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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFU9024N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfu9024n-datasheets-1219.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | HIGH RELIABILITY | e0 | Tin/Lead (Sn/Pb) | NO | SINGLE | 245 | 30 | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 38W Tc | 11A | 44A | 0.175Ohm | 62 mJ | P-Channel | 350pF @ 25V | 175m Ω @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 19nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF1503LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf1503spbf-datasheets-0380.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 30V | 200W Tc | N-Channel | 5730pF @ 25V | 3.3mOhm @ 140A, 10V | 4V @ 250μA | 75A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR8503 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 30V | 62W Tc | N-Channel | 1650pF @ 25V | 16mOhm @ 15A, 10V | 3V @ 250μA | 44A Tc | 20nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU1205 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr1205-datasheets-7758.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | e0 | Tin/Lead (Sn/Pb) | NO | SINGLE | 245 | 30 | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 107W Tc | 20A | 160A | 0.027Ohm | 210 mJ | N-Channel | 1300pF @ 25V | 27m Ω @ 26A, 10V | 4V @ 250μA | 44A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFS9N60A | Vishay Siliconix | $0.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfs9n60apbf-datasheets-3643.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 750mOhm | 3 | 1 | Single | 170W | 1 | D2PAK | 1.4nF | 13 ns | 25ns | 22 ns | 30 ns | 9.2A | 30V | 600V | 170W Tc | 750mOhm | N-Channel | 1400pF @ 25V | 750mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 49nC @ 10V | 750 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IRF2805SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2002 | /files/infineontechnologies-irf2805strlpbf-datasheets-1477.pdf | 55V | 135A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.652mm | Lead Free | No SVHC | 4.7mOhm | 3 | EAR99 | No | Single | 200W | 1 | 14 ns | 120ns | 110 ns | 68 ns | 135A | 20V | 55V | 4V | 200W Tc | 55V | N-Channel | 5110pF @ 25V | 4 V | 4.7m Ω @ 104A, 10V | 4V @ 250μA | 135A Tc | 230nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRL2703S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1996 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 45W Tc | 24A | 96A | 0.04Ohm | 77 mJ | N-Channel | 450pF @ 25V | 40m Ω @ 14A, 10V | 1V @ 250μA | 24A Tc | 15nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFS17N20D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | unknown | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 3.8W Ta 140W Tc | 16A | 64A | 0.17Ohm | 240 mJ | N-Channel | 1100pF @ 25V | 170m Ω @ 9.8A, 10V | 5.5V @ 250μA | 16A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU13N15D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfu13n15d-datasheets-1189.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 150V | 86W Tc | N-Channel | 620pF @ 25V | 180m Ω @ 8.3A, 10V | 5.5V @ 250μA | 14A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU224 | Vishay Siliconix | $0.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu224pbf-datasheets-5033.pdf | 250V | 3.8A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Contains Lead | 329.988449mg | 3 | 1 | Single | 42W | TO-251AA | 260pF | 7 ns | 13ns | 12 ns | 20 ns | 3.8A | 20V | 250V | 2.5W Ta 42W Tc | 1.1Ohm | 250V | N-Channel | 260pF @ 25V | 1.1Ohm @ 2.3A, 10V | 4V @ 250μA | 3.8A Tc | 14nC @ 10V | 1.1 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRL1104S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 2.4W Ta 167W Tc | 104A | 416A | 0.008Ohm | 340 mJ | N-Channel | 3445pF @ 25V | 8m Ω @ 62A, 10V | 1V @ 250μA | 104A Tc | 68nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFUC20 | Vishay Siliconix | $0.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfrc20trpbf-datasheets-2433.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | 3 | 329.988449mg | 3 | no | AVALANCHE RATED | No | e0 | TIN LEAD | 240 | 3 | 1 | Single | 30 | 1 | 10 ns | 23ns | 25 ns | 30 ns | 2A | 20V | SILICON | DRAIN | SWITCHING | 600V | 600V | 2.5W Ta 42W Tc | 2A | 8A | 74 mJ | N-Channel | 350pF @ 25V | 4.4 Ω @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| 94-2335 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-942335-datasheets-1202.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 55V | 68W Tc | N-Channel | 880pF @ 25V | 40m Ω @ 17A, 10V | 2V @ 250μA | 28A Tc | 25nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU9310 | Vishay Siliconix | $0.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9310pbf-datasheets-8583.pdf | -400V | -1.8A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Contains Lead | 329.988449mg | 3 | 1 | Single | TO-251AA | 270pF | 11 ns | 10ns | 24 ns | 25 ns | 1.8A | 20V | 400V | 50W Tc | 7Ohm | P-Channel | 270pF @ 25V | 7Ohm @ 1.1A, 10V | 4V @ 250μA | 1.8A Tc | 13nC @ 10V | 7 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRL3402S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3402spbf-datasheets-9934.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20V | 110W Tc | N-Channel | 3300pF @ 15V | 8m Ω @ 51A, 7V | 700mV @ 250μA | 85A Tc | 78nC @ 4.5V | 4.5V 7V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU9N20D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | TO-251-3 Short Leads, IPak, TO-251AA | 200V | 86W Tc | N-Channel | 560pF @ 25V | 380m Ω @ 5.6A, 10V | 5.5V @ 250μA | 9.4A Tc | 27nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR18N15D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr18n15d-datasheets-1137.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 245 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 110W Tc | TO-252AA | 18A | 72A | 0.125Ohm | 200 mJ | N-Channel | 900pF @ 25V | 125m Ω @ 11A, 10V | 5.5V @ 250μA | 18A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IRLMS6802TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | SOT-23-6 | 6 | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 5.6A | 45A | 0.05Ohm | 31 mJ | P-Channel | 1079pF @ 10V | 50m Ω @ 5.1A, 4.5V | 1.2V @ 250μA | 5.6A Ta | 16nC @ 5V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3707S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | EAR99 | 30V | 87W Tc | N-Channel | 1990pF @ 15V | 12.5m Ω @ 15A, 10V | 3V @ 250μA | 62A Tc | 19nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC20S | Vishay Siliconix | $1.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbc20strlpbf-datasheets-2593.pdf | 600V | 2.2A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | D2PAK | 350pF | 10 ns | 23ns | 25 ns | 30 ns | 2.2A | 20V | 600V | 3.1W Ta 50W Tc | 4.4Ohm | N-Channel | 350pF @ 25V | 4.4Ohm @ 1.3A, 10V | 4V @ 250μA | 2.2A Tc | 18nC @ 10V | 4.4 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRLML6402TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlml6402tr-datasheets-1066.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 150°C | 30 | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.3W | 20V | 20V | TO-236AB | 3.7A | 22A | 0.065Ohm | 11 mJ | P-Channel | 633pF @ 10V | 65m Ω @ 3.7A, 4.5V | 1.2V @ 250μA | 3.7A Ta | 12nC @ 5V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF7524D1TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1999 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | EAR99 | YES | NOT SPECIFIED | NOT SPECIFIED | Other Transistors | Single | 20V | 1.25W Ta | 1.7A | P-Channel | 240pF @ 15V | 270m Ω @ 1.2A, 4.5V | 700mV @ 250μA | 1.7A Ta | 8.2nC @ 4.5V | Schottky Diode (Isolated) | 2.7V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF820AS | Vishay Siliconix | $0.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf820alpbf-datasheets-4820.pdf | 500V | 2.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 3 | D2PAK | 340pF | 12ns | 2.5A | 500V | 50W Tc | N-Channel | 340pF @ 25V | 3Ohm @ 1.5A, 10V | 4.5V @ 250μA | 2.5A Tc | 17nC @ 10V | 3 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 94-2110 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 40V | 3.8W Ta 200W Tc | N-Channel | 7360pF @ 25V | 4mOhm @ 95A, 10V | 4V @ 250μA | 162A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ34NSTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 55V | 3.8W Ta 68W Tc | N-Channel | 880pF @ 25V | 35m Ω @ 16A, 10V | 2V @ 250μA | 30A Tc | 25nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44NL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | AVALANCHE RATED, HIGH RELIABILITY | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 94W Tc | 49A | 160A | 0.0175Ohm | 150 mJ | N-Channel | 1470pF @ 25V | 17.5m Ω @ 25A, 10V | 4V @ 250μA | 49A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL1004S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3.8W Ta 200W Tc | 130A | 520A | 0.0065Ohm | 700 mJ | N-Channel | 5330pF @ 25V | 6.5m Ω @ 78A, 10V | 1V @ 250μA | 130A Tc | 100nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| IRLML6302TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlml6302tr-datasheets-1108.pdf | -20V | -620mA | TO-236-3, SC-59, SOT-23-3 | Contains Lead | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | 540mW | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 540mW | 1 | Other Transistors | Not Qualified | 22ns | 780mA | 12V | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 0.78A | 0.6Ohm | P-Channel | 97pF @ 15V | 600m Ω @ 610mA, 4.5V | 1.5V @ 250μA | 780mA Ta | 3.6nC @ 4.45V | ||||||||||||||||||||||||||||||||||||||||||
| IRFS33N15D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 3.8W Ta 170W Tc | 33A | 130A | 0.056Ohm | 330 mJ | N-Channel | 2020pF @ 25V | 56m Ω @ 20A, 10V | 5.5V @ 250μA | 33A Tc | 90nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF3706S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20V | 88W Tc | N-Channel | 2410pF @ 10V | 8.5m Ω @ 15A, 10V | 2V @ 250μA | 77A Tc | 35nC @ 4.5V | 2.8V 10V | ±12V |
