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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PHD22NQ20T,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phd22nq20t118-datasheets-5879.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 150W Tc | 21.1A | 42.2A | 0.12Ohm | 150 mJ | N-Channel | 1380pF @ 25V | 120m Ω @ 12A, 10V | 4V @ 1mA | 21.1A Tc | 30.8nC @ 10V | 10V | ±20V | |||||||||
| PHM30NQ10T,518 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phm30nq10t518-datasheets-5880.pdf | 8-VDFN Exposed Pad | 8 | EAR99 | unknown | YES | DUAL | NO LEAD | 8 | 1 | Not Qualified | R-PDSO-N8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 62.5W Tc | 37.6A | 60A | 0.02Ohm | N-Channel | 3600pF @ 25V | 20m Ω @ 18A, 10V | 4V @ 1mA | 37.6A Tc | 53.7nC @ 10V | 10V | ±20V | ||||||||||||||
| IRFZ44N,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/nxpusainc-irfz44n127-datasheets-5881.pdf | TO-220-3 | 3 | EAR99 | ESD PROTECTED | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 110W Tc | TO-220AB | 49A | 160A | 0.022Ohm | 110 mJ | N-Channel | 1800pF @ 25V | 22m Ω @ 25A, 10V | 4V @ 1mA | 49A Tc | 62nC @ 10V | 10V | ±20V | |||||||
| PHD96NQ03LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-phd96nq03lt118-datasheets-5883.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 115W Tc | TO-252AA | 75A | 240A | 0.0075Ohm | 185 mJ | N-Channel | 2200pF @ 25V | 4.95m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 26.7nC @ 5V | 5V 10V | ±20V | ||||||||
| PHD98N03LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nxpusainc-phd98n03lt118-datasheets-5884.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 111W Tc | TO-252AA | 75A | 240A | 0.0073Ohm | 183 mJ | N-Channel | 3000pF @ 20V | 5.9m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 40nC @ 5V | 5V 10V | ±20V | ||||||||
| R6050JNZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6050jnzc17-datasheets-5732.pdf | TO-3P-3 Full Pack | NOT SPECIFIED | NOT SPECIFIED | 600V | 120W Tc | N-Channel | 4.5nF @ 100V | 83m Ω @ 25A, 15V | 7V @ 5mA | 50A Tc | 120nC @ 15V | 15V | ±30V | |||||||||||||||||||||||||||||||||
| IRFZ24N,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-irfz24n127-datasheets-5869.pdf | TO-220-3 | 3 | EAR99 | ESD PROTECTED | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 45W Tc | TO-220AB | 17A | 68A | 0.07Ohm | 30 mJ | N-Channel | 500pF @ 25V | 70m Ω @ 10A, 10V | 4V @ 1mA | 17A Tc | 19nC @ 10V | 10V | ±20V | |||||||
| PHD110NQ03LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nxpusainc-phd110nq03lt118-datasheets-5870.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 25V | 115W Tc | N-Channel | 2200pF @ 25V | 4.6m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 26.7nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| PHK4NQ10T,518 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/nxpusainc-phk4nq10t518-datasheets-5871.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | 8541.29.00.95 | YES | DUAL | GULL WING | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 2.5W Ta | 4A | 16A | 0.07Ohm | N-Channel | 880pF @ 25V | 70m Ω @ 4A, 10V | 4V @ 1mA | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||
| PHK4NQ20T,518 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phk4nq20t518-datasheets-5872.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | YES | DUAL | GULL WING | 8 | 1 | FET General Purpose Powers | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 6.25W Tc | MS-012 | 4A | 0.13Ohm | N-Channel | 1230pF @ 25V | 130m Ω @ 4A, 10V | 4V @ 1mA | 4A Tc | 26nC @ 10V | 5V 10V | ±20V | ||||||||||||||
| PHD66NQ03LT,118 | NXP USA Inc. | $0.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/nexperiausainc-phb66nq03lt118-datasheets-6694.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 93W Tc | TO-252AA | 66A | 228A | 0.0136Ohm | 90 mJ | N-Channel | 860pF @ 25V | 10.5m Ω @ 25A, 10V | 2V @ 1mA | 66A Tc | 12nC @ 5V | 5V 10V | ±20V | |||||
| PHM12NQ20T,518 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phm12nq20t518-datasheets-5874.pdf | 8-VDFN Exposed Pad | 2 | EAR99 | unknown | YES | DUAL | NO LEAD | 8 | 1 | Not Qualified | R-PDSO-N2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 62.5W Tc | 20.4A | 60A | 0.085Ohm | N-Channel | 1230pF @ 25V | 130m Ω @ 12A, 10V | 4V @ 1mA | 14.4A Tc | 26nC @ 10V | 5V 10V | ±20V | |||||||||||||
| PHD55N03LTA,118 | NXP USA Inc. | $0.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb55n03lta118-datasheets-6300.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 85W Tc | 55A | 220A | 0.018Ohm | 60 mJ | N-Channel | 950pF @ 25V | 14m Ω @ 25A, 10V | 2V @ 1mA | 55A Tc | 20nC @ 5V | 5V 10V | ±20V | ||||||||
| PHB176NQ04T,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb176nq04t118-datasheets-5876.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 40V | 250W Tc | N-Channel | 3620pF @ 25V | 4.3m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 68.9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| PHM15NQ20T,518 | NXP USA Inc. | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phm15nq20t518-datasheets-5877.pdf | 8-VDFN Exposed Pad | 8 | EAR99 | YES | DUAL | NO LEAD | 8 | 1 | Not Qualified | R-PDSO-N8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 62.5W Tc | 17.5A | 60A | 0.085Ohm | 210 mJ | N-Channel | 2170pF @ 30V | 85m Ω @ 15A, 10V | 4V @ 1mA | 17.5A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||
| BUK9635-55,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk963555118-datasheets-5878.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | unknown | YES | SINGLE | GULL WING | 3 | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 85W Tc | 34A | 136A | 0.035Ohm | 45 mJ | N-Channel | 1400pF @ 25V | 35m Ω @ 17A, 5V | 2V @ 1mA | 34A Tc | 5V | ±10V | |||||||||||
| PHB78NQ03LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb78nq03lt118-datasheets-5864.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 107W Tc | 40A | 160A | 0.0135Ohm | 185 mJ | N-Channel | 970pF @ 12V | 9m Ω @ 25A, 10V | 2V @ 1mA | 40A Tc | 11nC @ 4.5V | 5V 10V | ±20V | |||||||
| PHD14NQ20T,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phd14nq20t118-datasheets-5865.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 200V | 125W Tc | N-Channel | 1500pF @ 25V | 230mOhm @ 7A, 10V | 4V @ 1mA | 14A Tc | 38nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||
| PHB95NQ04LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb95nq04lt118-datasheets-5866.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 40V | 157W Tc | N-Channel | 2700pF @ 25V | 7m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 32.7nC @ 5V | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||
| BUK7540-100A,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk7540100a127-datasheets-5867.pdf | TO-220-3 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 138W Tc | TO-220AB | 37A | 149A | 0.04Ohm | 31 mJ | N-Channel | 2293pF @ 25V | 40m Ω @ 40A, 10V | 4V @ 1mA | 37A Tc | 10V | ±20V | ||||||||
| BUK7511-55A,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 3 | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 166W Tc | TO-220AB | 75A | 347A | 0.011Ohm | 211 mJ | N-Channel | 3093pF @ 25V | 11m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 10V | ±20V | |||||||||
| BUK9506-55A,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk950655a127-datasheets-5854.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 300W Tc | TO-220AB | 75A | 616A | 0.0067Ohm | 1100 mJ | N-Channel | 8600pF @ 25V | 5.8m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 4.5V 10V | ±15V | ||||||||
| BUK7616-55A,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk761655a118-datasheets-5855.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | unknown | e3 | TIN | YES | SINGLE | GULL WING | 260 | 3 | 40 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 138W Tc | 65.7A | 263A | 0.016Ohm | 120 mJ | N-Channel | 2245pF @ 25V | 16m Ω @ 25A, 10V | 4V @ 1mA | 65.7A Tc | 10V | ±20V | |||||||||
| BUK9620-100A,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk9620100a118-datasheets-5856.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | unknown | e3 | TIN | YES | SINGLE | GULL WING | 260 | 3 | 40 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 200W Tc | 63A | 253A | 0.022Ohm | 420 mJ | N-Channel | 6385pF @ 25V | 19m Ω @ 25A, 10V | 2V @ 1mA | 63A Tc | 4.5V 10V | ±10V | |||||||||
| BUK7514-55A,127 | NXP USA Inc. | $3.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk751455a127-datasheets-5857.pdf | TO-220-3 | 3 | EAR99 | ESD PROTECTION | unknown | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 166W Tc | TO-220AB | 73A | 266A | 0.014Ohm | 125 mJ | N-Channel | 2464pF @ 25V | 14m Ω @ 25A, 10V | 4V @ 1mA | 73A Tc | 10V | ±20V | |||||
| BUK9616-55A,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk961655a118-datasheets-5859.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e3 | TIN | YES | SINGLE | GULL WING | 260 | 3 | 40 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 138W Tc | 66A | 263A | 0.017Ohm | 120 mJ | N-Channel | 3085pF @ 25V | 15m Ω @ 25A, 10V | 2V @ 1mA | 66A Tc | 5V 10V | ±10V | ||||||||||
| BUK9237-55,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 55V | N-Channel | 1236pF @ 25V | 33m Ω @ 15A, 10V | 2V @ 1mA | 32A Tc | 17.6nC @ 5V | ||||||||||||||||||||||||||||||||||||||
| BUK9508-55A,127 | NXP USA Inc. | $0.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk950855a127-datasheets-5860.pdf | TO-220-3 | 3 | EAR99 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 253W Tc | TO-220AB | 75A | 503A | 0.0085Ohm | 670 mJ | N-Channel | 6021pF @ 25V | 7.5m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 92nC @ 5V | 4.5V 10V | ±15V | |||||||
| PHB145NQ06T,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb145nq06t118-datasheets-5861.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 55V | 250W Tc | N-Channel | 3825pF @ 25V | 6m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 64.7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPD350N06LGBUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 60V | 68W Tc | N-Channel | 800pF @ 30V | 35m Ω @ 29A, 10V | 2V @ 28μA | 29A Tc | 13nC @ 5V | 4.5V 10V | ±20V |
