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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | ECCN Code | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Peak Reflow Temperature (Cel) | Pin Count | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TP65H300G4LSG | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | GaNFET (Gallium Nitride) | 3-PowerDFN | 650V | 21W Tc | N-Channel | 760pF @ 400V | 312m Ω @ 5A, 8V | 2.6V @ 500μA | 6.5A Tc | 9.6nC @ 8V | 8V | ±18V | |||||||||||||||||||||||||||||||||||
| BSN304,126 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/nxpusainc-bsn304126-datasheets-5832.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | EAR99 | unknown | e3 | TIN | NO | BOTTOM | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | O-PBCY-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300V | 300V | 1W Ta | 0.25A | 8Ohm | 15 pF | N-Channel | 120pF @ 25V | 6 Ω @ 250mA, 10V | 2V @ 1mA | 300mA Ta | 2.4V 10V | ±20V | ||||||||||
| R6025ANZFL1C8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6025anzfl1c8-datasheets-5806.pdf | TO-3P-3 Full Pack | 600V | 150W Tc | N-Channel | 3.25nF @ 10V | 150m Ω @ 12.5A, 10V | 4.5V @ 1mA | 25A Tc | 88nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| R6524ENZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6524enzc17-datasheets-5773.pdf | TO-3P-3 Full Pack | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 74W Tc | 24A | 72A | 0.185Ohm | 654 mJ | N-Channel | 1.65nF @ 25V | 185m Ω @ 11.3A, 10V | 4V @ 750μA | 24A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||
| R6020ENZM12C8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6020enzc17-datasheets-5774.pdf | TO-3P-3 Full Pack | 600V | 120W Tc | N-Channel | 1.4nF @ 25V | 196m Ω @ 9.5A, 10V | 4V @ 1mA | 20A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| R6030ENZM12C8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6030enzc17-datasheets-5764.pdf | TO-3P-3 Full Pack | 600V | 120W Tc | N-Channel | 2.1nF @ 25V | 130m Ω @ 14.5A, 10V | 4V @ 1mA | 30A Tc | 85nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| R6015ANZFU7C8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6015anzfu7c8-datasheets-5814.pdf | TO-3P-3 Full Pack | 600V | 110W Tc | N-Channel | 1.7nF @ 25V | 300m Ω @ 7.5A, 10V | 4.15V @ 1mA | 15A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| R6524KNZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6524knzc17-datasheets-5744.pdf | TO-3P-3 Full Pack | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 74W Tc | 24A | 72A | 0.185Ohm | 654 mJ | N-Channel | 1.85nF @ 25V | 185m Ω @ 11.3A, 10V | 5V @ 750μA | 24A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||
| R6024ENZM12C8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6024enzc17-datasheets-5721.pdf | TO-3P-3 Full Pack | 600V | 120W Tc | N-Channel | 1.65nF @ 25V | 165m Ω @ 11.3A, 10V | 4V @ 1mA | 24A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF540,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/nxpusainc-irf540127-datasheets-5794.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 100W Tc | TO-220AB | 23A | 92A | 0.077Ohm | 230 mJ | N-Channel | 1187pF @ 25V | 77m Ω @ 17A, 10V | 4V @ 1mA | 23A Tc | 65nC @ 10V | 10V | ±20V | ||||
| R6520KNZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-r6520knzc17-datasheets-5775.pdf | TO-3P-3 Full Pack | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 68W Tc | 20A | 60A | 0.205Ohm | 444 mJ | N-Channel | 1.55nF @ 25V | 205m Ω @ 9.5A, 10V | 5V @ 630μA | 20A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||
| SI3139KL3-TP | Micro Commercial Co | $0.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-si3139kl3tp-datasheets-5797.pdf | SC-101, SOT-883 | NOT SPECIFIED | NOT SPECIFIED | 20V | 100mW | P-Channel | 113pF @ 16V | 500m Ω @ 150mA, 4.5V | 1.1V @ 250μA | 660mA | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||
| IRF640,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/nxpusainc-irf640127-datasheets-5798.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 136W Tc | TO-220AB | 16A | 64A | 0.18Ohm | 580 mJ | N-Channel | 1850pF @ 25V | 180m Ω @ 8A, 10V | 4V @ 1mA | 16A Tc | 63nC @ 10V | 10V | ±20V | ||||
| IRF530N,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/nxpusainc-irf530n127-datasheets-5799.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 79W Tc | TO-220AB | 17A | 68A | 0.11Ohm | 150 mJ | N-Channel | 633pF @ 25V | 110m Ω @ 9A, 10V | 4V @ 1mA | 17A Tc | 40nC @ 10V | 10V | ±20V | ||||
| R6530ENZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6530enzc17-datasheets-5763.pdf | TO-3P-3 Full Pack | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 86W Tc | 30A | 90A | 0.14Ohm | 730 mJ | N-Channel | 2.1nF @ 25V | 140m Ω @ 14.5A, 10V | 4V @ 960μA | 30A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||
| R6520KNZC17 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6520knzc17-datasheets-5775.pdf | TO-3P-3 Full Pack | 650V | 68W Tc | N-Channel | 1.55nF @ 25V | 205m Ω @ 9.5A, 10V | 5V @ 630μA | 20A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| TP65H150G4LSG | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | |||||||||||||||||||||||||||||||||||||||||||||||||
| R6021ANZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
| TPH3206LDG-TR | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | GaNFET (Gallium Nitride) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/transphorm-tph3206ldgtr-datasheets-5777.pdf | 3-PowerDFN | NOT SPECIFIED | NOT SPECIFIED | 600V | 96W Tc | N-Channel | 760pF @ 480V | 180m Ω @ 11A, 8V | 2.6V @ 500μA | 17A Tc | 9.3nC @ 4.5V | 8V | ±18V | |||||||||||||||||||||||||||||||
| R6020ANZ8U7C8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6020anz8u7c8-datasheets-5780.pdf | TO-3P-3 Full Pack | 600V | 120W Tc | N-Channel | 2.04nF @ 25V | 220m Ω @ 10A, 10V | 4.15V @ 1mA | 20A Ta | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| R6515ENZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6515enzc17-datasheets-5768.pdf | TO-3P-3 Full Pack | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 60W Tc | 15A | 45A | 0.315Ohm | 284 mJ | N-Channel | 910pF @ 25V | 315m Ω @ 6.5A, 10V | 4V @ 430μA | 15A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||
| R6535KNZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6535knzc17-datasheets-5745.pdf | TO-3P-3 Full Pack | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 102W Tc | 35A | 105A | 0.115Ohm | 867 mJ | N-Channel | 3nF @ 25V | 115m Ω @ 18.1A, 10V | 5V @ 1.21mA | 35A Tc | 72nC @ 10V | 10V | ±20V | |||||||||||||||
| R6530KNZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6530knzc17-datasheets-5759.pdf | TO-3P-3 Full Pack | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 86W Tc | 30A | 90A | 0.14Ohm | 730 mJ | N-Channel | 2.35nF @ 25V | 140m Ω @ 14.5A, 10V | 5V @ 960μA | 30A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||
| R6035ENZM12C8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6035enzc17-datasheets-5760.pdf | TO-3P-3 Full Pack | 600V | 120W Tc | N-Channel | 2.72nF @ 25V | 102m Ω @ 18.1A, 10V | 4V @ 1mA | 35A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| RJK1001DPP-A0#T2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk1001dppa0t2-datasheets-5766.pdf | TO-220-3 Full Pack | 100V | 30W Ta | N-Channel | 10000pF @ 10V | 5.5m Ω @ 40A, 10V | 4V @ 1mA | 80A Ta | 147nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| R6520ENZC17 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6520enzc17-datasheets-5767.pdf | TO-3P-3 Full Pack | 650V | 68W Tc | N-Channel | 1.4nF @ 25V | 205m Ω @ 9.5A, 10V | 4V @ 630μA | 20A Tc | 61nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| AOSN32338C | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-70, SOT-323 | 30V | 1.1W Ta | N-Channel | 340pF @ 15V | 51m Ω @ 3.7A, 10V | 1.5V @ 250μA | 3.7A Ta | 16nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||
| R6515ENZC17 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6515enzc17-datasheets-5768.pdf | TO-3P-3 Full Pack | 650V | 60W Tc | N-Channel | 910pF @ 25V | 315m Ω @ 6.5A, 10V | 4V @ 430μA | 15A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| SPS03N60C3AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | TO-251-3 Stub Leads, IPak | 650V | 38W Tc | N-Channel | 400pF @ 25V | 1.4 Ω @ 2A, 10V | 3.9V @ 135μA | 3.2A Tc | 17nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| RJK1002DPN-A0#T2 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk1002dpna0t2-datasheets-5769.pdf | TO-220-3 | 100V | 150W Ta | N-Channel | 6450pF @ 10V | 7.6m Ω @ 35A, 10V | 4V @ 1mA | 70A Ta | 94nC @ 10V | 10V | ±20V |
