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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| RSS110N03TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rss110n03tb-datasheets-9759.pdf | 30V | 11A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | e2 | TIN COPPER | DUAL | GULL WING | 260 | 8 | 10 | 1 | FET General Purpose Power | Not Qualified | 17ns | 11A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2W Ta | 44A | 0.0157Ohm | N-Channel | 1300pF @ 10V | 10.7m Ω @ 11A, 10V | 2.5V @ 1mA | 11A Ta | 17nC @ 5V | 4V 10V | 20V | |||||||||||||||||||||||||||||||||||||
| RSS125N03TB | ROHM Semiconductor | $6.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rss125n03tb-datasheets-9761.pdf | 30V | 12.5A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | e2 | TIN COPPER | DUAL | GULL WING | 260 | 8 | 10 | 1 | FET General Purpose Power | Not Qualified | 17ns | 12.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2W Ta | 50A | 0.0131Ohm | N-Channel | 1670pF @ 10V | 8.9m Ω @ 12.5A, 10V | 2.5V @ 1mA | 12.5A Ta | 28nC @ 5V | 4V 10V | 20V | ||||||||||||||||||||||||||||||||||||
| HAT2096H-EL-E | Renesas Electronics America | $0.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-hat2096hele-datasheets-9766.pdf | 30V | 40A | SC-100, SOT-669 | Lead Free | 4 | 16 Weeks | 5 | yes | EAR99 | No | SINGLE | GULL WING | 260 | 5 | 20 | 1 | FET General Purpose Power | R-PSSO-G4 | 20 ns | 49ns | 15 ns | 62 ns | 40A | 14V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20W Tc | 160A | 0.01Ohm | N-Channel | 2200pF @ 10V | 5.3m Ω @ 20A, 10V | 40A Ta | 40nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| RDN100N20 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rdn100n20-datasheets-9685.pdf | 200V | 10A | TO-220-3 Full Pack | Lead Free | 3 | 3 | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 260 | 3 | 10 | 1 | FET General Purpose Power | 13 ns | 29ns | 26 ns | 38 ns | 10A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 35W Tc | TO-220AB | 40A | 120 mJ | N-Channel | 543pF @ 10V | 360m Ω @ 5A, 10V | 4V @ 1mA | 10A Ta | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IRF7410PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7410trpbf-datasheets-7668.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | EAR99 | ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | 2.5W Ta | MS-012AA | 16A | 65A | 0.007Ohm | P-Channel | 8676pF @ 10V | 7m Ω @ 16A, 4.5V | 900mV @ 250μA | 16A Ta | 91nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| IRFR2607Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | e0 | TIN LEAD | YES | SINGLE | GULL WING | 245 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 110W Tc | TO-252AA | 42A | 180A | 0.022Ohm | 96 mJ | N-Channel | 1440pF @ 25V | 22m Ω @ 30A, 10V | 4V @ 50μA | 42A Tc | 51nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| RSS105N03TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rss105n03tb-datasheets-9693.pdf | 30V | 10.5A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | yes | unknown | FET General Purpose Power | 10.5A | Single | 2W Ta | N-Channel | 1130pF @ 10V | 11.7m Ω @ 10.5A, 10V | 2.5V @ 1mA | 10.5A Ta | 15nC @ 5V | 4V 10V | 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD15N06T4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd15n06001-datasheets-9247.pdf | 60V | 15A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 3 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | 240 | 3 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 25ns | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.5W Ta 48W Tj | 45A | 0.09Ohm | 61 mJ | N-Channel | 450pF @ 25V | 90m Ω @ 7.5A, 10V | 4V @ 250μA | 15A Ta | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| RK7002AT116 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/rohmsemiconductor-rk7002at116-datasheets-9712.pdf | 60V | 300mA | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 950μm | 1.3mm | Lead Free | 3 | 1.5Ohm | 3 | yes | EAR99 | No | e1 | TIN SILVER COPPER | DUAL | GULL WING | 260 | 3 | Single | 10 | 200mW | 1 | FET General Purpose Power | 6 ns | 5ns | 5 ns | 13 ns | 300mA | 20V | SILICON | SWITCHING | 2.5V | 200mW Ta | 60V | N-Channel | 33pF @ 10V | 1 Ω @ 300mA, 10V | 2.5V @ 1mA | 300mA Ta | 6nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||
| IRF7807ZPBF | Infineon Technologies | $0.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7807ztr-datasheets-6474.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 11A | 0.0138Ohm | N-Channel | 770pF @ 15V | 13.8m Ω @ 11A, 10V | 2.25V @ 250μA | 11A Ta | 11nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| RSS090N03FU6TB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/rohmsemiconductor-rss090n03fu6tb-datasheets-9687.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 17 Weeks | No SVHC | 15mOhm | 8 | EAR99 | No | 2W | FET General Purpose Power | 10 ns | 13ns | 15 ns | 46 ns | 9A | 20V | 30V | Single | 2.5V | 2W Ta | 9A | 30V | N-Channel | 810pF @ 10V | 2.5 V | 15m Ω @ 9A, 10V | 2.5V @ 1mA | 9A Ta | 15nC @ 5V | 4V 10V | ||||||||||||||||||||||||||||||||||||||||
| RSS090P03TB | ROHM Semiconductor | $0.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rss090p03tb-datasheets-9736.pdf | -30V | -9A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | No | e2 | TIN COPPER | DUAL | GULL WING | 260 | 8 | 10 | 1 | Other Transistors | 25 ns | 50ns | 80 ns | 150 ns | 9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 2W Ta | 9A | 36A | 0.014Ohm | P-Channel | 4000pF @ 10V | 14m Ω @ 9A, 10V | 2.5V @ 1mA | 9A Ta | 39nC @ 5V | 4V 10V | |||||||||||||||||||||||||||||||
| 2SK2715TL | ROHM Semiconductor | $8.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-2sk2715tl-datasheets-9642.pdf | 500V | 2A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3 | yes | No | e2 | TIN COPPER | GULL WING | 260 | 3 | Single | 10 | 20W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 12ns | 63 ns | 30 ns | 2A | 30V | SILICON | SWITCHING | 20W Tc | 2A | 6A | 4Ohm | 500V | N-Channel | 280pF @ 10V | 4 Ω @ 1A, 10V | 4V @ 1mA | 2A Ta | 10V | ±30V | |||||||||||||||||||||||||||||||
| 2SK2095N | ROHM Semiconductor | $8.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-2sk2095n-datasheets-9652.pdf | 60V | 10A | TO-220-3 Full Pack | Lead Free | 3 | EAR99 | e1 | TIN SILVER COPPER | SINGLE | 260 | 3 | 10 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 80ns | 10A | SILICON | SINGLE | ISOLATED | SWITCHING | 30W Tc | TO-220AB | 40A | 0.14Ohm | N-Channel | 1600pF @ 10V | 95m Ω @ 5A, 10V | 2.5V @ 1mA | 10A Ta | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| 2SK2504TL | ROHM Semiconductor | $0.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-2sk2504tl-datasheets-9655.pdf | 100V | 5A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | No SVHC | 3 | yes | EAR99 | No | e2 | Tin/Copper (Sn98Cu2) | GULL WING | 260 | 3 | Single | 10 | 20W | 1 | FET General Purpose Power | R-PSSO-G2 | 5 ns | 20ns | 20 ns | 50 ns | 5A | 20V | 100V | SILICON | SWITCHING | 20W Tc | 5A | 20A | 0.28Ohm | 100V | N-Channel | 520pF @ 10V | 2.5 V | 220m Ω @ 2.5A, 10V | 2.5V @ 1mA | 5A Ta | 4V 10V | ±20V | ||||||||||||||||||||||||||
| NDS8426A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nds8426a-datasheets-9661.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 20V | 2.5W Ta | N-Channel | 2150pF @ 10V | 13.5mOhm @ 10.5A, 4.5V | 1V @ 250μA | 10.5A Ta | 60nC @ 4.5V | 2.7V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU3705Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3705z-datasheets-9607.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 130W Tc | 42A | 360A | 0.008Ohm | 190 mJ | N-Channel | 2900pF @ 25V | 8m Ω @ 42A, 10V | 3V @ 250μA | 42A Tc | 66nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| IRF6613TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6613tr1-datasheets-9615.pdf | DirectFET™ Isometric MT | 40V | 2.8W Ta 89W Tc | N-Channel | 5950pF @ 15V | 3.4m Ω @ 23A, 10V | 2.25V @ 250μA | 23A Ta 150A Tc | 63nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NIF9N05CLT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nif9n05clt3g-datasheets-7799.pdf | 52V | 2.6A | TO-261-4, TO-261AA | Contains Lead | 4 | 4 | OBSOLETE (Last Updated: 4 days ago) | no | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | 240 | 4 | 30 | 1.69W | 1 | FET General Purpose Power | Not Qualified | 290ns | 290 ns | 1.54 μs | 2.6A | 15V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 1.69W Ta | 10A | 0.125Ohm | 110 mJ | 52V | N-Channel | 250pF @ 35V | 125m Ω @ 2.6A, 10V | 2.5V @ 100μA | 2.6A Ta | 7nC @ 4.5V | 3V 10V | ±15V | |||||||||||||||||||||||||||
| IRF3305 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-220-3 | 3 | EAR99 | AVALANCHE RATED | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 330W Tc | TO-220AB | 75A | 560A | 0.008Ohm | 470 mJ | N-Channel | 3650pF @ 25V | 8m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| RDN120N25 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rdn120n25-datasheets-9622.pdf | 250V | 12A | TO-220-3 Full Pack | Lead Free | 3 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 260 | 3 | 10 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 12A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 40W Tc | TO-220AB | 48A | 0.21Ohm | 216 mJ | N-Channel | 1224pF @ 10V | 210m Ω @ 6A, 10V | 4V @ 1mA | 12A Ta | 62nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| MTB75N05HDT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mtb75n05hdt4-datasheets-9624.pdf | 50V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | AVALANCHE RATED | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | 170ns | 75A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 125W Tc | 225A | 0.0095Ohm | 500 mJ | N-Channel | 3900pF @ 25V | 9.5m Ω @ 20A, 10V | 4V @ 250μA | 75A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| 2SK2299N | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-2sk2299n-datasheets-9626.pdf | 450V | 7A | TO-220-3 Full Pack | Lead Free | 3 | e1 | TIN SILVER COPPER | SINGLE | 260 | 3 | 10 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 18ns | 7A | SILICON | SINGLE | ISOLATED | SWITCHING | 30W Tc | TO-220AB | 7A | 28A | N-Channel | 870pF @ 10V | 1.1 Ω @ 4A, 10V | 4V @ 1mA | 7A Ta | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRF7832TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7832tr-datasheets-9081.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | MS-012AA | 20A | 160A | 0.004Ohm | 260 mJ | N-Channel | 4310pF @ 15V | 4m Ω @ 20A, 10V | 2.32V @ 250μA | 20A Ta | 51nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||||||
| IRFU1010Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | TO-251-3 Short Leads, IPak, TO-251AA | 55V | 140W Tc | N-Channel | 2840pF @ 25V | 7.5m Ω @ 42A, 10V | 4V @ 100μA | 42A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2713 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-2sk2713-datasheets-9638.pdf | 450V | 5A | TO-220-3 Full Pack | Lead Free | 3 | e1 | TIN SILVER COPPER | SINGLE | 260 | 3 | 10 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 17ns | 5A | SILICON | SINGLE | ISOLATED | SWITCHING | 30W Tc | TO-220AB | 5A | 20A | N-Channel | 600pF @ 10V | 1.4 Ω @ 2.5A, 10V | 4V @ 1mA | 5A Ta | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| RK3055ETL | ROHM Semiconductor | $0.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rk3055etl-datasheets-9640.pdf | 60V | 8A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | No SVHC | 3 | yes | EAR99 | not_compliant | e2 | Tin/Copper (Sn98Cu2) | GULL WING | 260 | 3 | Single | 10 | 20W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 20ns | 20 ns | 50 ns | 8A | 20V | 60V | SILICON | SWITCHING | 20W Tc | 8A | 20A | 0.15Ohm | 60V | N-Channel | 520pF @ 10V | 2.5 V | 150m Ω @ 4A, 10V | 2.5V @ 1mA | 8A Ta | 10V | ±20V | ||||||||||||||||||||||||||
| IRF3805 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | TO-220-3 | 3 | EAR99 | FAST SWITCHING | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 330W Tc | TO-220AB | 220A | 890A | 0.0033Ohm | 730 mJ | N-Channel | 7960pF @ 25V | 3.3m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 290nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| 2SK354700L | Panasonic Electronic Components | $14.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-2sk354700l-datasheets-9512.pdf | 50V | 100mA | SOT-723 | Lead Free | SSSMini3-F1 | 12pF | 100mA | 50V | 100mW Ta | N-Channel | 12pF @ 3V | 12Ohm @ 10mA, 4V | 1.5V @ 1μA | 100mA Ta | 12 Ω | 2.5V 4V | ±7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL3507 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2006 | TO-262-3 Long Leads, I2Pak, TO-262AA | 75V | 190W Tc | N-Channel | 3540pF @ 50V | 8.8m Ω @ 58A, 10V | 4V @ 100μA | 97A Tc | 130nC @ 10V | 10V | ±20V |
