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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FCH077N65F-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fch077n65ff155-datasheets-0411.pdf | TO-247-3 | 3 | 15 Weeks | 6.39g | 77mOhm | ACTIVE (Last Updated: 5 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | 40 ns | 35ns | 5 ns | 113 ns | 54A | 30V | SILICON | SWITCHING | 481W Tc | TO-247AB | 650V | N-Channel | 7109pF @ 100V | 77m Ω @ 27A, 10V | 5V @ 5.4mA | 54A Tc | 164nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTQ96N25T | IXYS | $10.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtv96n25t-datasheets-3866.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 625W | 1 | Not Qualified | 22ns | 28 ns | 59 ns | 96A | 30V | SILICON | DRAIN | SWITCHING | 625W Tc | 250A | 0.029Ohm | 2000 mJ | 250V | N-Channel | 6100pF @ 25V | 29m Ω @ 500mA, 10V | 5V @ 1mA | 96A Tc | 114nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXFP3N80 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfa3n80-datasheets-3925.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 100W | 1 | Not Qualified | R-PSFM-T3 | 11ns | 14 ns | 25 ns | 3.6A | 20V | SILICON | DRAIN | SWITCHING | 100W Tc | 14.4A | 400 mJ | 800V | N-Channel | 685pF @ 25V | 3.6 Ω @ 500mA, 10V | 4.5V @ 1mA | 3.6A Tc | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFP460PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | 500V | 20A | TO-247-3 | Lead Free | No SVHC | 3 | 280W | TO-247AC | 20A | 500V | 4V | 280W Tc | 270mOhm | 500V | N-Channel | 4200pF @ 25V | 270mOhm @ 12A, 10V | 4V @ 250μA | 20A Tc | 210nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH76N15T2 | IXYS | $5.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, TrenchT2™ | Through Hole | -55°C~175°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfp76n15t2-datasheets-5436.pdf | TO-247-3 | 30 Weeks | compliant | 150V | 350W Tc | N-Channel | 5800pF @ 25V | 22m Ω @ 38A, 10V | 4.5V @ 250μA | 76A Tc | 97nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH96N25T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtv96n25t-datasheets-3866.pdf | TO-247-3 | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 625W | 1 | Not Qualified | R-PSFM-T3 | 22ns | 28 ns | 59 ns | 96A | 30V | SILICON | DRAIN | SWITCHING | 625W Tc | TO-247AD | 250A | 0.029Ohm | 2000 mJ | 250V | N-Channel | 6100pF @ 25V | 29m Ω @ 500mA, 10V | 5V @ 1mA | 96A Tc | 114nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXTQ64N25P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtt64n25p-datasheets-3795.pdf | 25V | 64A | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 23ns | 20 ns | 60 ns | 64A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | 160A | 0.049Ohm | 1000 mJ | 250V | N-Channel | 3450pF @ 25V | 49m Ω @ 500mA, 10V | 5V @ 250μA | 64A Tc | 105nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| APT7F100B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt7f100b-datasheets-0376.pdf | 1kV | 7.3A | TO-247-3 | Lead Free | 3 | 26 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | PURE MATTE TIN | SINGLE | 3 | 290W | 1 | R-PSFM-T3 | 24 ns | 26ns | 22 ns | 77 ns | 7A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 290W Tc | TO-247AD | 7A | 2Ohm | N-Channel | 1800pF @ 25V | 2 Ω @ 4A, 10V | 5V @ 500μA | 7A Tc | 58nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXFH12N80P | IXYS | $18.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh12n80p-datasheets-0394.pdf | TO-247-3 | 3 | 30 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSFM-T3 | 26ns | 25 ns | 70 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 360W Tc | TO-247AD | 36A | 0.85Ohm | 800 mJ | 800V | N-Channel | 2800pF @ 25V | 850m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 12A Tc | 51nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXTP2R4N120P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta2r4n120p-datasheets-6875.pdf | TO-220-3 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 125W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 25ns | 32 ns | 70 ns | 2.4A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 125W Tc | TO-220AB | 6A | 200 mJ | 1.2kV | N-Channel | 1207pF @ 25V | 7.5 Ω @ 500mA, 10V | 4.5V @ 250μA | 2.4A Tc | 37nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTP260N055T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixta260n055t2-datasheets-9967.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 260A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 480W Tc | TO-220AB | 780A | 0.0033Ohm | 600 mJ | N-Channel | 10800pF @ 25V | 3.3m Ω @ 50A, 10V | 4V @ 250μA | 260A Tc | 140nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTQ50N25T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixth50n25t-datasheets-0253.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 26 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | Pure Tin (Sn) | SINGLE | 3 | 400W | 1 | FET General Purpose Power | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 400W Tc | 0.05Ohm | N-Channel | 4000pF @ 25V | 60m Ω @ 25A, 10V | 5V @ 1mA | 50A Tc | 78nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXKP24N60C5 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkh24n60c5-datasheets-3813.pdf | TO-220-3 | Lead Free | 3 | 28 Weeks | 165MOhm | yes | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 24A | 20V | SILICON | DRAIN | SWITCHING | TO-220AB | 522 mJ | 600V | N-Channel | 2000pF @ 100V | 165m Ω @ 12A, 10V | 3.5V @ 790μA | 24A Tc | 52nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTA260N055T2-7 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta260n055t27-datasheets-0382.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | 260A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 480W Tc | 780A | 0.0033Ohm | 600 mJ | N-Channel | 10800pF @ 25V | 3.3m Ω @ 50A, 10V | 4V @ 250μA | 260A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFA26N50P3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/ixys-ixfa26n50p3-datasheets-3064.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | not_compliant | e3 | Matte Tin (Sn) | 500W | 1 | 26A | 30V | 500V | 500W Tc | N-Channel | 2220pF @ 25V | 230m Ω @ 13A, 10V | 5V @ 4mA | 26A Tc | 42nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA20N65X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | compliant | 650V | 290W Tc | N-Channel | 1450pF @ 25V | 185m Ω @ 10A, 10V | 4.5V @ 250μA | 20A Tc | 27nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA72N30X3-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 300V | 390W Tc | N-Channel | 5400pF @ 25V | 19m Ω @ 36A, 10V | 4.5V @ 1.5mA | 72A Tc | 82nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP460APBFXKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA20N65X-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | 650V | 320W Tc | N-Channel | 1390pF @ 25V | 210m Ω @ 10A, 10V | 5.5V @ 250μA | 20A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH16N60P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfa16n60p3-datasheets-3792.pdf | TO-247-3 | 3 | 24 Weeks | AVALANCHE RATED | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 347W Tc | TO-247AD | 40A | 0.44Ohm | 800 mJ | N-Channel | 1830pF @ 25V | 470m Ω @ 500mA, 10V | 5V @ 1.5mA | 16A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| FQ7N10 | MICROSS/On Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | RoHS Compliant | 4 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH24N65EF-T1-GE3 | Vishay Siliconix | $1.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh24n65eft1ge3-datasheets-0386.pdf | 8-PowerTDFN | 21 Weeks | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 23A | 650V | 202W Tc | N-Channel | 2780pF @ 100V | 158m Ω @ 12A, 10V | 4V @ 250μA | 23A Tc | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R099CPAATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipb60r099cpaatma1-datasheets-0388.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 8 Weeks | 3 | no | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 255W | 1 | Not Qualified | R-PSSO-G2 | 10 ns | 5ns | 60 ns | 31A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 255W Tc | 800 mJ | N-Channel | 2800pF @ 100V | 105m Ω @ 18A, 10V | 3.5V @ 1.2mA | 31A Tc | 80nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFA230N075T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixfa230n075t2-datasheets-3036.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 480W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 230A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 480W Tc | 700A | 0.0042Ohm | 850 mJ | N-Channel | 10500pF @ 25V | 4.2m Ω @ 50A, 10V | 4V @ 1mA | 230A Tc | 178nC @ 10V | 10V | ||||||||||||||||||||||||||||||||
| IXKP20N60C5 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkp20n60c5-datasheets-0375.pdf | TO-220-3 | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 208W | 1 | FET General Purpose Power | Not Qualified | 5ns | 5 ns | 50 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | TO-220AB | 0.2Ohm | 600V | N-Channel | 1520pF @ 100V | 200m Ω @ 10A, 10V | 3.5V @ 1.1mA | 20A Tc | 45nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPI200N25N3GAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipi200n25n3gaksa1-datasheets-0344.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 18 Weeks | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 18 ns | 20ns | 12 ns | 45 ns | 64A | 20V | 250V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | 256A | 0.02Ohm | N-Channel | 7100pF @ 100V | 20m Ω @ 64A, 10V | 4V @ 270μA | 64A Tc | 86nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTH16P20 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixth16p20-datasheets-0348.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Other Transistors | Not Qualified | 26ns | 25 ns | 65 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | 200V | 300W Tc | TO-247AD | 64A | 0.16Ohm | -200V | P-Channel | 2800pF @ 25V | 160m Ω @ 500mA, 10V | 5V @ 250μA | 16A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFA3N120-TRR | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 1200V | 200W Tc | N-Channel | 1050pF @ 25V | 4.5 Ω @ 1.5A, 10V | 5V @ 1.5mA | 3A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL60R065C7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 2A (4 Weeks) | 150°C | -40°C | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipl60r065c7auma1-datasheets-0349.pdf | Contains Lead | 4 | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 600V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | 29A | 135A | 56mOhm | 159 mJ | ||||||||||||||||||||||||||||||||||||||||||||||
| R6020ANJTL | ROHM Semiconductor | $10.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 20 Weeks | 3 | yes | No | e2 | Tin/Copper (Sn/Cu) | SINGLE | GULL WING | 260 | 3 | 1 | 10 | 1 | FET General Purpose Power | R-PSSO-G2 | 40 ns | 60ns | 70 ns | 230 ns | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100W Tc | 80A | 0.25Ohm | 26.7 mJ | 600V | N-Channel | 2040pF @ 25V | 250m Ω @ 10A, 10V | 4.5V @ 1mA | 20A Ta | 65nC @ 10V | 10V | ±30V |
