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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BSP298L6327HUSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp298e6327-datasheets-7005.pdf | TO-261-4, TO-261AA | 4 | No | 1.8W | 1 | PG-SOT223-4 | 400pF | 10 ns | 25ns | 20 ns | 30 ns | 500mA | 20V | 400V | 1.8W Ta | N-Channel | 400pF @ 25V | 3Ohm @ 500mA, 10V | 4V @ 1mA | 500mA Ta | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS138N E7854 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss138ne6327-datasheets-5143.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | LOGIC LEVEL COMPATIBLE | compliant | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 360mW Ta | 0.23A | 3.8 pF | N-Channel | 41pF @ 25V | 3.5 Ω @ 230mA, 10V | 1.4V @ 250μA | 230mA Ta | 1.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC085N025S G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc085n025sg-datasheets-7060.pdf | 8-PowerTDFN | 5 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | 8541.29.00.95 | e3 | MATTE TIN | YES | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 2.8W Ta 52W Tc | 14A | 140A | 0.0085Ohm | 120 mJ | N-Channel | 1800pF @ 15V | 8.5m Ω @ 35A, 10V | 2V @ 25μA | 14A Ta 35A Tc | 14nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BSP92P E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp92pl6327htsa1-datasheets-2364.pdf | TO-261-4, TO-261AA | EAR99 | YES | Other Transistors | Single | 250V | 1.8W Ta | 0.26A | P-Channel | 104pF @ 25V | 12 Ω @ 260mA, 10V | 2V @ 130μA | 260mA Ta | 5.4nC @ 10V | 2.8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP324 E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp324e6327-datasheets-7067.pdf | TO-261-4, TO-261AA | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400V | 400V | 1.8W Ta | 0.17A | 0.68A | N-Channel | 154pF @ 25V | 25 Ω @ 170mA, 10V | 2.3V @ 94μA | 170mA Ta | 5.9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSP125 E6433 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp125e6433-datasheets-7071.pdf | TO-261-4, TO-261AA | 4 | EAR99 | 8541.29.00.95 | YES | DUAL | GULL WING | 260 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 600V | 600V | 1.8W Ta | 0.12A | 0.48A | N-Channel | 150pF @ 25V | 45 Ω @ 120mA, 10V | 2.3V @ 94μA | 120mA Ta | 6.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO613SPV | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bso613spv-datasheets-7075.pdf | -60V | -3.44A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | EAR99 | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | 235 | 8 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G8 | 3.44A | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 2.5W Ta | 13.8A | 0.13Ohm | 150 mJ | P-Channel | 875pF @ 25V | 130m Ω @ 3.44A, 10V | 4V @ 1mA | 3.44A Ta | 30nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BSP125 E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp125e6433-datasheets-7071.pdf | TO-261-4, TO-261AA | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | 255 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 600V | 600V | 1.8W Ta | 0.12A | 0.48A | N-Channel | 150pF @ 25V | 45 Ω @ 120mA, 10V | 2.3V @ 94μA | 120mA Ta | 6.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BSO130P03SNTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bso130p03sntma1-datasheets-7083.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | unknown | DUAL | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | Not Qualified | 9.2A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.56W Ta | 0.013Ohm | P-Channel | 3520pF @ 25V | 13m Ω @ 11.3A, 10V | 2.2V @ 140μA | 9.2A Ta | 81nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BSO064N03S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bso064n03s-datasheets-7087.pdf | 30V | 16A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1.56W | 1 | FET General Purpose Power | Not Qualified | 6.7 ns | 5.8ns | 5.8 ns | 29 ns | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.56W Ta | MS-012AA | 0.0064Ohm | 30V | N-Channel | 3620pF @ 15V | 6.4m Ω @ 16A, 10V | 2V @ 50μA | 12A Ta | 28nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BSP613P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp613pl6327husa1-datasheets-2524.pdf | TO-261-4, TO-261AA | 4 | yes | EAR99 | AVALANCHE RATED | 8541.29.00.95 | e3 | MATTE TIN | YES | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1.8W Ta | 2.9A | 11.6A | 0.13Ohm | 150 mJ | P-Channel | 875pF @ 25V | 130m Ω @ 2.9A, 10V | 4V @ 1mA | 2.9A Ta | 33nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BSP320S E6433 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp320se6433-datasheets-7095.pdf | TO-261-4, TO-261AA | 60V | 1.8W Ta | N-Channel | 340pF @ 25V | 120m Ω @ 2.9A, 10V | 4V @ 20μA | 2.9A Ta | 12nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS119 E7796 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss119l6433htma1-datasheets-4620.pdf | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 100V | 360mW Ta | N-Channel | 78pF @ 25V | 6Ohm @ 170mA, 10V | 2.3V @ 50μA | 170mA Ta | 2.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH47N60F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fch47n60f-datasheets-6979.pdf | TO-247-3 | compliant | FCH47N60 | 600V | 417W Tc | N-Channel | 8000pF @ 25V | 73m Ω @ 23.5A, 10V | 5V @ 250μA | 47A Tc | 270nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC024N025S G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc024n025sg-datasheets-6980.pdf | 8-PowerTDFN | 5 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 2.8W Ta 89W Tc | 27A | 200A | 0.0037Ohm | 800 mJ | N-Channel | 6530pF @ 15V | 2.4m Ω @ 50A, 10V | 2V @ 90μA | 27A Ta 100A Tc | 52nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FDD8586 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/onsemiconductor-fdu8586-datasheets-6718.pdf | 20V | 35A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | No SVHC | 5.5MOhm | 3 | Single | 77W | 1 | 11ns | 25 ns | 47 ns | 35A | 20V | 20V | 1.6V | 77W Tc | 20V | N-Channel | 2480pF @ 10V | 1.6 V | 5.5m Ω @ 35A, 10V | 2.5V @ 250μA | 35A Tc | 48nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ162-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/renesaselectronicsamerica-2sj162e-datasheets-6985.pdf | -160V | -7A | TO-3P-3, SC-65-3 | Lead Free | 3 | 3 | yes | EAR99 | No | SINGLE | 4 | 1 | Other Transistors | 7A | 15V | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | SWITCHING | 160V | 100W Tc | 7A | P-Channel | 900pF @ 10V | 7A Ta | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2315TYTR-E | Renesas Electronics America | $0.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-2sk2315tytre-datasheets-6987.pdf | 60V | 2A | TO-243AA | Lead Free | 3 | 16 Weeks | EAR99 | Tin | SINGLE | FLAT | 260 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-F3 | 2A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1W Ta | 2A | 4A | 0.45Ohm | N-Channel | 173pF @ 10V | 450m Ω @ 1A, 4V | 2A Ta | 3V 4V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSS119 E7978 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss119l6433htma1-datasheets-4620.pdf | TO-236-3, SC-59, SOT-23-3 | 100V | 360mW Ta | N-Channel | 78pF @ 25V | 6 Ω @ 170mA, 10V | 2.3V @ 50μA | 170mA Ta | 2.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP298 E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp298e6327-datasheets-7005.pdf | TO-261-4, TO-261AA | 4 | EAR99 | AVALANCHE RATED | 8541.29.00.95 | YES | DUAL | GULL WING | 255 | 4 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE | DRAIN | 400V | 400V | 1.8W Ta | 0.5A | 2A | 3Ohm | 130 mJ | N-Channel | 400pF @ 25V | 3 Ω @ 500mA, 10V | 4V @ 1mA | 500mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSP372 E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp372l6327htsa1-datasheets-2306.pdf | TO-261-4, TO-261AA | 4 | no | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | YES | DUAL | GULL WING | 235 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 1.8W Ta | 1.7A | 6.8A | 0.31Ohm | 45 mJ | N-Channel | 520pF @ 25V | 310m Ω @ 1.7A, 5V | 2V @ 1mA | 1.7A Ta | 5V | ±14V | |||||||||||||||||||||||||||||||||||||||||||||
| BSP135L6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp135l6327htsa1-datasheets-7013.pdf | TO-261-4, TO-261AA | Lead Free | 4 | 4 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 4 | 1.8W | 1 | 5.4 ns | 5.6ns | 182 ns | 28 ns | 120mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 600V | 600V | 1.8W Ta | N-Channel | 146pF @ 25V | 45 Ω @ 120mA, 10V | 1V @ 94μA | 120mA Ta | 4.9nC @ 5V | Depletion Mode | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BSP296 E6433 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp296e6327-datasheets-5056.pdf | TO-261-4, TO-261AA | 100V | 1.79W Ta | N-Channel | 364pF @ 25V | 700m Ω @ 1.1A, 10V | 1.8V @ 400μA | 1.1A Ta | 17.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP149 E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp149h6327xtsa1-datasheets-3532.pdf | TO-261-4, TO-261AA | 4 | EAR99 | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 200V | 200V | 1.8W Ta | 0.48A | 1.44A | 3.5Ohm | N-Channel | 430pF @ 25V | 1.8 Ω @ 660mA, 10V | 1V @ 400μA | 660mA Ta | 14nC @ 5V | Depletion Mode | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BSP299 E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp299e6327-datasheets-7024.pdf | TO-261-4, TO-261AA | 4 | EAR99 | AVALANCHE RATED | 8541.29.00.95 | YES | DUAL | GULL WING | 255 | 4 | 30 | 1 | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 500V | 500V | 1.8W Ta | 0.4A | 1.6A | 4Ohm | 130 mJ | N-Channel | 400pF @ 25V | 4 Ω @ 400mA, 10V | 4V @ 1mA | 400mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| BSP129L6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp129h6327xtsa1-datasheets-9195.pdf | TO-261-4, TO-261AA | 4 | 4 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 4 | 1.8W | 1 | 4.4 ns | 4.1ns | 35 ns | 22 ns | 350mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 240V | 1.8W Ta | 0.35A | 6Ohm | N-Channel | 108pF @ 25V | 6 Ω @ 350mA, 10V | 1V @ 108μA | 350mA Ta | 5.7nC @ 5V | Depletion Mode | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSP297 E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp297l6327htsa1-datasheets-2317.pdf | TO-261-4, TO-261AA | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.29.00.75 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 1.8W Ta | 0.66A | 2.64A | N-Channel | 357pF @ 25V | 1.8 Ω @ 660mA, 10V | 1.8V @ 400μA | 660mA Ta | 16.1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSP300L6327HUSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp300l6327husa1-datasheets-7035.pdf | TO-261-4, TO-261AA | 4 | 4 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 4 | 1.8W | 1 | 7 ns | 16ns | 21 ns | 27 ns | 190mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 800V | 800V | 1.8W Ta | 0.76A | 36 mJ | N-Channel | 230pF @ 25V | 20 Ω @ 190mA, 10V | 4V @ 1mA | 190mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BSC037N025S G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc037n025sg-datasheets-6969.pdf | 8-PowerTDFN | 5 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 2.8W Ta 69W Tc | 21A | 200A | 0.006Ohm | 350 mJ | N-Channel | 3660pF @ 15V | 3.7m Ω @ 50A, 10V | 2V @ 50μA | 21A Ta 100A Tc | 29nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF6662TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6662trpbf-datasheets-5082.pdf | 100V | 8.3A | DirectFET™ Isometric MZ | 5.45mm | 508μm | 5.05mm | Lead Free | No SVHC | 22MOhm | 5 | No | Single | 89W | 1 | DIRECTFET™ MZ | 1.36nF | 11 ns | 7.5ns | 5.9 ns | 24 ns | 6.6A | 20V | 100V | 100V | 3.9V | 2.8W Ta 89W Tc | 51 ns | 17.5mOhm | 100V | N-Channel | 1360pF @ 25V | 3.9 V | 22mOhm @ 8.2A, 10V | 4.9V @ 100μA | 8.3A Ta 47A Tc | 31nC @ 10V | 22 mΩ | 10V | ±20V |
