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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | REACH SVHC | Resistance | Number of Pins | ECCN Code | Additional Feature | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF3706 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | TO-220-3 | 20V | 88W Tc | N-Channel | 2410pF @ 10V | 8.5m Ω @ 15A, 10V | 2V @ 250μA | 77A Tc | 35nC @ 4.5V | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44STRR | Vishay Siliconix | $1.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz44spbf-datasheets-3540.pdf | 60V | 50A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | D2PAK | 1.9nF | 14 ns | 110ns | 92 ns | 45 ns | 50A | 20V | 60V | 3.7W Ta 150W Tc | 28mOhm | N-Channel | 1900pF @ 25V | 28mOhm @ 31A, 10V | 4V @ 250μA | 50A Tc | 67nC @ 10V | 28 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FA38SA50LC | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-fa38sa50lc-datasheets-1313.pdf | 500V | 38A | SOT-227-4, miniBLOC | Contains Lead | 4 | SOT-227 | 6.9nF | 340ns | 38A | 500V | 500W Tc | N-Channel | 6900pF @ 25V | 130mOhm @ 23A, 10V | 4V @ 250μA | 38A Tc | 420nC @ 10V | 130 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLI2505 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-220-3 Full Pack | EAR99 | AVALANCHE RATED, FAST SWITCHING | AEC-Q101 | NO | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 55V | 55V | 63W Tc | 58A | 360A | 0.01Ohm | 500 mJ | N-Channel | 5000pF @ 25V | 8m Ω @ 31A, 10V | 2V @ 250μA | 58A Tc | 130nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFBA1404P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | TO-273AA | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 300W Tc | 95A | 650A | 0.0037Ohm | N-Channel | 7360pF @ 25V | 3.7m Ω @ 95A, 10V | 4V @ 250μA | 206A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFL024N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | TO-261-4, TO-261AA | 4 | EAR99 | AVALANCHE RATED | e0 | TIN LEAD | YES | DUAL | GULL WING | 245 | 30 | 1 | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1W Ta | 2.8A | 0.075Ohm | N-Channel | 400pF @ 25V | 75m Ω @ 2.8A, 10V | 4V @ 250μA | 2.8A Ta | 18.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRL3402 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3402pbf-datasheets-8996.pdf | TO-220-3 | 3 | EAR99 | FAST SWITCHING, LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 110W Tc | TO-220AB | 85A | 340A | 0.01Ohm | 290 mJ | N-Channel | 3300pF @ 15V | 8m Ω @ 51A, 7V | 700mV @ 250μA | 85A Tc | 78nC @ 4.5V | 4.5V 7V | ±10V | |||||||||||||||||||||||||||||||||||||||
| IRLIZ34G | Vishay Siliconix | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irliz34gpbf-datasheets-3432.pdf | 60V | 20A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | TO-220-3 | 1.6nF | 14 ns | 170ns | 56 ns | 30 ns | 20A | 10V | 60V | 42W Tc | 50mOhm | N-Channel | 1600pF @ 25V | 50mOhm @ 12A, 5V | 2V @ 250μA | 20A Tc | 35nC @ 5V | 50 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||
| IRFL1006 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineon-irfl1006-datasheets-0907.pdf | 60V | 1.6A | TO-261-4, TO-261AA | Contains Lead | SOT-223 | 160pF | 18ns | 1.6A | 60V | 1W Ta | N-Channel | 160pF @ 25V | 220mOhm @ 1.6A, 10V | 4V @ 250μA | 1.6A Ta | 8nC @ 10V | 220 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBL3703 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | Super D2-Pak | 2 | EAR99 | AVALANCHE RATED | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | FLAT | 260 | 30 | 1 | Not Qualified | R-PSSO-F2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.8W Ta 300W Tc | 260A | 1000A | 0.0036Ohm | 1700 mJ | N-Channel | 8250pF @ 25V | 2.5m Ω @ 76A, 10V | 4V @ 250μA | 260A Tc | 209nC @ 10V | 7V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFP350LC | Vishay Siliconix | $3.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp350lc-datasheets-1344.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 38.000013g | Unknown | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.2nF | 14 ns | 54ns | 35 ns | 33 ns | 16A | 30V | 400V | 4V | 190W Tc | 300mOhm | 400V | N-Channel | 2200pF @ 25V | 4 V | 300mOhm @ 9.6A, 10V | 4V @ 250μA | 16A Tc | 76nC @ 10V | 300 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IRFU110 | Vishay Siliconix | $0.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu110pbf-datasheets-7868.pdf | 100V | 4.7A | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | 3 | Single | TO-251AA | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 4.3A | 20V | 100V | 25W Tc | 540mOhm | N-Channel | 180pF @ 25V | 540mOhm @ 900mA, 10V | 4V @ 250μA | 4.3A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF7467 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 30V | 2.5W Ta | N-Channel | 2530pF @ 15V | 12mOhm @ 11A, 10V | 2V @ 250μA | 11A Ta | 32nC @ 4.5V | 2.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FA57SA50LC | Vishay Semiconductor Diodes Division | $4.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 500V | 57A | SOT-227-4, miniBLOC | Contains Lead | 4 | 625W | SOT-227 | 10nF | 152ns | 57A | 500V | 625W Tc | N-Channel | 10000pF @ 25V | 80mOhm @ 34A, 10V | 4V @ 250μA | 57A Tc | 338nC @ 10V | 80 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU2705 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-942335-datasheets-1202.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 55V | 68W Tc | N-Channel | 880pF @ 25V | 40m Ω @ 17A, 10V | 2V @ 250μA | 28A Tc | 25nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU214 | Vishay Siliconix | $29.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu214pbf-datasheets-4957.pdf | 250V | 2.2A | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | Unknown | 2Ohm | 3 | Single | 25W | TO-251AA | 140pF | 7 ns | 7.6ns | 7 ns | 16 ns | 2.2A | 20V | 250V | 2.5W Ta 25W Tc | 2Ohm | 250V | N-Channel | 140pF @ 25V | 4 V | 2Ohm @ 1.3A, 10V | 4V @ 250μA | 2.2A Tc | 8.2nC @ 10V | 2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFU4105 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 68W Tc | 30A | 120A | 0.0245Ohm | 29 mJ | N-Channel | 700pF @ 25V | 45m Ω @ 16A, 10V | 4V @ 250μA | 27A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFR310TR | Vishay Siliconix | $0.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr310trpbf-datasheets-0789.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 1.437803g | 1 | Single | D-Pak | 170pF | 7.9 ns | 9.9ns | 11 ns | 21 ns | 1.7A | 20V | 400V | 2.5W Ta 25W Tc | 3.6Ohm | N-Channel | 170pF @ 25V | 3.6Ohm @ 1A, 10V | 4V @ 250μA | 1.7A Tc | 12nC @ 10V | 3.6 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF7521D1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineon-irf7521d1-datasheets-0890.pdf | 20V | 2.4A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | Contains Lead | Micro8™ | 260pF | 2.4A | 20V | 1.3W Ta | N-Channel | 260pF @ 15V | 135mOhm @ 1.7A, 4.5V | 700mV @ 250μA | 2.4A Ta | 8nC @ 4.5V | Schottky Diode (Isolated) | 135 mΩ | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU014 | Vishay Siliconix | $0.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr014trlpbf-datasheets-8479.pdf | 60V | 7.7A | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | Unknown | 3 | Single | TO-251AA | 300pF | 10 ns | 50ns | 19 ns | 13 ns | 7.7A | 20V | 60V | 2.5W Ta 25W Tc | 200mOhm | 60V | N-Channel | 300pF @ 25V | 4 V | 200mOhm @ 4.6A, 10V | 4V @ 250μA | 7.7A Tc | 11nC @ 10V | 200 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF7459 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | 20V | 12A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 2.5W | 8-SO | 2.48nF | 4.5ns | 12A | 20V | 2.5W Ta | 20V | N-Channel | 2480pF @ 10V | 9mOhm @ 12A, 10V | 2V @ 250μA | 12A Ta | 35nC @ 4.5V | 9 mΩ | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7466 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 30V | 2.5W Ta | N-Channel | 2100pF @ 15V | 12.5mOhm @ 11A, 10V | 3V @ 250μA | 11A Ta | 23nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7468 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | 8-SOIC (0.154, 3.90mm Width) | 8 | AVALANCHE RATED | NOT SPECIFIED | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 2.5W Ta | MS-012AA | 9.4A | 75A | 0.0155Ohm | 160 mJ | N-Channel | 2460pF @ 20V | 15.5m Ω @ 9.4A, 10V | 2V @ 250μA | 9.4A Ta | 34nC @ 4.5V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| IRF7457 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | ULTRA-LOW RESISTANCE | 8541.29.00.95 | e0 | TIN LEAD | YES | DUAL | GULL WING | 245 | 30 | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2.5W Ta | MS-012AA | 15A | 120A | 0.007Ohm | 265 mJ | N-Channel | 3100pF @ 10V | 7m Ω @ 15A, 10V | 3V @ 250μA | 15A Ta | 42nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF7452 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | 245 | 30 | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 2.5W Ta | MS-012AA | 4.5A | 36A | 0.06Ohm | 200 mJ | N-Channel | 930pF @ 25V | 60m Ω @ 2.7A, 10V | 5.5V @ 250μA | 4.5A Ta | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRF7464 | Infineon Technologies | $0.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 200V | 2.5W Ta | N-Channel | 280pF @ 25V | 730mOhm @ 720mA, 10V | 5.5V @ 250μA | 1.2A Ta | 14nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLMS2002 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | SOT-23-6 | 6 | EAR99 | ULTRA-LOW RESISTANCE | YES | DUAL | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2W Ta | 6.5A | 20A | 0.03Ohm | N-Channel | 1310pF @ 15V | 30m Ω @ 6.5A, 4.5V | 1.2V @ 250μA | 6.5A Ta | 22nC @ 5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| IRF7460 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 20V | 2.5W Ta | N-Channel | 2050pF @ 10V | 10mOhm @ 12A, 10V | 3V @ 250μA | 12A Ta | 19nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU9024N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfu9024n-datasheets-1219.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | HIGH RELIABILITY | e0 | Tin/Lead (Sn/Pb) | NO | SINGLE | 245 | 30 | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 38W Tc | 11A | 44A | 0.175Ohm | 62 mJ | P-Channel | 350pF @ 25V | 175m Ω @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFU3910 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3910trl-datasheets-0614.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | AVALANCHE RATED | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 79W Tc | 16A | 60A | 0.115Ohm | 150 mJ | N-Channel | 640pF @ 25V | 115m Ω @ 10A, 10V | 4V @ 250μA | 16A Tc | 44nC @ 10V | 10V | ±20V |
