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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXTT96N20P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | 200V | 600W Tc | N-Channel | 4800pF @ 25V | 24m Ω @ 48A, 10V | 5V @ 250μA | 96A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT140N10P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | 100V | 600W Tc | N-Channel | 4700pF @ 25V | 11m Ω @ 70A, 10V | 5V @ 250μA | 140A Tc | 155nC @ 10V | 10V 15V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPC60 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfpc60pbf-datasheets-9807.pdf | 600V | 16A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Contains Lead | 21 Weeks | 38.000013g | 3 | No | 1 | Single | TO-247-3 | 3.9nF | 19 ns | 54ns | 56 ns | 110 ns | 16A | 20V | 600V | 280W Tc | 400mOhm | 600V | N-Channel | 3900pF @ 25V | 400mOhm @ 9.6A, 10V | 4V @ 250μA | 16A Tc | 210nC @ 10V | 400 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTQ32N65X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixth32n65x-datasheets-3818.pdf | TO-3P-3, SC-65-3 | 15 Weeks | 32A | 650V | 500W Tc | N-Channel | 2205pF @ 25V | 135m Ω @ 16A, 10V | 5.5V @ 250μA | 32A Tc | 54nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH041N65F-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fch041n65ff085-datasheets-0560.pdf | TO-247-3 | 6.39g | ACTIVE, NOT REC (Last Updated: 6 days ago) | yes | not_compliant | NOT SPECIFIED | Single | NOT SPECIFIED | 76A | 650V | 595W Tc | N-Channel | 13566pF @ 25V | 41m Ω @ 38A, 10V | 5V @ 250μA | 76A Tc | 304nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH24N60X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfa24n60x-datasheets-0324.pdf | TO-247-3 | 19 Weeks | 24A | 600V | 400W Tc | N-Channel | 1910pF @ 25V | 175m Ω @ 12A, 10V | 4.5V @ 2.5mA | 24A Tc | 47nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP7N100P | IXYS | $5.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfh7n100p-datasheets-3974.pdf | TO-220-3 | Lead Free | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 7A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 300W Tc | TO-220AB | 7A | 18A | 1kV | N-Channel | 2590pF @ 25V | 1.9 Ω @ 3.5A, 10V | 6V @ 1mA | 7A Tc | 47nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXTH68P20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtt68p20t-datasheets-8430.pdf | TO-247-3 | 3 | 28 Weeks | EAR99 | AVALANCHE RATED | SINGLE | 3 | 1 | Other Transistors | R-PSFM-T3 | 68A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 568W Tc | TO-247AD | 200A | 0.055Ohm | 2500 mJ | P-Channel | 33400pF @ 25V | 55m Ω @ 34A, 10V | 4V @ 250μA | 68A Tc | 380nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFH16N50P3 | IXYS | $7.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfp16n50p3-datasheets-3145.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | 3 | 20 Weeks | 3 | AVALANCHE RATED | Single | 1 | FET General Purpose Power | 19 ns | 44 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 500V | 500V | 330W Tc | TO-247AD | 40A | N-Channel | 1515pF @ 25V | 360m Ω @ 8A, 10V | 5V @ 2.5mA | 16A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| APT56F50L | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt56f50l-datasheets-0540.pdf | TO-264-3, TO-264AA | 3 | 24 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | AVALANCHE RATED | No | e3 | PURE MATTE TIN | SINGLE | 3 | 780W | 1 | R-PSFM-T3 | 38 ns | 45ns | 33 ns | 100 ns | 56A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 780W Tc | N-Channel | 8800pF @ 25V | 100m Ω @ 28A, 10V | 5V @ 2.5mA | 56A Tc | 220nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXTQ110N10P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtt110n10p-datasheets-3867.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | 25ns | 25 ns | 65 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 480W Tc | 250A | 0.015Ohm | 1000 mJ | 100V | N-Channel | 3550pF @ 25V | 15m Ω @ 500mA, 10V | 5V @ 250μA | 110A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFH10N100Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfh12n100-datasheets-2166.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 23ns | 15 ns | 40 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 300W Tc | TO-247AD | 40A | 1kV | N-Channel | 4000pF @ 25V | 1.2 Ω @ 5A, 10V | 4.5V @ 4mA | 10A Tc | 155nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFA130N15X3TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 150V | 390W Tc | N-Channel | 5230pF @ 25V | 9m Ω @ 65A, 10V | 4.5V @ 1.5mA | 130A Tc | 80nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R099CPAAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipp60r099cpaaksa1-datasheets-0516.pdf | TO-220-3 | 3 | 12 Weeks | no | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 255W Tc | TO-220AB | 31A | 93A | 0.105Ohm | 800 mJ | N-Channel | 2800pF @ 100V | 105m Ω @ 18A, 10V | 3.5V @ 1.2mA | 31A Tc | 80nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIHS20N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihs20n50ce3-datasheets-0551.pdf | TO-274AA | 3 | 8 Weeks | 3 | yes | No | SINGLE | 3 | 1 | FET General Purpose Power | 80 ns | 27ns | 44 ns | 32 ns | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 250mW Tc | TO-247AC | 80A | 0.27Ohm | N-Channel | 2942pF @ 25V | 270m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 76nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IPI60R099CPAAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi60r099cpaaksa1-datasheets-0520.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 8 Weeks | no | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 255W Tc | 31A | 93A | 0.105Ohm | 800 mJ | N-Channel | 2800pF @ 100V | 105m Ω @ 18A, 10V | 3.5V @ 1.2mA | 31A Tc | 80nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXTQ102N20T | IXYS | $6.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | TO-3P-3, SC-65-3 | 3 | 10 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 750W | 1 | FET General Purpose Power | Not Qualified | 26ns | 25 ns | 50 ns | 102A | 30V | SILICON | DRAIN | SWITCHING | 750W Tc | 250A | 1200 mJ | 200V | N-Channel | 6800pF @ 25V | 23m Ω @ 500mA, 10V | 4.5V @ 1mA | 102A Tc | 114nC @ 10V | ||||||||||||||||||||||||||||||||||||||||
| FKP330C | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/sanken-fkp330c-datasheets-0524.pdf | TO-3P-3 Full Pack | -3pF | 3 | 36 Weeks | yes | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 330V | 330V | 85W Tc | 120A | 0.063Ohm | 500 mJ | N-Channel | 4600pF @ 25V | 63m Ω @ 15A, 10V | 4.5V @ 1mA | 30A Ta | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFP24N60X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfa24n60x-datasheets-0324.pdf | TO-220-3 | 19 Weeks | 24A | 600V | 400W Tc | N-Channel | 1910pF @ 25V | 175m Ω @ 12A, 10V | 4.5V @ 2.5mA | 24A Tc | 47nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA86N20T | IXYS | $24.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp86n20t-datasheets-0035.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSSO-G2 | 86A | 30V | SILICON | DRAIN | SWITCHING | 480W Tc | 260A | 0.029Ohm | 1000 mJ | 200V | N-Channel | 4500pF @ 25V | 29m Ω @ 500mA, 10V | 5V @ 1mA | 86A Tc | 90nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXTP34N65X2 | IXYS | $6.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixth34n65x2-datasheets-6886.pdf | TO-220-3 | 15 Weeks | compliant | 650V | 540W Tc | N-Channel | 3000pF @ 25V | 96m Ω @ 17A, 10V | 5V @ 250μA | 34A Tc | 54nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ96N15P | IXYS | $28.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtt96n15p-datasheets-3824.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | 33ns | 18 ns | 66 ns | 96A | 20V | SILICON | DRAIN | SWITCHING | 480W Tc | 250A | 0.024Ohm | 1000 mJ | 150V | N-Channel | 3500pF @ 25V | 24m Ω @ 500mA, 10V | 5V @ 250μA | 96A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPP65R065C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp65r065c7xksa1-datasheets-0532.pdf | TO-220-3 | Lead Free | 18 Weeks | 3 | Halogen Free | PG-TO220-3 | 3.02nF | 17 ns | 14ns | 7 ns | 72 ns | 33A | 20V | 650V | 650V | 171W Tc | 58mOhm | N-Channel | 3020pF @ 400V | 65mOhm @ 17.1A, 10V | 4V @ 850μA | 33A Tc | 64nC @ 10V | 65 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP02N50D | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/ixys-ixty02n50dtrl-datasheets-8387.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | 8541.29.00.95 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 25W | 1 | Not Qualified | R-PSFM-T3 | 28 ns | 200mA | 20V | SILICON | DRAIN | SWITCHING | 1.1W Ta 25W Tc | TO-220AD | 0.2A | 0.8A | 500V | N-Channel | 120pF @ 25V | 30 Ω @ 50mA, 0V | 5V @ 25μA | 200mA Tc | Depletion Mode | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTQ72N30T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | TO-3P | 72A | 300V | N-Channel | 72A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA34N65X2 | IXYS | $3.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixta34n65x2-datasheets-0539.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | compliant | 650V | 540W Tc | N-Channel | 3000pF @ 25V | 96m Ω @ 17A, 10V | 5V @ 250μA | 34A Tc | 54nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA30N60X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfp30n60x-datasheets-0441.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 30A | 600V | 500W Tc | N-Channel | 2270pF @ 25V | 155m Ω @ 15A, 10V | 4.5V @ 4mA | 30A Tc | 56nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFP4004 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-auirfp4004-datasheets-0509.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 3 | 16 Weeks | No SVHC | 3 | EAR99 | ULTRA-LOW RESISTANCE | No | Single | 380W | 1 | FET General Purpose Power | 59 ns | 370ns | 190 ns | 160 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 2V | 380W Tc | TO-247AC | 290 mJ | 40V | N-Channel | 8920pF @ 25V | 1.7m Ω @ 195A, 10V | 4V @ 250μA | 195A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTH98N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 98A | 200V | N-Channel | 98A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH54N30T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 54A | 300V | N-Channel | 54A Tc |
