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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTA8N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/ixys-ixtp8n50p-datasheets-5784.pdf | 500V | 8A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 4 Weeks | 3 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 150W | 1 | R-PSSO-G2 | 28ns | 23 ns | 65 ns | 8A | 30V | SILICON | DRAIN | SWITCHING | 150W Tc | 8A | 0.8Ohm | 400 mJ | 500V | N-Channel | 1050pF @ 25V | 800m Ω @ 4A, 10V | 5.5V @ 100μA | 8A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| FDU8586 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdu8586-datasheets-6718.pdf | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 20V | 77W Tc | N-Channel | 2480pF @ 10V | 5.5mOhm @ 35A, 10V | 2.5V @ 250μA | 35A Tc | 48nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6636TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6636trpbf-datasheets-0298.pdf | 20V | 18A | DirectFET™ Isometric ST | 506μm | 3.95mm | Lead Free | No SVHC | 4.5MOhm | 3 | No | 42W | 1 | DIRECTFET™ ST | 2.42nF | 14 ns | 19ns | 6.2 ns | 16 ns | 15A | 20V | 20V | 2.2W Ta 42W Tc | 6.4mOhm | 20V | N-Channel | 2420pF @ 10V | 2.45 V | 4.5mOhm @ 18A, 10V | 2.45V @ 250μA | 18A Ta 81A Tc | 27nC @ 4.5V | 4.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF6631TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/infineontechnologies-irf6631trpbf-datasheets-6252.pdf | 30V | 13A | DirectFET™ Isometric SQ | 4.826mm | 506μm | Lead Free | No SVHC | 5 | No | 42W | DIRECTFET™ SQ | 1.45nF | 15 ns | 18ns | 4.9 ns | 18 ns | 10A | 20V | 30V | 2.2W Ta 42W Tc | 10.8mOhm | 30V | N-Channel | 1450pF @ 15V | 1.8 V | 7.8mOhm @ 13A, 10V | 2.35V @ 25μA | 13A Ta 57A Tc | 18nC @ 4.5V | 7.8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BUK7510-100B,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2012 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk7510100b127-datasheets-6444.pdf | TO-220-3 | 3 | EAR99 | compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 300W Tc | TO-220AB | 75A | 438A | 0.01Ohm | 629 mJ | N-Channel | 6773pF @ 25V | 10m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 80nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF6629TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/infineontechnologies-irf6629tr1pbf-datasheets-6269.pdf | 25V | 29A | DirectFET™ Isometric MX | 506μm | 5.05mm | Lead Free | No SVHC | 2.1MOhm | 5 | No | 100W | DIRECTFET™ MX | 4.26nF | 20 ns | 67ns | 7.4 ns | 20 ns | 23A | 20V | 25V | 25V | 1.8V | 2.8W Ta 100W Tc | 2.7mOhm | 25V | N-Channel | 4260pF @ 13V | 1.8 V | 2.1mOhm @ 29A, 10V | 2.35V @ 100μA | 29A Ta 180A Tc | 51nC @ 4.5V | 2.1 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF6635TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/infineontechnologies-irf6635trpbf-datasheets-6426.pdf | 30V | 32A | DirectFET™ Isometric MX | Lead Free | No SVHC | 1.8MOhm | 5 | No | 89W | 1 | DIRECTFET™ MX | 5.97nF | 21 ns | 13ns | 8.3 ns | 33 ns | 25A | 20V | 30V | 30V | 2.8W Ta 89W Tc | 2.4mOhm | 30V | N-Channel | 5970pF @ 15V | 1.8 V | 1.8mOhm @ 32A, 10V | 2.35V @ 250μA | 32A Ta 180A Tc | 71nC @ 4.5V | 1.8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF6635TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/infineontechnologies-irf6635trpbf-datasheets-6426.pdf | 30V | 32A | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | Lead Free | 3 | 13 Weeks | No SVHC | 1.8MOhm | 5 | EAR99 | No | BOTTOM | 89W | 1 | FET General Purpose Power | R-XBCC-N3 | 21 ns | 13ns | 8.3 ns | 33 ns | 32mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8V | 2.8W Ta 89W Tc | 200 mJ | 30V | N-Channel | 5970pF @ 15V | 1.8 V | 1.8m Ω @ 32A, 10V | 2.35V @ 250μA | 32A Ta 180A Tc | 71nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTV26N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtt26n50p-datasheets-3884.pdf | 500V | 26A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 25ns | 20 ns | 58 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 78A | 1000 mJ | 500V | N-Channel | 3600pF @ 25V | 230m Ω @ 13A, 10V | 5.5V @ 250μA | 26A Tc | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IRF6638TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6638tr1pbf-datasheets-6570.pdf | 30V | 25A | DirectFET™ Isometric MX | 506μm | 5.05mm | Lead Free | No SVHC | 5 | No | 89W | 1 | DIRECTFET™ MX | 3.77nF | 19 ns | 45ns | 6.2 ns | 28 ns | 20A | 20V | 30V | 2.8W Ta 89W Tc | 3.9mOhm | 30V | N-Channel | 3770pF @ 15V | 1.8 V | 2.9mOhm @ 25A, 10V | 2.35V @ 100μA | 25A Ta 140A Tc | 45nC @ 4.5V | 2.9 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF6638TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/infineontechnologies-irf6638tr1pbf-datasheets-6570.pdf | 30V | 25A | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | Lead Free | 3 | 5 | EAR99 | No | e1 | TIN SILVER COPPER | BOTTOM | 260 | 30 | 89W | 1 | FET General Purpose Power | R-XBCC-N3 | 19 ns | 45ns | 6.2 ns | 28 ns | 20A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 89W Tc | 200A | 0.0029Ohm | 37 mJ | 30V | N-Channel | 3770pF @ 15V | 2.9m Ω @ 25A, 10V | 2.35V @ 100μA | 25A Ta 140A Tc | 45nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF6644TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-irf6644trpbf-datasheets-0636.pdf | 100V | 10.3A | DirectFET™ Isometric MN | 6.35mm | 506μm | 5.05mm | Lead Free | 3 | No SVHC | 13MOhm | 5 | LOW CONDUCTION LOSS | No | BOTTOM | Single | 2.8W | 1 | R-XBCC-N3 | 17 ns | 26ns | 16 ns | 34 ns | 8.3A | 20V | 100V | SILICON | DRAIN | 2.8V | 2.8W Ta 89W Tc | 63 ns | 228A | 86 mJ | 100V | N-Channel | 2210pF @ 25V | 2.8 V | 13m Ω @ 10.3A, 10V | 4.8V @ 150μA | 10.3A Ta 60A Tc | 47nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF6691TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/infineontechnologies-irf6691tr1pbf-datasheets-6646.pdf | 20V | 32A | DirectFET™ Isometric MT | 6.35mm | 506μm | 5.05mm | Lead Free | No SVHC | 2.5MOhm | 5 | No | 2.8W | 1 | DIRECTFET™ MT | 6.58nF | 23 ns | 95ns | 10 ns | 25 ns | 26A | 12V | 20V | 20V | 1.6V | 2.8W Ta 89W Tc | 2.5mOhm | 20V | N-Channel | 6580pF @ 10V | 1.6 V | 1.8mOhm @ 15A, 10V | 2.5V @ 250μA | 32A Ta 180A Tc | 71nC @ 4.5V | 1.8 mΩ | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||
| IRF6609TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | 20V | 31A | DirectFET™ Isometric MT | 6.35mm | 506μm | 5.05mm | Lead Free | 3 | 5 | EAR99 | LOW CONDUCTION LOSS | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 30 | 89W | 1 | R-XBCC-N3 | 24 ns | 95ns | 9.8 ns | 26 ns | 150mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8W Ta 89W Tc | 0.002Ohm | 240 mJ | 20V | N-Channel | 6290pF @ 10V | 2m Ω @ 31A, 10V | 2.45V @ 250μA | 31A Ta 150A Tc | 69nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF6626TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | 30V | 16A | DirectFET™ Isometric ST | 4.826mm | 506μm | 3.95mm | Lead Free | No SVHC | 5.4MOhm | 5 | No | 42W | 1 | DIRECTFET™ ST | 2.38nF | 13 ns | 15ns | 4.5 ns | 17 ns | 13A | 20V | 30V | 2.2W Ta 42W Tc | 7.1mOhm | 30V | N-Channel | 2380pF @ 15V | 2.35 V | 5.4mOhm @ 16A, 10V | 2.35V @ 250μA | 16A Ta 72A Tc | 29nC @ 4.5V | 5.4 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF6633TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | 20V | 16A | DirectFET™ Isometric MP | 6.35mm | 676μm | 5.05mm | Lead Free | 3 | 5.6MOhm | 3 | EAR99 | No | e1 | TIN SILVER COPPER | BOTTOM | 260 | 30 | 89W | 1 | FET General Purpose Power | 9.7 ns | 31ns | 4.3 ns | 12 ns | 16mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.3W Ta 89W Tc | 59A | 20V | N-Channel | 1250pF @ 10V | 5.6m Ω @ 16A, 10V | 2.2V @ 250μA | 16A Ta 59A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF6628TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/infineontechnologies-irf6628trpbf-datasheets-6243.pdf | 25V | 27A | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | Lead Free | 3 | 2.5MOhm | 5 | EAR99 | No | BOTTOM | 96W | 1 | FET General Purpose Power | R-XBCC-N3 | 20 ns | 83ns | 6.7 ns | 17 ns | 22A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 96W Tc | 160A | 220A | 38 mJ | 25V | N-Channel | 3770pF @ 15V | 2.5m Ω @ 27A, 10V | 2.35V @ 100μA | 27A Ta 160A Tc | 47nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF6637TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/infineontechnologies-irf6637trpbf-datasheets-0112.pdf | 30V | 14A | DirectFET™ Isometric MP | 6.35mm | Lead Free | No SVHC | 5 | No | 89W | 1 | DIRECTFET™ MP | 1.33nF | 12 ns | 15ns | 3.8 ns | 14 ns | 11A | 20V | 30V | 1.8V | 2.3W Ta 42W Tc | 10.8mOhm | 30V | N-Channel | 1330pF @ 15V | 1.8 V | 7.7mOhm @ 14A, 10V | 2.35V @ 250μA | 14A Ta 59A Tc | 17nC @ 4.5V | 7.7 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BUK7507-55B,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/nexperiausainc-buk750755b127-datasheets-6167.pdf | TO-220-3 | 3 | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | NO | 3 | Single | 203W | 1 | FET General Purpose Power | 24 ns | 52ns | 41 ns | 77 ns | 119A | 20V | 55V | SILICON | DRAIN | SWITCHING | 203W Tc | TO-220AB | 75A | 478A | 0.0071Ohm | 55V | N-Channel | 3760pF @ 25V | 7.1m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 53nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF6621TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6621tr1pbf-datasheets-6171.pdf | 20V | 12A | DirectFET™ Isometric SQ | 4.826mm | 506μm | 3.95mm | Lead Free | No SVHC | 5 | No | 42W | 1 | DIRECTFET™ SQ | 1.46nF | 12 ns | 14ns | 4.1 ns | 16 ns | 9.6A | 20V | 30V | 1.8V | 2.2W Ta 42W Tc | 12.1mOhm | 30V | N-Channel | 1460pF @ 15V | 1.8 V | 9.1mOhm @ 12A, 10V | 2.25V @ 250μA | 12A Ta 55A Tc | 17.5nC @ 4.5V | 9.1 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF6621TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf6621tr1pbf-datasheets-6171.pdf | 30V | 12A | DirectFET™ Isometric SQ | 4.826mm | 506μm | 3.95mm | Lead Free | 2 | 13 Weeks | No SVHC | 5 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 42W | 1 | R-XBCC-N2 | 12 ns | 14ns | 4.1 ns | 16 ns | 9.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.2W Ta 42W Tc | 96A | 0.0091Ohm | 13 mJ | 30V | N-Channel | 1460pF @ 15V | 1.8 V | 9.1m Ω @ 12A, 10V | 2.25V @ 250μA | 12A Ta 55A Tc | 17.5nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF6620TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/infineontechnologies-irf6620trpbf-datasheets-9810.pdf | 20V | 27A | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | Lead Free | No SVHC | 2.7MOhm | 5 | No | 89W | 1 | DIRECTFET™ MX | 4.13nF | 18 ns | 80ns | 6.6 ns | 20 ns | 22A | 20V | 20V | 2.8W Ta 89W Tc | 3.6mOhm | 20V | N-Channel | 4130pF @ 10V | 2.45 V | 2.7mOhm @ 27A, 10V | 2.45V @ 250μA | 27A Ta 150A Tc | 42nC @ 4.5V | 2.7 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF6626TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | 30V | 16A | DirectFET™ Isometric ST | 4.826mm | 506μm | 3.95mm | Lead Free | 5.4MOhm | 5 | No | 42W | DIRECTFET™ ST | 2.38nF | 13 ns | 15ns | 4.5 ns | 17 ns | 13A | 20V | 30V | 2.2W Ta 42W Tc | 7.1mOhm | 30V | N-Channel | 2380pF @ 15V | 5.4mOhm @ 16A, 10V | 2.35V @ 250μA | 16A Ta 72A Tc | 29nC @ 4.5V | 5.4 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF6631TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/infineontechnologies-irf6631trpbf-datasheets-6252.pdf | 30V | 13A | DirectFET™ Isometric SQ | 4.826mm | 506μm | 3.95mm | Lead Free | 3 | No SVHC | 5 | EAR99 | LOW CONDUCTION LOSS | No | BOTTOM | 42W | 1 | R-XBCC-N3 | 15 ns | 18ns | 4.9 ns | 18 ns | 10A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8V | 2.2W Ta 42W Tc | 0.0078Ohm | 30V | N-Channel | 1450pF @ 15V | 1.8 V | 7.8m Ω @ 13A, 10V | 2.35V @ 25μA | 13A Ta 57A Tc | 18nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF6628TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6628trpbf-datasheets-6243.pdf | 25V | 27A | DirectFET™ Isometric MX | 6.35mm | Lead Free | No SVHC | 2.5MOhm | 5 | No | 96W | 1 | DIRECTFET™ MX | 3.77nF | 20 ns | 83ns | 6.7 ns | 17 ns | 22A | 20V | 25V | 25V | 2.8W Ta 96W Tc | 3.3mOhm | 25V | N-Channel | 3770pF @ 15V | 1.9 V | 2.5mOhm @ 27A, 10V | 2.35V @ 100μA | 27A Ta 160A Tc | 47nC @ 4.5V | 2.5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF6629TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/infineontechnologies-irf6629tr1pbf-datasheets-6269.pdf | 25V | 29A | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | Lead Free | 3 | 5 | EAR99 | No | e1 | TIN SILVER COPPER | BOTTOM | 260 | 30 | 100W | 1 | FET General Purpose Power | R-XBCC-N3 | 20 ns | 67ns | 7.4 ns | 20 ns | 23A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 100W Tc | 180A | 230A | 0.0021Ohm | 1170 mJ | 25V | N-Channel | 4260pF @ 13V | 2.1m Ω @ 29A, 10V | 2.35V @ 100μA | 29A Ta 180A Tc | 51nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFV22N50PS | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh22n50p-datasheets-1343.pdf | 500V | 22A | PLUS-220SMD | Lead Free | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 350W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 25ns | 21 ns | 72 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 350W Tc | 55A | 0.27Ohm | 750 mJ | 500V | N-Channel | 2630pF @ 25V | 270m Ω @ 11A, 10V | 5.5V @ 2.5mA | 22A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IRF6613TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/infineontechnologies-irf6613trpbf-datasheets-4520.pdf | 40V | 23A | DirectFET™ Isometric MT | 6.35mm | 506μm | 5.05mm | Lead Free | No SVHC | 3.4MOhm | 5 | No | 89W | 1 | DIRECTFET™ MT | 5.95nF | 18 ns | 47ns | 4.9 ns | 27 ns | 18A | 20V | 40V | 40V | 1.35V | 2.8W Ta 89W Tc | 57 ns | 4.1mOhm | 40V | N-Channel | 5950pF @ 15V | 1.35 V | 3.4mOhm @ 23A, 10V | 2.25V @ 250μA | 23A Ta 150A Tc | 63nC @ 4.5V | 3.4 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTA3N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/ixys-ixty3n50p-datasheets-5773.pdf | 500V | 3A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 70W | 1 | Not Qualified | R-PSSO-G2 | 15ns | 12 ns | 38 ns | 3.6A | 30V | SILICON | DRAIN | SWITCHING | 70W Tc | 8A | 2Ohm | 180 mJ | 500V | N-Channel | 409pF @ 25V | 2 Ω @ 1.8A, 10V | 5.5V @ 50μA | 3.6A Tc | 9.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IRF6619TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6619-datasheets-5955.pdf | 20V | 30A | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | Lead Free | 3 | 5 | EAR99 | No | e1 | TIN SILVER COPPER | BOTTOM | 260 | 30 | 89W | 1 | FET General Purpose Power | R-XBCC-N3 | 21 ns | 71ns | 9.3 ns | 25 ns | 24A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 89W Tc | 240A | 0.0022Ohm | 240 mJ | 20V | N-Channel | 5040pF @ 10V | 2.2m Ω @ 30A, 10V | 2.45V @ 250μA | 30A Ta 150A Tc | 57nC @ 4.5V | 4.5V 10V | ±20V |
