Single MOSFETs Transistors(33658)

Name	Manufacturer	Pricing(USD)	Quantity	Size(LxWxH)	Part Status	Series	Mount	Mounting Type	Operating Temperature	Packaging	Moisture Sensitivity Level (MSL)	Termination	Max Operating Temperature	Min Operating Temperature	Technology	Operating Mode	RoHS Status	Published	Datasheet	Voltage - Rated DC	Current Rating	Package / Case	Length	Height	Width	Lead Free	Number of Terminations	Factory Lead Time	Weight	REACH SVHC	Resistance	Number of Pins	Pbfree Code	ECCN Code	Additional Feature	Radiation Hardening	HTS Code	JESD-609 Code	Terminal Finish	Surface Mount	Terminal Position	Terminal Form	Peak Reflow Temperature (Cel)	Pin Count	Number of Channels	Element Configuration	Time@Peak Reflow Temperature-Max (s)	Power Dissipation	Number of Elements	Subcategory	Qualification Status	JESD-30 Code	Supplier Device Package	Input Capacitance	Turn On Delay Time	Rise Time	Fall Time (Typ)	Turn-Off Delay Time	Continuous Drain Current (ID)	Gate to Source Voltage (Vgs)	Dual Supply Voltage	Transistor Element Material	Configuration	Case Connection	Transistor Application	Drain to Source Voltage (Vdss)	DS Breakdown Voltage-Min	Threshold Voltage	Power Dissipation-Max	JEDEC-95 Code	Drain Current-Max (Abs) (ID)	Pulsed Drain Current-Max (IDM)	Drain-source On Resistance-Max	Drain to Source Resistance	Avalanche Energy Rating (Eas)	Drain to Source Breakdown Voltage	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Nominal Vgs	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Rds On Max	Drive Voltage (Max Rds On,Min Rds On)	Vgs (Max)
IRFU5305	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®		Through Hole	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	2000	https://pdf.utmel.com/r/datasheets/infineontechnologies-irfu5305-datasheets-0778.pdf			TO-251-3 Short Leads, IPak, TO-251AA					3							EAR99	HIGH RELIABILITY			e0	Tin/Lead (Sn/Pb)	NO	SINGLE		245				30		1		Not Qualified	R-PSIP-T3										SILICON	SINGLE WITH BUILT-IN DIODE	DRAIN	SWITCHING	55V	55V		110W Tc		31A	110A	0.065Ohm		280 mJ		P-Channel	1200pF @ 25V		65m Ω @ 16A, 10V	4V @ 250μA	31A Tc	63nC @ 10V		10V	±20V
IRL3803STRL	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®		Surface Mount	-55°C~175°C TJ	Tape & Reel (TR)	1 (Unlimited)				MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	2002				TO-263-3, D2Pak (2 Leads + Tab), TO-263AB					2							EAR99	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE			e3	Matte Tin (Sn) - with Nickel (Ni) barrier	YES	SINGLE	GULL WING	260				30		1	FET General Purpose Power	Not Qualified	R-PSSO-G2										SILICON	SINGLE WITH BUILT-IN DIODE	DRAIN	SWITCHING	30V	30V		3.8W Ta 200W Tc		140A	470A	0.006Ohm		610 mJ		N-Channel	5000pF @ 25V		6m Ω @ 71A, 10V	1V @ 250μA	140A Tc	140nC @ 4.5V		4.5V 10V	±16V
IRL520NS	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®		Surface Mount	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	1998				TO-263-3, D2Pak (2 Leads + Tab), TO-263AB					2								LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY					YES	SINGLE	GULL WING	NOT SPECIFIED				NOT SPECIFIED		1			R-PSSO-G2										SILICON	SINGLE WITH BUILT-IN DIODE	DRAIN	SWITCHING	100V	100V		3.8W Ta 48W Tc		10A	35A	0.22Ohm		85 mJ		N-Channel	440pF @ 25V		180m Ω @ 6A, 10V	2V @ 250μA	10A Tc	20nC @ 5V		4V 10V	±16V
IRFZ14S	Vishay Siliconix	$4.54	RFQ Min: 1 Mult: 1	0x0x0	download		Surface Mount	Surface Mount	-55°C~175°C TJ	Tube	1 (Unlimited)		175°C	-55°C	MOSFET (Metal Oxide)		Non-RoHS Compliant	2014	https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz14spbf-datasheets-7501.pdf			TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	10.41mm	4.83mm	9.65mm				1.437803g			3													1	Single							D2PAK	300pF	10 ns	50ns	19 ns	13 ns	10A	20V						60V			3.7W Ta 43W Tc					200mOhm			N-Channel	300pF @ 25V		200mOhm @ 6A, 10V	4V @ 250μA	10A Tc	11nC @ 10V	200 mΩ	10V	±20V
IRL630STRL	Vishay Siliconix		RFQ Min: 1 Mult: 1	0x0x0	download		Surface Mount	Surface Mount	-55°C~150°C TJ	Tape & Reel (TR)	1 (Unlimited)		150°C	-55°C	MOSFET (Metal Oxide)		Non-RoHS Compliant	2016		200V	9A	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	10.67mm	4.83mm	9.65mm	Contains Lead			1.437803g			3													1	Single							D2PAK	1.1nF	8 ns	57ns	33 ns	38 ns	9A	10V						200V			3.1W Ta 74W Tc					400mOhm		200V	N-Channel	1100pF @ 25V		400mOhm @ 5.4A, 5V	2V @ 250μA	9A Tc	40nC @ 10V	400 mΩ	4V 5V	±10V
IRL530NSTRR	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®		Surface Mount	-55°C~175°C TJ	Tape & Reel (TR)	1 (Unlimited)				MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	1998				TO-263-3, D2Pak (2 Leads + Tab), TO-263AB					2							EAR99	AVALANCHE RATED, HIGH RELIABILITY			e3	Matte Tin (Sn) - with Nickel (Ni) barrier	YES	SINGLE	GULL WING	260				30		1	FET General Purpose Power	Not Qualified	R-PSSO-G2										SILICON	SINGLE WITH BUILT-IN DIODE	DRAIN	SWITCHING	100V	100V		3.8W Ta 79W Tc		17A	60A	0.12Ohm		150 mJ		N-Channel	800pF @ 25V		100m Ω @ 9A, 10V	2V @ 250μA	17A Tc	34nC @ 5V		4V 10V	±20V
IRL3103STRL	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®		Surface Mount	-55°C~175°C TJ	Tape & Reel (TR)	1 (Unlimited)				MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	2001				TO-263-3, D2Pak (2 Leads + Tab), TO-263AB					2							EAR99	AVALANCHE RATED			e3	Matte Tin (Sn) - with Nickel (Ni) barrier	YES	SINGLE	GULL WING	260				30		1		Not Qualified	R-PSSO-G2										SILICON	SINGLE WITH BUILT-IN DIODE	DRAIN	SWITCHING	30V	30V		94W Tc		64A	220A	0.012Ohm		130 mJ		N-Channel	1650pF @ 25V		12m Ω @ 34A, 10V	1V @ 250μA	64A Tc	33nC @ 4.5V		4.5V 10V	±16V
IRL530NL	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®		Through Hole	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)		Non-RoHS Compliant	1998				TO-262-3 Long Leads, I2Pak, TO-262AA																																												100V			3.8W Ta 79W Tc								N-Channel	800pF @ 25V		100m Ω @ 9A, 10V	2V @ 250μA	17A Tc	34nC @ 5V		4V 10V	±20V
IRL1004	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®		Through Hole	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	1999				TO-220-3					3								AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE					NO	SINGLE		NOT SPECIFIED				NOT SPECIFIED		1			R-PSFM-T3										SILICON	SINGLE WITH BUILT-IN DIODE	DRAIN	SWITCHING	40V	40V		200W Tc	TO-220AB	130A	520A	0.0065Ohm		700 mJ		N-Channel	5330pF @ 25V		6.5m Ω @ 78A, 10V	1V @ 250μA	130A Tc	100nC @ 4.5V		4.5V 10V	±16V
IRL3102	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®		Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	1997	https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3102-datasheets-0738.pdf			TO-220-3					3							EAR99	LOGIC LEVEL COMPATIBLE			e3	Matte Tin (Sn) - with Nickel (Ni) barrier	NO	SINGLE		NOT SPECIFIED				NOT SPECIFIED		1		Not Qualified	R-PSFM-T3										SILICON	SINGLE WITH BUILT-IN DIODE	DRAIN	SWITCHING	20V	20V		89W Tc	TO-220AB	61A	240A	0.013Ohm		220 mJ		N-Channel	2500pF @ 15V		13m Ω @ 37A, 7V	700mV @ 250μA	61A Tc	58nC @ 4.5V		4.5V 7V	±10V
IRFU9120N	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®		Through Hole	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	1998	https://pdf.utmel.com/r/datasheets/infineontechnologies-irfu9120n-datasheets-0744.pdf			TO-251-3 Short Leads, IPak, TO-251AA					3							EAR99	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE			e0	Tin/Lead (Sn/Pb)	NO	SINGLE		245				30		1		Not Qualified	R-PSIP-T3										SILICON	SINGLE WITH BUILT-IN DIODE	DRAIN	SWITCHING	100V	100V		40W Tc		6.6A	26A	0.48Ohm		100 mJ		P-Channel	350pF @ 25V		480m Ω @ 3.9A, 10V	4V @ 250μA	6.6A Tc	27nC @ 10V		10V	±20V
IRL3502	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®		Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	1997	https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3502-datasheets-0748.pdf			TO-220-3					3							EAR99	LOGIC LEVEL COMPATIBLE			e3	Matte Tin (Sn) - with Nickel (Ni) barrier	NO	SINGLE		NOT SPECIFIED				NOT SPECIFIED		1		Not Qualified	R-PSFM-T3										SILICON	SINGLE		SWITCHING	20V	20V		140W Tc	TO-220AB	110A		0.007Ohm				N-Channel	4700pF @ 15V		7m Ω @ 64A, 7V	700mV @ 250μA	110A Tc	110nC @ 4.5V		4.5V 7V	±10V
IRFZ46NS	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®		Surface Mount	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	2004				TO-263-3, D2Pak (2 Leads + Tab), TO-263AB					2								AVALANCHE RATED, HIGH RELIABILITY					YES	SINGLE	GULL WING	NOT SPECIFIED				NOT SPECIFIED		1			R-PSSO-G2										SILICON	SINGLE WITH BUILT-IN DIODE	DRAIN	SWITCHING	55V	55V		3.8W Ta 107W Tc		39A	180A	0.0165Ohm		152 mJ		N-Channel	1696pF @ 25V		16.5m Ω @ 28A, 10V	4V @ 250μA	53A Tc	72nC @ 10V		10V	±20V
IRFS52N15DPBF	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®	Surface Mount	Surface Mount	-55°C~175°C TJ	Tube	1 (Unlimited)	SMD/SMT			MOSFET (Metal Oxide)	ENHANCEMENT MODE	ROHS3 Compliant	2002	/files/infineontechnologies-irfb52n15dpbf-datasheets-3597.pdf	150V	60A	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	10.668mm	4.826mm	9.65mm	Lead Free	2	52 Weeks		No SVHC	32MOhm	3		EAR99				e3	Matte Tin (Sn) - with Nickel (Ni) barrier			GULL WING	260			Single	30	320W	1	FET General Purpose Power	Not Qualified	R-PSSO-G2			16 ns	47ns	25 ns	28 ns	60A	30V	150V	SILICON		DRAIN	SWITCHING			5V	3.8W Ta 230W Tc			240A			470 mJ	150V	N-Channel	2770pF @ 25V	5 V	32m Ω @ 36A, 10V	5V @ 250μA	51A Tc	89nC @ 10V		10V	±30V
IRF6646TR1	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®		Surface Mount	-40°C~150°C TJ	Tape & Reel (TR)	2 (1 Year)				MOSFET (Metal Oxide)		Non-RoHS Compliant	2005				DirectFET™ Isometric MN																																												80V			2.8W Ta 89W Tc								N-Channel	2060pF @ 25V		9.5m Ω @ 12A, 10V	4.9V @ 150μA	12A Ta 68A Tc	50nC @ 10V		10V	±20V
IRFZ30	Vishay Siliconix	$10.01	RFQ Min: 1 Mult: 1	0x0x0	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)		150°C	-55°C	MOSFET (Metal Oxide)		Non-RoHS Compliant	2000	https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz30pbf-datasheets-8746.pdf			TO-220-3	10.41mm	9.01mm	4.7mm				6.000006g			3				No									1	Single							TO-220AB	1.6nF	12 ns	16ns	16 ns	23 ns	30A	20V						50V			74W Tc					45mOhm		50V	N-Channel	1600pF @ 25V		50mOhm @ 16A, 10V	4V @ 250μA	30A Tc	30nC @ 10V	50 mΩ	10V	±20V
IRFU9220	Vishay Siliconix	$0.73	RFQ Min: 1 Mult: 1	0x0x0	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)		150°C	-55°C	MOSFET (Metal Oxide)		Non-RoHS Compliant	2016	https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9220pbf-datasheets-1966.pdf			TO-251-3 Short Leads, IPak, TO-251AA	6.73mm	6.22mm	2.38mm				329.988449mg																1	Single							TO-251AA	340pF	8.8 ns	27ns	19 ns	7.3 ns	3.6A	20V						200V			2.5W Ta 42W Tc					1.5Ohm			P-Channel	340pF @ 25V		1.5Ohm @ 2.2A, 10V	4V @ 250μA	3.6A Tc	20nC @ 10V	1.5 Ω	10V	±20V
IRL2505S	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®		Surface Mount	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	1998				TO-263-3, D2Pak (2 Leads + Tab), TO-263AB					2							EAR99	LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY		8541.29.00.95	e0	Tin/Lead (Sn/Pb)	YES	SINGLE	GULL WING	225				30		1		Not Qualified	R-PSSO-G2										SILICON	SINGLE WITH BUILT-IN DIODE	DRAIN	SWITCHING	55V	55V		3.8W Ta 200W Tc		104A	360A	0.01Ohm		500 mJ		N-Channel	5000pF @ 25V		8m Ω @ 54A, 10V	2V @ 250μA	104A Tc	130nC @ 5V		4V 10V	±16V
IRFZ40	Vishay Siliconix	$0.99	RFQ Min: 1 Mult: 1	0x0x0	download		Through Hole	Through Hole	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	2011	https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz40pbf-datasheets-1903.pdf			TO-220-3	10.41mm	9.01mm	4.7mm		3		6.000006g			3	no	EAR99		No		e0	TIN LEAD					3	1	Single		126W	1	FET General Purpose Power					15 ns	25ns	12 ns	35 ns	35A	20V		SILICON		DRAIN	SWITCHING	60V	60V		150W Tc	TO-220AB	50A	200A	0.028Ohm				N-Channel	1900pF @ 25V		28m Ω @ 31A, 10V	4V @ 250μA	50A Tc	67nC @ 10V		10V	±20V
IRL3302S	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®	Surface Mount	Surface Mount	-55°C~150°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	1998		20V	39A	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB				Contains Lead	2							EAR99				e3	MATTE TIN OVER NICKEL		SINGLE	GULL WING	260				30		1		Not Qualified	R-PSSO-G2				110ns			39A			SILICON	SINGLE WITH BUILT-IN DIODE	DRAIN	SWITCHING				57W Tc			160A	0.023Ohm		130 mJ		N-Channel	1300pF @ 15V		20m Ω @ 23A, 7V	700mV @ 250μA	39A Tc	31nC @ 4.5V		4.5V 7V	±10V
94-2989	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®		Surface Mount	-55°C~175°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)		Non-RoHS Compliant	2001				TO-263-3, D2Pak (2 Leads + Tab), TO-263AB																															D2PAK													55V			3.8W Ta 130W Tc								N-Channel	1970pF @ 25V		14mOhm @ 32A, 10V	4V @ 250μA	64A Tc	81nC @ 10V		10V	±20V
IRFS11N50A	Vishay Siliconix	$1.92	RFQ Min: 1 Mult: 1	0x0x0	download		Surface Mount	Surface Mount	-55°C~150°C TJ	Tube	1 (Unlimited)		150°C	-55°C	MOSFET (Metal Oxide)		Non-RoHS Compliant	2016	https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfs11n50atrlp-datasheets-5178.pdf	500V	11A	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	10.67mm	4.83mm	9.65mm	Contains Lead			1.437803g			3													1	Single							D2PAK	1.423nF	14 ns	35ns	28 ns	32 ns	11A	30V						500V			170W Tc					520mOhm		500V	N-Channel	1423pF @ 25V		520mOhm @ 6.6A, 10V	4V @ 250μA	11A Tc	52nC @ 10V	520 mΩ	10V	±30V
IRL3302	Infineon Technologies		RFQ Min: 1 Mult: 1	0x0x0	download	HEXFET®		Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)				MOSFET (Metal Oxide)	ENHANCEMENT MODE	Non-RoHS Compliant	1998	https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3302-datasheets-0728.pdf			TO-220-3					3							EAR99	LOGIC LEVEL COMPATIBLE			e3	Matte Tin (Sn) - with Nickel (Ni) barrier	NO	SINGLE		NOT SPECIFIED				NOT SPECIFIED		1		Not Qualified	R-PSFM-T3										SILICON	SINGLE		SWITCHING	20V	20V		57W Tc	TO-220AB	39A		0.02Ohm				N-Channel	1300pF @ 15V		20m Ω @ 23A, 7V	700mV @ 250μA	39A Tc	31nC @ 4.5V		4.5V 7V	±10V
IRFZ34	Vishay Siliconix	$0.20	RFQ Min: 1 Mult: 1	0x0x0	download		Through Hole	Through Hole	-55°C~175°C TJ	Tube	1 (Unlimited)		175°C	-55°C	MOSFET (Metal Oxide)		Non-RoHS Compliant	2016	https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz34pbf-datasheets-3177.pdf			TO-220-3	10.41mm	9.01mm	4.7mm	Contains Lead			6.000006g		50mOhm	3				No									1	Single							TO-220AB	1.2nF	13 ns	100ns	52 ns	29 ns	30A	20V						60V			88W Tc					50mOhm			N-Channel	1200pF @ 25V		50mOhm @ 18A, 10V	4V @ 250μA	30A Tc	46nC @ 10V	50 mΩ	10V	±20V
IRFU9120	Vishay Siliconix	$0.38	RFQ Min: 1 Mult: 1	0x0x0	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)		150°C	-55°C	MOSFET (Metal Oxide)		Non-RoHS Compliant	2017	https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9120trpbf-datasheets-5334.pdf	-100V	-5.6A	TO-251-3 Short Leads, IPak, TO-251AA				Contains Lead						3													1	Single		2.5W	1				TO-251AA	390pF	9.6 ns	29ns	25 ns	21 ns	5.6A	20V						100V			2.5W Ta 42W Tc					600mOhm		-100V	P-Channel	390pF @ 25V		600mOhm @ 3.4A, 10V	4V @ 250μA	5.6A Tc	18nC @ 10V	600 mΩ	10V	±20V
IRFU9110	Vishay Siliconix	$0.13	RFQ Min: 1 Mult: 1	0x0x0	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)		150°C	-55°C	MOSFET (Metal Oxide)		Non-RoHS Compliant	2016	https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9110trpbf-datasheets-7143.pdf			TO-251-3 Short Leads, IPak, TO-251AA	6.73mm	6.22mm	2.38mm				329.988449mg			3				No									1	Single							TO-251AA	200pF	10 ns	27ns	17 ns	15 ns	3.1A	20V						100V			2.5W Ta 25W Tc					1.2Ohm			P-Channel	200pF @ 25V		1.2Ohm @ 1.9A, 10V	4V @ 250μA	3.1A Tc	8.7nC @ 10V	1.2 Ω	10V	±20V
IRFZ44S	Vishay Siliconix	$0.40	RFQ Min: 1 Mult: 1	0x0x0	download		Surface Mount	Surface Mount	-55°C~175°C TJ	Tube	1 (Unlimited)		150°C	-55°C	MOSFET (Metal Oxide)		Non-RoHS Compliant	2016	https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz44spbf-datasheets-3540.pdf	60V	50A	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	10.67mm	4.83mm	9.65mm	Contains Lead			1.437803g			3													1	Single							D2PAK	1.9nF	14 ns	110ns	92 ns	45 ns	50A	20V						60V			3.7W Ta 150W Tc					28mOhm			N-Channel	1900pF @ 25V		28mOhm @ 31A, 10V	4V @ 250μA	50A Tc	67nC @ 10V	28 mΩ	10V	±20V
IRFU9210	Vishay Siliconix		RFQ Min: 1 Mult: 1	0x0x0	download		Through Hole	Through Hole	-55°C~150°C TJ	Tube	1 (Unlimited)		150°C	-55°C	MOSFET (Metal Oxide)		Non-RoHS Compliant	2016	https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu9210pbf-datasheets-5149.pdf			TO-251-3 Short Leads, IPak, TO-251AA	6.73mm	6.22mm	2.38mm				329.988449mg			3				No									1	Single							TO-251AA	170pF	8 ns	12ns	13 ns	11 ns	1.9A	20V						200V			2.5W Ta 25W Tc					3Ohm		-200V	P-Channel	170pF @ 25V		3Ohm @ 1.1A, 10V	4V @ 250μA	1.9A Tc	8.9nC @ 10V	3 Ω	10V	±20V
IRFR310	Vishay Siliconix	$0.60	RFQ Min: 1 Mult: 1	0x0x0	download		Surface Mount	Surface Mount	-55°C~150°C TJ	Tube	1 (Unlimited)		150°C	-55°C	MOSFET (Metal Oxide)		ROHS3 Compliant	2017	https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr310trpbf-datasheets-0789.pdf	400V	1.7A	TO-252-3, DPak (2 Leads + Tab), SC-63	6.73mm	2.39mm	6.22mm	Contains Lead			1.437803g			3													1	Single		25W					D-Pak	170pF	7.9 ns	9.9ns	11 ns	21 ns	1.7A	20V						400V			2.5W Ta 25W Tc					3.6Ohm		400V	N-Channel	170pF @ 25V		3.6Ohm @ 1A, 10V	4V @ 250μA	1.7A Tc	12nC @ 10V	3.6 Ω	10V	±20V
RSS120N03TB	ROHM Semiconductor	$4.96	RFQ Min: 1 Mult: 1	0x0x0	download		Surface Mount	Surface Mount	150°C TJ	Tape & Reel (TR)	1 (Unlimited)				MOSFET (Metal Oxide)		ROHS3 Compliant	2004	https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rss120n03tb-datasheets-9752.pdf	30V	12A	8-SOIC (0.154, 3.90mm Width)				Lead Free						8																					8-SOP	1.36nF		17ns			12A							30V			2W Ta								N-Channel	1360pF @ 10V		10mOhm @ 12A, 10V	2.5V @ 1mA	12A Ta	25nC @ 5V	10 mΩ	4V 10V	20V

Single MOSFETs Transistors(33658)

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