Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Current | Forward Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Row Spacing | Threshold Voltage | Power Dissipation-Max | Max Forward Surge Current (Ifsm) | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF7422D2PBF | Infineon Technologies | $0.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7422d2pbf-datasheets-7128.pdf | -20V | -4.3A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | No SVHC | 8 | EAR99 | No | Single | 2W | 1 | Other Transistors | 4A | 520mV | 8.1 ns | 26ns | 33 ns | 26 ns | -4.3A | 12V | -20V | 20V | 4V | 2W Ta | 20A | 4.6A | -20V | P-Channel | 610pF @ 15V | 4 V | 90m Ω @ 2.2A, 4.5V | 700mV @ 250μA | 4.3A Ta | 22nC @ 4.5V | Schottky Diode (Isolated) | 2.7V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| IRF3711ZS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20V | 79W Tc | N-Channel | 2150pF @ 10V | 6m Ω @ 15A, 10V | 2.45V @ 250μA | 92A Tc | 24nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR2405PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfu2405pbf-datasheets-7533.pdf | 55V | 56A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Contains Lead, Lead Free | 52 Weeks | No SVHC | 3 | EAR99 | Tin | No | Single | 110W | 1 | 15 ns | 130ns | 78 ns | 55 ns | 56A | 20V | 55V | 4V | 110W Tc | 93 ns | 55V | N-Channel | 2430pF @ 25V | 4 V | 16m Ω @ 34A, 10V | 4V @ 250μA | 56A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3706PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3706pbf-datasheets-7064.pdf | 20V | 75A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | No SVHC | 9MOhm | 3 | No | Single | 88W | 1 | D-Pak | 2.41nF | 6.8 ns | 87ns | 4.8 ns | 17 ns | 75A | 12V | 20V | 20V | 2V | 88W Tc | 11mOhm | 20V | N-Channel | 2410pF @ 10V | 2 V | 9mOhm @ 15A, 10V | 2V @ 250μA | 75A Tc | 35nC @ 4.5V | 9 mΩ | 2.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFR2905ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr2905ztrpbf-datasheets-5307.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 110W Tc | TO-252AA | 42A | 240A | 0.0145Ohm | 82 mJ | N-Channel | 1380pF @ 25V | 14.5m Ω @ 36A, 10V | 4V @ 250μA | 42A Tc | 44nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| 94-4156PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-944156pbf-datasheets-7077.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20V | 90W Tc | N-Channel | 1996pF @ 10V | 9.5m Ω @ 15A, 10V | 3V @ 250μA | 75A Tc | 19nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7477PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irf7477pbf-datasheets-7081.pdf | 30V | 14A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | No SVHC | 8.5MOhm | 8 | EAR99 | No | 2.5W | 1 | 12 ns | 9.8ns | 5.9 ns | 19 ns | 14A | 20V | 30V | 6.3 mm | 2.5W Ta | 30V | N-Channel | 2710pF @ 15V | 2.5 V | 8.5m Ω @ 14A, 10V | 2.5V @ 250μA | 14A Ta | 38nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFL210PBF | Vishay Siliconix | $0.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfl210trpbf-datasheets-8841.pdf | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 250.212891mg | Unknown | 1.5Ohm | 3 | 96A | 200V | 1 | 2W | 1 | SOT-223 | 140pF | 8.2 ns | 17ns | 8.9 ns | 14 ns | 960mA | 20V | 200V | 4V | 2W Ta 3.1W Tc | 1.5Ohm | 200V | N-Channel | 140pF @ 25V | 4 V | 1.5Ohm @ 580mA, 10V | 4V @ 250μA | 960mA Tc | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFR310TRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr310trpbf-datasheets-0789.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 1.437803g | 3 | No | 1 | Single | D-Pak | 170pF | 7.9 ns | 9.9ns | 11 ns | 21 ns | 1.7A | 20V | 400V | 2.5W Ta 25W Tc | 3.6Ohm | 400V | N-Channel | 170pF @ 25V | 3.6Ohm @ 1A, 10V | 4V @ 250μA | 1.7A Tc | 12nC @ 10V | 3.6 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFL214PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfl214trpbf-datasheets-2472.pdf | TO-261-4, TO-261AA | SOT-223 | 250V | 2W Ta 3.1W Tc | N-Channel | 140pF @ 25V | 2Ohm @ 470mA, 10V | 4V @ 250μA | 790mA Tc | 8.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFL110PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfl110trpbf-datasheets-6072.pdf | 100V | 1.5A | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 250.212891mg | Unknown | 540mOhm | 3 | No | 15A | 100V | 1 | Single | 2W | 1 | SOT-223 | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 1.5A | 20V | 100V | 4V | 2W Ta 3.1W Tc | 540mOhm | 100V | N-Channel | 180pF @ 25V | 540mOhm @ 900mA, 10V | 4V @ 250μA | 1.5A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| 94-3412PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-943412pbf-datasheets-7016.pdf | 8-SOIC (0.154, 3.90mm Width) | 30V | 3.1W Ta | N-Channel | 2335pF @ 16V | 12m Ω @ 15A, 4.5V | 1V @ 250μA | 14A Ta | 33nC @ 5V | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFL014PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfl014trpbf-datasheets-6038.pdf | 60V | 2.7A | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 250.212891mg | Unknown | 200mOhm | 3 | Tin | No | 1 | Single | 2W | 1 | SOT-223 | 300pF | 10 ns | 50ns | 19 ns | 13 ns | 2.7A | 20V | 60V | 4V | 2W Ta 3.1W Tc | 200mOhm | 60V | N-Channel | 300pF @ 25V | 200mOhm @ 1.6A, 10V | 4V @ 250μA | 2.7A Tc | 11nC @ 10V | 200 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF7466PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irf7466pbf-datasheets-7024.pdf | 30V | 11A | 8-SOIC (0.154, 3.90mm Width) | 4.05mm | Lead Free | No SVHC | 8 | 2.5W | 1 | 8-SO | 2.1nF | 2.8ns | 3.6 ns | 13 ns | 11A | 20V | 30V | 30V | 6.3 mm | 3V | 2.5W Ta | 17mOhm | 30V | N-Channel | 2100pF @ 15V | 3 V | 12.5mOhm @ 11A, 10V | 3V @ 250μA | 11A Ta | 23nC @ 4.5V | 12.5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF7805APBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7805trpbf-datasheets-9622.pdf | 30V | 13A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | No SVHC | 11MOhm | 8 | No | Single | 2.5W | 1 | 8-SO | 16 ns | 20ns | 16 ns | 38 ns | 13A | 12V | 30V | 2.5W Ta | 11mOhm | 30V | N-Channel | 3 V | 11mOhm @ 7A, 4.5V | 3V @ 250μA | 13A Ta | 31nC @ 5V | 11 mΩ | 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF8113PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf8113trpbf-datasheets-3277.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 17.2A | 135A | 0.0056Ohm | 48 mJ | N-Channel | 2910pF @ 15V | 5.6m Ω @ 17.2A, 10V | 2.2V @ 250μA | 17.2A Ta | 36nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3707ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3707ztrpbf-datasheets-9379.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | not_compliant | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 50W Tc | TO-252AA | 30A | 220A | 0.0095Ohm | 42 mJ | N-Channel | 1150pF @ 15V | 9.5m Ω @ 15A, 10V | 2.25V @ 25μA | 56A Tc | 14nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3707PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3707pbf-datasheets-7053.pdf | 30V | 61A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 13MOhm | 3 | No | Single | 87W | D-Pak | 1.99nF | 8.5 ns | 78ns | 3.3 ns | 11.8 ns | 61A | 20V | 30V | 87W Tc | 17.5mOhm | 30V | N-Channel | 1990pF @ 15V | 13mOhm @ 15A, 10V | 3V @ 250μA | 61A Tc | 19nC @ 4.5V | 13 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7458PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7458pbf-datasheets-7057.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 14A | 110A | 0.008Ohm | 280 mJ | N-Channel | 2410pF @ 15V | 8m Ω @ 14A, 16V | 4V @ 250μA | 14A Ta | 59nC @ 10V | 10V 16V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7424PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7424trpbf-datasheets-7619.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 11A | 47A | 0.0135Ohm | P-Channel | 4030pF @ 25V | 13.5m Ω @ 11A, 10V | 2.5V @ 250μA | 11A Ta | 110nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR120NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfr120ntrpbf-datasheets-8685.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 39 Weeks | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 48W Tc | TO-252AA | 9.4A | 38A | 0.21Ohm | 91 mJ | N-Channel | 330pF @ 25V | 210m Ω @ 5.6A, 10V | 4V @ 250μA | 9.4A Tc | 25nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFR1205PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr1205trpbf-datasheets-3432.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | not_compliant | 8541.29.00.95 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 107W Tc | TO-252AA | 20A | 160A | 0.027Ohm | 210 mJ | N-Channel | 1300pF @ 25V | 27m Ω @ 26A, 10V | 4V @ 250μA | 44A Tc | 65nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFL9110PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfl9110trpbf-datasheets-9205.pdf | TO-261-4, TO-261AA | 6.7mm | 1.45mm | 3.7mm | Lead Free | 250.212891mg | Unknown | 1.2Ohm | 3 | No | 1 | Single | 2W | 1 | SOT-223 | 200pF | 10 ns | 27ns | 17 ns | 15 ns | 1.1A | 20V | 100V | -4V | 2W Ta 3.1W Tc | 1.2Ohm | -100V | P-Channel | 200pF @ 25V | 1.2Ohm @ 660mA, 10V | 4V @ 250μA | 1.1A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF7452PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irf7452trpbf-datasheets-7023.pdf | 100V | 4.5A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 39 Weeks | No SVHC | 60mOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 9.5 ns | 11ns | 13 ns | 16 ns | 4.5A | 30V | 100V | SILICON | SWITCHING | 5.5V | 2.5W Ta | 120 ns | 36A | 200 mJ | 100V | N-Channel | 930pF @ 25V | 5.5 V | 60m Ω @ 2.7A, 10V | 5.5V @ 250μA | 4.5A Ta | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IRFR1205TRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr1205trpbf-datasheets-3432.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 55V | 107W Tc | N-Channel | 1300pF @ 25V | 27m Ω @ 26A, 10V | 4V @ 250μA | 44A Tc | 65nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGSF1N02LT1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mgsf1n02lt1g-datasheets-5816.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | not_compliant | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | 240 | 3 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 400mW Ta | TO-236AB | 0.75A | 0.09Ohm | N-Channel | 125pF @ 5V | 90m Ω @ 1.2A, 10V | 2.4V @ 250μA | 750mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7811AVPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7811avtrpbf-datasheets-3368.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 10.8A | 100A | 0.014Ohm | N-Channel | 1801pF @ 10V | 14m Ω @ 15A, 4.5V | 3V @ 250μA | 10.8A Ta | 26nC @ 5V | 4.5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7832PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~155°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf7832trpbf-datasheets-2578.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 20A | 160A | 0.004Ohm | 260 mJ | N-Channel | 4310pF @ 15V | 4m Ω @ 20A, 10V | 2.32V @ 250μA | 20A Ta | 51nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7413ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7413ztrpbf-datasheets-8068.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 13A | 100A | 0.01Ohm | 32 mJ | N-Channel | 1210pF @ 15V | 10m Ω @ 13A, 10V | 2.25V @ 25μA | 13A Ta | 14nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7831PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf7831trpbf-datasheets-9253.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 21A | 170A | 0.0036Ohm | 100 mJ | N-Channel | 6240pF @ 15V | 3.6m Ω @ 20A, 10V | 2.35V @ 250μA | 21A Ta | 60nC @ 4.5V | 4.5V 10V | ±12V |
