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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| PHP66NQ03LT,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/nxpusainc-php66nq03lt127-datasheets-5923.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 93W Tc | TO-220AB | 66A | 228A | 0.0136Ohm | 90 mJ | N-Channel | 860pF @ 25V | 10.5m Ω @ 25A, 10V | 2V @ 1mA | 66A Tc | 12nC @ 5V | 5V 10V | ±20V | |||||||||||
| PHP73N06T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb73n06t118-datasheets-5911.pdf | TO-220-3 | 3 | EAR99 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 166W Tc | TO-220AB | 73A | 266A | 0.014Ohm | 125 mJ | N-Channel | 2464pF @ 25V | 14m Ω @ 25A, 10V | 4V @ 1mA | 73A Tc | 54nC @ 10V | 10V | ±20V | ||||||||||||
| PHP45NQ15T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nexperiausainc-phb45nq15t118-datasheets-9695.pdf | TO-220-3 | 3 | EAR99 | unknown | NO | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 230W Tc | TO-220AB | 45.1A | 90.2A | 0.042Ohm | 180 mJ | N-Channel | 1770pF @ 25V | 42m Ω @ 20A, 10V | 4V @ 1mA | 45.1A Tc | 32nC @ 10V | 10V | ±20V | |||||||||||||||
| PHP78NQ03LT,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-php78nq03lt127-datasheets-5926.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 93W Tc | TO-220AB | 75A | 228A | 0.0135Ohm | 185 mJ | N-Channel | 1074pF @ 25V | 9m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 13nC @ 5V | 5V 10V | ±20V | ||||||||||
| PHB73N06T,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb73n06t118-datasheets-5911.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 60V | 166W Tc | N-Channel | 2464pF @ 25V | 14m Ω @ 25A, 10V | 4V @ 1mA | 73A Tc | 54nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| PHP21N06LT,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/nexperiausainc-phb21n06lt118-datasheets-8632.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, FAST SWITCHING | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 2013-06-14 00:00:00 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 56W Tc | TO-220AB | 19A | 76A | 0.075Ohm | 34 mJ | N-Channel | 650pF @ 25V | 70m Ω @ 10A, 10V | 2V @ 1mA | 19A Tc | 9.4nC @ 5V | 5V 10V | ±15V | ||||||||||
| BUK9518-55,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk951855127-datasheets-5913.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, ESD PROTECTION | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 125W Tc | TO-220AB | 57A | 228A | 0.018Ohm | 290 pF | 125 mJ | N-Channel | 2600pF @ 25V | 215ns | 175ns | 18m Ω @ 25A, 5V | 2V @ 1mA | 57A Tc | 5V | ±10V | ||||||||
| PHP152NQ03LTA,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb152nq03lta118-datasheets-7616.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 150W Tc | TO-220AB | 75A | 240A | 0.005Ohm | 560 mJ | N-Channel | 3140pF @ 25V | 4m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 36nC @ 5V | 5V 10V | ±20V | |||||||||||
| PHP14NQ20T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phd14nq20t118-datasheets-5865.pdf | TO-220-3 | 3 | EAR99 | e3 | TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 125W Tc | TO-220AB | 14A | 56A | 0.23Ohm | 70 mJ | N-Channel | 1500pF @ 25V | 230m Ω @ 7A, 10V | 4V @ 1mA | 14A Tc | 38nC @ 10V | 10V | ±20V | ||||||||||||
| PHP101NQ04T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb101nq04t118-datasheets-7021.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 157W Tc | TO-220AB | 75A | 240A | 0.008Ohm | 200 mJ | N-Channel | 2020pF @ 25V | 8m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 36.6nC @ 10V | 10V | ±20V | |||||||||||
| PHD78NQ03LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 107W Tc | 75A | 240A | 0.0135Ohm | 100 mJ | N-Channel | 970pF @ 12V | 9m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 11nC @ 4.5V | 5V 10V | ±20V | ||||||||||||
| PHP119NQ06T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-php119nq06t127-datasheets-5900.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 200W Tc | TO-220AB | 75A | 240A | 0.0071Ohm | 280 mJ | N-Channel | 2820pF @ 25V | 7.1m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 53nC @ 10V | 10V | ±20V | |||||||||||
| PHB11N06LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb11n06lt118-datasheets-5901.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | YES | SINGLE | GULL WING | 3 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 33W Tc | 10.3A | 41A | 0.15Ohm | 25 mJ | N-Channel | 330pF @ 25V | 130m Ω @ 5.5A, 10V | 2V @ 1mA | 10.3A Tc | 5.2nC @ 5V | 5V 10V | ±15V | |||||||||||||||
| PHB225NQ04T,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb225nq04t118-datasheets-5902.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 40V | 300W Tc | N-Channel | 5100pF @ 25V | 3.1mOhm @ 25A, 10V | 4V @ 1mA | 75A Tc | 94nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| PHP174NQ04LT,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb174nq04lt118-datasheets-7625.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 250W Tc | TO-220AB | 75A | 240A | 0.0048Ohm | 560 mJ | N-Channel | 5345pF @ 25V | 4m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 64nC @ 5V | 4.5V 10V | ±15V | |||||||||||
| PHP101NQ03LT,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-php101nq03lt127-datasheets-5904.pdf | TO-220-3 | 3 | EAR99 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 166W Tc | TO-220AB | 75A | 240A | 0.0075Ohm | 185 mJ | N-Channel | 2180pF @ 25V | 5.5m Ω @ 25A, 10V | 2.5V @ 1mA | 75A Tc | 23nC @ 5V | 5V 10V | ±20V | ||||||||||||
| PHD63NQ03LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/nxpusainc-php63nq03lt127-datasheets-6341.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 111W Tc | 68.9A | 240A | 0.0177Ohm | N-Channel | 920pF @ 25V | 13m Ω @ 25A, 10V | 2.5V @ 1mA | 68.9A Tc | 9.6nC @ 5V | 5V 10V | ±20V | ||||||||||||
| BUK9635-100A,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk9635100a118-datasheets-5906.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 149W Tc | 41A | 165A | 0.039Ohm | 125 mJ | N-Channel | 3573pF @ 25V | 34m Ω @ 25A, 10V | 2V @ 1mA | 41A Tc | 4.5V 10V | ±10V | |||||||||||
| PHP193NQ06T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb193nq06t118-datasheets-5887.pdf | TO-220-3 | 3 | EAR99 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 300W Tc | TO-220AB | 75A | 240A | 0.004Ohm | 560 mJ | N-Channel | 5082pF @ 25V | 4m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 85.6nC @ 10V | 10V | ±20V | ||||||||||||
| PHP143NQ04T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-php143nq04t127-datasheets-5910.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 200W Tc | TO-220AB | 75A | 240A | 0.0052Ohm | 475 mJ | N-Channel | 2840pF @ 25V | 5.2m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 52nC @ 10V | 10V | ±20V | |||||||||||
| PHP129NQ04LT,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb129nq04lt118-datasheets-7627.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 200W Tc | TO-220AB | 75A | 240A | 0.0071Ohm | 475 mJ | N-Channel | 3965pF @ 25V | 5m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 44.2nC @ 5V | 4.5V 10V | ±15V | |||||||||||
| PHD22NQ20T,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phd22nq20t118-datasheets-5879.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 150W Tc | 21.1A | 42.2A | 0.12Ohm | 150 mJ | N-Channel | 1380pF @ 25V | 120m Ω @ 12A, 10V | 4V @ 1mA | 21.1A Tc | 30.8nC @ 10V | 10V | ±20V | |||||||||||||
| PHM30NQ10T,518 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phm30nq10t518-datasheets-5880.pdf | 8-VDFN Exposed Pad | 8 | EAR99 | unknown | YES | DUAL | NO LEAD | 8 | 1 | Not Qualified | R-PDSO-N8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 62.5W Tc | 37.6A | 60A | 0.02Ohm | N-Channel | 3600pF @ 25V | 20m Ω @ 18A, 10V | 4V @ 1mA | 37.6A Tc | 53.7nC @ 10V | 10V | ±20V | ||||||||||||||||||
| IRFZ44N,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/nxpusainc-irfz44n127-datasheets-5881.pdf | TO-220-3 | 3 | EAR99 | ESD PROTECTED | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 110W Tc | TO-220AB | 49A | 160A | 0.022Ohm | 110 mJ | N-Channel | 1800pF @ 25V | 22m Ω @ 25A, 10V | 4V @ 1mA | 49A Tc | 62nC @ 10V | 10V | ±20V | |||||||||||
| PHD96NQ03LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-phd96nq03lt118-datasheets-5883.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 115W Tc | TO-252AA | 75A | 240A | 0.0075Ohm | 185 mJ | N-Channel | 2200pF @ 25V | 4.95m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 26.7nC @ 5V | 5V 10V | ±20V | ||||||||||||
| PHD98N03LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nxpusainc-phd98n03lt118-datasheets-5884.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 111W Tc | TO-252AA | 75A | 240A | 0.0073Ohm | 183 mJ | N-Channel | 3000pF @ 20V | 5.9m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 40nC @ 5V | 5V 10V | ±20V | ||||||||||||
| R6050JNZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6050jnzc17-datasheets-5732.pdf | TO-3P-3 Full Pack | NOT SPECIFIED | NOT SPECIFIED | 600V | 120W Tc | N-Channel | 4.5nF @ 100V | 83m Ω @ 25A, 15V | 7V @ 5mA | 50A Tc | 120nC @ 15V | 15V | ±30V | |||||||||||||||||||||||||||||||||||||
| PHB193NQ06T,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb193nq06t118-datasheets-5887.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 55V | 300W Tc | N-Channel | 5082pF @ 25V | 4mOhm @ 25A, 10V | 4V @ 1mA | 75A Tc | 85.6nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| PHM25NQ10T,518 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phm25nq10t518-datasheets-5888.pdf | 8-VDFN Exposed Pad | 8 | EAR99 | unknown | YES | DUAL | NO LEAD | 8 | 1 | Not Qualified | R-PDSO-N8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 62.5W Tc | 30.7A | 60A | 0.03Ohm | 170 mJ | N-Channel | 1800pF @ 20V | 30m Ω @ 10A, 10V | 4V @ 1mA | 30.7A Tc | 26.6nC @ 10V | 10V | ±20V | ||||||||||||||||
| PHD45N03LTA,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nxpusainc-php45n03lta127-datasheets-6376.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 65W Tc | 40A | 160A | 0.024Ohm | 40 mJ | N-Channel | 700pF @ 25V | 21m Ω @ 25A, 10V | 2V @ 1mA | 40A Tc | 19nC @ 5V | 3.5V 10V | ±20V |
