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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PHD16N03LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nxpusainc-phd16n03lt118-datasheets-5863.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 32.6W Tc | 16A | 32A | 0.067Ohm | N-Channel | 210pF @ 30V | 67m Ω @ 16A, 10V | 2V @ 1mA | 16A Tc | 8.5nC @ 10V | 4.5V 10V | ±15V | ||||||||||||
| BUK9520-55,127 | NXP USA Inc. | $2.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk952055127-datasheets-5851.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, ESD PROTECTION | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 116W Tc | TO-220AB | 52A | 208A | 0.02Ohm | 235 pF | 110 mJ | N-Channel | 2400pF @ 25V | 225ns | 200ns | 20m Ω @ 25A, 5V | 2V @ 1mA | 52A Tc | 5V | ±10V | ||||||
| BUK7615-100A,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk7615100a118-datasheets-5852.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | unknown | e3 | TIN | YES | SINGLE | GULL WING | 260 | 3 | 40 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 230W Tc | 75A | 240A | 0.015Ohm | 120 mJ | N-Channel | 6000pF @ 25V | 15m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 10V | ±20V | ||||||||||||
| BUK7528-55,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk752855127-datasheets-5853.pdf | TO-220-3 | 3 | EAR99 | ESD PROTECTION | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 96W Tc | TO-220AB | 40A | 160A | 0.028Ohm | 160 pF | 70 mJ | N-Channel | 1300pF @ 25V | 62ns | 94ns | 28m Ω @ 20A, 10V | 4V @ 1mA | 40A Tc | 10V | ±16V | |||||||
| BUK9506-55A,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk950655a127-datasheets-5854.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 300W Tc | TO-220AB | 75A | 616A | 0.0067Ohm | 1100 mJ | N-Channel | 8600pF @ 25V | 5.8m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 4.5V 10V | ±15V | |||||||||||
| BS108,126 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/nxpusainc-bs10801126-datasheets-5831.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | EAR99 | 8541.29.00.95 | e3 | Matte Tin (Sn) | NO | BOTTOM | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-PBCY-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 1W Ta | 0.3A | 5Ohm | 15 pF | N-Channel | 120pF @ 25V | 5 Ω @ 100mA, 2.8V | 1.8V @ 1mA | 300mA Ta | 2.8V | ±20V | |||||||||||||||
| BSN254A,126 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/nxpusainc-bsn254a126-datasheets-5836.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | EAR99 | unknown | 8541.29.00.95 | e3 | Matte Tin (Sn) | NO | BOTTOM | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-PBCY-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250V | 250V | 1W Ta | 0.3A | 7Ohm | 15 pF | N-Channel | 120pF @ 25V | 5 Ω @ 300mA, 10V | 2V @ 1mA | 310mA Ta | 2.4V 10V | ±20V | ||||||||||||||
| BSP304A,126 | NXP USA Inc. | $0.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1995 | https://pdf.utmel.com/r/datasheets/nxpusainc-bsp304a126-datasheets-5837.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | 8541.29.00.95 | e3 | TIN | NO | BOTTOM | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | O-PBCY-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300V | 300V | 1W Ta | 0.17A | 15 pF | P-Channel | 90pF @ 25V | 17 Ω @ 170mA, 10V | 2.55V @ 1mA | 170mA Ta | 10V | ±20V | ||||||||||||||
| BUK9611-55A,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk951155a127-datasheets-5668.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 166W Tc | 75A | 266A | 0.012Ohm | 330 mJ | N-Channel | 4230pF @ 25V | 10m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 4.5V 10V | ±10V | ||||||||||
| BUK9528-100A,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk9528100a127-datasheets-5840.pdf | TO-220-3 | 3 | EAR99 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 166W Tc | TO-220AB | 49A | 195A | 0.028Ohm | 45 mJ | N-Channel | 4293pF @ 25V | 27m Ω @ 25A, 10V | 2V @ 1mA | 49A Tc | 4.5V 10V | ±10V | ||||||||||||
| BUK7575-55,127 | NXP USA Inc. | $2.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk757555127-datasheets-5841.pdf | TO-220-3 | 3 | EAR99 | ESD PROTECTION | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 61W Tc | TO-220AB | 19.7A | 79A | 0.075Ohm | 85 pF | 30 mJ | N-Channel | 500pF @ 25V | 45ns | 35ns | 75m Ω @ 10A, 10V | 4V @ 1mA | 19.7A Tc | 10V | ±16V | ||||||
| BUK7614-55,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk761455118-datasheets-5842.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e3 | TIN | YES | SINGLE | GULL WING | 260 | 3 | 40 | 1 | Not Qualified | R-PSSO-G2 | 2013-06-14 00:00:00 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 142W Tc | 68A | 240A | 0.014Ohm | 270 pF | 200 mJ | N-Channel | 2900pF @ 25V | 105ns | 111ns | 14m Ω @ 25A, 10V | 4V @ 1mA | 68A Tc | 10V | ±16V | |||||||||
| BUK7624-55,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk762455118-datasheets-5844.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | unknown | e3 | TIN | YES | SINGLE | GULL WING | 260 | 3 | 40 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 103W Tc | 45A | 180A | 0.024Ohm | 180 pF | 80 mJ | N-Channel | 1500pF @ 25V | 60ns | 53ns | 24m Ω @ 25A, 10V | 4V @ 1mA | 45A Tc | 10V | ±16V | |||||||||
| BST72A,112 | NXP USA Inc. | $0.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/nxpusainc-bst72a112-datasheets-5845.pdf | TO-226-3, TO-92-3 (TO-226AA) | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | 8541.21.00.95 | e3 | TIN | NO | BOTTOM | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-PBCY-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 830mW Ta | 0.19A | 10 pF | N-Channel | 40pF @ 10V | 10 Ω @ 150mA, 5V | 3.5V @ 1mA | 190mA Ta | 5V | 20V | ||||||||||||
| BUK78150-55A,135 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk7815055acux-datasheets-0437.pdf | TO-261-4, TO-261AA | 4 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 8W Tc | 5.5A | 22A | 0.15Ohm | 25 mJ | N-Channel | 230pF @ 25V | 150m Ω @ 5A, 10V | 4V @ 1mA | 5.5A Tc | 10V | ±20V | |||||||||||
| BUK7505-30A,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk750530a127-datasheets-5849.pdf | TO-220-3 | 3 | EAR99 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 230W Tc | TO-220AB | 75A | 400A | 0.005Ohm | 500 mJ | N-Channel | 6000pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 10V | ±20V | ||||||||||||
| BSN254,126 | NXP USA Inc. | $0.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/nxpusainc-bsn254a126-datasheets-5836.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | EAR99 | unknown | e3 | TIN | NO | BOTTOM | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | O-PBCY-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250V | 250V | 1W Ta | 0.3A | 7Ohm | 15 pF | N-Channel | 120pF @ 25V | 5 Ω @ 300mA, 10V | 2V @ 1mA | 310mA Ta | 2.4V 10V | ±20V | |||||||||||||||
| BUK7605-30A,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk760530a118-datasheets-5833.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | unknown | e3 | TIN | YES | SINGLE | GULL WING | 260 | 3 | 40 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 230W Tc | 75A | 400A | 0.005Ohm | 500 mJ | N-Channel | 6000pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 10V | ±20V | ||||||||||||
| BSP254A,126 | NXP USA Inc. | $0.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/nxpusainc-bsp254a126-datasheets-5834.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | 8541.29.00.95 | e3 | TIN | NO | BOTTOM | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | O-PBCY-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250V | 250V | 1W Ta | 0.2A | 15 pF | P-Channel | 90pF @ 25V | 15 Ω @ 200mA, 10V | 2.8V @ 1mA | 200mA Ta | 10V | 20V | ||||||||||||||
| R6020ENZM12C8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6020enzc17-datasheets-5774.pdf | TO-3P-3 Full Pack | 600V | 120W Tc | N-Channel | 1.4nF @ 25V | 196m Ω @ 9.5A, 10V | 4V @ 1mA | 20A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| R6030ENZM12C8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6030enzc17-datasheets-5764.pdf | TO-3P-3 Full Pack | 600V | 120W Tc | N-Channel | 2.1nF @ 25V | 130m Ω @ 14.5A, 10V | 4V @ 1mA | 30A Tc | 85nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| R6015ANZFU7C8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6015anzfu7c8-datasheets-5814.pdf | TO-3P-3 Full Pack | 600V | 110W Tc | N-Channel | 1.7nF @ 25V | 300m Ω @ 7.5A, 10V | 4.15V @ 1mA | 15A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| R6515KNZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6515knzc8-datasheets-5816.pdf | TO-3P-3 Full Pack | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 60W Tc | 15A | 45A | 0.315Ohm | 310 mJ | N-Channel | 1.05nF @ 25V | 315m Ω @ 6.5A, 10V | 5V @ 430μA | 15A Tc | 27.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| R6515KNZC17 | ROHM Semiconductor | $4.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6515knzc8-datasheets-5816.pdf | TO-3P-3 Full Pack | 650V | 60W Tc | N-Channel | 1.05nF @ 25V | 315m Ω @ 6.5A, 10V | 5V @ 430μA | 15A Tc | 27.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| R6020ANZFL1C8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6020anz8u7c8-datasheets-5780.pdf | TO-3P-3 Full Pack | 600V | 120W Tc | N-Channel | 2.04nF @ 25V | 220m Ω @ 10A, 10V | 4.15V @ 1mA | 20A Ta | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| R6025ANZFU7C8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6025anzfl1c8-datasheets-5806.pdf | TO-3P-3 Full Pack | 600V | 150W Tc | N-Channel | 3.25nF @ 10V | 150m Ω @ 12.5A, 10V | 4.5V @ 1mA | 25A Tc | 88nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| SI3134KL3-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-si3134kl3tp-datasheets-5823.pdf | SC-101, SOT-883 | NOT SPECIFIED | NOT SPECIFIED | 20V | 100mW | N-Channel | 120pF @ 16V | 500m Ω @ 150mA, 4.5V | 1.1V @ 250μA | 750mA | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| R6535ENZC17 | ROHM Semiconductor | $6.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6535enzc17-datasheets-5824.pdf | TO-3P-3 Full Pack | 650V | 102W Tc | N-Channel | 2.6nF @ 25V | 115m Ω @ 18.1A, 10V | 4V @ 1.21mA | 35A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| CTLDM8002A-M621H TR | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-ctldm8002am621hbk-datasheets-5287.pdf | 6-XFDFN Exposed Pad | 6 | EAR99 | LOW THRESHOLD, LOGIC LEVEL COMPATIBLE | compliant | 8541.29.00.75 | YES | DUAL | NO LEAD | 260 | 6 | 10 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-N6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 50V | 50V | 1.6W Ta | 0.28A | 1.5A | P-Channel | 70pF @ 25V | 2.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 280mA Ta | 0.72nC @ 4.5V | 5V 10V | 20V | ||||||||||||||
| R6535ENZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6535enzc17-datasheets-5824.pdf | TO-3P-3 Full Pack | 3 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 102W Tc | 35A | 105A | 0.115Ohm | 867 mJ | N-Channel | 2.6nF @ 25V | 115m Ω @ 18.1A, 10V | 4V @ 1.21mA | 35A Tc | 110nC @ 10V | 10V | ±20V |
