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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFR4104TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 140W Tc | TO-252AA | 42A | 480A | 0.0055Ohm | 145 mJ | N-Channel | 2950pF @ 25V | 5.5m Ω @ 42A, 10V | 4V @ 250μA | 42A Tc | 89nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| 62-0063PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7476trpbf-datasheets-3505.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 12V | 2.5W Ta | N-Channel | 2550pF @ 6V | 8mOhm @ 15A, 4.5V | 1.9V @ 250μA | 15A Ta | 40nC @ 4.5V | 2.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6611TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6611tr1-datasheets-9913.pdf | 30V | 27A | DirectFET™ Isometric MX | Lead Free | No SVHC | 5 | 3.9W | DIRECTFET™ MX | 4.86nF | 57ns | 6.5 ns | 24 ns | 22A | 20V | 30V | 30V | 2.25V | 3.9W Ta 89W Tc | 24 ns | 2mOhm | 30V | N-Channel | 4860pF @ 15V | 2.25 V | 2.6mOhm @ 27A, 10V | 2.25V @ 250μA | 32A Ta 150A Tc | 56nC @ 4.5V | 2.6 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF6621TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6621tr1-datasheets-9897.pdf | 30V | 12A | DirectFET™ Isometric SQ | Lead Free | No SVHC | 7 | 2.2W | DIRECTFET™ SQ | 1.46nF | 14ns | 4.1 ns | 16 ns | 12A | 20V | 30V | 30V | 1.8V | 2.2W Ta 42W Tc | 9.8 ns | 7mOhm | 30V | N-Channel | 1460pF @ 15V | 1.8 V | 9.1mOhm @ 12A, 10V | 2.25V @ 250μA | 12A Ta 55A Tc | 17.5nC @ 4.5V | 9.1 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF6678TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6678-datasheets-5360.pdf | 30V | 30A | DirectFET™ Isometric MX | Lead Free | No SVHC | 7 | 2.8W | DIRECTFET™ MX | 5.64nF | 71ns | 8.1 ns | 27 ns | 30A | 20V | 30V | 30V | 2.25V | 2.8W Ta 89W Tc | 43 ns | 1.7Ohm | 30V | N-Channel | 5640pF @ 15V | 2.25 V | 2.2mOhm @ 30A, 10V | 2.25V @ 250μA | 30A Ta 150A Tc | 65nC @ 4.5V | 2.2 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF2907ZS-7PPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-irf2907zs7ppbf-datasheets-9830.pdf | 75V | 160A | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 10.3378mm | 4.5466mm | 10.05mm | Lead Free | 6 | No SVHC | 4.5MOhm | 7 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G6 | 21 ns | 90ns | 44 ns | 92 ns | 160A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | 35 ns | 53 ns | 75V | N-Channel | 7580pF @ 25V | 4 V | 3.8m Ω @ 110A, 10V | 4V @ 250μA | 160A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| TPCA8016-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Digi-Reel® | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpca8016hte12lqm-datasheets-9839.pdf | 8-PowerVDFN | 8 | 45W | 45W | 1 | 8-SOP Advance (5x5) | 1.375nF | 4ns | 3 ns | 25A | 20V | 60V | 21mOhm | 60V | N-Channel | 1375pF @ 10V | 21mOhm @ 13A, 10V | 2.3V @ 1mA | 25A Ta | 22nC @ 10V | 21 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT13N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft13n100-datasheets-9841.pdf | 1kV | 13A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 900mOhm | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 33ns | 32 ns | 62 ns | 12.5A | 20V | DRAIN | SWITCHING | 1000V | 300W Tc | 50A | 1kV | N-Channel | 4000pF @ 25V | 900m Ω @ 500mA, 10V | 4.5V @ 4mA | 12.5A Tc | 155nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFB4212PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-irfb4212pbf-datasheets-9849.pdf | 100V | 18A | TO-220-3 | 10.6426mm | 9.02mm | 4.82mm | Lead Free | 3 | No SVHC | 72.5mOhm | 3 | EAR99 | HIGH RELIABILITY | No | Single | 60W | 1 | FET General Purpose Power | 7.7 ns | 28ns | 3.9 ns | 14 ns | 18A | 20V | 100V | SILICON | AMPLIFIER | 5V | 60W Tc | TO-220AB | 62 ns | 57A | 25 mJ | 100V | N-Channel | 550pF @ 50V | 5 V | 72.5m Ω @ 13A, 10V | 5V @ 250μA | 18A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| MIC94031BM4 TR | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TinyFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/microchiptechnology-mic94030ym4tr-datasheets-4747.pdf | TO-253-4, TO-253AA | MIC94031 | SOT-143 | 16V | 568mW Ta | P-Channel | 100pF @ 12V | 450mOhm @ 100mA, 10V | 1.4V @ 250μA | 1A Ta | 2.7V 10V | 16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7416PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7416trpbf-datasheets-1022.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 10A | 45A | 0.02Ohm | 370 mJ | P-Channel | 1700pF @ 25V | 20m Ω @ 5.6A, 10V | 1V @ 250μA | 10A Ta | 92nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| MIC94031YM4-TR | Microchip Technology | $0.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TinyFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microchiptechnology-mic94030ym4tr-datasheets-4747.pdf | -16V | -1A | TO-253-4, TO-253AA | Lead Free | 4 | MIC94031 | 568mW | 1 | SOT-143 | 100pF | 1A | 16V | 568mW Ta | 1Ohm | P-Channel | 100pF @ 12V | 450mOhm @ 100mA, 10V | 1.4V @ 250μA | 1A Ta | 450 mΩ | 2.7V 10V | 16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8010-H(TE12L,Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSV | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | unknown | YES | FET General Purpose Power | Single | 200V | 1.6W Ta 45W Tc | 5.5A | N-Channel | 600pF @ 10V | 450m Ω @ 2.7A, 10V | 4V @ 1mA | 5.5A Ta | 10nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSS100N03TB | ROHM Semiconductor | $0.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rss100n03tb-datasheets-9691.pdf | 30V | 10A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | e2 | TIN COPPER | DUAL | GULL WING | 260 | 8 | 10 | 1 | FET General Purpose Power | Not Qualified | 16ns | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2W Ta | 40A | N-Channel | 1070pF @ 10V | 13m Ω @ 10A, 10V | 2.5V @ 1mA | 10A Ta | 14nC @ 5V | 4V 10V | 20V | ||||||||||||||||||||||||||||||||||||||||||||
| TPCA8009-H(TE12L,Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpca8009hte12lq-datasheets-9763.pdf | 150V | 7A | 8-PowerVDFN | Lead Free | 8 | unknown | 7ns | 7A | 1.6W Ta 45W Tc | N-Channel | 600pF @ 10V | 350m Ω @ 3.5A, 10V | 4V @ 1mA | 7A Ta | 10nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSS140N03TB | ROHM Semiconductor | $5.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rss140n03tb-datasheets-9802.pdf | 30V | 14A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | yes | FET General Purpose Power | 52ns | 14A | Single | 2W Ta | N-Channel | 3150pF @ 10V | 6.7m Ω @ 14A, 10V | 2.5V @ 1mA | 14A Ta | 37nC @ 5V | 4V 10V | 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HAT2116H-EL-E | Renesas Electronics America | $0.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-hat2116hele-datasheets-9806.pdf | 30V | 30A | SC-100, SOT-669 | Lead Free | 4 | 16 Weeks | 5 | yes | EAR99 | No | SINGLE | GULL WING | 260 | 5 | 20 | 15W | 1 | FET General Purpose Power | R-PSSO-G4 | 15 ns | 55ns | 11 ns | 48 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 15W Tc | N-Channel | 1650pF @ 10V | 8.2m Ω @ 15A, 10V | 30A Ta | 26nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NTJS4151PT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntjs4151pt1g-datasheets-0051.pdf | -20V | -3.3A | SOT-363-6 | Contains Lead | 6 | 6 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | YES | 1W | DUAL | GULL WING | 240 | 6 | Single | 30 | 1W | 1 | Not Qualified | 850pF | 2.7 ns | 3.3A | 12V | SWITCHING | P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 180mOhm | -20V | 60 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1010ZSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | 55V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | No SVHC | 7.5mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 150ns | 92 ns | 36 ns | 75A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 140W Tc | 33 ns | 55V | N-Channel | 2840pF @ 25V | 4 V | 7.5m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| HAT2099H-EL-E | Renesas Electronics America | $0.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-hat2099hele-datasheets-9826.pdf | 30V | 50A | SC-100, SOT-669 | Lead Free | 4 | 16 Weeks | 5 | yes | EAR99 | No | SINGLE | GULL WING | 260 | 5 | 20 | 30W | 1 | FET General Purpose Power | R-PSSO-G4 | 26 ns | 60ns | 26 ns | 85 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30W Tc | 200A | 0.0073Ohm | N-Channel | 4750pF @ 10V | 3.7m Ω @ 25A, 10V | 50A Ta | 75nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STE40NK90ZD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFREDmesh™ | Chassis Mount, Screw | Chassis Mount | -65°C~150°C TJ | Tube | 1 (Unlimited) | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-ste40nk90zd-datasheets-9829.pdf | 900V | 40A | ISOTOP | Contains Lead | 4 | No SVHC | 170mOhm | 4 | EAR99 | not_compliant | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | STE40 | 4 | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | 102ns | 200 ns | 450 ns | 40A | 30V | 900V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600W Tc | 900V | N-Channel | 25000pF @ 25V | 3.75 V | 180m Ω @ 20A, 10V | 4.5V @ 150μA | 40A Tc | 826nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IRF6635 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | DirectFET™ Isometric MX | 3 | EAR99 | e4 | Silver/Nickel (Ag/Ni) | YES | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-XBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.8W Ta 89W Tc | 32A | 250A | 0.0018Ohm | 200 mJ | N-Channel | 5970pF @ 15V | 1.8m Ω @ 32A, 10V | 2.35V @ 250μA | 32A Ta 180A Tc | 71nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8008-H(TE12L,Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpca8008hte12lq-datasheets-9781.pdf | 250V | 4A | 8-PowerVDFN | Lead Free | 8 | 8-SOP Advance (5x5) | 600pF | 8ns | 4A | 250V | 1.6W Ta 45W Tc | N-Channel | 600pF @ 10V | 580mOhm @ 2A, 10V | 4V @ 1mA | 4A Ta | 10nC @ 10V | 580 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6635TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | 30V | 32A | DirectFET™ Isometric MX | Lead Free | No SVHC | 7 | 2.8W | DIRECTFET™ MX | 5.97nF | 13ns | 25A | 30V | 1.8V | 2.8W Ta 89W Tc | 30V | N-Channel | 5970pF @ 15V | 1.8mOhm @ 32A, 10V | 2.35V @ 250μA | 32A Ta 180A Tc | 71nC @ 4.5V | 1.8 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STY30NK90Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sty30nk90z-datasheets-9788.pdf | 900V | 26A | TO-247-3 | Lead Free | 3 | No SVHC | 247 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | STY30N | 3 | Single | NOT SPECIFIED | 450W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 59ns | 72 ns | 250 ns | 26A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 450W Tc | 0.26Ohm | 500 mJ | 900V | N-Channel | 12000pF @ 25V | 260m Ω @ 14A, 10V | 4.5V @ 150μA | 26A Tc | 490nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| TPCA8007-H(TE12L,Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | -55°C | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpca8007hte12lq-datasheets-9789.pdf | SOP | 8 | 45W | 450W | 1nF | 94ns | 80 ns | 100 ns | 20A | 20V | 100V | 47mOhm | 100V | 47 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STE30NK90Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Chassis Mount, Screw | Chassis Mount | -65°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-ste30nk90z-datasheets-9791.pdf | 900V | 30A | ISOTOP | 38.2mm | 9.1mm | 25.5mm | Lead Free | 4 | 260mOhm | 4 | EAR99 | HIGH VOLTAGE | No | Nickel (Ni) | UPPER | UNSPECIFIED | STE30 | 4 | Single | 500W | 1 | FET General Purpose Power | 67 ns | 59ns | 72 ns | 250 ns | 14A | 30V | SILICON | ISOLATED | SWITCHING | 500W Tc | 28A | 500 mJ | 900V | N-Channel | 12000pF @ 25V | 260m Ω @ 14A, 10V | 4.5V @ 150μA | 28A Tc | 490nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| RK7002AT116 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/rohmsemiconductor-rk7002at116-datasheets-9712.pdf | 60V | 300mA | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 950μm | 1.3mm | Lead Free | 3 | 1.5Ohm | 3 | yes | EAR99 | No | e1 | TIN SILVER COPPER | DUAL | GULL WING | 260 | 3 | Single | 10 | 200mW | 1 | FET General Purpose Power | 6 ns | 5ns | 5 ns | 13 ns | 300mA | 20V | SILICON | SWITCHING | 2.5V | 200mW Ta | 60V | N-Channel | 33pF @ 10V | 1 Ω @ 300mA, 10V | 2.5V @ 1mA | 300mA Ta | 6nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF7807ZPBF | Infineon Technologies | $0.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7807ztr-datasheets-6474.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 11A | 0.0138Ohm | N-Channel | 770pF @ 15V | 13.8m Ω @ 11A, 10V | 2.25V @ 250μA | 11A Ta | 11nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| RSS090N03FU6TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-rss090n03fu6tb-datasheets-9687.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 17 Weeks | No SVHC | 15mOhm | 8 | EAR99 | No | 2W | FET General Purpose Power | 10 ns | 13ns | 15 ns | 46 ns | 9A | 20V | 30V | Single | 2.5V | 2W Ta | 9A | 30V | N-Channel | 810pF @ 10V | 2.5 V | 15m Ω @ 9A, 10V | 2.5V @ 1mA | 9A Ta | 15nC @ 5V | 4V 10V |
