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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| R6520ENZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6520enzc17-datasheets-5767.pdf | TO-3P-3 Full Pack | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 68W Tc | 20A | 60A | 0.205Ohm | 444 mJ | N-Channel | 1.4nF @ 25V | 205m Ω @ 9.5A, 10V | 4V @ 630μA | 20A Tc | 61nC @ 10V | 10V | ±20V | |||||||||||||||||||
| PHU101NQ03LT,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-phu101nq03lt127-datasheets-5919.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 166W Tc | 75A | 240A | 0.0075Ohm | 185 mJ | N-Channel | 2180pF @ 25V | 5.5m Ω @ 25A, 10V | 2.5V @ 1mA | 75A Tc | 23nC @ 5V | 5V 10V | ±20V | |||||||||
| PHP75NQ08T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-php75nq08t127-datasheets-5920.pdf | TO-220-3 | 3 | EAR99 | e3 | TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 157W Tc | TO-220AB | 75A | 240A | 0.013Ohm | 120 mJ | N-Channel | 1985pF @ 25V | 13m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 40nC @ 10V | 10V | ±20V | |||||||||
| PHP225NQ04T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb225nq04t118-datasheets-5902.pdf | TO-220-3 | 3 | EAR99 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 300W Tc | TO-220AB | 75A | 240A | 0.0031Ohm | 560 mJ | N-Channel | 5100pF @ 25V | 3.1m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 94nC @ 10V | 10V | ±20V | |||||||||
| PHU11NQ10T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phu11nq10t127-datasheets-5922.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 57.7W Tc | 10.9A | 43.6A | 0.18Ohm | 35 mJ | N-Channel | 360pF @ 25V | 180m Ω @ 9A, 10V | 4V @ 1mA | 10.9A Tc | 14.7nC @ 10V | 10V | ±20V | |||||||||
| PHP66NQ03LT,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/nxpusainc-php66nq03lt127-datasheets-5923.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 93W Tc | TO-220AB | 66A | 228A | 0.0136Ohm | 90 mJ | N-Channel | 860pF @ 25V | 10.5m Ω @ 25A, 10V | 2V @ 1mA | 66A Tc | 12nC @ 5V | 5V 10V | ±20V | ||||||||
| PHP73N06T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb73n06t118-datasheets-5911.pdf | TO-220-3 | 3 | EAR99 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 166W Tc | TO-220AB | 73A | 266A | 0.014Ohm | 125 mJ | N-Channel | 2464pF @ 25V | 14m Ω @ 25A, 10V | 4V @ 1mA | 73A Tc | 54nC @ 10V | 10V | ±20V | |||||||||
| PHP45NQ15T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nexperiausainc-phb45nq15t118-datasheets-9695.pdf | TO-220-3 | 3 | EAR99 | unknown | NO | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 230W Tc | TO-220AB | 45.1A | 90.2A | 0.042Ohm | 180 mJ | N-Channel | 1770pF @ 25V | 42m Ω @ 20A, 10V | 4V @ 1mA | 45.1A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||
| BUK9635-100A,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk9635100a118-datasheets-5906.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 149W Tc | 41A | 165A | 0.039Ohm | 125 mJ | N-Channel | 3573pF @ 25V | 34m Ω @ 25A, 10V | 2V @ 1mA | 41A Tc | 4.5V 10V | ±10V | ||||||||
| PHP193NQ06T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb193nq06t118-datasheets-5887.pdf | TO-220-3 | 3 | EAR99 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 300W Tc | TO-220AB | 75A | 240A | 0.004Ohm | 560 mJ | N-Channel | 5082pF @ 25V | 4m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 85.6nC @ 10V | 10V | ±20V | |||||||||
| PHP143NQ04T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-php143nq04t127-datasheets-5910.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 200W Tc | TO-220AB | 75A | 240A | 0.0052Ohm | 475 mJ | N-Channel | 2840pF @ 25V | 5.2m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 52nC @ 10V | 10V | ±20V | ||||||||
| PHP129NQ04LT,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb129nq04lt118-datasheets-7627.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 200W Tc | TO-220AB | 75A | 240A | 0.0071Ohm | 475 mJ | N-Channel | 3965pF @ 25V | 5m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 44.2nC @ 5V | 4.5V 10V | ±15V | ||||||||
| PHP14NQ20T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phd14nq20t118-datasheets-5865.pdf | TO-220-3 | 3 | EAR99 | e3 | TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 125W Tc | TO-220AB | 14A | 56A | 0.23Ohm | 70 mJ | N-Channel | 1500pF @ 25V | 230m Ω @ 7A, 10V | 4V @ 1mA | 14A Tc | 38nC @ 10V | 10V | ±20V | |||||||||
| PHP101NQ04T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb101nq04t118-datasheets-7021.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 157W Tc | TO-220AB | 75A | 240A | 0.008Ohm | 200 mJ | N-Channel | 2020pF @ 25V | 8m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 36.6nC @ 10V | 10V | ±20V | ||||||||
| PHD78NQ03LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 107W Tc | 75A | 240A | 0.0135Ohm | 100 mJ | N-Channel | 970pF @ 12V | 9m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 11nC @ 4.5V | 5V 10V | ±20V | |||||||||
| PHP119NQ06T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-php119nq06t127-datasheets-5900.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 200W Tc | TO-220AB | 75A | 240A | 0.0071Ohm | 280 mJ | N-Channel | 2820pF @ 25V | 7.1m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 53nC @ 10V | 10V | ±20V | ||||||||
| PHB11N06LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb11n06lt118-datasheets-5901.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | YES | SINGLE | GULL WING | 3 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 33W Tc | 10.3A | 41A | 0.15Ohm | 25 mJ | N-Channel | 330pF @ 25V | 130m Ω @ 5.5A, 10V | 2V @ 1mA | 10.3A Tc | 5.2nC @ 5V | 5V 10V | ±15V | ||||||||||||
| PHB225NQ04T,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb225nq04t118-datasheets-5902.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 40V | 300W Tc | N-Channel | 5100pF @ 25V | 3.1mOhm @ 25A, 10V | 4V @ 1mA | 75A Tc | 94nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| PHP174NQ04LT,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb174nq04lt118-datasheets-7625.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 250W Tc | TO-220AB | 75A | 240A | 0.0048Ohm | 560 mJ | N-Channel | 5345pF @ 25V | 4m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 64nC @ 5V | 4.5V 10V | ±15V | ||||||||
| PHP101NQ03LT,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-php101nq03lt127-datasheets-5904.pdf | TO-220-3 | 3 | EAR99 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 166W Tc | TO-220AB | 75A | 240A | 0.0075Ohm | 185 mJ | N-Channel | 2180pF @ 25V | 5.5m Ω @ 25A, 10V | 2.5V @ 1mA | 75A Tc | 23nC @ 5V | 5V 10V | ±20V | |||||||||
| PHD63NQ03LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/nxpusainc-php63nq03lt127-datasheets-6341.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 111W Tc | 68.9A | 240A | 0.0177Ohm | N-Channel | 920pF @ 25V | 13m Ω @ 25A, 10V | 2.5V @ 1mA | 68.9A Tc | 9.6nC @ 5V | 5V 10V | ±20V | |||||||||
| PHD21N06LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/nexperiausainc-phb21n06lt118-datasheets-8632.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 2013-06-14 00:00:00 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 56W Tc | 19A | 76A | 0.075Ohm | 34 mJ | N-Channel | 650pF @ 25V | 70m Ω @ 10A, 10V | 2V @ 1mA | 19A Tc | 9.4nC @ 5V | 5V 10V | ±15V | |||||||
| PHD23NQ10T,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/nxpusainc-phd23nq10t118-datasheets-5891.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 100W Tc | 23A | 92A | 0.07Ohm | 93 mJ | N-Channel | 1187pF @ 25V | 70m Ω @ 13A, 10V | 4V @ 1mA | 23A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||
| PHP176NQ04T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-php176nq04t127-datasheets-5892.pdf | TO-220-3 | 3 | EAR99 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 250W Tc | TO-220AB | 75A | 240A | 0.0043Ohm | 560 mJ | N-Channel | 3620pF @ 25V | 4.3m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 68.9nC @ 10V | 10V | ±20V | |||||||||
| PHM21NQ15T,518 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phm21nq15t518-datasheets-5893.pdf | 8-VDFN Exposed Pad | 8 | EAR99 | unknown | YES | DUAL | NO LEAD | 8 | 1 | Not Qualified | R-PDSO-N8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 62.5W Tc | 22.2A | 60A | 0.055Ohm | 250 mJ | N-Channel | 2080pF @ 25V | 55m Ω @ 15A, 10V | 4V @ 1mA | 22.2A Tc | 36.2nC @ 10V | 5V 10V | ±20V | |||||||||||||
| PHB143NQ04T,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb143nq04t118-datasheets-5894.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 200W Tc | 75A | 240A | 0.0052Ohm | 475 mJ | N-Channel | 2840pF @ 25V | 5.2m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 52nC @ 10V | 10V | ±20V | |||||||||
| PHK12NQ10T,518 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-phk12nq10t518-datasheets-5895.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | 8541.29.00.75 | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 8.9W Tc | MS-012AA | 11.6A | 48A | 0.028Ohm | 65 mJ | N-Channel | 1965pF @ 25V | 28m Ω @ 6A, 10V | 4V @ 1mA | 11.6A Tc | 35nC @ 10V | 10V | ±20V | ||||||||
| PHD22NQ20T,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phd22nq20t118-datasheets-5879.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 150W Tc | 21.1A | 42.2A | 0.12Ohm | 150 mJ | N-Channel | 1380pF @ 25V | 120m Ω @ 12A, 10V | 4V @ 1mA | 21.1A Tc | 30.8nC @ 10V | 10V | ±20V | ||||||||||
| PHM30NQ10T,518 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phm30nq10t518-datasheets-5880.pdf | 8-VDFN Exposed Pad | 8 | EAR99 | unknown | YES | DUAL | NO LEAD | 8 | 1 | Not Qualified | R-PDSO-N8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 62.5W Tc | 37.6A | 60A | 0.02Ohm | N-Channel | 3600pF @ 25V | 20m Ω @ 18A, 10V | 4V @ 1mA | 37.6A Tc | 53.7nC @ 10V | 10V | ±20V | |||||||||||||||
| IRFZ44N,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/nxpusainc-irfz44n127-datasheets-5881.pdf | TO-220-3 | 3 | EAR99 | ESD PROTECTED | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 110W Tc | TO-220AB | 49A | 160A | 0.022Ohm | 110 mJ | N-Channel | 1800pF @ 25V | 22m Ω @ 25A, 10V | 4V @ 1mA | 49A Tc | 62nC @ 10V | 10V | ±20V |
