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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Row Spacing | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRLR3915PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3915trpbf-datasheets-2872.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 8541.29.00.95 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 120W Tc | TO-252AA | 30A | 240A | 0.014Ohm | 200 mJ | N-Channel | 1870pF @ 25V | 14m Ω @ 30A, 10V | 3V @ 250μA | 30A Tc | 92nC @ 10V | 5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| 2SK2503TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/rohmsemiconductor-2sk2503tl-datasheets-9653.pdf | 60V | 5A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | No SVHC | 135mOhm | 3 | EAR99 | Copper, Tin | No | e2 | TIN COPPER | GULL WING | 260 | 3 | Single | 10 | 20W | 1 | FET General Purpose Power | R-PSSO-G2 | 5 ns | 20ns | 20 ns | 50 ns | 5A | 20V | 60V | SILICON | SWITCHING | 20W Tc | 5A | 20A | 60V | N-Channel | 520pF @ 10V | 2.5 V | 135m Ω @ 2.5A, 10V | 2.5V @ 1mA | 5A Ta | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| NTHS4111PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nths4111pt1g-datasheets-9443.pdf | -30V | -6.1A | 8-SMD, Flat Lead | Lead Free | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | e3 | Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-C8 | 3.3A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 700mW Ta | 0.045Ohm | P-Channel | 1500pF @ 24V | 45m Ω @ 4.4A, 10V | 3V @ 250μA | 3.3A Ta | 28nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFR24N15DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2002 | /files/infineontechnologies-irfr24n15dtrpbf-datasheets-4130.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | EAR99 | not_compliant | 150V | 140W Tc | N-Channel | 890pF @ 25V | 95m Ω @ 14A, 10V | 5V @ 250μA | 24A Tc | 45nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3710ZLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf3710zlpbf-datasheets-0339.pdf | 100V | 59A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 15 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 160W | 1 | FET General Purpose Power | 17 ns | 77ns | 56 ns | 41 ns | 59A | 20V | SILICON | DRAIN | SWITCHING | 160W Tc | 240A | 200 mJ | 100V | N-Channel | 2900pF @ 25V | 4 V | 18m Ω @ 35A, 10V | 4V @ 250μA | 59A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFSL4710PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfb4710pbf-datasheets-0978.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | EAR99 | compliant | NO | FET General Purpose Power | Single | 100V | 3.8W Ta 200W Tc | 75A | N-Channel | 6160pF @ 25V | 14m Ω @ 45A, 10V | 5.5V @ 250μA | 75A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7832Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7832ztr-datasheets-0954.pdf | 8-SOIC (0.154, 3.90mm Width) | 30V | 2.5W Ta | N-Channel | 3860pF @ 15V | 3.8m Ω @ 20A, 10V | 2.35V @ 250μA | 21A Ta | 45nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3716LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3716pbf-datasheets-0487.pdf | 20V | 180A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | Single | 210W | TO-262 | 5.09nF | 140ns | 36 ns | 38 ns | 180A | 20V | 20V | 210W Tc | 4.8mOhm | 20V | N-Channel | 5090pF @ 10V | 4mOhm @ 90A, 10V | 3V @ 250μA | 180A Tc | 79nC @ 4.5V | 4 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU3418PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | TO-251-3 Short Leads, IPak, TO-251AA | 80V | 3.8W Ta 140W Tc | N-Channel | 3510pF @ 25V | 14m Ω @ 18A, 10V | 5.5V @ 250μA | 70A Tc | 94nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF8010SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf8010strlpbf-datasheets-5037.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 260W Tc | 75A | 320A | 0.015Ohm | 310 mJ | N-Channel | 3830pF @ 25V | 15m Ω @ 45A, 10V | 4V @ 250μA | 80A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF1503SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf1503spbf-datasheets-0380.pdf | 30V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 14 Weeks | No SVHC | 3.3MOhm | 3 | EAR99 | No | Single | 200W | 1 | 1.3V | 17 ns | 130ns | 48 ns | 59 ns | 75A | 20V | 200W Tc | 30V | N-Channel | 5730pF @ 25V | 4 V | 3.3m Ω @ 140A, 10V | 4V @ 250μA | 75A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF3704ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3704zlpbf-datasheets-9967.pdf | 20V | 67A | TO-220-3 | 8.77mm | Lead Free | No SVHC | 7.9MOhm | 3 | No | 57W | 1 | TO-220AB | 1.22nF | 8.9 ns | 38ns | 4.2 ns | 11 ns | 67A | 20V | 20V | 20V | 2.1V | 57W Tc | 17 ns | 11.1mOhm | 20V | N-Channel | 1220pF @ 10V | 2.1 V | 7.9mOhm @ 21A, 10V | 2.55V @ 250μA | 67A Tc | 13nC @ 4.5V | 7.9 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF3007SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | 75V | 62A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.572mm | 9.65mm | Lead Free | 14 Weeks | 3 | EAR99 | No | Single | 120W | 1 | 12 ns | 80ns | 49 ns | 55 ns | 62A | 20V | 120W Tc | 75V | N-Channel | 3270pF @ 25V | 12.6m Ω @ 48A, 10V | 4V @ 250μA | 62A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU3802PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irlr3802trpbf-datasheets-4409.pdf | 12V | 84A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | 3 | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 88W | 1 | FET General Purpose Power | 11 ns | 14ns | 17 ns | 21 ns | 84A | 12V | SILICON | DRAIN | SWITCHING | 88W Tc | 12V | N-Channel | 2490pF @ 6V | 8.5m Ω @ 15A, 4.5V | 1.9V @ 250μA | 84A Tc | 41nC @ 5V | 2.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| IRF6616TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6616-datasheets-0786.pdf | 30V | 19A | DirectFET™ Isometric MX | Lead Free | No SVHC | 7 | 2.8W | DIRECTFET™ MX | 3.765nF | 19ns | 4.4 ns | 21 ns | 19A | 30V | 40V | 30V | 1.8V | 2.8W Ta 89W Tc | 15 ns | 3.7mOhm | 40V | N-Channel | 3765pF @ 20V | 1.8 V | 5mOhm @ 19A, 10V | 2.25V @ 250μA | 19A Ta 106A Tc | 44nC @ 4.5V | 5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRLR2908PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr2908trpbf-datasheets-3500.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 39 Weeks | EAR99 | 80V | 120W Tc | N-Channel | 1890pF @ 25V | 28m Ω @ 23A, 10V | 2.5V @ 250μA | 30A Tc | 33nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3504PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfu3504pbf-datasheets-0091.pdf | 40V | 87A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | No SVHC | 9.2mOhm | 3 | No | Single | 140W | D-Pak | 2.15nF | 11 ns | 53ns | 22 ns | 36 ns | 87A | 20V | 40V | 40V | 4V | 140W Tc | 7.8mOhm | 40V | N-Channel | 2150pF @ 25V | 4 V | 9.2mOhm @ 30A, 10V | 4V @ 250μA | 30A Tc | 71nC @ 10V | 9.2 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFU48ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr48ztrpbf-datasheets-9197.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 91W Tc | 42A | 250A | 0.011Ohm | 74 mJ | N-Channel | 1720pF @ 25V | 11m Ω @ 37A, 10V | 4V @ 50μA | 42A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3411PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irfr3411trpbf-datasheets-7385.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 130W Tc | TO-252AA | 32A | 110A | 0.044Ohm | 185 mJ | N-Channel | 1960pF @ 25V | 44m Ω @ 16A, 10V | 4V @ 250μA | 32A Tc | 71nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF7488PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7488trpbf-datasheets-6414.pdf | 80V | 6.3A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 4.05mm | Lead Free | 8 | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 2.5W | 1 | 13 ns | 12ns | 16 ns | 44 ns | 6.3A | 20V | 80V | SINGLE WITH BUILT-IN DIODE | SWITCHING | 6.3 mm | 4V | 2.5W Ta | 50A | 0.029Ohm | 96 mJ | 80V | N-Channel | 1680pF @ 25V | 4 V | 29m Ω @ 3.8A, 10V | 4V @ 250μA | 6.3A Ta | 57nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRLR9343PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlr9343trpbf-datasheets-9482.pdf | -55V | -20A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | No SVHC | 105MOhm | 3 | EAR99 | No | e3 | MATTE TIN OVER NICKEL | GULL WING | 260 | Single | 30 | 79W | 1 | R-PSSO-G2 | 9.5 ns | 24ns | 9.5 ns | 21 ns | 20A | 20V | SILICON | DRAIN | AMPLIFIER | 55V | -1V | 79W Tc | TO-252AA | 60A | -55V | P-Channel | 660pF @ 50V | 105m Ω @ 3.4A, 10V | 1V @ 250μA | 20A Tc | 47nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF644NLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf644nspbf-datasheets-8681.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | 2.387001g | 1 | Single | I2PAK | 1.06nF | 10 ns | 21ns | 17 ns | 30 ns | 14A | 20V | 250V | 150W Tc | 240mOhm | 250V | N-Channel | 1060pF @ 25V | 240mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 54nC @ 10V | 240 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7342D2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | -55V | -3.4A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | No SVHC | 105MOhm | 8 | EAR99 | No | 2W | 1 | Other Transistors | 14 ns | 10ns | 22 ns | 43 ns | -3.4A | 20V | -55V | Single | 55V | -1V | 2W Ta | -55V | P-Channel | 690pF @ 25V | -1 V | 105m Ω @ 3.4A, 10V | 1V @ 250μA | 3.4A Ta | 38nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF6637TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6637tr1-datasheets-9928.pdf | 30V | 14A | DirectFET™ Isometric MP | Lead Free | No SVHC | 7 | 2.3W | DIRECTFET™ MP | 1.33nF | 15ns | 3.8 ns | 14 ns | 14A | 20V | 30V | 30V | 1.8V | 2.3W Ta 42W Tc | 13 ns | 30V | N-Channel | 1330pF @ 15V | 1.8 V | 7.7mOhm @ 14A, 10V | 2.35V @ 250μA | 14A Ta 59A Tc | 17nC @ 4.5V | 7.7 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF6626 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6626tr1-datasheets-0045.pdf | DirectFET™ Isometric ST | 3 | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | BOTTOM | NO LEAD | 260 | 30 | 1 | Not Qualified | R-XBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.2W Ta 42W Tc | 16A | 130A | 0.0054Ohm | 24 mJ | N-Channel | 2380pF @ 15V | 5.4m Ω @ 16A, 10V | 2.35V @ 250μA | 16A Ta 72A Tc | 29nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF634NSPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf634nlpbf-datasheets-0021.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 1.437803g | 3 | 1 | Single | D2PAK | 620pF | 8.4 ns | 16ns | 15 ns | 28 ns | 8A | 20V | 250V | 3.8W Ta 88W Tc | 435mOhm | N-Channel | 620pF @ 25V | 435mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 34nC @ 10V | 435 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7484PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7484pbf-datasheets-0174.pdf | 40V | 14A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | No | 2.5W | 1 | 8-SO | 3.52nF | 5ns | 58 ns | 180 ns | 14A | 8V | 40V | 2.5W Ta | 10MOhm | 40V | N-Channel | 3520pF @ 25V | 10mOhm @ 14A, 7V | 2V @ 250μA | 14A Ta | 100nC @ 7V | 10 mΩ | 7V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR48ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr48ztrpbf-datasheets-9197.pdf | 55V | 62A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10.3886mm | 2.3876mm | 6.73mm | Lead Free | 15 Weeks | No SVHC | 11MOhm | 3 | EAR99 | No | Single | 91W | 1 | 15 ns | 61ns | 35 ns | 40 ns | 42A | 20V | 55V | 4V | 91W Tc | 40 ns | 55V | N-Channel | 1720pF @ 25V | 4 V | 11m Ω @ 37A, 10V | 4V @ 50μA | 42A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRLU8203PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2002 | /files/infineontechnologies-irlu8203pbf-datasheets-0076.pdf | 30V | 110A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | No SVHC | 6.8mOhm | 4 | Single | 140W | 1 | I-PAK | 2.43nF | 99ns | 69 ns | 30 ns | 110A | 20V | 30V | 30V | 3V | 140W Tc | 9mOhm | 30V | N-Channel | 2430pF @ 15V | 3 V | 6.8mOhm @ 15A, 10V | 3V @ 250μA | 110A Tc | 50nC @ 4.5V | 6.8 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRLU8113PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr8113pbf-datasheets-7610.pdf | 30V | 94A | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.1mm | 2.3mm | Lead Free | No SVHC | 3 | 89W | I-PAK | 2.92nF | 9.2 ns | 15 ns | 94A | 20V | 30V | 2.25V | 89W Tc | 49 ns | 7.4mOhm | 30V | N-Channel | 2920pF @ 15V | 2.25 V | 6mOhm @ 15A, 10V | 2.25V @ 250μA | 94A Tc | 32nC @ 4.5V | 6 mΩ | 4.5V 10V | ±20V |
