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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Min) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FCP850N80Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fcp850n80z-datasheets-3909.pdf | TO-220-3 | 12 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 8A | 800V | 4.5V | 136W Tc | N-Channel | 1315pF @ 100V | 850m Ω @ 3A, 10V | 4.5V @ 600μA | 8A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VN2460N3-G-P003 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-vn2460n8g-datasheets-3355.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | BOTTOM | 1 | Single | 1 | 10 ns | 10ns | 20 ns | 25 ns | 160mA | 20V | SILICON | SWITCHING | 600V | 600V | 1W Ta | 25Ohm | 25 pF | N-Channel | 150pF @ 25V | 20 Ω @ 100mA, 10V | 4V @ 2mA | 160mA Tj | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB77N06S212ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipp77n06s212aksa2-datasheets-7762.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | 3 | yes | EAR99 | not_compliant | Halogen Free | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 158W | 1 | R-PSSO-G2 | 14 ns | 27ns | 26 ns | 34 ns | 77A | 20V | 55V | SILICON | DRAIN | 158W Tc | 0.0117Ohm | 280 mJ | 55V | N-Channel | 1770pF @ 25V | 11.7m Ω @ 38A, 10V | 4V @ 93μA | 77A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| AON6154 | Alpha & Omega Semiconductor Inc. | $0.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerSMD, Flat Leads | 18 Weeks | 45V | 125W Tc | N-Channel | 6575pF @ 22.5V | 1.5m Ω @ 20A, 10V | 2.4V @ 250μA | 100A Tc | 120nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS4C01NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfs4c01nt1g-datasheets-9181.pdf | 8-PowerTDFN | Lead Free | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | AEC-Q101 | DUAL | FLAT | 1 | FET General Purpose Power | R-PDSO-F5 | 319A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 30V | 3.84W Ta 161W Tc | 900A | 0.00095Ohm | N-Channel | 10144pF @ 15V | 0.9m Ω @ 30A, 10V | 2.2V @ 250μA | 49A Ta 319A Tc | 139nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB80N06S2L11ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipp80n06s2l11aksa2-datasheets-8624.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10mm | 4.4mm | 9.25mm | Contains Lead | 2 | 10 Weeks | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | not_compliant | Halogen Free | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 158W | 1 | R-PSSO-G2 | 11 ns | 32ns | 13 ns | 46 ns | 80A | 20V | 55V | SILICON | DRAIN | 158W Tc | 0.0147Ohm | 280 mJ | 55V | N-Channel | 2075pF @ 25V | 10.7m Ω @ 40A, 10V | 2V @ 93μA | 80A Tc | 80nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPP80N06S207AKSA4 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80n06s207aksa2-datasheets-8954.pdf | TO-220-3 | 3 | 10 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 55V | 55V | 250W Tc | TO-220AB | 80A | 320A | 0.0066Ohm | 530 mJ | N-Channel | 3400pF @ 25V | 6.6m Ω @ 68A, 10V | 4V @ 180μA | 80A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4413DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~125°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 8-SOIC | P-Channel | 4780pF @ 15V | 5.5mOhm @ 10A, 10V | 1.6V @ 250μA | 114nC @ 10V | 4.5V 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPS1100PW | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1.2mm | 4.4mm | Lead Free | 8 | 12 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | 1mm | EAR99 | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 260 | TPS1100 | 8 | 504mW | 1 | Other Transistors | 4.5 ns | 10ns | 10 ns | 13 ns | 1.27A | 2V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 504mW Ta | 0.4Ohm | 15V | P-Channel | 180m Ω @ 1.5A, 10V | 1.5V @ 250μA | 1.27A Ta | 5.45nC @ 10V | 2.7V 10V | +2V, -15V | ||||||||||||||||||||||||||||||||||||||||||
| IPAW60R280P7SE8228XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 Full Pack | 18 Weeks | 600V | 24W Tc | N-Channel | 761pF @ 400V | 280m Ω @ 3.8A, 10V | 4V @ 190μA | 12A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ14STRRPBF | Vishay Siliconix | $8.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlz14spbf-datasheets-8912.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 11 Weeks | 1.437803g | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 400pF | 9.3 ns | 110ns | 26 ns | 17 ns | 10A | 10V | 60V | 3.7W Ta 43W Tc | 200mOhm | 60V | N-Channel | 400pF @ 25V | 200mOhm @ 6A, 5V | 2V @ 250μA | 10A Tc | 8.4nC @ 5V | 200 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| RJK1054DPB-00#J5 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk1054dpb00j5-datasheets-3793.pdf | SC-100, SOT-669 | 16 Weeks | yes | NOT SPECIFIED | 5 | NOT SPECIFIED | 100V | 55W Tc | N-Channel | 2000pF @ 10V | 22m Ω @ 10A, 10V | 20A Ta | 27nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF5N100 | Alpha & Omega Semiconductor Inc. | $1.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aotf5n100-datasheets-8118.pdf | TO-220-3 Full Pack | 18 Weeks | 4A | 1000V | 42W Tc | N-Channel | 1150pF @ 25V | 4.2 Ω @ 2.5A, 10V | 4.5V @ 250μA | 4A Tc | 23nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF40DM229 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-irf40dm229-datasheets-3242.pdf | DirectFET™ Isometric MF | 12 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 40V | 83W Tc | N-Channel | 5317pF @ 25V | 1.85m Ω @ 97A, 10V | 3.9V @ 100μA | 159A Tc | 161nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN5R6-100YSFQ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | ROHS3 Compliant | 4 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RCX050N25 | ROHM Semiconductor | $5.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rcx050n25-datasheets-3810.pdf | TO-220-3 Full Pack | Lead Free | 3 | 6.000006g | 3 | EAR99 | No | 3 | 1 | Single | 1 | 17 ns | 18ns | 12 ns | 20 ns | 5A | 30V | SILICON | ISOLATED | SWITCHING | 30W Tc | TO-220AB | 5A | 20A | 250V | N-Channel | 410pF @ 25V | 1100m Ω @ 2.5A, 10V | 5.5V @ 1mA | 5A Ta | 9nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSC019N02KSGAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc019n02ksgauma1-datasheets-3811.pdf | 8-PowerTDFN | Contains Lead | 5 | 39 Weeks | 8 | no | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 104W | 1 | Not Qualified | R-PDSO-F5 | 15 ns | 187ns | 8 ns | 95 ns | 100A | 12V | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 104W Tc | 30A | 200A | 0.003Ohm | N-Channel | 13000pF @ 10V | 1.95m Ω @ 50A, 4.5V | 1.2V @ 350μA | 30A Ta 100A Tc | 85nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| AOB9N70L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | TO-263 (D2Pak) | 1.63nF | 9A | 700V | 236W Tc | N-Channel | 1630pF @ 25V | 1.2Ohm @ 4.5A, 10V | 4.5V @ 250μA | 9A Tc | 35nC @ 10V | 1.2 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R5207ANDTL | ROHM Semiconductor | $7.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.5mm | 2.3mm | 5.5mm | Lead Free | 2 | 20 Weeks | 3 | yes | No | e2 | Tin/Copper (Sn98Cu2) | GULL WING | 260 | 1 | Single | 10 | 1 | R-PSSO-G2 | 20 ns | 22ns | 25 ns | 50 ns | 7A | 30V | SILICON | SWITCHING | 525V | 525V | 40W Tc | 7A | 28A | 1Ohm | N-Channel | 500pF @ 25V | 1 Ω @ 3.5A, 10V | 4.5V @ 1mA | 7A Ta | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| BUK962R6-40E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk962r640e118-datasheets-3179.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | GULL WING | 3 | 1 | Single | 1 | R-PSSO-G2 | 52 ns | 93ns | 84 ns | 131 ns | 100A | 15V | 40V | SILICON | DRAIN | SWITCHING | 263W Tc | 885A | 0.0028Ohm | 574 mJ | N-Channel | 10285pF @ 25V | 2.4m Ω @ 25A, 10V | 2.1V @ 250μA | 100A Tc | 80.6nC @ 32V | 5V 10V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||
| VN2460N3-G-P014 | Microchip Technology | $1.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-vn2460n8g-datasheets-3355.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | EAR99 | BOTTOM | 1 | Single | 1 | O-PBCY-T3 | 10 ns | 10ns | 20 ns | 25 ns | 160mA | 20V | SILICON | SWITCHING | 600V | 600V | 1W Ta | 25Ohm | 25 pF | N-Channel | 150pF @ 25V | 20 Ω @ 100mA, 10V | 4V @ 2mA | 160mA Tj | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TJ60S06M3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | 3 | No | AEC-Q101 | SINGLE | GULL WING | 1 | R-PSSO-G2 | 100ns | 250 ns | 60A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 100W Tc | 120A | 0.0145Ohm | P-Channel | 7760pF @ 10V | 11.2m Ω @ 30A, 10V | 3V @ 1mA | 60A Ta | 156nC @ 10V | 6V 10V | +10V, -20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA126N10NM3SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa126n10nm3sxksa1-datasheets-3835.pdf | TO-220-3 Full Pack | 13 Weeks | 100V | 33W Tc | N-Channel | 2500pF @ 50V | 12.6m Ω @ 39A, 10V | 3.5V @ 46μA | 39A Tc | 35nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK4A60D(STA4,Q,M) | Toshiba Semiconductor and Storage | $0.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 12 Weeks | 3 | No | 18ns | 8 ns | 4A | 30V | 600V | 35W Tc | N-Channel | 600pF @ 25V | 1.7 Ω @ 2A, 10V | 4.4V @ 1mA | 4A Ta | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7734M2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirf7734m2tr-datasheets-3836.pdf | DirectFET™ Isometric M2 | 3 | 16 Weeks | 7 | EAR99 | No | AEC-Q101 | BOTTOM | 2.5W | 1 | FET General Purpose Power | R-XBCC-N3 | 13 ns | 49ns | 45 ns | 42 ns | 17A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 46W Tc | 288A | 0.0049Ohm | 56 mJ | 40V | N-Channel | 2545pF @ 25V | 4.9m Ω @ 43A, 10V | 4V @ 100μA | 17A Ta | 72nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPI147N12N3GAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb144n12n3gatma1-datasheets-7308.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 12 Weeks | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 107W | 1 | Not Qualified | R-PSIP-T3 | 16 ns | 9ns | 4 ns | 24 ns | 56A | 20V | 120V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 107W Tc | 224A | 90 mJ | N-Channel | 3220pF @ 60V | 14.7m Ω @ 56A, 10V | 4V @ 61μA | 56A Ta | 49nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF3710LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf3710strlpbf-datasheets-0132.pdf | 100V | 57A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 14 Weeks | 23MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 200W | 1 | FET General Purpose Power | 12 ns | 58ns | 47 ns | 45 ns | 57A | 20V | SILICON | DRAIN | SWITCHING | 200W Tc | 49A | 280 mJ | 100V | N-Channel | 3130pF @ 25V | 23m Ω @ 28A, 10V | 4V @ 250μA | 57A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPD70N12S3L12ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd70n12s3l12atma1-datasheets-3716.pdf | 2 | 14 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | -55°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 120V | METAL-OXIDE SEMICONDUCTOR | TO-252 | 70A | 280A | 0.0152Ohm | 410 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| N0602N-S19-AY | Renesas Electronics America | $2.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-n0602ns19ay-datasheets-3720.pdf | TO-220-3 Isolated Tab | 16 Weeks | 3 | EAR99 | No | 3 | 35 ns | 12ns | 14 ns | 76 ns | 100A | 20V | 60V | 1.5W Ta 156W Tc | N-Channel | 7730pF @ 25V | 4.6m Ω @ 50A, 10V | 100A Ta | 133nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN7R8-120ESQ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn7r8120esq-datasheets-3737.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | IEC-60134 | NO | SINGLE | 3 | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 120V | 120V | 349W Tc | 70A | 280A | 0.0079Ohm | 386 mJ | N-Channel | 9473pF @ 60V | 7.9m Ω @ 25A, 10V | 4V @ 1mA | 70A Tc | 167nC @ 10V | 10V | ±20V |
