Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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IRFB17N60KPBF | Vishay Siliconix | $1.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfb17n60k-datasheets-5318.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 1 | Single | 340W | 1 | TO-220AB | 2.7nF | 25 ns | 82ns | 32 ns | 38 ns | 17A | 30V | 600V | 340W Tc | 420mOhm | N-Channel | 2700pF @ 25V | 420mOhm @ 10A, 10V | 5V @ 250μA | 17A Tc | 99nC @ 10V | 420 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
IRFZ48ZLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfz48zpbf-datasheets-8463.pdf | 55V | 61A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 91W | 1 | TO-262 | 1.72nF | 15 ns | 69ns | 35 ns | 61A | 20V | 55V | 91W Tc | 55V | N-Channel | 1720pF @ 25V | 11mOhm @ 37A, 10V | 4V @ 250μA | 61A Tc | 64nC @ 10V | 11 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
IRFU3711PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3711trpbf-datasheets-1707.pdf | 20V | 110A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | No | 120W | IPAK (TO-251) | 2.98nF | 12 ns | 220ns | 12 ns | 17 ns | 100A | 20V | 20V | 2.5W Ta 120W Tc | 8.5mOhm | 20V | N-Channel | 2980pF @ 10V | 6.5mOhm @ 15A, 10V | 3V @ 250μA | 100A Tc | 44nC @ 4.5V | 6.5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IRLU120PBF | Vishay Siliconix | $0.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlr120trlpbf-datasheets-9045.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | 3 | 329.988449mg | 3 | yes | EAR99 | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | 9.8 ns | 64ns | 27 ns | 21 ns | 7.7A | 10V | SILICON | DRAIN | SWITCHING | 100V | 2.5W Ta 42W Tc | 0.27Ohm | N-Channel | 490pF @ 25V | 270m Ω @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 12nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||
IRFL4315PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1999 | /files/infineontechnologies-irfl4315trpbf-datasheets-9263.pdf | TO-261-4, TO-261AA | EAR99 | 150V | 2.8W Ta | N-Channel | 420pF @ 25V | 185m Ω @ 1.6A, 10V | 5V @ 250μA | 2.6A Ta | 19nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7326D2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineon-irf7326d2pbf-datasheets-7213.pdf | -30V | -3.6A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | No SVHC | 8 | No | 2W | 1 | 8-SO | 440pF | 17ns | 18 ns | 25 ns | -3.6A | 20V | 30V | -1V | 2W Ta | 160mOhm | -30V | P-Channel | 440pF @ 25V | 100mOhm @ 1.8A, 10V | 1V @ 250μA | 3.6A Ta | 25nC @ 10V | Schottky Diode (Isolated) | 100 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
FDC3616N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdc3616n-datasheets-0036.pdf | 6-SSOT Flat-lead, SuperSOT™-6 FLMP | SuperSOT™-6 FLMP | 100V | 2W Ta | N-Channel | 1215pF @ 50V | 70mOhm @ 3.7A, 10V | 4V @ 250μA | 3.7A Ta | 32nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDC6392S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fdc6392s-datasheets-0014.pdf | -20V | -2.2A | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 36mg | 6 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 960mW | 1 | Other Transistors | 8 ns | 11ns | 11 ns | 13 ns | 2.2A | 12V | SILICON | SWITCHING | 20V | 960mW Ta | -20V | P-Channel | 369pF @ 10V | 150m Ω @ 2.2A, 4.5V | 1.5V @ 250μA | 2.2A Ta | 5.2nC @ 4.5V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
IRFSL17N20DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 200V | 3.8W Ta 140W Tc | N-Channel | 1100pF @ 25V | 170mOhm @ 9.8A, 10V | 5.5V @ 250μA | 16A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL3303LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3303spbf-datasheets-8940.pdf | 30V | 38A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 68W | TO-262 | 870pF | 200ns | 38A | 16V | 30V | 3.8W Ta 68W Tc | 40mOhm | 30V | N-Channel | 870pF @ 25V | 26mOhm @ 20A, 10V | 1V @ 250μA | 38A Tc | 26nC @ 4.5V | 26 mΩ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IRFBA22N50APBF | Vishay Siliconix | $2.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfba22n50apbf-datasheets-0053.pdf | 500V | 24A | Super-220™ | Lead Free | 3 | No SVHC | 230Ohm | 3 | AVALANCHE RATED | unknown | e3 | MATTE TIN | 260 | 3 | Single | 40 | 340W | 1 | FET General Purpose Power | Not Qualified | 66ns | 44 ns | 46 ns | 24A | 30V | 500V | SILICON | DRAIN | SWITCHING | 340W Tc | 96A | 500V | N-Channel | 3400pF @ 25V | 4 V | 230m Ω @ 13.8A, 10V | 4V @ 250μA | 24A Tc | 115nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
IRFS31N20DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfb31n20dpbf-datasheets-2062.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 3.1W Ta 200W Tc | 31A | 124A | 0.082Ohm | 420 mJ | N-Channel | 2370pF @ 25V | 82m Ω @ 18A, 10V | 5.5V @ 250μA | 31A Tc | 107nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
IRLU4343PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr4343pbf-datasheets-9345.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 55V | 79W Tc | N-Channel | 740pF @ 50V | 50m Ω @ 4.7A, 10V | 1V @ 250μA | 26A Tc | 42nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL2203NLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl2203nstrlpbf-datasheets-4378.pdf | 30V | 116A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | No | 170W | 1 | TO-262 | 3.29nF | 11 ns | 160ns | 66 ns | 23 ns | 116A | 16V | 30V | 3.8W Ta 180W Tc | 10mOhm | 30V | N-Channel | 3290pF @ 25V | 7mOhm @ 60A, 10V | 3V @ 250μA | 116A Tc | 60nC @ 4.5V | 7 mΩ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
IRFZ48NLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfz48nstrlpbf-datasheets-8663.pdf | 55V | 64A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | No | 140W | 1 | TO-262 | 1.97nF | 12 ns | 78ns | 50 ns | 34 ns | 64A | 20V | 55V | 3.8W Ta 130W Tc | 14mOhm | 55V | N-Channel | 1970pF @ 25V | 14mOhm @ 32A, 10V | 4V @ 250μA | 64A Tc | 81nC @ 10V | 14 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IRL3803LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3803strlpbf-datasheets-5116.pdf | 30V | 140A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | No SVHC | 3 | No | 200W | 14 ns | 230ns | 35 ns | 29 ns | 140A | 16V | 3.8W Ta 200W Tc | 30V | N-Channel | 5000pF @ 25V | 1 V | 6m Ω @ 71A, 10V | 1V @ 250μA | 140A Tc | 140nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||
IRC630PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irc630pbf-datasheets-9925.pdf | TO-220-5 | 5 | 9A | 200V | 74W Tc | N-Channel | 800pF @ 25V | 400m Ω @ 5.4A, 10V | 4V @ 250μA | 9A Tc | 43nC @ 10V | Current Sensing | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF640LPBF | Vishay Siliconix | $0.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf640spbf-datasheets-2368.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.65mm | 4.7mm | 2.387001g | 3 | No | 1 | Single | 130W | 1 | TO-262-3 | 1.3nF | 14 ns | 51ns | 36 ns | 45 ns | 18A | 20V | 200V | 3.1W Ta 130W Tc | 180mOhm | 200V | N-Channel | 1300pF @ 25V | 180mOhm @ 11A, 10V | 4V @ 250μA | 18A Tc | 70nC @ 10V | 180 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IRL1004LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl1004spbf-datasheets-9027.pdf | 40V | 130A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.54mm | Lead Free | 3 | 150W | 1 | TO-262 | 5.33nF | 16 ns | 210ns | 25 ns | 130A | 16V | 40V | 3.8W Ta 200W Tc | 9mOhm | 40V | N-Channel | 5330pF @ 25V | 6.5mOhm @ 78A, 10V | 1V @ 250μA | 130A Tc | 100nC @ 4.5V | 6.5 mΩ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
IRL3402SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3402spbf-datasheets-9934.pdf | 20V | 85A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3 | Single | 110W | D2PAK | 3.3nF | 140ns | 120 ns | 80 ns | 85A | 10V | 20V | 110W Tc | 10mOhm | 20V | N-Channel | 3300pF @ 15V | 8mOhm @ 51A, 7V | 700mV @ 250μA | 85A Tc | 78nC @ 4.5V | 8 mΩ | 4.5V 7V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||
IRC634PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irc634pbf-datasheets-9938.pdf | 250V | 8.1A | TO-220-5 | 10.67mm | 9.02mm | 4.83mm | Lead Free | 5 | 3.000003g | EAR99 | unknown | SINGLE | 260 | 5 | 1 | 40 | 74W | 1 | Not Qualified | R-PSFM-T5 | 9.6 ns | 21ns | 19 ns | 42 ns | 8.1A | 20V | SILICON | SINGLE | DRAIN | SWITCHING | 74W Tc | 32A | 0.45Ohm | 250V | N-Channel | 770pF @ 25V | 450m Ω @ 4.9A, 10V | 4V @ 250μA | 8.1A Tc | 41nC @ 10V | Current Sensing | 10V | ±20V | |||||||||||||||||||||||||||||||
IRC830PBF | Vishay Siliconix | $2.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irc830pbf-datasheets-9945.pdf | TO-220-5 | 10.67mm | 9.02mm | 4.83mm | 5 | 3.000003g | unknown | SINGLE | 260 | 5 | 1 | 40 | 1 | Not Qualified | R-PSFM-T5 | 8.2 ns | 16ns | 16 ns | 42 ns | 4.5A | 20V | SILICON | SINGLE | DRAIN | SWITCHING | 74W Tc | 280 mJ | 500V | N-Channel | 610pF @ 25V | 1.5 Ω @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 38nC @ 10V | Current Sensing | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IRFI744GPBF | Vishay Siliconix | $0.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi744g-datasheets-8677.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 6.000006g | Unknown | 3 | 1 | Single | TO-220-3 | 1.4nF | 8.7 ns | 28ns | 27 ns | 58 ns | 4.9A | 20V | 450V | 4V | 40W Tc | 630mOhm | N-Channel | 1400pF @ 25V | 630mOhm @ 2.9A, 10V | 4V @ 250μA | 4.9A Tc | 80nC @ 10V | 630 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IRFU3504ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3504ztrpbf-datasheets-7073.pdf | 40V | 42A | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.1mm | 2.3mm | Lead Free | No SVHC | 3 | No | Single | 90W | 15 ns | 74ns | 38 ns | 30 ns | 77A | 20V | 4V | 90W Tc | 27 ns | 40V | N-Channel | 1510pF @ 25V | 9m Ω @ 42A, 10V | 4V @ 250μA | 42A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IRLU3714ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3714zpbf-datasheets-9174.pdf | 20V | 37A | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.1mm | 2.3mm | Lead Free | 15MOhm | 3 | No | 35W | I-PAK | 560pF | 5.4 ns | 7.6ns | 4.3 ns | 9.2 ns | 37A | 20V | 20V | 35W Tc | 32 ns | 25mOhm | 20V | N-Channel | 560pF @ 10V | 15mOhm @ 15A, 10V | 2.55V @ 250μA | 37A Tc | 7.1nC @ 4.5V | 15 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRFU3704PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-944156pbf-datasheets-7077.pdf | 20V | 62A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | No SVHC | 9.5Ohm | 4 | 90W | 1 | IPAK (TO-251) | 1.996nF | 98 ns | 98ns | 5 ns | 62A | 20V | 20V | 20V | 3V | 90W Tc | 14mOhm | 20V | N-Channel | 1996pF @ 10V | 3 V | 9.5mOhm @ 15A, 10V | 3V @ 250μA | 75A Tc | 19nC @ 4.5V | 9.5 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IRFU120ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | /files/infineontechnologies-irfr120ztrpbf-datasheets-7471.pdf | 100V | 8.7A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | No SVHC | 190MOhm | 3 | No | 35W | IPAK (TO-251) | 310pF | 8.3 ns | 26ns | 23 ns | 27 ns | 8.7A | 20V | 100V | 100V | 4V | 35W Tc | 36 ns | 190mOhm | 100V | N-Channel | 310pF @ 25V | 4 V | 190mOhm @ 5.2A, 10V | 4V @ 250μA | 8.7A Tc | 10nC @ 10V | 190 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRFI734GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi734gpbf-datasheets-9976.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 6.000006g | 3 | 1 | Single | 35W | 1 | TO-220-3 | 680pF | 5.9 ns | 22ns | 21 ns | 40 ns | 3.4A | 20V | 450V | 35W Tc | 1.2Ohm | N-Channel | 680pF @ 25V | 1.2Ohm @ 2A, 10V | 4V @ 250μA | 3.4A Tc | 45nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRFSL23N15DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfb23n15dpbf-datasheets-2965.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | compliant | NOT SPECIFIED | NOT SPECIFIED | 150V | 3.8W Ta 136W Tc | N-Channel | 1200pF @ 25V | 90m Ω @ 14A, 10V | 5.5V @ 250μA | 23A Tc | 56nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRL3103LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3103strlpbf-datasheets-9763.pdf | 30V | 64A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | No SVHC | 12MOhm | 3 | EAR99 | No | Single | 110W | 8.9 ns | 120ns | 9.1 ns | 14 ns | 64A | 16V | 94W Tc | 30V | N-Channel | 1650pF @ 25V | 1 V | 12m Ω @ 34A, 10V | 1V @ 250μA | 64A Tc | 33nC @ 4.5V | 4.5V 10V | ±16V |
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