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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Lead Length | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRLU2703PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/infineontechnologies-irlr2703trpbf-datasheets-1386.pdf | 30V | 23A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | 3 | 13 Weeks | No SVHC | 45mOhm | 3 | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 260 | 30 | 38W | 1 | FET General Purpose Power | 8.5 ns | 140ns | 20 ns | 12 ns | 23A | 16V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1V | 45W Tc | 96A | 77 mJ | 30V | N-Channel | 450pF @ 25V | 1 V | 45m Ω @ 14A, 10V | 1V @ 250μA | 23A Tc | 15nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||
| IRLR014NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr014npbf-datasheets-9403.pdf | 55V | 10A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | No SVHC | 140mOhm | 4 | Single | 28W | 1 | D-Pak | 265pF | 6.5 ns | 47ns | 23 ns | 12 ns | 10A | 16V | 55V | 55V | 1V | 28W Tc | 140mOhm | 55V | N-Channel | 265pF @ 25V | 1 V | 140mOhm @ 6A, 10V | 1V @ 250μA | 10A Tc | 7.9nC @ 5V | 140 mΩ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| IRFU3303PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3303trpbf-datasheets-8180.pdf | 30V | 33A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | 3 | No | Single | 57W | IPAK (TO-251) | 750pF | 11 ns | 99ns | 28 ns | 16 ns | 33A | 20V | 30V | 57W Tc | 31mOhm | 30V | N-Channel | 750pF @ 25V | 31mOhm @ 18A, 10V | 4V @ 250μA | 33A Tc | 29nC @ 10V | 31 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFU3710ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | 100V | 42A | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.1mm | 2.3mm | Lead Free | 3 | No SVHC | 18MOhm | 3 | 2.28mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | 9.65mm | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | 14 ns | 43ns | 42 ns | 53 ns | 42A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 140W Tc | 53 ns | 56A | 220A | 150 mJ | 100V | N-Channel | 2930pF @ 25V | 4 V | 18m Ω @ 33A, 10V | 4V @ 250μA | 42A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IRF3205SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irf3205strlpbf-datasheets-3553.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 52 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 200W Tc | 75A | 390A | 0.008Ohm | 264 mJ | N-Channel | 3247pF @ 25V | 8m Ω @ 62A, 10V | 4V @ 250μA | 110A Tc | 146nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRL1404LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl1404strlpbf-datasheets-9541.pdf | 40V | 160A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 3 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | SINGLE | 3.8W | 1 | 270ns | 160A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.8W Ta 200W Tc | 640A | 0.004Ohm | 520 mJ | 40V | N-Channel | 6600pF @ 25V | 4m Ω @ 95A, 10V | 3V @ 250μA | 160A Tc | 140nC @ 5V | 4.3V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRL1404SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl1404strlpbf-datasheets-9541.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3.8W Ta 200W Tc | 160A | 640A | 0.004Ohm | 520 mJ | N-Channel | 6600pF @ 25V | 4m Ω @ 95A, 10V | 3V @ 250μA | 160A Tc | 140nC @ 5V | 4.3V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRLR4343PBF | Infineon Technologies | $4.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr4343pbf-datasheets-9345.pdf | 55V | 26A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.2606mm | 6.22mm | Lead Free | 3 | Single | 79W | D-Pak | 740pF | 5.7 ns | 19ns | 5.3 ns | 23 ns | 26A | 20V | 55V | 79W Tc | 65mOhm | 55V | N-Channel | 740pF @ 50V | 50mOhm @ 4.7A, 10V | 1V @ 250μA | 26A Tc | 42nC @ 10V | 50 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFU4105ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irfr4105ztrpbf-datasheets-1035.pdf | 55V | 30A | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.1mm | 2.3mm | Lead Free | 3 | 15 Weeks | No SVHC | 3 | 2.28mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | 9.65mm | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 48W | 1 | FET General Purpose Power | 10 ns | 40ns | 24 ns | 26 ns | 30A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 48W Tc | 29 ns | 120A | 0.0245Ohm | 29 mJ | 55V | N-Channel | 740pF @ 25V | 4 V | 24.5m Ω @ 18A, 10V | 4V @ 250μA | 30A Tc | 27nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IRLU024ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlu024zpbf-datasheets-9358.pdf | 55V | 16A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | No SVHC | 58MOhm | 3 | No | Single | 35mW | 1 | I-PAK | 380pF | 8.2 ns | 43ns | 16 ns | 19 ns | 16A | 16V | 55V | 55V | 35W Tc | 58mOhm | 55V | N-Channel | 380pF @ 25V | 3 V | 58mOhm @ 9.6A, 10V | 3V @ 250μA | 16A Tc | 9.9nC @ 5V | 58 mΩ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
| IRLR024ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2000 | /files/infineontechnologies-irlu024zpbf-datasheets-9358.pdf | 55V | 16A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.2606mm | 6.22mm | Lead Free | No SVHC | 58MOhm | 3 | No | Single | 35W | D-Pak | 380pF | 8.2 ns | 43ns | 16 ns | 19 ns | 16A | 16V | 55V | 55V | 3V | 35W Tc | 24 ns | 100mOhm | 55V | N-Channel | 380pF @ 25V | 3 V | 58mOhm @ 9.6A, 10V | 3V @ 250μA | 16A Tc | 9.9nC @ 5V | 58 mΩ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| IRFU3707PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3707pbf-datasheets-7053.pdf | 30V | 61A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | No SVHC | 13Ohm | 4 | Single | 87W | 1 | IPAK (TO-251) | 1.99nF | 78 ns | 78ns | 3.3 ns | 11.8 ns | 61A | 20V | 30V | 30V | 3V | 87W Tc | 17.5mOhm | 30V | N-Channel | 1990pF @ 15V | 3 V | 13mOhm @ 15A, 10V | 3V @ 250μA | 61A Tc | 19nC @ 4.5V | 13 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFU9120NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1998 | /files/infineontechnologies-irfr9120ntrpbf-datasheets-6833.pdf | -100V | -6.6A | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | 3 | No SVHC | 480MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 39W | 1 | Other Transistors | 14 ns | 47ns | 31 ns | 28 ns | -6.6A | 20V | -100V | SILICON | DRAIN | SWITCHING | 100V | 40W Tc | 6.5A | 26A | -100V | P-Channel | 350pF @ 25V | -4 V | 480m Ω @ 3.9A, 10V | 4V @ 250μA | 6.6A Tc | 27nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF2807ZSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irf2807zpbf-datasheets-8787.pdf | 75V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | No SVHC | 9.4mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 170W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 79ns | 45 ns | 40 ns | 75A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4V | 170W Tc | 89A | 75V | N-Channel | 3270pF @ 25V | 4 V | 9.4m Ω @ 53A, 10V | 4V @ 250μA | 75A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IRL2505SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irl2505strlpbf-datasheets-5505.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 200W Tc | 104A | 360A | 0.01Ohm | 500 mJ | N-Channel | 5000pF @ 25V | 8m Ω @ 54A, 10V | 2V @ 250μA | 104A Tc | 130nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFIZ46NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfiz46npbf-datasheets-9296.pdf | 55V | 31A | TO-220-3 Full Pack | 10.6172mm | 9.8mm | 4.826mm | Lead Free | No SVHC | 3 | No | Single | 40W | TO-220AB Full-Pak | 1.5nF | 2.5kV | 12 ns | 80ns | 52 ns | 43 ns | 33A | 20V | 55V | 4V | 45W Tc | 20mOhm | 55V | N-Channel | 1500pF @ 25V | 4 V | 20mOhm @ 19A, 10V | 4V @ 250μA | 33A Tc | 61nC @ 10V | 20 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRC640PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irc640pbf-datasheets-9303.pdf | TO-220-5 | 10.67mm | 9.02mm | 4.83mm | 5 | 3.000003g | EAR99 | unknown | SINGLE | 260 | 5 | 1 | 40 | 1 | Not Qualified | R-PSFM-T5 | 14 ns | 51ns | 36 ns | 45 ns | 18A | 20V | SILICON | SINGLE | DRAIN | SWITCHING | 200V | 200V | 125W Tc | 72A | 430 mJ | N-Channel | 1300pF @ 25V | 180m Ω @ 11A, 10V | 4V @ 250μA | 18A Tc | 70nC @ 10V | Current Sensing | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRLR3715PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2001 | 20V | 54A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | No SVHC | 14MOhm | 4 | 71W | 1 | D-Pak | 1.06nF | 73ns | 54A | 20V | 20V | 3V | 3.8W Ta 71W Tc | 20mOhm | 20V | N-Channel | 1060pF @ 10V | 14mOhm @ 26A, 10V | 3V @ 250μA | 54A Tc | 17nC @ 4.5V | 14 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL2910SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2003 | /files/infineontechnologies-irl2910strlpbf-datasheets-9108.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | EAR99 | 100V | 3.8W Ta 200W Tc | N-Channel | 3700pF @ 25V | 26m Ω @ 29A, 10V | 2V @ 250μA | 55A Tc | 140nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIB8N50KPBF | Vishay Siliconix | $1.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfib8n50kpbf-datasheets-9318.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 3 | 6.000006g | Unknown | 3 | EAR99 | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | Not Qualified | 17 ns | 16ns | 8.4 ns | 28 ns | 6.7A | 30V | SILICON | SWITCHING | 500V | 500V | 5V | 45W Tc | TO-220AB | 27A | 290 mJ | N-Channel | 2160pF @ 25V | 350m Ω @ 4A, 10V | 5V @ 250μA | 6.7A Tc | 89nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IRLI3803PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irli3803pbf-datasheets-9320.pdf | 30V | 67A | TO-220-3 Full Pack | 10.6172mm | 16.12mm | 4.826mm | Lead Free | No SVHC | 6MOhm | 3 | No | Single | 48W | 1 | TO-220AB Full-Pak | 5nF | 14 ns | 230ns | 35 ns | 29 ns | 76A | 16V | 30V | 63W Tc | 9mOhm | 30V | N-Channel | 5000pF @ 25V | 1 V | 6mOhm @ 40A, 10V | 1V @ 250μA | 76A Tc | 140nC @ 4.5V | 6 mΩ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| IRFI1010NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irfi1010npbf-datasheets-9329.pdf&product=infineontechnologies-irfi1010npbf-6859031 | 55V | 49A | TO-220-3 Full Pack | 10.6172mm | 9.8mm | 4.826mm | Lead Free | 3 | 14 Weeks | No SVHC | 12mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | NOT SPECIFIED | Single | NOT SPECIFIED | 47W | 1 | FET General Purpose Power | Not Qualified | 11 ns | 66ns | 46 ns | 40 ns | 49A | 20V | SILICON | ISOLATED | SWITCHING | 4V | 58W Tc | TO-220AB | 44A | 290A | 55V | N-Channel | 2900pF @ 25V | 12m Ω @ 26A, 10V | 4V @ 250μA | 49A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRLU3715PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | 20V | 54A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 71W | I-PAK | 1.06nF | 73ns | 54A | 20V | 20V | 3.8W Ta 71W Tc | 20mOhm | 20V | N-Channel | 1060pF @ 10V | 14mOhm @ 26A, 10V | 3V @ 250μA | 54A Tc | 17nC @ 4.5V | 14 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3303PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3303pbf-datasheets-9247.pdf | 30V | 34A | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Lead Free | No SVHC | 26MOhm | 3 | 2.54mm | Single | 56W | TO-220AB | 870pF | 7.4 ns | 200ns | 36 ns | 14 ns | 38A | 16V | 30V | 30V | 1V | 68W Tc | 40mOhm | 30V | N-Channel | 870pF @ 25V | 1 V | 26mOhm @ 20A, 10V | 1V @ 250μA | 38A Tc | 26nC @ 4.5V | 26 mΩ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
| IRLBA1304PPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 1999 | TO-273AA | 40V | 300W Tc | N-Channel | 7660pF @ 25V | 4m Ω @ 110A, 10V | 1V @ 250μA | 185A Tc | 140nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLI2203NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irli2203npbf-datasheets-9257.pdf | 30V | 61A | TO-220-3 Full Pack | Lead Free | No SVHC | 7MOhm | 3 | 47W | 1 | TO-220AB Full-Pak | 3.5nF | 2kV | 15 ns | 210ns | 29 ns | 61A | 16V | 30V | 30V | 1V | 47W Tc | 7mOhm | 30V | N-Channel | 3500pF @ 25V | 1 V | 7mOhm @ 37A, 10V | 1V @ 250μA | 61A Tc | 110nC @ 4.5V | 7 mΩ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| IRC540PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irc540pbf-datasheets-9263.pdf | 100V | 28A | TO-220-5 | 10.67mm | 9.02mm | 4.83mm | Lead Free | 3.000003g | 1 | 150W | 1 | TO-220-5 | 1.3nF | 13 ns | 77ns | 48 ns | 40 ns | 28A | 20V | 100V | 150W Tc | 77mOhm | 100V | N-Channel | 1300pF @ 25V | 77mOhm @ 17A, 10V | 4V @ 250μA | 28A Tc | 69nC @ 10V | Current Sensing | 77 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFR3704ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irfr3704zpbf-datasheets-9266.pdf | 20V | 60A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.26mm | 6.22mm | Lead Free | 2 | No SVHC | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 48W | 1 | FET General Purpose Power | R-PSSO-G2 | 41 ns | 8.9ns | 12 ns | 4.9 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 2.1V | 48W Tc | TO-252AA | 19 ns | 240A | 0.0084Ohm | 20V | N-Channel | 1190pF @ 10V | 8.4m Ω @ 15A, 10V | 2.55V @ 250μA | 60A Tc | 14nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF1405LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | /files/infineontechnologies-irf1405strlpbf-datasheets-5286.pdf | 55V | 131A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | No | 200W | 1 | TO-262 | 5.48nF | 13 ns | 190ns | 110 ns | 130 ns | 131A | 20V | 55V | 200W Tc | 5.3mOhm | 55V | N-Channel | 5480pF @ 25V | 5.3mOhm @ 101A, 10V | 4V @ 250μA | 131A Tc | 260nC @ 10V | 5.3 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRLR3714ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3714zpbf-datasheets-9174.pdf | 20V | 37A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.26mm | 6.22mm | Lead Free | No SVHC | 3 | No | Single | 35mW | 1 | D-Pak | 560pF | 5.4 ns | 7.6ns | 4.3 ns | 9.2 ns | 37A | 20V | 20V | 2.1V | 35W Tc | 32 ns | 25mOhm | 20V | N-Channel | 560pF @ 10V | 15mOhm @ 15A, 10V | 2.55V @ 250μA | 37A Tc | 7.1nC @ 4.5V | 15 mΩ | 4.5V 10V | ±20V |
