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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRL530NSTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.8W Ta 79W Tc | 17A | 60A | 0.12Ohm | 150 mJ | N-Channel | 800pF @ 25V | 100m Ω @ 9A, 10V | 2V @ 250μA | 17A Tc | 34nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRL3103STRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 94W Tc | 64A | 220A | 0.012Ohm | 130 mJ | N-Channel | 1650pF @ 25V | 12m Ω @ 34A, 10V | 1V @ 250μA | 64A Tc | 33nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| IRL530NL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-262-3 Long Leads, I2Pak, TO-262AA | 100V | 3.8W Ta 79W Tc | N-Channel | 800pF @ 25V | 100m Ω @ 9A, 10V | 2V @ 250μA | 17A Tc | 34nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL640S | Vishay Siliconix | $1.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl640strlpbf-datasheets-2956.pdf | 200V | 17A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | D2PAK | 1.8nF | 8 ns | 83ns | 52 ns | 44 ns | 17A | 10V | 200V | 3.1W Ta 125W Tc | 180mOhm | 200V | N-Channel | 1800pF @ 25V | 180mOhm @ 10A, 5V | 2V @ 250μA | 17A Tc | 66nC @ 5V | 180 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||
| IRL3102S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | EAR99 | 20V | 89W Tc | N-Channel | 2500pF @ 15V | 13m Ω @ 37A, 7V | 700mV @ 250μA | 61A Tc | 58nC @ 4.5V | 4.5V 7V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL530STRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl530strrpbf-datasheets-7905.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 1.437803g | 1 | Single | D2PAK | 930pF | 4.7 ns | 100ns | 48 ns | 22 ns | 15A | 10V | 100V | 3.7W Ta 88W Tc | 160mOhm | 100V | N-Channel | 930pF @ 25V | 160mOhm @ 9A, 5V | 2V @ 250μA | 15A Tc | 28nC @ 5V | 160 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||
| IRL540S | Vishay Siliconix | $0.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | 100V | 28A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 1 | Single | D2PAK | 2.2nF | 8.5 ns | 170ns | 80 ns | 35 ns | 28A | 10V | 100V | 3.7W Ta 150W Tc | 77mOhm | N-Channel | 2200pF @ 25V | 77mOhm @ 17A, 5V | 2V @ 250μA | 28A Tc | 64nC @ 5V | 77 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| IRL3202S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 69W Tc | 48A | 190A | 0.019Ohm | 270 mJ | N-Channel | 2000pF @ 15V | 16m Ω @ 29A, 7V | 700mV @ 250μA | 48A Tc | 43nC @ 4.5V | 4.5V 7V | ±10V | ||||||||||||||||||||||||||||||||||||||||||
| IRFS52N15DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irfb52n15dpbf-datasheets-3597.pdf | 150V | 60A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 52 Weeks | No SVHC | 32MOhm | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 320W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 16 ns | 47ns | 25 ns | 28 ns | 60A | 30V | 150V | SILICON | DRAIN | SWITCHING | 5V | 3.8W Ta 230W Tc | 240A | 470 mJ | 150V | N-Channel | 2770pF @ 25V | 5 V | 32m Ω @ 36A, 10V | 5V @ 250μA | 51A Tc | 89nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||
| IRF6646TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | DirectFET™ Isometric MN | 80V | 2.8W Ta 89W Tc | N-Channel | 2060pF @ 25V | 9.5m Ω @ 12A, 10V | 4.9V @ 150μA | 12A Ta 68A Tc | 50nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ30 | Vishay Siliconix | $10.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz30pbf-datasheets-8746.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 3 | No | 1 | Single | TO-220AB | 1.6nF | 12 ns | 16ns | 16 ns | 23 ns | 30A | 20V | 50V | 74W Tc | 45mOhm | 50V | N-Channel | 1600pF @ 25V | 50mOhm @ 16A, 10V | 4V @ 250μA | 30A Tc | 30nC @ 10V | 50 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFU9220 | Vishay Siliconix | $0.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9220pbf-datasheets-1966.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | 329.988449mg | 1 | Single | TO-251AA | 340pF | 8.8 ns | 27ns | 19 ns | 7.3 ns | 3.6A | 20V | 200V | 2.5W Ta 42W Tc | 1.5Ohm | P-Channel | 340pF @ 25V | 1.5Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 20nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRL2505S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 200W Tc | 104A | 360A | 0.01Ohm | 500 mJ | N-Channel | 5000pF @ 25V | 8m Ω @ 54A, 10V | 2V @ 250μA | 104A Tc | 130nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| IRFZ40 | Vishay Siliconix | $0.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz40pbf-datasheets-1903.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 3 | 6.000006g | 3 | no | EAR99 | No | e0 | TIN LEAD | 3 | 1 | Single | 126W | 1 | FET General Purpose Power | 15 ns | 25ns | 12 ns | 35 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 150W Tc | TO-220AB | 50A | 200A | 0.028Ohm | N-Channel | 1900pF @ 25V | 28m Ω @ 31A, 10V | 4V @ 250μA | 50A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IRL3302S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | 20V | 39A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | e3 | MATTE TIN OVER NICKEL | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | 110ns | 39A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 57W Tc | 160A | 0.023Ohm | 130 mJ | N-Channel | 1300pF @ 15V | 20m Ω @ 23A, 7V | 700mV @ 250μA | 39A Tc | 31nC @ 4.5V | 4.5V 7V | ±10V | |||||||||||||||||||||||||||||||||||||||||
| 94-2989 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 55V | 3.8W Ta 130W Tc | N-Channel | 1970pF @ 25V | 14mOhm @ 32A, 10V | 4V @ 250μA | 64A Tc | 81nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS11N50A | Vishay Siliconix | $1.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfs11n50atrlp-datasheets-5178.pdf | 500V | 11A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | D2PAK | 1.423nF | 14 ns | 35ns | 28 ns | 32 ns | 11A | 30V | 500V | 170W Tc | 520mOhm | 500V | N-Channel | 1423pF @ 25V | 520mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 52nC @ 10V | 520 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRL3302 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3302-datasheets-0728.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | SWITCHING | 20V | 20V | 57W Tc | TO-220AB | 39A | 0.02Ohm | N-Channel | 1300pF @ 15V | 20m Ω @ 23A, 7V | 700mV @ 250μA | 39A Tc | 31nC @ 4.5V | 4.5V 7V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||
| IRL1004 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | TO-220-3 | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 200W Tc | TO-220AB | 130A | 520A | 0.0065Ohm | 700 mJ | N-Channel | 5330pF @ 25V | 6.5m Ω @ 78A, 10V | 1V @ 250μA | 130A Tc | 100nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRL3102 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3102-datasheets-0738.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 89W Tc | TO-220AB | 61A | 240A | 0.013Ohm | 220 mJ | N-Channel | 2500pF @ 15V | 13m Ω @ 37A, 7V | 700mV @ 250μA | 61A Tc | 58nC @ 4.5V | 4.5V 7V | ±10V | |||||||||||||||||||||||||||||||||||||||||
| IRFU9120N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfu9120n-datasheets-0744.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | e0 | Tin/Lead (Sn/Pb) | NO | SINGLE | 245 | 30 | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 40W Tc | 6.6A | 26A | 0.48Ohm | 100 mJ | P-Channel | 350pF @ 25V | 480m Ω @ 3.9A, 10V | 4V @ 250μA | 6.6A Tc | 27nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRL3502 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3502-datasheets-0748.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | SWITCHING | 20V | 20V | 140W Tc | TO-220AB | 110A | 0.007Ohm | N-Channel | 4700pF @ 15V | 7m Ω @ 64A, 7V | 700mV @ 250μA | 110A Tc | 110nC @ 4.5V | 4.5V 7V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFZ46NS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | AVALANCHE RATED, HIGH RELIABILITY | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 107W Tc | 39A | 180A | 0.0165Ohm | 152 mJ | N-Channel | 1696pF @ 25V | 16.5m Ω @ 28A, 10V | 4V @ 250μA | 53A Tc | 72nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| RSS120N03TB | ROHM Semiconductor | $4.96 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rss120n03tb-datasheets-9752.pdf | 30V | 12A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8-SOP | 1.36nF | 17ns | 12A | 30V | 2W Ta | N-Channel | 1360pF @ 10V | 10mOhm @ 12A, 10V | 2.5V @ 1mA | 12A Ta | 25nC @ 5V | 10 mΩ | 4V 10V | 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9110TR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9110trpbf-datasheets-7143.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | 1 | Single | 2.5W | 1 | D-Pak | 200pF | 10 ns | 27ns | 17 ns | 15 ns | 3.1A | 20V | 100V | 2.5W Ta 25W Tc | 1.2Ohm | -100V | P-Channel | 200pF @ 25V | 1.2Ohm @ 1.9A, 10V | 4V @ 250μA | 3.1A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFU420 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr420pbf-datasheets-7930.pdf | 500V | 2.4A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Contains Lead | 329.988449mg | 3 | 1 | Single | 42W | TO-251AA | 360pF | 8 ns | 8.6ns | 16 ns | 33 ns | 2.4A | 20V | 500V | 2.5W Ta 42W Tc | 3Ohm | 500V | N-Channel | 360pF @ 25V | 3Ohm @ 1.4A, 10V | 4V @ 250μA | 2.4A Tc | 19nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFU210 | Vishay Siliconix | $0.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr210trrpbf-datasheets-3671.pdf | 200V | 2.6A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Contains Lead | 329.988449mg | 3 | 1 | Single | 2.5W | 1 | TO-251AA | 140pF | 8.2 ns | 17ns | 8.9 ns | 14 ns | 2.6A | 20V | 200V | 2.5W Ta 25W Tc | 1.5Ohm | 200V | N-Channel | 140pF @ 25V | 1.5Ohm @ 1.6A, 10V | 4V @ 250μA | 2.6A Tc | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFR9020 | Vishay Siliconix | $5.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu9020pbf-datasheets-5922.pdf | -50V | -9.9A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Contains Lead | 1.437803g | 3 | 1 | Single | D-Pak | 490pF | 8.2 ns | 67ns | 25 ns | 12 ns | 9.9A | 20V | 50V | 42W Tc | 280mOhm | -50V | P-Channel | 490pF @ 25V | 280mOhm @ 5.7A, 10V | 4V @ 250μA | 9.9A Tc | 14nC @ 10V | 280 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFZ24S | Vishay Siliconix | $0.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz24s-datasheets-0641.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.54mm | 4.69mm | 8.81mm | Contains Lead | 1.437803g | 100mOhm | 3 | 1 | Single | D2PAK | 640pF | 13 ns | 58ns | 42 ns | 25 ns | 17A | 20V | 60V | 3.7W Ta 60W Tc | 100mOhm | 60V | N-Channel | 640pF @ 25V | 100mOhm @ 10A, 10V | 4V @ 250μA | 17A Tc | 25nC @ 10V | 100 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFZ34NS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 68W Tc | 29A | 100A | 0.04Ohm | 130 mJ | N-Channel | 700pF @ 25V | 40m Ω @ 16A, 10V | 4V @ 250μA | 29A Tc | 34nC @ 10V | 10V | ±20V |
