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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFS33N15D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 3.8W Ta 170W Tc | 33A | 130A | 0.056Ohm | 330 mJ | N-Channel | 2020pF @ 25V | 56m Ω @ 20A, 10V | 5.5V @ 250μA | 33A Tc | 90nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRF3706S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20V | 88W Tc | N-Channel | 2410pF @ 10V | 8.5m Ω @ 15A, 10V | 2V @ 250μA | 77A Tc | 35nC @ 4.5V | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFL4105 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfl4105tr-datasheets-7808.pdf | TO-261-4, TO-261AA | 4 | EAR99 | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 30 | 1 | Not Qualified | R-PDSO-G4 | SILICON | SINGLE | DRAIN | 55V | 55V | 1W Ta | 3.7A | 0.045Ohm | N-Channel | 660pF @ 25V | 45m Ω @ 3.7A, 10V | 4V @ 250μA | 3.7A Ta | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFS23N20D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 3.8W Ta 170W Tc | 24A | 96A | 0.1Ohm | 250 mJ | N-Channel | 1960pF @ 25V | 100m Ω @ 14A, 10V | 5.5V @ 250μA | 24A Tc | 86nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRLMS1902TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | SOT-23-6 | 6 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.7W Ta | 3.2A | 18A | 0.1Ohm | N-Channel | 300pF @ 15V | 100m Ω @ 2.2A, 4.5V | 700mV @ 250μA | 3.2A Ta | 7nC @ 4.5V | 2.7V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| IRLML2803TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlml2803tr-datasheets-0951.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | HIGH RELIABILITY | 8541.21.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 150°C | -55°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 0.54W | 30V | 30V | TO-236AB | 1.2A | 0.25Ohm | N-Channel | 85pF @ 25V | 250m Ω @ 910mA, 10V | 1V @ 250μA | 1.2A Ta | 5nC @ 10V | ||||||||||||||||||||||||||||||||||||||
| IRL620 | Vishay Siliconix | $1.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl620pbf-datasheets-2361.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 3 | No | 1 | Single | TO-220AB | 360pF | 4.2 ns | 31ns | 17 ns | 18 ns | 5.2A | 10V | 200V | 50W Tc | 800mOhm | 200V | N-Channel | 360pF @ 25V | 800mOhm @ 3.1A, 5V | 2V @ 250μA | 5.2A Tc | 16nC @ 5V | 800 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||
| IRLR3103TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 107W Tc | TO-252AA | 20A | 220A | 0.019Ohm | 240 mJ | N-Channel | 1600pF @ 25V | 19m Ω @ 33A, 10V | 1V @ 250μA | 55A Tc | 50nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| IRF7604TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7604tr-datasheets-0923.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 20V | P-Channel | 590pF @ 15V | 90m Ω @ 2.4A, 4.5V | 700mV @ 250μA | 3.6A Ta | 20nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ44 | Vishay Siliconix | $0.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlz44pbf-datasheets-1724.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 3 | 1 | Single | TO-220AB | 3.3nF | 17 ns | 230ns | 110 ns | 42 ns | 50A | 10V | 60V | 150W Tc | 28mOhm | 60V | N-Channel | 3300pF @ 25V | 28mOhm @ 31A, 5V | 2V @ 250μA | 50A Tc | 66nC @ 5V | 28 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||
| IRF7603TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7603tr-datasheets-0976.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 30V | N-Channel | 520pF @ 25V | 35m Ω @ 3.7A, 10V | 1V @ 250μA | 5.6A Ta | 27nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7601TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 5.7A | 30A | 0.035Ohm | N-Channel | 650pF @ 15V | 35m Ω @ 3.8A, 4.5V | 700mV @ 250μA | 5.7A Ta | 22nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF7204 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7204tr-datasheets-7407.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | 245 | 30 | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2.5W Tc | 5.3A | 0.06Ohm | P-Channel | 860pF @ 10V | 60m Ω @ 5.3A, 10V | 2.5V @ 250μA | 5.3A Ta | 25nC @ 10V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||
| IRLR3303TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 30V | 68W Tc | N-Channel | 870pF @ 25V | 31m Ω @ 21A, 10V | 1V @ 250μA | 35A Tc | 26nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF840LCS | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf840lclpbf-datasheets-5874.pdf | 500V | 8A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | 125W | D2PAK | 1.1nF | 12 ns | 25ns | 19 ns | 27 ns | 8A | 30V | 500V | 3.1W Ta 125W Tc | 850mOhm | 500V | N-Channel | 1100pF @ 25V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 39nC @ 10V | 850 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IRLL014NTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-943316-datasheets-3941.pdf | TO-261-4, TO-261AA | 4 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1W Ta | 2A | 16A | 0.14Ohm | 32 mJ | N-Channel | 230pF @ 25V | 140m Ω @ 2A, 10V | 2V @ 250μA | 2A Ta | 14nC @ 10V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| IRL3103L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2002 | TO-262-3 Long Leads, I2Pak, TO-262AA | EAR99 | 30V | 94W Tc | N-Channel | 1650pF @ 25V | 12m Ω @ 34A, 10V | 1V @ 250μA | 64A Tc | 33nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPC48 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfpc48-datasheets-1029.pdf | 600V | 8.9A | TO-247-3 | Contains Lead | TO-247-3 | 1.8nF | 8.9A | 600V | 170W Tc | N-Channel | 1800pF @ 25V | 820mOhm @ 5.3A, 10V | 4V @ 250μA | 8.9A Tc | 110nC @ 10V | 820 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLML2502TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | /files/infineontechnologies-irlml2502tr-datasheets-0937.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 150°C | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.25W | 20V | 20V | TO-236AB | 4.2A | 33A | 0.045Ohm | N-Channel | 740pF @ 15V | 45m Ω @ 4.2A, 4.5V | 1.2V @ 250μA | 4.2A Ta | 12nC @ 5V | |||||||||||||||||||||||||||||||||||||||
| IRLMS1503TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | SOT-23-6 | 6 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 3.2A | 18A | 0.1Ohm | N-Channel | 210pF @ 25V | 100m Ω @ 2.2A, 10V | 1V @ 250μA | 3.2A Ta | 9.6nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFI9520G | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi9520gpbf-datasheets-2429.pdf | -100V | -5.2A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | TO-220-3 | 390pF | 9.6 ns | 29ns | 25 ns | 21 ns | 5.2A | 20V | 100V | 37W Tc | 600mOhm | -100V | P-Channel | 390pF @ 25V | 600mOhm @ 3.1A, 10V | 4V @ 250μA | 5.2A Tc | 18nC @ 10V | 600 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI3443DVTR | Infineon Technologies | $0.91 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-si3443dvtr-datasheets-0946.pdf | SOT-23-6 Thin, TSOT-23-6 | 20V | P-Channel | 1079pF @ 10V | 65m Ω @ 4.4A, 4.5V | 1.5V @ 250μA | 4.4A Ta | 15nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4410DY | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 10A | 50A | 0.0135Ohm | 400 mJ | N-Channel | 1585pF @ 15V | 13.5m Ω @ 10A, 10V | 1V @ 250μA | 10A Ta | 45nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRLI520G | Vishay Siliconix | $0.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irli520gpbf-datasheets-3969.pdf | 7.2A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 6.000006g | 3 | No | 1 | Single | 37W | 1 | TO-220-3 | 490pF | 9.8 ns | 64ns | 27 ns | 21 ns | 7.2A | 10V | 100V | 37W Tc | 270mOhm | 100V | N-Channel | 490pF @ 25V | 270mOhm @ 4.3A, 5V | 2V @ 250μA | 7.2A Tc | 12nC @ 5V | 270 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||
| IRFU9020 | Vishay Siliconix | $7.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu9020pbf-datasheets-5922.pdf | -50V | -9.9A | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | 3 | Single | TO-251AA | 490pF | 8.2 ns | 67ns | 25 ns | 12 ns | 9.9A | 20V | 50V | 42W Tc | 280mOhm | -50V | P-Channel | 490pF @ 25V | 280mOhm @ 5.7A, 10V | 4V @ 250μA | 9.9A Tc | 14nC @ 10V | 280 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRL510S | Vishay Siliconix | $6.96 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl510strlpbf-datasheets-6331.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.02mm | 1.437803g | 1 | Single | D2PAK | 250pF | 9.3 ns | 47ns | 18 ns | 16 ns | 5.6A | 10V | 100V | 3.7W Ta 43W Tc | 540mOhm | 100V | N-Channel | 250pF @ 25V | 540mOhm @ 3.4A, 5V | 2V @ 250μA | 5.6A Tc | 6.1nC @ 5V | 540 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||
| IRLZ44NSTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 55V | 3.8W Ta 110W Tc | N-Channel | 1700pF @ 25V | 22mOhm @ 25A, 10V | 2V @ 250μA | 47A Tc | 48nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLI620G | Vishay Siliconix | $0.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irli620gpbf-datasheets-8644.pdf | 200V | 4.1A | TO-220-3 Full Pack, Isolated Tab | Contains Lead | 3 | No | Single | 30W | TO-220-3 | 360pF | 4.2 ns | 31ns | 17 ns | 18 ns | 4A | 10V | 200V | 30W Tc | 800mOhm | 200V | N-Channel | 360pF @ 25V | 800mOhm @ 2.4A, 5V | 2V @ 250μA | 4A Tc | 16nC @ 10V | 800 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||
| IRLI630G | Vishay Siliconix | $0.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irli630gpbf-datasheets-3522.pdf | 200V | 6.2A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | 32W | TO-220-3 | 1.1nF | 8 ns | 57ns | 33 ns | 38 ns | 6.2A | 10V | 200V | 35W Tc | 400mOhm | 200V | N-Channel | 1100pF @ 25V | 400mOhm @ 3.7A, 5V | 2V @ 250μA | 6.2A Tc | 40nC @ 10V | 400 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||
| IRLL110TR | Vishay Siliconix | $0.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irll110trpbf-datasheets-8859.pdf | 100V | 1.5A | TO-261-4, TO-261AA | 6.7mm | 1.45mm | 3.7mm | Contains Lead | 250.212891mg | 4 | no | EAR99 | 4 | 1 | 2W | 9.3 ns | 47ns | 18 ns | 16 ns | 1.5A | 10V | 2W Ta 3.1W Tc | 100V | N-Channel | 250pF @ 25V | 540m Ω @ 900mA, 5V | 2V @ 250μA | 1.5A Tc | 6.1nC @ 5V | 4V 5V | ±10V |
