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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NTHS4501NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nths4501nt1g-datasheets-9434.pdf | 30V | 4.9A | 8-SMD, Flat Lead | Lead Free | 8 | 8 | LAST SHIPMENTS (Last Updated: 16 hours ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | DUAL | C BEND | 260 | 8 | 40 | 1.3W | 1 | Not Qualified | 11ns | 11 ns | 17 ns | 6.7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.3W Ta | 30V | N-Channel | 462pF @ 24V | 38m Ω @ 4.9A, 10V | 2V @ 250μA | 4.9A Ta | 9.1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFSL3207 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 330W Tc | 120A | 670A | 0.0041Ohm | 170 mJ | N-Channel | 7600pF @ 50V | 4.5m Ω @ 75A, 10V | 4V @ 250μA | 180A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB4410 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | TO-220-3 | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 250W Tc | TO-220AB | 75A | 380A | 0.01Ohm | 220 mJ | N-Channel | 5150pF @ 50V | 10m Ω @ 58A, 10V | 4V @ 150μA | 96A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7495PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf7495trpbf-datasheets-0194.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 2.5W Ta | MS-012AA | 7.3A | 58A | 0.022Ohm | 180 mJ | N-Channel | 1530pF @ 25V | 22m Ω @ 4.4A, 10V | 4V @ 250μA | 7.3A Ta | 51nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRLR3705Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3705z-datasheets-9607.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | e0 | TIN LEAD | YES | SINGLE | GULL WING | 245 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 130W Tc | TO-252AA | 42A | 360A | 0.008Ohm | 110 mJ | N-Channel | 2900pF @ 25V | 8m Ω @ 42A, 10V | 3V @ 250μA | 42A Tc | 66nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFSL3307 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | e3 | MATTE TIN OVER NICKEL | NO | SINGLE | 260 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 250W Tc | 75A | 510A | 0.0063Ohm | 270 mJ | N-Channel | 5150pF @ 50V | 6.3m Ω @ 75A, 10V | 4V @ 150μA | 130A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS4610PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/infineontechnologies-irfs4610trlpbf-datasheets-5741.pdf | 100V | 73A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | No SVHC | 14mOhm | 3 | No | GULL WING | Single | 190W | 1 | R-PSSO-G2 | 18 ns | 87ns | 70 ns | 53 ns | 73A | 20V | 100V | SILICON | DRAIN | SWITCHING | 190W Tc | 53 ns | 290A | 100V | N-Channel | 3550pF @ 50V | 4 V | 14m Ω @ 44A, 10V | 4V @ 100μA | 73A Tc | 140nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF3805S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 330W Tc | 75A | 890A | 0.0033Ohm | 940 mJ | N-Channel | 7960pF @ 25V | 3.3m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 290nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFS4610 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 190W Tc | 73A | 290A | 0.014Ohm | 370 mJ | N-Channel | 3550pF @ 50V | 14m Ω @ 44A, 10V | 4V @ 100μA | 73A Tc | 140nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR2307Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr2307z-datasheets-9551.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | e0 | TIN LEAD | YES | SINGLE | GULL WING | 245 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 110W Tc | TO-252AA | 42A | 210A | 0.016Ohm | 100 mJ | N-Channel | 2190pF @ 25V | 16m Ω @ 32A, 10V | 4V @ 100μA | 42A Tc | 75nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF1405ZS-7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e0 | TIN LEAD | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 230W Tc | 120A | 590A | 0.0049Ohm | 810 mJ | N-Channel | 5360pF @ 25V | 4.9m Ω @ 88A, 10V | 4V @ 150μA | 120A Tc | 230nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF3707ZCSTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | YES | FET General Purpose Power | Single | 30V | 57W Tc | 59A | N-Channel | 1210pF @ 15V | 9.5m Ω @ 21A, 10V | 2.25V @ 250μA | 59A Tc | 15nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS3507 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 190W Tc | 75A | 390A | 0.0088Ohm | 280 mJ | N-Channel | 3540pF @ 50V | 8.8m Ω @ 58A, 10V | 4V @ 100μA | 97A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFB3307 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-220-3 | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 250W Tc | TO-220AB | 75A | 510A | 0.0063Ohm | 270 mJ | N-Channel | 5150pF @ 50V | 6.3m Ω @ 75A, 10V | 4V @ 150μA | 130A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP4232PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -40°C~175°C TJ | Bulk | 1 (Unlimited) | Through Hole | 175°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | /files/infineon-irfp4232pbf-datasheets-0340.pdf | 250V | 60A | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Lead Free | No SVHC | 35.7MOhm | 3 | No | Single | 430W | 1 | TO-247AC | 7.29nF | 37 ns | 64 ns | 60A | 30V | 250V | 250V | 5V | 430W Tc | 35.7mOhm | 250V | N-Channel | 7290pF @ 25V | 5 V | 35.7mOhm @ 42A, 10V | 5V @ 250μA | 60A Tc | 240nC @ 10V | 35.7 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFB4610 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-220-3 | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 190W Tc | TO-220AB | 73A | 290A | 0.014Ohm | 370 mJ | N-Channel | 3550pF @ 50V | 14m Ω @ 44A, 10V | 4V @ 100μA | 73A Tc | 140nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB3507 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2006 | TO-220-3 | 75V | 190W Tc | N-Channel | 3540pF @ 50V | 8.8m Ω @ 58A, 10V | 4V @ 100μA | 97A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR1010Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | e0 | TIN LEAD | YES | SINGLE | GULL WING | 245 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 140W Tc | TO-252AA | 42A | 360A | 0.0075Ohm | 110 mJ | N-Channel | 2840pF @ 25V | 7.5m Ω @ 42A, 10V | 4V @ 100μA | 42A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL4410 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 250W Tc | 97A | 390A | 0.009Ohm | 242 mJ | N-Channel | 5150pF @ 50V | 10m Ω @ 58A, 10V | 4V @ 150μA | 96A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL4610 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 190W Tc | 73A | 290A | 0.014Ohm | 370 mJ | N-Channel | 3550pF @ 50V | 14m Ω @ 44A, 10V | 4V @ 100μA | 73A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL4610PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfs4610trlpbf-datasheets-5741.pdf | 100V | 73A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 3 | No | SINGLE | 190W | 1 | 18 ns | 87ns | 70 ns | 3 ns | 73A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 190W Tc | 290A | 100V | N-Channel | 3550pF @ 50V | 14m Ω @ 44A, 10V | 4V @ 100μA | 73A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRL1404ZSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 230W Tc | 75A | 790A | 0.0031Ohm | 220 mJ | N-Channel | 5080pF @ 25V | 3.1m Ω @ 75A, 10V | 2.7V @ 250μA | 75A Tc | 110nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFR120ZTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 35W Tc | TO-252AA | 8.7A | 35A | 0.19Ohm | 20 mJ | N-Channel | 310pF @ 25V | 190m Ω @ 5.2A, 10V | 4V @ 250μA | 8.7A Tc | 10nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| NTP45N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp45n06g-datasheets-8152.pdf | 60V | 45A | TO-220-3 | Contains Lead | 3 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | 240 | 3 | Single | 30 | 125W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 101ns | 106 ns | 33 ns | 45A | 20V | SILICON | DRAIN | SWITCHING | 2.4W Ta 125W Tj | TO-220AB | 150A | 0.026Ohm | 240 mJ | 60V | N-Channel | 1725pF @ 25V | 26m Ω @ 22.5A, 10V | 4V @ 250μA | 45A Ta | 46nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| ZVN4424ZTA | Diodes Incorporated | $0.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-zvn4424zta-datasheets-9400.pdf | 240V | 500mA | TO-243AA | 4.6mm | 1.6mm | 2.6mm | Lead Free | 130.492855mg | No SVHC | 4.3Ohm | 4 | No | 1 | Single | 1W | 1 | SOT-89-3 | 200pF | 2.5 ns | 5ns | 16 ns | 40 ns | 300mA | 40V | 240V | 1W Ta | 6Ohm | 240V | N-Channel | 200pF @ 25V | 5.5Ohm @ 500mA, 10V | 1.8V @ 1mA | 300mA Ta | 5.5 Ω | 2.5V 10V | ±40V | ||||||||||||||||||||||||||||||||||||||||||
| NTTD4401FR2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nttd4401fr2-datasheets-9451.pdf | -20V | -3.3A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | Lead Free | 8 | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | 240 | 8 | Single | 30 | 1.42W | 1 | Other Transistors | Not Qualified | 35ns | 35 ns | 33 ns | 2.4A | -10V | SILICON | SWITCHING | 20V | 780mW Ta | 0.09Ohm | 175 pF | -20V | P-Channel | 750pF @ 16V | 90m Ω @ 3.3A, 4.5V | 1.5V @ 250μA | 2.4A Ta | 18nC @ 4.5V | Schottky Diode (Isolated) | 2.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||
| IRFS3307 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e0 | TIN LEAD | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 250W Tc | 75A | 510A | 0.0063Ohm | 270 mJ | N-Channel | 5150pF @ 50V | 6.3m Ω @ 75A, 10V | 4V @ 150μA | 130A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB3507PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | 75V | 97A | TO-220-3 | Lead Free | 3 | No | 190W | 1 | TO-220AB | 3.54nF | 20 ns | 81ns | 49 ns | 52 ns | 97A | 20V | 75V | 190W Tc | 7mOhm | 75V | N-Channel | 3540pF @ 50V | 8.8mOhm @ 58A, 10V | 4V @ 100μA | 97A Tc | 130nC @ 10V | 8.8 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3546J0L | Panasonic Electronic Components | $12.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-2sk3546j0l-datasheets-9445.pdf | 50V | 100mA | SC-89, SOT-490 | Lead Free | SSMini3-F1 | 12pF | 100mA | 50V | 125mW Ta | N-Channel | 12pF @ 3V | 12Ohm @ 10mA, 4V | 1.5V @ 1μA | 100mA Ta | 12 Ω | 2.5V 4V | ±7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF540Z | Infineon Technologies | $0.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-220-3 | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 92W Tc | TO-220AB | 36A | 140A | 0.0265Ohm | 120 mJ | N-Channel | 1770pF @ 25V | 26.5m Ω @ 22A, 10V | 4V @ 250μA | 36A Tc | 63nC @ 10V | 10V | ±20V |
