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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRL3705NSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl3705nstrlpbf-datasheets-5052.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 170W Tc | 89A | 310A | 0.012Ohm | 340 mJ | N-Channel | 3600pF @ 25V | 10m Ω @ 46A, 10V | 2V @ 250μA | 89A Tc | 98nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| FDS6162N7 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | /files/onsemiconductor-fds6162n7-datasheets-0319.pdf | 20V | 23A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | Unknown | 8 | 3W | 25ns | 55 ns | 85 ns | 23A | 12V | 3W Ta | 20V | N-Channel | 5521pF @ 10V | 3.5m Ω @ 23A, 4.5V | 1.5V @ 250μA | 23A Ta | 73nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS4070N7 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fds4070n7-datasheets-0215.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 40V | 3W Ta | N-Channel | 2819pF @ 20V | 7mOhm @ 15.3A, 10V | 5V @ 250μA | 15.3A Ta | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIZ24EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfiz24epbf-datasheets-0328.pdf | 60V | 14A | TO-220-3 Full Pack | Lead Free | No | Single | 29W | 1 | TO-220AB Full-Pak | 370pF | 34ns | 27 ns | 19 ns | 14A | 20V | 60V | 29W Tc | 71MOhm | 60V | N-Channel | 370pF @ 25V | 71mOhm @ 7.8A, 10V | 4V @ 250μA | 14A Tc | 20nC @ 10V | 71 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FDS3170N7 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2003 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fds3170n7-datasheets-0175.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 100V | 3W Ta | N-Channel | 2714pF @ 50V | 26mOhm @ 6.7A, 10V | 4V @ 250μA | 6.7A Ta | 77nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDFS2P102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdfs2p102-datasheets-0181.pdf | -20V | -3.3A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | No SVHC | 8 | 2W | 7ns | 7 ns | 17 ns | 3.3A | 20V | -1.4V | 900mW Ta | -20V | P-Channel | 270pF @ 10V | 125m Ω @ 3.3A, 10V | 2V @ 250μA | 3.3A Ta | 10nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDS4070N3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fds4070n3-datasheets-0183.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 40V | 3W Ta | N-Channel | 2819pF @ 20V | 7.5mOhm @ 15.3A, 10V | 5V @ 250μA | 15.3A Ta | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS2170N7 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2003 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fds2170n7-datasheets-0195.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 200V | 3W Ta | N-Channel | 1292pF @ 100V | 128mOhm @ 3A, 10V | 4.5V @ 250μA | 3A Ta | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDFS6N303 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fdfs6n303-datasheets-0161.pdf | 30V | 6A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | No SVHC | 8 | 2W | 1 | 12ns | 6 ns | 13 ns | 6A | 20V | 1.7V | 900mW Ta | 30V | N-Channel | 350pF @ 15V | 35m Ω @ 6A, 10V | 3V @ 250μA | 6A Ta | 17nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDC697P_F077 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdc697pf077-datasheets-0077.pdf | 6-SSOT Flat-lead, SuperSOT™-6 FLMP | SuperSOT™-6 FLMP | 20V | 2W Ta | P-Channel | 3524pF @ 10V | 20mOhm @ 8A, 4.5V | 1.5V @ 250μA | 8A Ta | 55nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDFS2P103 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdfs2p103-datasheets-0137.pdf | -30V | -5.3A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | No SVHC | 8 | 2W | 1 | 13ns | 9 ns | 14 ns | 5.3A | 25V | 30V | -1.7V | 900mW Ta | -30V | P-Channel | 528pF @ 15V | 59m Ω @ 5.3A, 10V | 3V @ 250μA | 5.3A Ta | 8nC @ 5V | Schottky Diode (Isolated) | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFU12N25DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr12n25dpbf-datasheets-9691.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 250V | 144W Tc | N-Channel | 810pF @ 25V | 260m Ω @ 8.4A, 10V | 5V @ 250μA | 14A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU3705ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irlr3705ztrpbf-datasheets-7722.pdf | 55V | 42A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.223mm | 2.3876mm | Lead Free | 3 | 16 Weeks | 8MOhm | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 130W | 1 | FET General Purpose Power | 17 ns | 150ns | 70 ns | 33 ns | 42A | 16V | SILICON | DRAIN | SWITCHING | 130W Tc | 89A | 55V | N-Channel | 2900pF @ 25V | 8m Ω @ 42A, 10V | 3V @ 250μA | 42A Tc | 66nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||
| FDJ128N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdj128n-datasheets-0138.pdf | 20V | 5.5A | SC75-6 FLMP | Lead Free | No SVHC | 75 | 1.6W | SC75-6 FLMP | 543pF | 5ns | 5 ns | 14 ns | 5.5A | 12V | 20V | 1V | 1.6W Ta | 35mOhm | 20V | N-Channel | 543pF @ 10V | 35mOhm @ 5.5A, 4.5V | 1.5V @ 250μA | 5.5A Ta | 8nC @ 5V | 35 mΩ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| FDS2070N7 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/onsemiconductor-fds2070n7-datasheets-0172.pdf | 150V | 4.1A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | No SVHC | 8 | 3W | 1 | 8-SO | 1.884nF | 6ns | 20 ns | 40 ns | 4.1A | 20V | 150V | 2.6V | 3W Ta | 78mOhm | 150V | N-Channel | 1884pF @ 75V | 78mOhm @ 4.1A, 10V | 4V @ 250μA | 4.1A Ta | 53nC @ 10V | 78 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FCH20N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fch20n60-datasheets-0182.pdf | 600V | 20A | TO-247-3 | Lead Free | 3 | Single | 208W | 1 | 140ns | 65 ns | 230 ns | 20A | 30V | 208W Tc | 600V | N-Channel | 3080pF @ 25V | 190m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 98nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDJ129P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdj129p-datasheets-0165.pdf | SC75-6 FLMP | SC75-6 FLMP | 20V | 1.6W Ta | P-Channel | 780pF @ 10V | 70mOhm @ 4.2A, 4.5V | 1.5V @ 250μA | 4.2A Ta | 6nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDC699P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdc699p-datasheets-0082.pdf | 6-SSOT Flat-lead, SuperSOT™-6 FLMP | SuperSOT™-6 FLMP | 20V | 2W Ta | P-Channel | 2640pF @ 10V | 22mOhm @ 7A, 4.5V | 1.5V @ 250μA | 7A Ta | 38nC @ 5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS2170N3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fds2170n3-datasheets-0191.pdf | 200V | 3A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 3W | 8-SOIC | 1.292nF | 5ns | 23 ns | 30 ns | 3A | 20V | 200V | 3W Ta | 128mOhm | 200V | N-Channel | 1292pF @ 100V | 128mOhm @ 3A, 10V | 4.5V @ 250μA | 3A Ta | 36nC @ 10V | 128 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRL3705NLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3705nstrlpbf-datasheets-5052.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 55V | 3.8W Ta 170W Tc | N-Channel | 3600pF @ 25V | 10mOhm @ 46A, 10V | 2V @ 250μA | 89A Tc | 98nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRC730PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irc730pbf-datasheets-0095.pdf | TO-220-5 | 10.67mm | 9.02mm | 4.83mm | 5 | 3.000003g | unknown | e3 | MATTE TIN | SINGLE | 260 | 5 | 1 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T5 | 18 ns | 15ns | 14 ns | 38 ns | 5.5A | 20V | SILICON | SINGLE | DRAIN | SWITCHING | 74W Tc | 22A | 1Ohm | 400V | N-Channel | 700pF @ 25V | 1 Ω @ 3.3A, 10V | 4V @ 250μA | 5.5A Tc | 38nC @ 10V | Current Sensing | 10V | ±20V | ||||||||||||||||||||||||||||||
| IRLU7833PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irlr7833trlpbf-datasheets-1586.pdf | 30V | 140A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | Single | 140W | I-PAK | 4.01nF | 6.9ns | 23 ns | 140A | 20V | 30V | 140W Tc | 5.5mOhm | 30V | N-Channel | 4010pF @ 15V | 4.5mOhm @ 15A, 10V | 2.3V @ 250μA | 140A Tc | 50nC @ 4.5V | 4.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRLU3714PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3714trlpbf-datasheets-7351.pdf | 20V | 36A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | No SVHC | 20mOhm | 3 | Single | 47W | 1 | I-PAK | 670pF | 78ns | 4.5 ns | 10 ns | 36A | 20V | 20V | 20V | 3V | 47W Tc | 28mOhm | 20V | N-Channel | 670pF @ 10V | 3 V | 20mOhm @ 18A, 10V | 3V @ 250μA | 36A Tc | 9.7nC @ 4.5V | 20 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF640NSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf640nstrlpbf-datasheets-9047.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | EAR99 | 200V | 150W Tc | N-Channel | 1160pF @ 25V | 150m Ω @ 11A, 10V | 4V @ 250μA | 18A Tc | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDFS2P103A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdfs2p103a-datasheets-0090.pdf | -30V | -5.3A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | No SVHC | 8 | 2W | 1 | 16ns | 10 ns | 15 ns | 5.3A | 25V | 30V | -1.8V | 900mW Ta | -30V | P-Channel | 535pF @ 15V | 59m Ω @ 5.3A, 10V | 3V @ 250μA | 5.3A Ta | 8nC @ 5V | Schottky Diode (Isolated) | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRL3502SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | /files/infineontechnologies-irl3502strrpbf-datasheets-7471.pdf | 20V | 110A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 3 | No | Single | 140W | D2PAK | 4.7nF | 10 ns | 140ns | 130 ns | 96 ns | 110A | 10V | 20V | 140W Tc | 7mOhm | 20V | N-Channel | 4700pF @ 15V | 7mOhm @ 64A, 7V | 700mV @ 250μA | 110A Tc | 110nC @ 4.5V | 7 mΩ | 4.5V 7V | ±10V | ||||||||||||||||||||||||||||||||||||||
| IRFSL17N20DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 200V | 3.8W Ta 140W Tc | N-Channel | 1100pF @ 25V | 170mOhm @ 9.8A, 10V | 5.5V @ 250μA | 16A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3303LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3303spbf-datasheets-8940.pdf | 30V | 38A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 68W | TO-262 | 870pF | 200ns | 38A | 16V | 30V | 3.8W Ta 68W Tc | 40mOhm | 30V | N-Channel | 870pF @ 25V | 26mOhm @ 20A, 10V | 1V @ 250μA | 38A Tc | 26nC @ 4.5V | 26 mΩ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFBA22N50APBF | Vishay Siliconix | $2.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfba22n50apbf-datasheets-0053.pdf | 500V | 24A | Super-220™ | Lead Free | 3 | No SVHC | 230Ohm | 3 | AVALANCHE RATED | unknown | e3 | MATTE TIN | 260 | 3 | Single | 40 | 340W | 1 | FET General Purpose Power | Not Qualified | 66ns | 44 ns | 46 ns | 24A | 30V | 500V | SILICON | DRAIN | SWITCHING | 340W Tc | 96A | 500V | N-Channel | 3400pF @ 25V | 4 V | 230m Ω @ 13.8A, 10V | 4V @ 250μA | 24A Tc | 115nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IRFS31N20DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfb31n20dpbf-datasheets-2062.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 3.1W Ta 200W Tc | 31A | 124A | 0.082Ohm | 420 mJ | N-Channel | 2370pF @ 25V | 82m Ω @ 18A, 10V | 5.5V @ 250μA | 31A Tc | 107nC @ 10V | 10V | ±30V |
