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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BUK762R0-40E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk762r040e118-datasheets-4096.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | GULL WING | 3 | 1 | Single | 1 | R-PSSO-G2 | 29 ns | 36ns | 46 ns | 79 ns | 120A | 20V | 40V | SILICON | DRAIN | SWITCHING | 293W Tc | 0.002Ohm | 40V | N-Channel | 8500pF @ 25V | 2m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 109.2nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHU7N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihu7n60ege3-datasheets-3032.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 329.988449mg | 3 | No | 1 | Single | TO-251 | 680pF | 13 ns | 13ns | 14 ns | 24 ns | 7A | 20V | 600V | 78W Tc | 600mOhm | 600V | N-Channel | 680pF @ 100V | 600mOhm @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 40nC @ 10V | 600 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF380N60E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/onsemiconductor-fcp380n60e-datasheets-8054.pdf | TO-220-3 Full Pack | 10.36mm | 9.19mm | 4.9mm | Lead Free | 12 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 106W | 1 | FET General Purpose Power | 17 ns | 9ns | 10 ns | 64 ns | 10.2A | 20V | 31W Tc | 600V | N-Channel | 1770pF @ 25V | 380m Ω @ 5A, 10V | 3.5V @ 250μA | 10.2A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| TK5Q65W,S1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-251-3 Stub Leads, IPak | 16 Weeks | 5.2A | 650V | 60W Tc | N-Channel | 380pF @ 300V | 1.22 Ω @ 2.6A, 10V | 3.5V @ 170μA | 5.2A Ta | 10.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH10H4M5LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth10h4m5lps13-datasheets-4129.pdf | 8-PowerTDFN | 23 Weeks | not_compliant | e3 | Matte Tin (Sn) | 100V | 2.7W Ta 136W Tc | N-Channel | 4843pF @ 50V | 4.3m Ω @ 30A, 10V | 2.5V @ 250μA | 20A Ta 100A Tc | 80nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RP1E050RPTR | ROHM Semiconductor | $4.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rp1e050rptr-datasheets-4038.pdf | SMD/SMT | 6 | 6 | yes | EAR99 | e2 | TIN COPPER | 2W | DUAL | FLAT | 260 | 6 | 10 | 2W | 1 | Other Transistors | Not Qualified | 850pF | 5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 5A | 20A | 58mOhm | -30V | 50 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC86248 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdmc86248-datasheets-3973.pdf | 8-PowerTDFN | 3.3mm | 1.05mm | 3.3mm | 5 | 13 Weeks | 32.13mg | No SVHC | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | Single | 2.3W | 1 | FET General Purpose Power | S-PDSO-N5 | 6.9 ns | 1.4ns | 2.8 ns | 11 ns | 3.4A | 20V | SILICON | DRAIN | SWITCHING | 150V | 2.3W Ta 36W Tc | MO-240BA | 0.09Ohm | 37 mJ | N-Channel | 525pF @ 75V | 3.2 V | 90m Ω @ 3.4A, 10V | 4V @ 250mA | 3.4A Ta | 9nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| ZDX130N50 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 Full Pack | Lead Free | 3 | 13 Weeks | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 260 | 3 | 10 | 1 | R-PSFM-T3 | 13A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 40W Tc | TO-220AB | 39A | 0.52Ohm | 50 mJ | N-Channel | 2180pF @ 25V | 520m Ω @ 6.5A, 10V | 4.5V @ 1mA | 13A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF614STRRPBF | Vishay Siliconix | $0.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf614strrpbf-datasheets-4053.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 8 Weeks | 1.437803g | 2Ohm | 3 | EAR99 | AVALANCHE RATED | No | e3 | MATTE TIN | GULL WING | 260 | 4 | 1 | Single | 40 | 1 | R-PSSO-G2 | 7 ns | 7.6ns | 7 ns | 16 ns | 2.7A | 20V | SILICON | DRAIN | SWITCHING | 250V | 250V | 3.1W Ta 36W Tc | 8A | N-Channel | 140pF @ 25V | 2 Ω @ 1.6A, 10V | 4V @ 250μA | 2.7A Tc | 8.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| VN0606L-G-P003 | Microchip Technology | $1.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-vn0606lg-datasheets-2551.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | BOTTOM | 1 | 1W | 1 | 330mA | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1W Tc | 3Ohm | 5 pF | 60V | N-Channel | 50pF @ 25V | 3 Ω @ 1A, 10V | 2V @ 1mA | 330mA Tj | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOW11S60 | Alpha & Omega Semiconductor Inc. | $0.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-262-3 Long Leads, I2Pak, TO-262AA | 16 Weeks | No | 178W | 1 | TO-262 | 545pF | 11A | 30V | 600V | 178W Tc | N-Channel | 545pF @ 100V | 399mOhm @ 3.8A, 10V | 4.1V @ 250μA | 11A Tc | 11nC @ 10V | 399 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLI520GPBF | Vishay Siliconix | $1.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irli520gpbf-datasheets-3969.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 8 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220-3 | 490pF | 9.8 ns | 64ns | 27 ns | 21 ns | 7.2A | 10V | 100V | 37W Tc | 270mOhm | 100V | N-Channel | 490pF @ 25V | 270mOhm @ 4.3A, 5V | 2V @ 250μA | 7.2A Tc | 12nC @ 5V | 270 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AOB296L | Alpha & Omega Semiconductor Inc. | $0.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aob296l-datasheets-8172.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | FET General Purpose Power | 70A | Single | 100V | 2.1W Ta 107W Tc | N-Channel | 2785pF @ 50V | 9.7m Ω @ 20A, 10V | 3.4V @ 250μA | 9.5A Ta 70A Tc | 52nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF720LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irf720spbf-datasheets-8875.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.01mm | 4.7mm | 3 | 12 Weeks | 6.000006g | 3 | yes | No | 1 | Single | 1 | 10 ns | 14ns | 13 ns | 30 ns | 3.3A | 20V | SILICON | DRAIN | SWITCHING | 400V | 400V | 3.1W Ta 50W Tc | TO-220AB | N-Channel | 410pF @ 25V | 1.8 Ω @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD7N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd7n60et5ge3-datasheets-2905.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 1.437803g | 3 | No | 1 | Single | D-PAK (TO-252AA) | 680pF | 13 ns | 13ns | 14 ns | 24 ns | 7A | 20V | 600V | 78W Tc | 600mOhm | 600V | N-Channel | 680pF @ 100V | 600mOhm @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 40nC @ 10V | 600 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPAN60R180P7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | 1 (Unlimited) | ROHS3 Compliant | TO-220-3 Full Pack | 18 Weeks | 600V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2803 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/sanken-2sk2803-datasheets-3994.pdf | TO-220-3 Full Pack | 3 | 12 Weeks | yes | UL APPROVED | 8541.29.00.95 | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 3A | SILICON | SINGLE | ISOLATED | 450V | 450V | 30W Tc | TO-220AB | 3A | 12A | 30 mJ | N-Channel | 340pF @ 10V | 2.8 Ω @ 1.5A, 10V | 4V @ 1mA | 3A Ta | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ010NE2LS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ 5 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsz010ne2ls5atma1-datasheets-4003.pdf | 8-PowerTDFN | 18 Weeks | 25V | 2.1W Ta 69W Tc | N-Channel | 3900pF @ 12V | 1m Ω @ 20A, 10V | 2V @ 250μA | 32A Ta 40A Tc | 29nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF11S60L | Alpha & Omega Semiconductor Inc. | $0.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 3 | 18 Weeks | 3 | No | SINGLE | 38W | 1 | FET General Purpose Powers | 11A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 38W Tc | TO-220AB | 45A | N-Channel | 545pF @ 100V | 399m Ω @ 3.8A, 10V | 4.1V @ 250μA | 11A Tc | 11nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP50R520CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp50r520cpxksa1-datasheets-4017.pdf&product=infineontechnologies-ipp50r520cpxksa1-6860168 | TO-220-3 | Lead Free | 3 | 8 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 66W | 1 | Not Qualified | 35 ns | 14ns | 17 ns | 80 ns | 7.1A | 20V | 500V | SILICON | ISOLATED | SWITCHING | 66W Tc | TO-220AB | 15A | 0.52Ohm | 166 mJ | 550V | N-Channel | 680pF @ 100V | 520m Ω @ 3.8A, 10V | 3.5V @ 250μA | 7.1A Tc | 17nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TSM60N600CI C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60n600chc5g-datasheets-0498.pdf | TO-220-3 Full Pack, Isolated Tab | NOT SPECIFIED | NOT SPECIFIED | 600V | 83W Tc | N-Channel | 743pF @ 100V | 600m Ω @ 4A, 10V | 4V @ 250μA | 8A Tc | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ300N15NS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-bsz300n15ns5atma1-datasheets-4005.pdf | 8-PowerTDFN | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | NO LEAD | 1 | S-PDSO-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 62.5W Tc | 32A | 128A | 0.03Ohm | 30 mJ | N-Channel | 950pF @ 75V | 30m Ω @ 16A, 10V | 4.6V @ 32μA | 32A Tc | 13nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S207AKSA4 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80n06s207aksa2-datasheets-8954.pdf | TO-220-3 | 3 | 10 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 55V | 55V | 250W Tc | TO-220AB | 80A | 320A | 0.0066Ohm | 530 mJ | N-Channel | 3400pF @ 25V | 6.6m Ω @ 68A, 10V | 4V @ 180μA | 80A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4413DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~125°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 8-SOIC | P-Channel | 4780pF @ 15V | 5.5mOhm @ 10A, 10V | 1.6V @ 250μA | 114nC @ 10V | 4.5V 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPS1100PW | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1.2mm | 4.4mm | Lead Free | 8 | 12 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | 1mm | EAR99 | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 260 | TPS1100 | 8 | 504mW | 1 | Other Transistors | 4.5 ns | 10ns | 10 ns | 13 ns | 1.27A | 2V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 504mW Ta | 0.4Ohm | 15V | P-Channel | 180m Ω @ 1.5A, 10V | 1.5V @ 250μA | 1.27A Ta | 5.45nC @ 10V | 2.7V 10V | +2V, -15V | |||||||||||||||||||||||||||||||||||||||||
| FQB19N20TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqb19n20tm-datasheets-3844.pdf | 200V | 19.4A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 4 Weeks | 1.31247g | 150mOhm | 3 | ACTIVE (Last Updated: 16 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 3.13W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 190ns | 80 ns | 55 ns | 19.4A | 30V | SILICON | DRAIN | SWITCHING | 3.13W Ta 140W Tc | 78A | 250 mJ | 200V | N-Channel | 1600pF @ 25V | 150m Ω @ 9.7A, 10V | 5V @ 250μA | 19.4A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRF2807STRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irf2807strlpbf-datasheets-0613.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 39 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 230W Tc | 75A | 280A | 0.013Ohm | 340 mJ | N-Channel | 3820pF @ 25V | 13m Ω @ 43A, 10V | 4V @ 250μA | 82A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| TJ80S04M3L(T6L1,NQ | Toshiba Semiconductor and Storage | $0.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 100ns | 300 ns | 80A | 10V | 40V | 100W Tc | P-Channel | 7770pF @ 10V | 5.2m Ω @ 40A, 10V | 3V @ 1mA | 80A Ta | 158nC @ 10V | 6V 10V | +10V, -20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP22M2UPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmp22m2ups13-datasheets-3842.pdf | 8-PowerTDFN | 5 | 23 Weeks | 8 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 60A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 2.3W Ta | 100A | 0.0025Ohm | P-Channel | 12826pF @ 10V | 2.5m Ω @ 25A, 10V | 1.4V @ 250μA | 60A Tc | 476nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF7N60YDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fcpf7n60-datasheets-5101.pdf | TO-220-3 Full Pack, Formed Leads | 10.36mm | 16.07mm | 4.9mm | 3 | 12 Weeks | 2.565g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 31W | 1 | FET General Purpose Power | 35 ns | 55ns | 32 ns | 75 ns | 7A | 30V | SILICON | ISOLATED | SWITCHING | 31W Tc | TO-220AB | 7A | 0.6Ohm | 600V | N-Channel | 920pF @ 25V | 600m Ω @ 3.5A, 10V | 5V @ 250μA | 7A Tc | 30nC @ 10V | 10V | ±30V |
