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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDMS8660S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | /files/onsemiconductor-fdms8660s-datasheets-6821.pdf | 30V | 40A | 8-PowerTDFN | Lead Free | No SVHC | 8 | 83W | 1 | 12ns | 50 ns | 76 ns | 25A | 20V | 1.5V | 2.5W Ta 83W Tc | 30V | N-Channel | 4345pF @ 15V | 2.4m Ω @ 25A, 10V | 2V @ 250μA | 25A Ta 40A Tc | 113nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9535-55A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/nexperiausainc-buk953555a127-datasheets-6948.pdf | TO-220-3 | 10.3mm | 9.4mm | 4.5mm | 3 | 4.535924g | 3 | EAR99 | ESD PROTECTED | Tin | No | e3 | 3 | Single | 85W | 1 | FET General Purpose Power | 6 ns | 36ns | 73 ns | 96 ns | 260mA | 10V | 55V | SILICON | DRAIN | SWITCHING | 85W Tc | TO-220AB | 49 mJ | 55V | N-Channel | 1173pF @ 25V | 32m Ω @ 25A, 10V | 2V @ 1mA | 34A Tc | 4.5V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| IRF6662TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6662trpbf-datasheets-5082.pdf | 100V | 8.3A | DirectFET™ Isometric MZ | 5.45mm | 508μm | 5.05mm | Lead Free | No SVHC | 22MOhm | 5 | No | Single | 89W | 1 | DIRECTFET™ MZ | 1.36nF | 11 ns | 7.5ns | 5.9 ns | 24 ns | 6.6A | 20V | 100V | 100V | 3.9V | 2.8W Ta 89W Tc | 51 ns | 17.5mOhm | 100V | N-Channel | 1360pF @ 25V | 3.9 V | 22mOhm @ 8.2A, 10V | 4.9V @ 100μA | 8.3A Ta 47A Tc | 31nC @ 10V | 22 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDA16N50 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fda16n50-datasheets-6883.pdf | TO-3P-3, SC-65-3 | 3 | yes | AVALANCHE RATED | compliant | e3 | TIN | NO | SINGLE | 260 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 205W Tc | 16.5A | 66A | 0.38Ohm | 780 mJ | N-Channel | 1945pF @ 25V | 380m Ω @ 8.3A, 10V | 5V @ 250μA | 16.5A Tc | 45nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC052N03S G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc052n03sg-datasheets-6884.pdf | 8-PowerTDFN | 5 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | DUAL | FLAT | 260 | 8 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.8W Ta 54W Tc | 18A | 200A | 0.0082Ohm | 168 mJ | N-Channel | 2820pF @ 15V | 5.2m Ω @ 50A, 10V | 2V @ 40μA | 18A Ta 80A Tc | 22nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF6646TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | /files/infineontechnologies-irf6646trpbf-datasheets-5081.pdf | 80V | 12A | DirectFET™ Isometric MN | 6.35mm | 506μm | 5.05mm | Lead Free | No SVHC | 9.5MOhm | 5 | No | Single | 89W | 1 | DIRECTFET™ MN | 2.06nF | 17 ns | 20ns | 12 ns | 31 ns | 9.6A | 20V | 80V | 80V | 3V | 2.8W Ta 89W Tc | 54 ns | 7.6mOhm | 80V | N-Channel | 2060pF @ 25V | 3 V | 9.5mOhm @ 12A, 10V | 4.9V @ 150μA | 12A Ta 68A Tc | 50nC @ 10V | 9.5 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDD6670AS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdd6670as-datasheets-6902.pdf | 30V | 76A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 3 | Single | 70W | 1 | 12ns | 20 ns | 28 ns | 76A | 20V | 70W Ta | 30V | N-Channel | 1580pF @ 15V | 8m Ω @ 13.8A, 10V | 3V @ 1mA | 76A Ta | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC094N03S G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc094n03sg-datasheets-6903.pdf | 8-PowerTDFN | 5 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | 8541.29.00.95 | e3 | MATTE TIN | YES | DUAL | FLAT | 260 | 8 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.8W Ta 52W Tc | 14.6A | 140A | 0.0094Ohm | 90 mJ | N-Channel | 1800pF @ 15V | 9.4m Ω @ 35A, 10V | 2V @ 25μA | 14.6A Ta 35A Tc | 14nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| 2SK2221-E | Renesas Electronics America | $12.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-2sk2221e-datasheets-6906.pdf | 200V | 8A | TO-3P-3, SC-65-3 | Lead Free | 3 | 16 Weeks | 3 | yes | EAR99 | Copper, Tin | No | SINGLE | 4 | 1 | FET General Purpose Power | 8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | SWITCHING | 100W Tc | 8A | N-Channel | 600pF @ 10V | 8A Ta | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQU3N60CTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/onsemiconductor-fqu3n60ctu-datasheets-6909.pdf&product=onsemiconductor-fqu3n60ctu-6861238 | 600V | 2.4A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | No SVHC | 3 | ACTIVE (Last Updated: 19 hours ago) | yes | Single | 2.5W | 1 | 30ns | 30 ns | 20 ns | 2.4A | 30V | 4V | 50W Tc | 600V | N-Channel | 565pF @ 25V | 3.4 Ω @ 1.2A, 10V | 4V @ 250μA | 2.4A Tc | 14nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC032N03S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc032n03s-datasheets-6920.pdf | 30V | 50A | 8-PowerTDFN | Contains Lead | 8 | 8 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e0 | Tin/Lead (Sn/Pb) | DUAL | NO LEAD | 235 | 8 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.8W Ta 78W Tc | 23A | 200A | 0.0049Ohm | 550 mJ | N-Channel | 5080pF @ 15V | 3.2m Ω @ 50A, 10V | 2V @ 70μA | 23A Ta 100A Tc | 39nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF6612TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | 30V | 24A | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | Lead Free | No SVHC | 3.3MOhm | 5 | No | 89W | 1 | DIRECTFET™ MX | 3.97nF | 15 ns | 52ns | 4.8 ns | 21 ns | 19A | 20V | 30V | 2.8W Ta 89W Tc | 4.4mOhm | 30V | N-Channel | 3970pF @ 15V | 1.8 V | 3.3mOhm @ 24A, 10V | 2.25V @ 250μA | 24A Ta 136A Tc | 45nC @ 4.5V | 3.3 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSC072N025S G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc072n025sg-datasheets-6931.pdf | 8-PowerTDFN | 5 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | DUAL | FLAT | 260 | 8 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 2.8W Ta 60W Tc | 15A | 160A | 0.0072Ohm | 160 mJ | N-Channel | 2230pF @ 15V | 7.2m Ω @ 40A, 10V | 2V @ 30μA | 15A Ta 40A Tc | 18nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BSC022N03S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc022n03sg-datasheets-7866.pdf | 30V | 50A | 8-PowerTDFN | Contains Lead | 5 | 8 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e0 | Tin/Lead (Sn/Pb) | DUAL | NO LEAD | 235 | 8 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-N5 | 9.7 ns | 9ns | 7 ns | 42 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.8W Ta 104W Tc | 200A | 0.0033Ohm | N-Channel | 7490pF @ 15V | 2.2m Ω @ 50A, 10V | 2V @ 100μA | 28A Ta 100A Tc | 58nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF6678TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | 30V | 30A | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | Lead Free | No SVHC | 2.2MOhm | 5 | No | 89W | 1 | DIRECTFET™ MX | 5.64nF | 21 ns | 71ns | 8.1 ns | 27 ns | 24A | 20V | 30V | 30V | 1.35V | 2.8W Ta 89W Tc | 3mOhm | 30V | N-Channel | 5640pF @ 15V | 1.35 V | 2.2mOhm @ 30A, 10V | 2.25V @ 250μA | 30A Ta 150A Tc | 65nC @ 4.5V | 2.2 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF6691TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6691tr1pbf-datasheets-6646.pdf | 20V | 32A | DirectFET™ Isometric MT | 6.35mm | 506μm | 5.05mm | Lead Free | 5 | No | 2W | 1 | DIRECTFET™ MT | 6.58nF | 23 ns | 95ns | 10 ns | 25 ns | 32mA | 12V | 20V | 2.8W Ta 89W Tc | 2.5mOhm | 20V | N-Channel | 6580pF @ 10V | 1.8mOhm @ 15A, 10V | 2.5V @ 250μA | 32A Ta 180A Tc | 71nC @ 4.5V | 1.8 mΩ | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FCD4N60TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-fcd4n60tf-datasheets-6786.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | FCD4N60 | D-Pak | 600V | 50W Tc | N-Channel | 540pF @ 25V | 1.2Ohm @ 2A, 10V | 5V @ 250μA | 3.9A Tc | 16.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6645TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | /files/infineontechnologies-irf6645trpbf-datasheets-4597.pdf | 100V | 5.7A | DirectFET™ Isometric SJ | 4.826mm | 530μm | 3.95mm | Lead Free | No SVHC | 35MOhm | 5 | Copper, Silver, Tin | No | Single | 42W | 1 | DIRECTFET™ SJ | 890pF | 9.2 ns | 5ns | 5.1 ns | 18 ns | 4.5A | 20V | 100V | 100V | 3V | 2.2W Ta 42W Tc | 47 ns | 28mOhm | 100V | N-Channel | 890pF @ 25V | 3 V | 35mOhm @ 5.7A, 10V | 4.9V @ 50μA | 5.7A Ta 25A Tc | 20nC @ 10V | 35 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF6655TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irf6655trpbf-datasheets-6677.pdf | 100V | 4.2A | DirectFET™ Isometric SH | 4.826mm | 508μm | 3.9624mm | Lead Free | 2 | 13 Weeks | 5 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 42W | 1 | FET General Purpose Power | R-XBCC-N2 | 7.4 ns | 2.8ns | 4.3 ns | 14 ns | 4.2mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.2W Ta 42W Tc | 34A | 0.062Ohm | 11 mJ | 100V | N-Channel | 530pF @ 25V | 62m Ω @ 5A, 10V | 4.8V @ 25μA | 4.2A Ta 19A Tc | 11.7nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDD8580 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdd8580-datasheets-6749.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | 20V | 49.5W Tc | N-Channel | 1445pF @ 10V | 9mOhm @ 35A, 10V | 2.5V @ 250μA | 35A Tc | 27nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2231(TE16R1,NQ) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 60V | 5A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 3 | Silver, Tin | No | Single | 20W | 1 | PW-MOLD | 370pF | 55ns | 65 ns | 95 ns | 5A | 20V | 60V | 20W Tc | 160mOhm | 60V | N-Channel | 370pF @ 10V | 160mOhm @ 2.5A, 10V | 2V @ 1mA | 5A Ta | 12nC @ 10V | 160 mΩ | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDFS6N754 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-fdfs6n754-datasheets-6761.pdf | 30V | 4A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 230.4mg | No SVHC | 56mOhm | 8 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 2W | 1 | FET General Purpose Power | 6 ns | 8ns | 2 ns | 20 ns | 4A | 20V | 30V | SILICON | SWITCHING | 1.7V | 1.6W Ta | 4A | 20A | 30V | N-Channel | 299pF @ 15V | 1.7 V | 56m Ω @ 4A, 10V | 2.5V @ 250μA | 4A Ta | 6nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| 2SK1058-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/renesaselectronicsamerica-2sk1058e-datasheets-6768.pdf | 160V | 7A | TO-3P-3, SC-65-3 | 22.1mm | Lead Free | 3 | 16 Weeks | 3 | yes | EAR99 | Copper, Tin | No | PRSS0004ZE-A | SINGLE | 4 | 1 | 100W | 1 | FET General Purpose Power | 180 ns | 60 ns | 7A | 15V | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | SWITCHING | 100W Tc | 7A | 160V | N-Channel | 600pF @ 10V | 7A Ta | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6665TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/infineontechnologies-irf6665trpbf-datasheets-8849.pdf | 100V | 4.2A | DirectFET™ Isometric SH | 4.826mm | 506μm | 3.95mm | Lead Free | No SVHC | 62MOhm | 5 | No | Single | 42W | 1 | DIRECTFET™ SH | 530pF | 7.4 ns | 2.8ns | 4.3 ns | 14 ns | 3.4A | 20V | 100V | 100V | 3V | 2.2W Ta 42W Tc | 62mOhm | 100V | N-Channel | 530pF @ 25V | 3 V | 62mOhm @ 5A, 10V | 5V @ 250μA | 4.2A Ta 19A Tc | 13nC @ 10V | 62 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDP79N15 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdpf79n15-datasheets-5587.pdf | TO-220-3 | TO-220-3 | 150V | 463W Tc | N-Channel | 3410pF @ 25V | 30mOhm @ 39.5A, 10V | 5V @ 250μA | 79A Tc | 73nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMJ1027P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | -20V | -3.2A | 6-VDFN Exposed Pad | Lead Free | Single | 3.2A | 1.8V | 20V | -20V | P-Channel | 3.2A Ta | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6648TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6648trpbf-datasheets-9229.pdf | 60V | 86A | DirectFET™ Isometric MN | 6.35mm | 506μm | 5.05mm | Lead Free | 7MOhm | 5 | No | Single | 89W | 1 | DIRECTFET™ MN | 2.12nF | 16 ns | 29ns | 13 ns | 28 ns | 69A | 20V | 60V | 2.8W Ta 89W Tc | 47 ns | 7mOhm | 60V | N-Channel | 2120pF @ 25V | 7mOhm @ 17A, 10V | 4.9V @ 150μA | 86A Tc | 50nC @ 10V | 7 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFV22N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh22n50p-datasheets-1343.pdf | 500V | 22A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 350W | 1 | FET General Purpose Power | Not Qualified | 25ns | 21 ns | 72 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 350W Tc | 55A | 0.27Ohm | 750 mJ | 500V | N-Channel | 2630pF @ 25V | 270m Ω @ 11A, 10V | 5.5V @ 2.5mA | 22A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IRF6668TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6668trpbf-datasheets-3461.pdf | 80V | 55A | DirectFET™ Isometric MZ | 6.35mm | 533.4μm | 5.05mm | Lead Free | No SVHC | 15mOhm | 5 | No | Dual | 2.8W | 1 | DIRECTFET™ MZ | 1.32nF | 19 ns | 13ns | 23 ns | 7.1 ns | 44A | 20V | 80V | 80V | 4V | 2.8W Ta 89W Tc | 12mOhm | 80V | N-Channel | 1320pF @ 25V | 4 V | 15mOhm @ 12A, 10V | 4.9V @ 100μA | 55A Tc | 31nC @ 10V | 15 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF6644TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-irf6644trpbf-datasheets-0636.pdf | 100V | 10.3A | DirectFET™ Isometric MN | 6.35mm | 506μm | 5.05mm | Lead Free | 3 | No SVHC | 13MOhm | 5 | LOW CONDUCTION LOSS | No | BOTTOM | Single | 2.8W | 1 | R-XBCC-N3 | 17 ns | 26ns | 16 ns | 34 ns | 8.3A | 20V | 100V | SILICON | DRAIN | 2.8V | 2.8W Ta 89W Tc | 63 ns | 228A | 86 mJ | 100V | N-Channel | 2210pF @ 25V | 2.8 V | 13m Ω @ 10.3A, 10V | 4.8V @ 150μA | 10.3A Ta 60A Tc | 47nC @ 10V | 10V | ±20V |
