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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF1902PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | 20V | 4.2A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | No | 2.5W | 1 | 8-SO | 310pF | 5.9 ns | 13ns | 19 ns | 23 ns | 4A | 12V | 20V | 2.5W Ta | 85mOhm | 20V | N-Channel | 310pF @ 15V | 85mOhm @ 4A, 4.5V | 700mV @ 250μA | 4.2A Ta | 7.5nC @ 4.5V | 85 mΩ | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| IRFR110TR | Vishay Siliconix | $0.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr110trpbf-datasheets-0113.pdf | 100V | 4.3A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Contains Lead | 1.437803g | 3 | 1 | Single | 2.5W | 1 | D-Pak | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 4.3A | 20V | 100V | 2.5W Ta 25W Tc | 540mOhm | N-Channel | 180pF @ 25V | 540mOhm @ 2.6A, 10V | 4V @ 250μA | 4.3A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFR224 | Vishay Siliconix | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu224pbf-datasheets-5033.pdf | 250V | 3.8A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Contains Lead | 1.437803g | 3 | 1 | Single | 2.5W | 1 | D-Pak | 260pF | 7 ns | 13ns | 12 ns | 20 ns | 3.8A | 20V | 250V | 2.5W Ta 42W Tc | 1.1Ohm | 250V | N-Channel | 260pF @ 25V | 1.1Ohm @ 2.3A, 10V | 4V @ 250μA | 3.8A Tc | 14nC @ 10V | 1.1 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFP264NPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp264npbf-datasheets-0503.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 38.000013g | Unknown | 3 | 1 | Single | TO-247-3 | 3.86nF | 17 ns | 62ns | 53 ns | 52 ns | 44A | 20V | 250V | 4V | 380W Tc | 60mOhm | 250V | N-Channel | 3860pF @ 25V | 60mOhm @ 25A, 10V | 4V @ 250μA | 44A Tc | 210nC @ 10V | 60 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFR024 | Vishay Siliconix | $0.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu024pbf-datasheets-7718.pdf | 60V | 14A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Contains Lead | 1.437803g | 3 | 1 | Single | 2.5W | 1 | D-Pak | 640pF | 13 ns | 58ns | 42 ns | 25 ns | 14A | 20V | 60V | 2.5W Ta 42W Tc | 100mOhm | 60V | N-Channel | 640pF @ 25V | 100mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 25nC @ 10V | 100 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFPG40 | Vishay Siliconix | $3.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfpg40pbf-datasheets-4247.pdf | 1kV | 4.3A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Contains Lead | 38.000013g | 3 | 1 | Single | 150W | TO-247-3 | 1.6nF | 15 ns | 33ns | 30 ns | 100 ns | 4.3A | 20V | 1000V | 150W Tc | 3.5Ohm | 1kV | N-Channel | 1600pF @ 25V | 3.5Ohm @ 2.6A, 10V | 4V @ 250μA | 4.3A Tc | 120nC @ 10V | 3.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFP15N60LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp15n60lpbf-datasheets-0465.pdf | TO-247-3 | 3 | unknown | NO | SINGLE | 3 | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 280W Tc | 15A | 60A | 0.46Ohm | 320 mJ | N-Channel | 2720pF @ 25V | 460m Ω @ 9A, 10V | 5V @ 250μA | 15A Tc | 100nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2740 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-2sk2740-datasheets-0467.pdf | 600V | 7A | TO-220-3 Full Pack | Lead Free | 3 | e1 | TIN SILVER COPPER | SINGLE | 260 | 3 | 10 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 22ns | 7A | SILICON | SINGLE | ISOLATED | SWITCHING | 30W Tc | TO-220AB | 7A | 28A | N-Channel | 1050pF @ 10V | 1.2 Ω @ 4A, 10V | 4V @ 1mA | 7A Ta | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFR214 | Vishay Siliconix | $0.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu214pbf-datasheets-4957.pdf | 250V | 2.2A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Contains Lead | 1.437803g | 1 | Single | D-Pak | 140pF | 7 ns | 7.6ns | 7 ns | 16 ns | 2.2A | 20V | 250V | 2.5W Ta 25W Tc | 2Ohm | 250V | N-Channel | 140pF @ 25V | 2Ohm @ 1.3A, 10V | 4V @ 250μA | 2.2A Tc | 8.2nC @ 10V | 2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFPC50A | Vishay Siliconix | $0.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfpc50apbf-datasheets-4063.pdf | 600V | 11A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Contains Lead | 38.000013g | 3 | 1 | Single | 180W | TO-247-3 | 2.1nF | 15 ns | 40ns | 29 ns | 33 ns | 11A | 30V | 600V | 180W Tc | 580mOhm | 600V | N-Channel | 2100pF @ 25V | 580mOhm @ 6A, 10V | 4V @ 250μA | 11A Tc | 70nC @ 10V | 580 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IRF2805LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf2805strlpbf-datasheets-1477.pdf | 55V | 135A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | No | 200W | 14 ns | 120ns | 110 ns | 68 ns | 135A | 20V | 200W Tc | 55V | N-Channel | 5110pF @ 25V | 4.7m Ω @ 104A, 10V | 4V @ 250μA | 135A Tc | 230nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP450NPBF | Vishay Siliconix | $23.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp450npbf-datasheets-0418.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 38.000013g | 3 | 1 | Single | TO-247-3 | 2.26nF | 20 ns | 63ns | 25 ns | 29 ns | 14A | 30V | 500V | 200W Tc | 370mOhm | 500V | N-Channel | 2260pF @ 25V | 370mOhm @ 8.4A, 10V | 5V @ 250μA | 14A Tc | 77nC @ 10V | 370 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFPC60LC | Vishay Siliconix | $2.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfpc60lc-datasheets-0420.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 38.000013g | 3 | 1 | Single | TO-247-3 | 3.5nF | 17 ns | 57ns | 38 ns | 43 ns | 16A | 30V | 600V | 280W Tc | 400mOhm | 600V | N-Channel | 3500pF @ 25V | 400mOhm @ 9.6A, 10V | 4V @ 250μA | 16A Tc | 120nC @ 10V | 400 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF3710ZSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf3710zlpbf-datasheets-0339.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 160W Tc | 59A | 240A | 0.018Ohm | 200 mJ | N-Channel | 2900pF @ 25V | 18m Ω @ 35A, 10V | 4V @ 250μA | 59A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF2204LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf2204spbf-datasheets-3862.pdf | 40V | 170A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 200W | 1 | TO-262 | 5.89nF | 140ns | 170A | 20V | 40V | 200W Tc | 40V | N-Channel | 5890pF @ 25V | 3.6mOhm @ 130A, 10V | 4V @ 250μA | 170A Tc | 200nC @ 10V | 3.6 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU3412PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | TO-251-3 Short Leads, IPak, TO-251AA | 100V | 140W Tc | N-Channel | 3430pF @ 25V | 25m Ω @ 29A, 10V | 5.5V @ 250μA | 48A Tc | 89nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3412PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineon-irfr3412pbf-datasheets-0674.pdf | 100V | 48A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 3 | D-Pak | 3.43nF | 68ns | 48A | 100V | 140W Tc | N-Channel | 3430pF @ 25V | 25mOhm @ 29A, 10V | 5.5V @ 250μA | 48A Tc | 89nC @ 10V | 25 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3808LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3808strlpbf-datasheets-5938.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 75V | 200W Tc | N-Channel | 5310pF @ 25V | 7mOhm @ 82A, 10V | 4V @ 250μA | 106A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPS37N50A | Vishay Siliconix | $12.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfps37n50a-datasheets-0452.pdf | 500V | 36A | TO-274AA | 16.1mm | 20.8mm | 5.3mm | Contains Lead | 38.000013g | 3 | 1 | Single | 446W | 1 | SUPER-247™ (TO-274AA) | 5.579nF | 23 ns | 98ns | 80 ns | 52 ns | 36A | 30V | 500V | 446W Tc | 130mOhm | N-Channel | 5579pF @ 25V | 130mOhm @ 22A, 10V | 4V @ 250μA | 36A Tc | 180nC @ 10V | 130 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IRF1312PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irf1312pbf-datasheets-0455.pdf | 80V | 95A | TO-220-3 | Lead Free | No SVHC | 10Ohm | 3 | No | Single | 210W | 1 | TO-220AB | 5.45nF | 51ns | 51 ns | 47 ns | 95A | 20V | 80V | 80V | 5.5V | 3.8W Ta 210W Tc | 80V | N-Channel | 5450pF @ 25V | 5.5 V | 10mOhm @ 57A, 10V | 5.5V @ 250μA | 95A Tc | 140nC @ 10V | 10 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFPF40 | Vishay Siliconix | $1.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfpf40-datasheets-0459.pdf | 900V | 4.7A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Contains Lead | 38.000013g | 3 | 1 | Single | TO-247-3 | 1.6nF | 15 ns | 36ns | 32 ns | 110 ns | 4.7A | 20V | 900V | 150W Tc | 2.5Ohm | 900V | N-Channel | 1600pF @ 25V | 2.5Ohm @ 2.8A, 10V | 4V @ 250μA | 4.7A Tc | 120nC @ 10V | 2.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFIZ48VPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfiz48vpbf-datasheets-0400.pdf | 60V | 39A | TO-220-3 Full Pack | 10.6172mm | 9.8mm | 4.826mm | Lead Free | No SVHC | 3 | EAR99 | No | Single | 43W | 7.6 ns | 200ns | 166 ns | 157 ns | 39A | 20V | 4V | 43W Tc | 60V | N-Channel | 1985pF @ 25V | 12m Ω @ 43A, 10V | 4V @ 250μA | 39A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFIB7N50LPBF | Vishay Siliconix | $1.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfib7n50lpbf-datasheets-0403.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 6.000006g | 3 | 1 | Single | TO-220-3 | 2.22nF | 23 ns | 36ns | 19 ns | 47 ns | 6.8A | 30V | 500V | 46W Tc | 380mOhm | 500V | N-Channel | 2220pF @ 25V | 380mOhm @ 4.1A, 10V | 5V @ 250μA | 6.8A Tc | 92nC @ 10V | 380 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFIB5N50LPBF | Vishay Siliconix | $1.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irfib5n50lpbf-datasheets-0405.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 3 | 6.000006g | Unknown | 3 | 3 | 1 | Single | 1 | Not Qualified | 13 ns | 17ns | 10 ns | 26 ns | 4.7A | 30V | SILICON | SWITCHING | 5V | 42W Tc | TO-220AB | 0.8Ohm | 500V | N-Channel | 1000pF @ 25V | 800m Ω @ 2.4A, 10V | 5V @ 250μA | 4.7A Tc | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IRFPE40 | Vishay Siliconix | $0.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfpe40-datasheets-0407.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 3 | 38.000013g | Unknown | 3 | no | EAR99 | No | 1 | Single | 1 | FET General Purpose Power | 16 ns | 36ns | 32 ns | 100 ns | 5.4A | 20V | SILICON | DRAIN | SWITCHING | 4V | 150W Tc | TO-247AC | 22A | 2Ohm | 490 mJ | 800V | N-Channel | 1900pF @ 25V | 4 V | 2 Ω @ 3.2A, 10V | 4V @ 250μA | 5.4A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRLR3915PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3915trpbf-datasheets-2872.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 8541.29.00.95 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 120W Tc | TO-252AA | 30A | 240A | 0.014Ohm | 200 mJ | N-Channel | 1870pF @ 25V | 14m Ω @ 30A, 10V | 3V @ 250μA | 30A Tc | 92nC @ 10V | 5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| 2SK2503TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/rohmsemiconductor-2sk2503tl-datasheets-9653.pdf | 60V | 5A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | No SVHC | 135mOhm | 3 | EAR99 | Copper, Tin | No | e2 | TIN COPPER | GULL WING | 260 | 3 | Single | 10 | 20W | 1 | FET General Purpose Power | R-PSSO-G2 | 5 ns | 20ns | 20 ns | 50 ns | 5A | 20V | 60V | SILICON | SWITCHING | 20W Tc | 5A | 20A | 60V | N-Channel | 520pF @ 10V | 2.5 V | 135m Ω @ 2.5A, 10V | 2.5V @ 1mA | 5A Ta | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||
| NTHS4111PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nths4111pt1g-datasheets-9443.pdf | -30V | -6.1A | 8-SMD, Flat Lead | Lead Free | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | e3 | Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-C8 | 3.3A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 700mW Ta | 0.045Ohm | P-Channel | 1500pF @ 24V | 45m Ω @ 4.4A, 10V | 3V @ 250μA | 3.3A Ta | 28nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFR24N15DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2002 | /files/infineontechnologies-irfr24n15dtrpbf-datasheets-4130.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | EAR99 | not_compliant | 150V | 140W Tc | N-Channel | 890pF @ 25V | 95m Ω @ 14A, 10V | 5V @ 250μA | 24A Tc | 45nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3710ZLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf3710zlpbf-datasheets-0339.pdf | 100V | 59A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 15 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 160W | 1 | FET General Purpose Power | 17 ns | 77ns | 56 ns | 41 ns | 59A | 20V | SILICON | DRAIN | SWITCHING | 160W Tc | 240A | 200 mJ | 100V | N-Channel | 2900pF @ 25V | 4 V | 18m Ω @ 35A, 10V | 4V @ 250μA | 59A Tc | 120nC @ 10V | 10V | ±20V |
