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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFBE30L | Vishay Siliconix | $1.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbe30lpbf-datasheets-7866.pdf | 800V | 4.1A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | Contains Lead | 2.387001g | 1 | Single | I2PAK | 1.3nF | 12 ns | 33ns | 30 ns | 82 ns | 4.1A | 20V | 800V | 125W Tc | 3Ohm | 800V | N-Channel | 1300pF @ 25V | 3Ohm @ 2.5A, 10V | 4V @ 250μA | 4.1A Tc | 78nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFBE20S | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 54W | D2PAK | 530pF | 1.8A | 800V | N-Channel | 530pF @ 25V | 6.5Ohm @ 1.1A, 10V | 4V @ 250μA | 1.8A Tc | 38nC @ 10V | 6.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP05CN10L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp05cn10lg-datasheets-4365.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 300W Tc | TO-220AB | 100A | 400A | 0.0051Ohm | 826 mJ | N-Channel | 15600pF @ 50V | 5.1m Ω @ 100A, 10V | 2.4V @ 250μA | 100A Tc | 163nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BSS138W L6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss138we6327-datasheets-2396.pdf | SC-70, SOT-323 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | 8541.21.00.95 | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 500mW Ta | 0.28A | 4.2 pF | N-Channel | 43pF @ 25V | 3.5 Ω @ 220mA, 10V | 1.4V @ 26μA | 280mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPI90R800C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipi90r800c3xksa1-datasheets-4374.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 6 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 70 ns | 20ns | 32 ns | 400 ns | 6.9A | 20V | 900V | SILICON | SINGLE WITH BUILT-IN DIODE | 104W Tc | 15A | 0.8Ohm | 157 mJ | N-Channel | 1100pF @ 100V | 800m Ω @ 4.1A, 10V | 3.5V @ 460μA | 6.9A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFBE20STRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbe20pbf-datasheets-1770.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 54W | 1.8A | 800V | N-Channel | 530pF @ 25V | 6.5 Ω @ 1.1A, 10V | 4V @ 250μA | 1.8A Tc | 38nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS127L6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss127l6327htsa1-datasheets-4381.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.21.00.95 | DUAL | GULL WING | 1 | 21mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 500mW Ta | 0.021A | 600Ohm | 1.5 pF | N-Channel | 28pF @ 25V | 500 Ω @ 16mA, 10V | 2.6V @ 8μA | 21mA Ta | 1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI50CN10NGHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb50cn10ngatma1-datasheets-4070.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | compliant | NO | SINGLE | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 44W Tc | 20A | 80A | 0.05Ohm | 29 mJ | N-Channel | 1090pF @ 50V | 50m Ω @ 20A, 10V | 4V @ 20μA | 20A Tc | 16nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI80N04S304AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n04s304atma1-datasheets-4329.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | ULTRA LOW RESISTANCE | compliant | 8541.29.00.95 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 136W Tc | 80A | 320A | 0.0042Ohm | 290 mJ | N-Channel | 5200pF @ 25V | 4.1m Ω @ 80A, 10V | 4V @ 90μA | 80A Tc | 80nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPI60R520CPAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi60r520cpaksa1-datasheets-4335.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 3 | no | EAR99 | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 3 | 1 | 17 ns | 12ns | 16 ns | 74 ns | 6.8A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 66W Tc | 17A | 0.52Ohm | 166 mJ | N-Channel | 630pF @ 100V | 520m Ω @ 3.8A, 10V | 3.5V @ 340μA | 6.8A Tc | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPI80N06S207AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipb80n06s207atma1-datasheets-3976.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | EAR99 | 55V | 250W Tc | N-Channel | 3400pF @ 25V | 6.6m Ω @ 68A, 10V | 4V @ 180μA | 80A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB80N06S2L06ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s2l06atma1-datasheets-4279.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 55V | 55V | 250W Tc | 80A | 320A | 0.0084Ohm | 530 mJ | N-Channel | 3800pF @ 25V | 6m Ω @ 69A, 10V | 2V @ 180μA | 80A Tc | 150nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI100N04S303AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb100n04s303atma1-datasheets-7086.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | ULTRA LOW RESISTANCE | compliant | 8541.29.00.95 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 214W Tc | 100A | 400A | 0.0028Ohm | 898 mJ | N-Channel | 9600pF @ 25V | 2.8m Ω @ 80A, 10V | 4V @ 150μA | 100A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPB77N06S212ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb77n06s212atma1-datasheets-4287.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 55V | 55V | 158W Tc | 77A | 308A | 0.0117Ohm | 280 mJ | N-Channel | 1770pF @ 25V | 11.7m Ω @ 38A, 10V | 4V @ 93μA | 77A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI50R350CP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/infineontechnologies-ipi50r350cpxksa1-datasheets-8161.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 26 Weeks | No SVHC | 3 | yes | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 89W | 1 | Not Qualified | 35 ns | 14ns | 12 ns | 80 ns | 10A | 20V | 500V | 550V | SILICON | SWITCHING | 3V | 89W Tc | 22A | 246 mJ | 500V | N-Channel | 1020pF @ 100V | 3 V | 350m Ω @ 5.6A, 10V | 3.5V @ 370μA | 10A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPI60R250CPAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi60r250cpaksa1-datasheets-4296.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.36mm | 9.45mm | 4.52mm | 3 | 2.084002g | 3 | no | NOT SPECIFIED | 3 | 1 | Single | NOT SPECIFIED | 1 | Not Qualified | 40 ns | 17ns | 12 ns | 110 ns | 12A | 20V | SILICON | SWITCHING | 104W Tc | 40A | 0.25Ohm | 650V | N-Channel | 1200pF @ 100V | 250m Ω @ 7.8A, 10V | 3.5V @ 440μA | 12A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPI80N04S306AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n04s306atma1-datasheets-1223.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | ULTRA LOW RESISTANCE | compliant | 8541.29.00.95 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 100W Tc | 80A | 320A | 0.0057Ohm | 125 mJ | N-Channel | 3250pF @ 25V | 5.7m Ω @ 80A, 10V | 4V @ 52μA | 80A Tc | 47nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSS119L6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss119l6433htma1-datasheets-4620.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | 8541.21.00.95 | e3 | MATTE TIN | DUAL | GULL WING | 260 | 3 | 40 | 1 | Not Qualified | 170mA | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 360mW Ta | 0.17A | 6Ohm | 4.1 pF | N-Channel | 78pF @ 25V | 6 Ω @ 170mA, 10V | 2.3V @ 50μA | 170mA Ta | 2.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPI50R140CP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | /files/infineontechnologies-ipi50r140cp-datasheets-4307.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | No SVHC | 3 | No | Halogen Free | Single | 192W | 35 ns | 14ns | 8 ns | 80 ns | 23A | 20V | 500V | 550V | 192W Tc | 500V | N-Channel | 2540pF @ 100V | 3 V | 140m Ω @ 14A, 10V | 3.5V @ 930μA | 23A Tc | 64nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI139N08N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi139n08n3ghksa1-datasheets-4312.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | compliant | NO | SINGLE | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 80V | 80V | 79W Tc | 45A | 180A | 0.0139Ohm | 50 mJ | N-Channel | 1730pF @ 40V | 13.9m Ω @ 45A, 10V | 3.5V @ 33μA | 45A Tc | 25nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI60R600CPAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi60r600cpaksa1-datasheets-4317.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | no | EAR99 | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 60W Tc | 6.1A | 15A | 0.6Ohm | 144 mJ | N-Channel | 550pF @ 100V | 600m Ω @ 3.3A, 10V | 3.5V @ 220μA | 6.1A Tc | 27nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPI70N04S307AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/infineontechnologies-ipi70n04s307aksa1-datasheets-4322.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 3 | EAR99 | ULTRA LOW RESISTANCE | 8541.29.00.95 | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 80A | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 79W Tc | 70A | 0.0071Ohm | 145 mJ | N-Channel | 2700pF @ 25V | 6.5m Ω @ 70A, 10V | 4V @ 50μA | 80A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SFU9220TU_AM002 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 1997 | https://pdf.utmel.com/r/datasheets/onsemiconductor-sfu9220tuf080-datasheets-3612.pdf | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 200V | 2.5W Ta 30W Tc | P-Channel | 540pF @ 25V | 1.5Ohm @ 1.6A, 10V | 4V @ 250μA | 3.1A Tc | 19nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3388(TE24L,Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sk3388te24lq-datasheets-4265.pdf | SC-97 | FET General Purpose Power | 20A | Single | 250V | 125W Tc | N-Channel | 4000pF @ 10V | 105m Ω @ 10A, 10V | 3.5V @ 1mA | 20A Ta | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI12CN10N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp12cn10ng-datasheets-1275.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | FAST SWITCHING | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 125W Tc | 67A | 268A | 0.0129Ohm | 154 mJ | N-Channel | 4320pF @ 50V | 12.9m Ω @ 67A, 10V | 4V @ 83μA | 67A Tc | 65nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPI08CNE8N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp08cne8ng-datasheets-1165.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 85V | 85V | 167W Tc | 95A | 380A | 262 mJ | N-Channel | 6690pF @ 40V | 6.4m Ω @ 95A, 10V | 4V @ 130μA | 95A Tc | 99nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPI12CNE8N G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp12cne8ng-datasheets-1234.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | EAR99 | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 85V | 85V | 125W Tc | 67A | 268A | 0.0126Ohm | 154 mJ | N-Channel | 4340pF @ 40V | 12.6m Ω @ 67A, 10V | 4V @ 83μA | 67A Tc | 64nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPI030N10N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp030n10n3gxksa1-datasheets-1496.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 18 Weeks | 3 | No | PG-TO262-3 | 14.8nF | 34 ns | 58ns | 28 ns | 84 ns | 100A | 20V | 100V | 300W Tc | N-Channel | 14800pF @ 50V | 3mOhm @ 100A, 10V | 3.5V @ 275μA | 100A Tc | 206nC @ 10V | 3 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI037N08N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb035n08n3gatma1-datasheets-8879.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | PG-TO262-3 | 80V | 214W Tc | N-Channel | 8110pF @ 40V | 3.75mOhm @ 100A, 10V | 3.5V @ 155μA | 100A Tc | 117nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD135N08N3GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd135n08n3gatma1-datasheets-4635.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 79W Tc | TO-252AA | 45A | 180A | 0.0135Ohm | 50 mJ | N-Channel | 1730pF @ 40V | 13.5m Ω @ 45A, 10V | 3.5V @ 33μA | 45A Tc | 25nC @ 10V | 6V 10V | ±20V |
