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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTP5N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta5n60p-datasheets-6010.pdf | 600V | 5A | TO-220-3 | Lead Free | 3 | 8 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 100W | 1 | Not Qualified | R-PSFM-T3 | 24ns | 17 ns | 55 ns | 5A | 30V | SILICON | DRAIN | SWITCHING | 100W Tc | TO-220AB | 5A | 10A | 360 mJ | 600V | N-Channel | 750pF @ 25V | 1.7 Ω @ 2.5A, 10V | 5.5V @ 50μA | 5A Tc | 14.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IRF6612TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | 30V | 24A | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | Lead Free | 3 | No SVHC | 5 | EAR99 | e1 | TIN SILVER COPPER | BOTTOM | NO LEAD | 260 | 30 | 89W | 1 | Not Qualified | R-XBCC-N3 | 15 ns | 52ns | 4.8 ns | 21 ns | 136mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 89W Tc | 190A | 0.0033Ohm | 37 mJ | 30V | N-Channel | 3970pF @ 15V | 1.8 V | 3.3m Ω @ 24A, 10V | 2.25V @ 250μA | 24A Ta 136A Tc | 45nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| IRF6617TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6617trpbf-datasheets-3096.pdf | 30V | 42A | DirectFET™ Isometric ST | 4.826mm | 506μm | 3.95mm | Lead Free | No SVHC | 8.1MOhm | 5 | No | 42W | DIRECTFET™ ST | 1.3nF | 11 ns | 34ns | 3.7 ns | 12 ns | 11A | 20V | 30V | 2.1W Ta 42W Tc | 10.3mOhm | 30V | N-Channel | 1300pF @ 15V | 2.35 V | 8.1mOhm @ 15A, 10V | 2.35V @ 250μA | 14A Ta 55A Tc | 17nC @ 4.5V | 8.1 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF6618TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | /files/infineontechnologies-irf6618trpbf-datasheets-4776.pdf | 30V | 30A | DirectFET™ Isometric MT | 6.35mm | 506μm | 5.05mm | Lead Free | No SVHC | 2.2MOhm | 5 | No | 89W | 1 | DIRECTFET™ MT | 5.64nF | 21 ns | 71ns | 8.1 ns | 27 ns | 23A | 20V | 30V | 2.8W Ta 89W Tc | 3.4mOhm | 30V | N-Channel | 5640pF @ 15V | 1.64 V | 2.2mOhm @ 30A, 10V | 2.35V @ 250μA | 30A Ta 170A Tc | 65nC @ 4.5V | 2.2 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF6611TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/infineontechnologies-irf6611trpbf-datasheets-5976.pdf | 30V | 32A | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | Lead Free | 3 | 5 | EAR99 | No | BOTTOM | 260 | 40 | 89W | 1 | R-XBCC-N3 | 18 ns | 57ns | 6.5 ns | 24 ns | 22A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.9W Ta 89W Tc | 220A | 0.0026Ohm | 310 mJ | 30V | N-Channel | 4860pF @ 15V | 2.6m Ω @ 27A, 10V | 2.25V @ 250μA | 32A Ta 150A Tc | 56nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTV22N60PS | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq22n60p-datasheets-0455.pdf | 600V | 22A | PLUS-220SMD | Lead Free | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | R-PSSO-G2 | 20ns | 23 ns | 60 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | 66A | 1000 mJ | 600V | N-Channel | 3600pF @ 25V | 350m Ω @ 11A, 10V | 5.5V @ 250μA | 22A Tc | 62nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFC22N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfc22n60p-datasheets-5996.pdf | 600V | 22A | ISOPLUS220™ | Lead Free | 3 | 3 | yes | UL RECOGNIZED, AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 130W | 1 | Not Qualified | 20ns | 23 ns | 60 ns | 12A | 30V | SILICON | ISOLATED | SWITCHING | 130W Tc | 66A | 1000 mJ | 600V | N-Channel | 4000pF @ 25V | 360m Ω @ 11A, 10V | 5V @ 4mA | 12A Tc | 58nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IRF6610TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/infineon-irf6610tr1pbf-datasheets-9050.pdf | 20V | 15A | DirectFET™ Isometric SQ | Lead Free | No SVHC | 5 | EAR99 | 42W | 12A | 20V | 2.1V | 2.2W Ta 42W Tc | 20V | N-Channel | 1520pF @ 10V | 2.1 V | 6.8m Ω @ 15A, 10V | 2.55V @ 250μA | 15A Ta 66A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA5N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta5n60p-datasheets-6010.pdf | 600V | 5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | yes | AVALANCHE RATED | Pure Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 100W | 1 | Not Qualified | R-PSSO-G2 | 24ns | 17 ns | 55 ns | 5A | 30V | SILICON | DRAIN | SWITCHING | 100W Tc | 5A | 10A | 360 mJ | 600V | N-Channel | 750pF @ 25V | 1.7 Ω @ 2.5A, 10V | 5.5V @ 50μA | 5A Tc | 14.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IRF6611TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6611trpbf-datasheets-5976.pdf | 30V | 32A | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | Lead Free | No SVHC | 5 | No | 89W | 1 | DIRECTFET™ MX | 4.86nF | 18 ns | 57ns | 6.5 ns | 24 ns | 22A | 20V | 30V | 3.9W Ta 89W Tc | 3.4mOhm | 30V | N-Channel | 4860pF @ 15V | 2.25 V | 2.6mOhm @ 27A, 10V | 2.25V @ 250μA | 32A Ta 150A Tc | 56nC @ 4.5V | 2.6 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFV30N50PS | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/ixys-ixfh30n50p-datasheets-3825.pdf | 500V | 30A | PLUS-220SMD | Lead Free | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | R-PSSO-G2 | 24ns | 24 ns | 82 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 75A | 0.2Ohm | 1200 mJ | 500V | N-Channel | 4150pF @ 25V | 200m Ω @ 15A, 10V | 5V @ 4mA | 30A Tc | 70nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTA5N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtu5n50p-datasheets-2981.pdf | 500V | 5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 89W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 26ns | 24 ns | 65 ns | 4.8A | 30V | SILICON | DRAIN | SWITCHING | 89W Tc | TO-263AA | 5A | 10A | 250 mJ | 500V | N-Channel | 620pF @ 25V | 1.4 Ω @ 2.4A, 10V | 5.5V @ 50μA | 4.8A Tc | 12.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXFC16N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfc16n50p-datasheets-5928.pdf | 500V | 16A | ISOPLUS220™ | Lead Free | 3 | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 125W | 1 | FET General Purpose Power | Not Qualified | 25ns | 22 ns | 70 ns | 10A | 30V | SILICON | ISOLATED | SWITCHING | 125W Tc | 0.45Ohm | 750 mJ | 500V | N-Channel | 2250pF @ 25V | 450m Ω @ 8A, 10V | 5.5V @ 2.5mA | 10A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTV26N60PS | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth26n60p-datasheets-3794.pdf | 600V | 26A | PLUS-220SMD | Lead Free | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | R-PSSO-G2 | 27ns | 21 ns | 75 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 65A | 0.27Ohm | 1200 mJ | 600V | N-Channel | 4150pF @ 25V | 270m Ω @ 500mA, 10V | 5V @ 250μA | 26A Tc | 72nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXFV26N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh26n50p-datasheets-9078.pdf | 500V | 26A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 25ns | 20 ns | 58 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | 78A | 1000 mJ | 500V | N-Channel | 3600pF @ 25V | 230m Ω @ 13A, 10V | 5.5V @ 4mA | 26A Tc | 60nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFV30N60PS | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n60p-datasheets-3966.pdf | 600V | 30A | PLUS-220SMD | Lead Free | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | R-PSSO-G2 | 20ns | 25 ns | 80 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | 80A | 0.24Ohm | 1500 mJ | 600V | N-Channel | 4000pF @ 25V | 240m Ω @ 15A, 10V | 5V @ 4mA | 30A Tc | 82nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTY2N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp2n60p-datasheets-5877.pdf | 600V | 2A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 55W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 20ns | 23 ns | 60 ns | 2A | 30V | SILICON | DRAIN | SWITCHING | 55W Tc | TO-252AA | 2A | 4A | 150 mJ | 600V | N-Channel | 240pF @ 25V | 5.1 Ω @ 1A, 10V | 5V @ 250μA | 2A Tc | 7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IRF6610TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | 20V | 15A | DirectFET™ Isometric SQ | Lead Free | 5 | EAR99 | 42W | 12A | 20V | 2.2W Ta 42W Tc | 20V | N-Channel | 1520pF @ 10V | 6.8m Ω @ 15A, 10V | 2.55V @ 250μA | 15A Ta 66A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6609TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | 20V | 31A | DirectFET™ Isometric MT | 6.35mm | 506μm | 5.05mm | Lead Free | No SVHC | 2MOhm | 5 | No | 1.8W | 1 | DIRECTFET™ MT | 6.29nF | 24 ns | 95ns | 9.8 ns | 26 ns | 25A | 20V | 20V | 20V | 1.55V | 1.8W Ta 89W Tc | 2.6mOhm | 20V | N-Channel | 6290pF @ 10V | 2.45 V | 2mOhm @ 31A, 10V | 2.45V @ 250μA | 31A Ta 150A Tc | 69nC @ 4.5V | 2 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTA3N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty3n60p-datasheets-5894.pdf | 600V | 3A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 70W | 1 | Not Qualified | R-PSSO-G2 | 25ns | 22 ns | 58 ns | 3A | 30V | SILICON | DRAIN | SWITCHING | 70W Tc | 3A | 6A | 100 mJ | 600V | N-Channel | 411pF @ 25V | 2.9 Ω @ 500mA, 10V | 5.5V @ 50μA | 3A Tc | 9.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| BUK7511-55B,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk751155b127-datasheets-5916.pdf | TO-220-3 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 157W Tc | TO-220AB | 75A | 338A | 0.011Ohm | 173 mJ | N-Channel | 2604pF @ 25V | 11m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 37nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTP2R4N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty2r4n50p-datasheets-5764.pdf | 500V | 2A | TO-220-3 | Lead Free | 3 | 7 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 55W | 1 | Not Qualified | R-PSFM-T3 | 29ns | 28 ns | 65 ns | 2.4A | 30V | SILICON | DRAIN | SWITCHING | 55W Tc | TO-220AB | 4.5A | 100 mJ | 500V | N-Channel | 240pF @ 25V | 3.75 Ω @ 500mA, 10V | 5.5V @ 25μA | 2.4A Tc | 6.1nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFV18N60PS | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh18n60p-datasheets-2073.pdf | 600V | 18A | PLUS-220SMD | Lead Free | 2 | No SVHC | 220 | yes | EAR99 | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSSO-G2 | 22ns | 22 ns | 62 ns | 18A | 30V | 600V | SILICON | DRAIN | SWITCHING | 5.5V | 360W Tc | 200 ns | 45A | 0.4Ohm | 1000 mJ | 600V | N-Channel | 2500pF @ 25V | 5.5 V | 400m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 18A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXFV30N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n50p-datasheets-3825.pdf | 500V | 30A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | 24ns | 24 ns | 82 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 75A | 0.2Ohm | 1200 mJ | 500V | N-Channel | 4150pF @ 25V | 200m Ω @ 15A, 10V | 5V @ 4mA | 30A Tc | 70nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTP1R4N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty1r4n60p-datasheets-5843.pdf | 600V | 1.4A | TO-220-3 | Lead Free | 3 | 2 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 50W | 1 | Not Qualified | R-PSFM-T3 | 16ns | 16 ns | 25 ns | 1.4A | 30V | SILICON | DRAIN | SWITCHING | 50W Tc | TO-220AB | 9Ohm | 75 mJ | 600V | N-Channel | 140pF @ 25V | 9 Ω @ 700mA, 10V | 5.5V @ 25μA | 1.4A Tc | 5.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFC36N50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfr36n50p-datasheets-3707.pdf | 500V | 36A | ISOPLUS220™ | Lead Free | 3 | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 156W | 1 | Not Qualified | 23ns | 23 ns | 82 ns | 19A | 30V | SILICON | ISOLATED | SWITCHING | 156W Tc | 500V | N-Channel | 5500pF @ 25V | 190m Ω @ 18A, 10V | 5V @ 4mA | 19A Tc | 93nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXTV36N50PS | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth36n50p-datasheets-5556.pdf | 500V | 36A | PLUS-220SMD | Lead Free | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | R-PSSO-G2 | 27ns | 21 ns | 75 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 540W Tc | 108A | 0.17Ohm | 1500 mJ | 500V | N-Channel | 5500pF @ 25V | 170m Ω @ 500mA, 10V | 5V @ 250μA | 36A Tc | 85nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTV26N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth26n60p-datasheets-3794.pdf | 600V | 26A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | Not Qualified | 27ns | 21 ns | 75 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 65A | 0.27Ohm | 1200 mJ | 600V | N-Channel | 4150pF @ 25V | 270m Ω @ 500mA, 10V | 5V @ 250μA | 26A Tc | 72nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTI10N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixti10n60p-datasheets-5893.pdf | 600V | 10A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 200W | 1 | Not Qualified | R-PSIP-T3 | 24ns | 18 ns | 55 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 200W Tc | TO-263 | 30A | 0.74Ohm | 500 mJ | 600V | N-Channel | 1610pF @ 25V | 740m Ω @ 5A, 10V | 5V @ 100μA | 10A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTY3N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty3n60p-datasheets-5894.pdf | 600V | 3A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 8 Weeks | 2.9Ohm | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 70W | 1 | Not Qualified | R-PSSO-G2 | 25ns | 22 ns | 58 ns | 3A | 30V | SILICON | DRAIN | SWITCHING | 70W Tc | TO-252AA | 3A | 6A | 100 mJ | 600V | N-Channel | 411pF @ 25V | 2.9 Ω @ 500mA, 10V | 5.5V @ 50μA | 3A Tc | 9.8nC @ 10V | 10V | ±30V |
