc | N-Channel | 670pF @ 10V | 20m Ω @ 18A, 10V | 3V @ 250μA | 36A Tc | 9.7nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3708L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | TO-262-3 Long Leads, I2Pak, TO-262AA | NOT SPECIFIED | NOT SPECIFIED | 30V | 87W Tc | N-Channel | 2417pF @ 15V | 12m Ω @ 15A, 10V | 2V @ 250μA | 62A Tc | 24nC @ 4.5V | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3715 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | TO-220-3 | TO-220AB | 20V | 3.8W Ta 71W Tc | N-Channel | 1060pF @ 10V | 14mOhm @ 26A, 10V | 3V @ 250μA | 54A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7521D1TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1999 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | Micro8™ | 20V | 1.3W Ta | N-Channel | 260pF @ 15V | 135mOhm @ 1.7A, 4.5V | 700mV @ 250μA | 2.4A Ta | 8nC @ 4.5V | Schottky Diode (Isolated) | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR220NTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfu220n-datasheets-5159.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 43W Tc | TO-252AA | 5A | 20A | 0.6Ohm | 46 mJ | N-Channel | 300pF @ 25V | 600m Ω @ 2.9A, 10V | 4V @ 250μA | 5A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRLR8503TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 30V | 62W Tc | N-Channel | 1650pF @ 25V | 16mOhm @ 15A, 10V | 3V @ 250μA | 44A Tc | 20nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP32N50K | Vishay Siliconix | $0.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp32n50k-datasheets-5497.pdf | 500V | 32A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Contains Lead | 38.000013g | No | 1 | Single | TO-247-3 | 5.28nF | 28 ns | 120ns | 54 ns | 48 ns | 32A | 30V | 500V | 460W Tc | 160mOhm | 500V | N-Channel | 5280pF @ 25V | 160mOhm @ 32A, 10V | 5V @ 250μA | 32A Tc | 190nC @ 10V | 160 mΩ | 10V | ±30V |
