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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Continuous Drain Current (ID) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| PSMN004-55W,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/nxpusainc-psmn00455w127-datasheets-6017.pdf | TO-247-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 300W Tc | 100A | 300A | 0.005Ohm | 357 mJ | N-Channel | 13000pF @ 25V | 4.2m Ω @ 25A, 10V | 2V @ 1mA | 100A Tc | 226nC @ 5V | 4.5V 10V | ±15V | ||||||||||||
| PHX18NQ11T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/nxpusainc-phx18nq11t127-datasheets-6018.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 110V | 110V | 31.2W Tc | TO-220AB | 12.5A | 50.2A | 0.09Ohm | 56 mJ | N-Channel | 635pF @ 25V | 90m Ω @ 9A, 10V | 4V @ 1mA | 12.5A Tc | 21nC @ 10V | 10V | ±20V | ||||||||||||
| PSMN005-55P,127 | NXP USA Inc. | $9.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/nxpusainc-psmn00555b118-datasheets-7019.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 230W Tc | TO-220AB | 75A | 240A | 0.0067Ohm | 268 mJ | N-Channel | 6500pF @ 25V | 5.8m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 103nC @ 5V | 4.5V 10V | ±15V | ||||||||||
| PHP34NQ11T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-php34nq11t127-datasheets-6004.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 110V | 110V | 136W Tc | TO-220AB | 35A | 140A | 0.04Ohm | 115 mJ | N-Channel | 1700pF @ 25V | 40m Ω @ 17A, 10V | 4V @ 1mA | 35A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||
| PHW80NQ10T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/nxpusainc-phw80nq10t127-datasheets-5961.pdf | TO-247-3 | 3 | EAR99 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 263W Tc | 80A | 320A | 0.015Ohm | 481 mJ | N-Channel | 4720pF @ 25V | 15m Ω @ 25A, 10V | 4V @ 1mA | 80A Tc | 109nC @ 10V | 10V | ±20V | |||||||||||||
| PHX8NQ11T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phx8nq11t127-datasheets-5973.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | EAR99 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 110V | 110V | 27.7W Tc | TO-220AB | 7.5A | 30.2A | 0.18Ohm | 35 mJ | N-Channel | 360pF @ 25V | 180m Ω @ 6A, 10V | 4V @ 1mA | 7.5A Tc | 14.7nC @ 10V | 10V | ±20V | |||||||||||||
| PHU66NQ03LT,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/nxpusainc-php66nq03lt127-datasheets-5923.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 25V | 25V | 93W Tc | 66A | 228A | 0.0136Ohm | 90 mJ | N-Channel | 860pF @ 25V | 10.5m Ω @ 25A, 10V | 2V @ 1mA | 66A Tc | 12nC @ 5V | 5V 10V | ±20V | ||||||||||||||
| PHX45NQ11T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phx45nq11t127-datasheets-5980.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | EAR99 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 110V | 110V | 62.5W Tc | TO-220AB | 30.4A | 121A | 0.025Ohm | 250 mJ | N-Channel | 2600pF @ 25V | 25m Ω @ 25A, 10V | 4V @ 1mA | 30.4A Tc | 61nC @ 10V | 10V | ±20V | |||||||||||||
| CP773-CMPDM302PH-CT | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cp773cmpdm302phwn-datasheets-5563.pdf | Die | 30V | P-Channel | 800pF @ 10V | 91m Ω @ 1.2A, 4.5V | 1.4V @ 250μA | 2.4A Ta | 9.6nC @ 5V | 2.5V 4.5V | 12V | |||||||||||||||||||||||||||||||||||||||
| PHM18NQ15T,518 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phm18nq15t518-datasheets-5989.pdf | 8-VDFN Exposed Pad | 8 | EAR99 | YES | DUAL | NO LEAD | 8 | 1 | Not Qualified | R-PDSO-N8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 62.5W Tc | 19A | 76A | 0.075Ohm | 170 mJ | N-Channel | 1150pF @ 25V | 75m Ω @ 12A, 10V | 4V @ 1mA | 19A Tc | 26.4nC @ 10V | 5V 10V | ±20V | |||||||||||||||||
| PMN28UN,165 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmn28un135-datasheets-3964.pdf | SC-74, SOT-457 | 6 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | 1.75W Tc | 5.7A | 0.04Ohm | N-Channel | 740pF @ 10V | 34m Ω @ 2A, 4.5V | 700mV @ 1mA | 5.7A Tc | 10.1nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||
| PHX34NQ11T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/nxpusainc-phx34nq11t127-datasheets-5991.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 110V | 110V | 56.8W Tc | TO-220AB | 24.8A | 99.4A | 0.04Ohm | 115 mJ | N-Channel | 1700pF @ 25V | 40m Ω @ 17A, 10V | 4V @ 1mA | 24.8A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||
| PHP110NQ06LT,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb110nq06lt118-datasheets-7015.pdf | TO-220-3 | 3 | EAR99 | unknown | 8541.29.00.95 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 200W Tc | TO-220AB | 75A | 240A | 0.0093Ohm | 280 mJ | N-Channel | 3960pF @ 25V | 7m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 45nC @ 5V | 4.5V 10V | ±15V | ||||||||||
| PMN45EN,165 | NXP USA Inc. | $5.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmn45en135-datasheets-3981.pdf | SC-74, SOT-457 | 6 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.75W Tc | 5.2A | 0.04Ohm | N-Channel | 495pF @ 25V | 40m Ω @ 3A, 10V | 2V @ 1mA | 5.2A Tc | 6.1nC @ 4.5V | 4.5V 10V | 20V | |||||||||||||
| PHX23NQ11T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phx23nq11t127-datasheets-5934.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 110V | 110V | 41.6W Tc | TO-220AB | 16A | 64.3A | 0.07Ohm | 93 mJ | N-Channel | 830pF @ 25V | 70m Ω @ 13A, 10V | 4V @ 1mA | 16A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||
| RQJ0305EQDQS#H1 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rqj0305eqdqsh1-datasheets-5935.pdf | TO-243AA | 3 | yes | EAR99 | YES | NOT SPECIFIED | 4 | NOT SPECIFIED | Other Transistors | -3.4A | Single | 30V | 1.5W Ta | P-Channel | 330pF @ 10V | 140m Ω @ 1.7A, 4.5V | 1.4V @ 1mA | 3.4A Ta | 3nC @ 4.5V | 2.5V 4.5V | +8V, -12V | |||||||||||||||||||||||||||
| PMG370XN,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | 6-TSSOP, SC-88, SOT-363 | 6 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 690mW Tc | 0.96A | 0.44Ohm | N-Channel | 37pF @ 25V | 440m Ω @ 200mA, 4.5V | 1.5V @ 250μA | 960mA Ta | 0.65nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||
| PHX27NQ11T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phx27nq11t127-datasheets-5939.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 110V | 110V | 50W Tc | TO-220AB | 20.8A | 83.4A | 0.05Ohm | 90 mJ | N-Channel | 1240pF @ 25V | 50m Ω @ 14A, 10V | 4V @ 1mA | 20.8A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||
| PHP83N03LT,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-php83n03lt127-datasheets-5927.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 115W Tc | TO-220AB | 75A | 240A | 0.012Ohm | 120 mJ | N-Channel | 1660pF @ 25V | 9m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 33nC @ 5V | 5V 10V | ±15V | |||||||||||
| PHU108NQ03LT,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb108nq03lt118-datasheets-6292.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | NO | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 187W Tc | 75A | 240A | 0.0075Ohm | 180 mJ | N-Channel | 1375pF @ 12V | 6m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 16.3nC @ 4.5V | 5V 10V | ±20V | ||||||||||||||||
| PHP32N06LT,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-php32n06lt127-datasheets-5929.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 97W Tc | TO-220AB | 34A | 136A | 0.043Ohm | 100 mJ | N-Channel | 1280pF @ 25V | 37m Ω @ 20A, 10V | 2V @ 1mA | 34A Tc | 17nC @ 5V | 4.5V 10V | ±15V | ||||||||||
| PHT2NQ10T,135 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/nxpusainc-pht2nq10t135-datasheets-5930.pdf | TO-261-4, TO-261AA | 4 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 6.25W Tc | 0.43Ohm | N-Channel | 160pF @ 25V | 430m Ω @ 1.75A, 10V | 4V @ 1mA | 2.5A Tc | 5.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||
| PSMN004-36B,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/nxpusainc-psmn00436b118-datasheets-5931.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 36V | 36V | 230W Tc | 75A | 240A | 0.0054Ohm | 120 mJ | N-Channel | 6000pF @ 20V | 4m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 97nC @ 5V | 4.5V 10V | ±15V | |||||||||||
| PHP52N06T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 3 | EAR99 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 120W Tc | TO-220AB | 52A | 208A | 0.022Ohm | 115 mJ | N-Channel | 1592pF @ 25V | 22m Ω @ 25A, 10V | 4V @ 1mA | 52A Tc | 36nC @ 10V | 10V | ±20V | |||||||||||||
| PHP3055E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/nxpusainc-phd3055e118-datasheets-6251.pdf | TO-220-3 | 3 | EAR99 | FAST SWITCHING | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 33W Tc | TO-220AB | 10.3A | 41A | 0.15Ohm | 25 mJ | N-Channel | 250pF @ 25V | 130ns | 80ns | 150m Ω @ 5.5A, 10V | 4V @ 1mA | 10.3A Tc | 5.8nC @ 10V | 10V | ±20V | ||||||||
| R6520ENZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6520enzc17-datasheets-5767.pdf | TO-3P-3 Full Pack | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 68W Tc | 20A | 60A | 0.205Ohm | 444 mJ | N-Channel | 1.4nF @ 25V | 205m Ω @ 9.5A, 10V | 4V @ 630μA | 20A Tc | 61nC @ 10V | 10V | ±20V | ||||||||||||||||||||||
| PHU101NQ03LT,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-phu101nq03lt127-datasheets-5919.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 166W Tc | 75A | 240A | 0.0075Ohm | 185 mJ | N-Channel | 2180pF @ 25V | 5.5m Ω @ 25A, 10V | 2.5V @ 1mA | 75A Tc | 23nC @ 5V | 5V 10V | ±20V | ||||||||||||
| PHP75NQ08T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-php75nq08t127-datasheets-5920.pdf | TO-220-3 | 3 | EAR99 | e3 | TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 157W Tc | TO-220AB | 75A | 240A | 0.013Ohm | 120 mJ | N-Channel | 1985pF @ 25V | 13m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||
| PHP225NQ04T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb225nq04t118-datasheets-5902.pdf | TO-220-3 | 3 | EAR99 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 300W Tc | TO-220AB | 75A | 240A | 0.0031Ohm | 560 mJ | N-Channel | 5100pF @ 25V | 3.1m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 94nC @ 10V | 10V | ±20V | ||||||||||||
| PHU11NQ10T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phu11nq10t127-datasheets-5922.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 57.7W Tc | 10.9A | 43.6A | 0.18Ohm | 35 mJ | N-Channel | 360pF @ 25V | 180m Ω @ 9A, 10V | 4V @ 1mA | 10.9A Tc | 14.7nC @ 10V | 10V | ±20V |
