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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Lead Length | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Row Spacing | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRLR3717PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlr3717trrpbf-datasheets-9384.pdf | 20V | 120A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.26mm | 6.22mm | Lead Free | 2 | 15 Weeks | No SVHC | 4MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 89W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 14ns | 16 ns | 5.8 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 2V | 89W Tc | TO-252AA | 33 ns | 460A | 460 mJ | 20V | N-Channel | 2830pF @ 10V | 4m Ω @ 15A, 10V | 2.45V @ 250μA | 120A Tc | 31nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| IRFU4104PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | /files/infineontechnologies-irfr4104trpbf-datasheets-7029.pdf | 40V | 119A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | No SVHC | 3 | 2.28mm | No | 9.65mm | Single | 140W | 17 ns | 69ns | 36 ns | 37 ns | 119A | 20V | 40V | 4V | 140W Tc | 42 ns | 40V | N-Channel | 2950pF @ 25V | 4 V | 5.5m Ω @ 42A, 10V | 4V @ 250μA | 42A Tc | 89nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF6636TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6636-datasheets-9888.pdf | DirectFET™ Isometric ST | 20V | 2.2W Ta 42W Tc | N-Channel | 2420pF @ 10V | 4.5m Ω @ 18A, 10V | 2.45V @ 250μA | 18A Ta 81A Tc | 27nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU3709ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irfr3709ztrrpbf-datasheets-4051.pdf | 30V | 86A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 2.39mm | 9.78mm | Lead Free | 3 | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 79W | 1 | FET General Purpose Power | 12 ns | 12ns | 3.9 ns | 15 ns | 86A | 20V | SILICON | DRAIN | SWITCHING | 79W Tc | 0.0065Ohm | 30V | N-Channel | 2330pF @ 15V | 1.8 V | 6.5m Ω @ 15A, 10V | 2.25V @ 250μA | 86A Tc | 26nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFU15N20DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | 200V | 17A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | No | Single | 140W | 1 | 9.7 ns | 32ns | 8.9 ns | 17 ns | 17A | 30V | 110W Tc | 200V | N-Channel | 910pF @ 25V | 165m Ω @ 10A, 10V | 5.5V @ 250μA | 17A Tc | 41nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU3911PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfu3911pbf-datasheets-0146.pdf | 100V | 14A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | No SVHC | 115Ohm | 3 | 56W | IPAK (TO-251) | 740pF | 26 ns | 26ns | 25 ns | 14A | 100V | 100V | 4V | 56W Tc | N-Channel | 740pF @ 25V | 4 V | 115mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 32nC @ 10V | 115 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3505PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/infineontechnologies-irfr3505pbf-datasheets-0154.pdf | 55V | 71A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | No SVHC | 13mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 74ns | 54 ns | 43 ns | 71A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 140W Tc | TO-252AA | 280A | 55V | N-Channel | 2030pF @ 25V | 4 V | 13m Ω @ 30A, 10V | 4V @ 250μA | 30A Tc | 93nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IRFU3711ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irfr3711ztrpbf-datasheets-1493.pdf | 20V | 93A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | 3 | No SVHC | 3 | EAR99 | No | Single | 79W | 1 | 12 ns | 13ns | 5.2 ns | 15 ns | 93A | 20V | SILICON | DRAIN | SWITCHING | 2V | 79W Tc | 28 ns | 0.0057Ohm | 140 mJ | 20V | N-Channel | 2160pF @ 10V | 2 V | 5.7m Ω @ 15A, 10V | 2.45V @ 250μA | 93A Tc | 27nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF1405ZSTRL-7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 230W Tc | 120A | 590A | 0.0049Ohm | 810 mJ | N-Channel | 5360pF @ 25V | 4.9m Ω @ 88A, 10V | 4V @ 150μA | 120A Tc | 230nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF7484PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7484pbf-datasheets-0174.pdf | 40V | 14A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | No | 2.5W | 1 | 8-SO | 3.52nF | 5ns | 58 ns | 180 ns | 14A | 8V | 40V | 2.5W Ta | 10MOhm | 40V | N-Channel | 3520pF @ 25V | 10mOhm @ 14A, 7V | 2V @ 250μA | 14A Ta | 100nC @ 7V | 10 mΩ | 7V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR48ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr48ztrpbf-datasheets-9197.pdf | 55V | 62A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10.3886mm | 2.3876mm | 6.73mm | Lead Free | 15 Weeks | No SVHC | 11MOhm | 3 | EAR99 | No | Single | 91W | 1 | 15 ns | 61ns | 35 ns | 40 ns | 42A | 20V | 55V | 4V | 91W Tc | 40 ns | 55V | N-Channel | 1720pF @ 25V | 4 V | 11m Ω @ 37A, 10V | 4V @ 50μA | 42A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF3704ZSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irf3704zlpbf-datasheets-9967.pdf | 20V | 67A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | No SVHC | 7.9MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 57W | 1 | FET General Purpose Power | R-PSSO-G2 | 8.9 ns | 38ns | 4.2 ns | 11 ns | 67A | 20V | SILICON | DRAIN | SWITCHING | 57W Tc | 17 ns | 42A | 260A | 20V | N-Channel | 1220pF @ 10V | 2.1 V | 7.9m Ω @ 21A, 10V | 2.55V @ 250μA | 67A Tc | 13nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF6611 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6611tr1-datasheets-9913.pdf | DirectFET™ Isometric MX | 3 | EAR99 | YES | BOTTOM | NO LEAD | 260 | 40 | 1 | Not Qualified | R-XBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.9W Ta 89W Tc | 32A | 220A | 0.0026Ohm | 310 mJ | N-Channel | 4860pF @ 15V | 2.6m Ω @ 27A, 10V | 2.25V @ 250μA | 32A Ta 150A Tc | 56nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3105PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irlr3105pbf-datasheets-9958.pdf | 55V | 25A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.223mm | Lead Free | 2 | No SVHC | 37mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 57W | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 57ns | 37 ns | 25 ns | 25A | 16V | 55V | SILICON | DRAIN | SWITCHING | 3V | 57W Tc | TO-252AA | 55V | N-Channel | 710pF @ 25V | 3 V | 37m Ω @ 15A, 10V | 3V @ 250μA | 25A Tc | 20nC @ 5V | 5V 10V | ±16V | |||||||||||||||||||||||||||||||
| IRF3704ZLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3704zlpbf-datasheets-9967.pdf | 20V | 67A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | No | Single | 57W | 1 | TO-262 | 1.22nF | 8.9 ns | 38ns | 4.2 ns | 11 ns | 67A | 20V | 20V | 57W Tc | 11.1mOhm | 20V | N-Channel | 1220pF @ 10V | 7.9mOhm @ 21A, 10V | 2.55V @ 250μA | 67A Tc | 13nC @ 4.5V | 7.9 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFU3704ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | /files/infineontechnologies-irfr3704zpbf-datasheets-9266.pdf | TO-251-3 Short Leads, IPak, TO-251AA | compliant | NOT SPECIFIED | NOT SPECIFIED | 20V | 48W Tc | N-Channel | 1190pF @ 10V | 8.4m Ω @ 15A, 10V | 2.55V @ 250μA | 60A Tc | 14nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7475PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7475pbf-datasheets-9983.pdf | 12V | 11A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 15MOhm | 8 | No | 2.5W | 1 | 8-SO | 1.59nF | 7.5 ns | 33ns | 7.5 ns | 13 ns | 11A | 12V | 12V | 2.5W Ta | 15mOhm | 12V | N-Channel | 1590pF @ 6V | 15mOhm @ 8.8A, 4.5V | 2V @ 250μA | 11A Ta | 19nC @ 4.5V | 15 mΩ | 2.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| IRLR7811WPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | TO-252-3, DPak (2 Leads + Tab), SC-63 | EAR99 | compliant | YES | FET General Purpose Power | Single | 30V | 71W Tc | 64A | N-Channel | 2260pF @ 15V | 10.5m Ω @ 15A, 10V | 2.5V @ 250μA | 64A Tc | 31nC @ 4.5V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU7807ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr7807ztrpbf-datasheets-4921.pdf | 30V | 43A | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.1mm | 2.3mm | Lead Free | No SVHC | 3 | No | 40W | I-PAK | 780pF | 7.1 ns | 28ns | 3.5 ns | 9.8 ns | 43A | 20V | 30V | 1.8V | 40W Tc | 35 ns | 18.2mOhm | 30V | N-Channel | 780pF @ 15V | 1.8 V | 13.8mOhm @ 15A, 10V | 2.25V @ 250μA | 43A Tc | 11nC @ 4.5V | 13.8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF7490PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7490trpbf-datasheets-8647.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 2.5W Ta | MS-012AA | 5.4A | 43A | 0.039Ohm | 91 mJ | N-Channel | 1720pF @ 25V | 39m Ω @ 3.2A, 10V | 4V @ 250μA | 5.4A Ta | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRLU3715ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3715zpbf-datasheets-7431.pdf | 20V | 49A | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.1mm | 2.3mm | Lead Free | No SVHC | 3 | No | 40W | 7.8 ns | 13ns | 4.3 ns | 10 ns | 49A | 20V | 20V | 2.1V | 40W Tc | 17 ns | 20V | N-Channel | 810pF @ 10V | 2.1 V | 11m Ω @ 15A, 10V | 2.55V @ 250μA | 49A Tc | 11nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF634NLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf634nlpbf-datasheets-0021.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | 2.387001g | 1 | Single | I2PAK | 620pF | 8.4 ns | 16ns | 15 ns | 28 ns | 8A | 20V | 250V | 3.8W Ta 88W Tc | 435mOhm | N-Channel | 620pF @ 25V | 435mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 34nC @ 10V | 435 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU3707ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | /files/infineontechnologies-irfr3707ztrpbf-datasheets-9379.pdf | 30V | 56A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | No SVHC | 3 | No | Single | 50W | IPAK (TO-251) | 1.15nF | 8 ns | 11ns | 3.3 ns | 12 ns | 56A | 20V | 30V | 4V | 50W Tc | 12.5mOhm | 30V | N-Channel | 1150pF @ 15V | 4 V | 9.5mOhm @ 15A, 10V | 2.25V @ 25μA | 56A Tc | 14nC @ 4.5V | 9.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF7828PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7828pbf-datasheets-0036.pdf | 30V | 13.6A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 4.05mm | Lead Free | No SVHC | 8 | No | 2.5W | 1 | 8-SO | 1.01nF | 6.3 ns | 2.7ns | 7.3 ns | 9.7 ns | 13.6A | 20V | 30V | 30V | 6.3 mm | 1V | 2.5W Ta | 12.5mOhm | 30V | N-Channel | 1010pF @ 15V | 1 V | 12.5mOhm @ 10A, 4.5V | 1V @ 250μA | 13.6A Ta | 14nC @ 5V | 12.5 mΩ | 4.5V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF634NPBF | Vishay Siliconix | $7.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf634nlpbf-datasheets-0021.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 3 | 1 | Single | TO-220AB | 620pF | 8.4 ns | 16ns | 15 ns | 28 ns | 8A | 20V | 250V | 3.8W Ta 88W Tc | 435mOhm | N-Channel | 620pF @ 25V | 435mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 34nC @ 10V | 435 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6626TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6626tr1-datasheets-0045.pdf | 30V | 16A | DirectFET™ Isometric ST | Lead Free | No SVHC | 7 | 2.2W | DIRECTFET™ ST | 2.38nF | 15ns | 4.5 ns | 17 ns | 16A | 20V | 30V | 30V | 2.35V | 2.2W Ta 42W Tc | 15 ns | 4mOhm | 30V | N-Channel | 2380pF @ 15V | 2.35 V | 5.4mOhm @ 16A, 10V | 2.35V @ 250μA | 16A Ta 72A Tc | 29nC @ 4.5V | 5.4 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFR3518PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2002 | /files/infineontechnologies-irfr3518trpbf-datasheets-0018.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | EAR99 | not_compliant | 80V | 110W Tc | N-Channel | 1710pF @ 25V | 29m Ω @ 18A, 10V | 4V @ 250μA | 38A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6678TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6678-datasheets-5360.pdf | 30V | 30A | DirectFET™ Isometric MX | Lead Free | No SVHC | 7 | 2.8W | DIRECTFET™ MX | 5.64nF | 71ns | 8.1 ns | 27 ns | 30A | 20V | 30V | 30V | 2.25V | 2.8W Ta 89W Tc | 43 ns | 1.7Ohm | 30V | N-Channel | 5640pF @ 15V | 2.25 V | 2.2mOhm @ 30A, 10V | 2.25V @ 250μA | 30A Ta 150A Tc | 65nC @ 4.5V | 2.2 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF2907ZS-7PPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-irf2907zs7ppbf-datasheets-9830.pdf | 75V | 160A | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 10.3378mm | 4.5466mm | 10.05mm | Lead Free | 6 | No SVHC | 4.5MOhm | 7 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G6 | 21 ns | 90ns | 44 ns | 92 ns | 160A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | 35 ns | 53 ns | 75V | N-Channel | 7580pF @ 25V | 4 V | 3.8m Ω @ 110A, 10V | 4V @ 250μA | 160A Tc | 260nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| TPCA8016-H(TE12LQM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Digi-Reel® | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpca8016hte12lqm-datasheets-9839.pdf | 8-PowerVDFN | 8 | 45W | 45W | 1 | 8-SOP Advance (5x5) | 1.375nF | 4ns | 3 ns | 25A | 20V | 60V | 21mOhm | 60V | N-Channel | 1375pF @ 10V | 21mOhm @ 13A, 10V | 2.3V @ 1mA | 25A Ta | 22nC @ 10V | 21 mΩ |
