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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTQ90N15T | IXYS | $7.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtq90n15t-datasheets-0103.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 455W | 1 | Not Qualified | 22ns | 19 ns | 44 ns | 90A | 30V | SILICON | DRAIN | SWITCHING | 455W Tc | 250A | 0.02Ohm | 0.75 mJ | 150V | N-Channel | 4100pF @ 25V | 20m Ω @ 45A, 10V | 4.5V @ 1mA | 90A Tc | 80nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXFQ12N80P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfq12n80p-datasheets-0104.pdf | TO-3P-3, SC-65-3 | 3 | 14 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 26ns | 25 ns | 70 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 360W Tc | 0.85Ohm | 800 mJ | 800V | N-Channel | 2800pF @ 25V | 850m Ω @ 500mA, 10V | 5.5V @ 2.5mA | 12A Tc | 51nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXTQ14N60P | IXYS | $0.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta14n60p-datasheets-9417.pdf | 600V | 14A | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 27ns | 26 ns | 70 ns | 14A | 30V | SILICON | DRAIN | SWITCHING | P-CHANNEL | 300W Tc | 42A | 0.55Ohm | 900 mJ | 600V | N-Channel | 2500pF @ 25V | 550m Ω @ 7A, 10V | 5.5V @ 250μA | 14A Tc | 36nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXTA3N110 | IXYS | $30.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixtp3n110-datasheets-3916.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 4.5Ohm | yes | AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 150W | 1 | Not Qualified | R-PSSO-G2 | 15ns | 18 ns | 32 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 1100V | 150W Tc | 3A | 12A | 700 mJ | 1.1kV | N-Channel | 1350pF @ 25V | 4 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPC60R125C6X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP270N06T3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiperFET™, TrenchT3™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfh270n06t3-datasheets-1458.pdf | TO-220-3 | 26 Weeks | yes | unknown | 270mA | 60V | 480W Tc | N-Channel | 12600pF @ 25V | 3.1m Ω @ 100A, 10V | 4V @ 250μA | 270A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP60N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Trench™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixta60n20t-datasheets-0055.pdf | TO-220-3 | 3 | 26 Weeks | EAR99 | AVALANCHE RATED | unknown | SINGLE | 3 | 500W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500W Tc | TO-220AB | 150A | 0.04Ohm | 700 mJ | 200V | N-Channel | 4530pF @ 25V | 40m Ω @ 30A, 10V | 5V @ 250μA | 60A Tc | 73nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SIHB24N65ET1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2018 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb24n65ege3-datasheets-2054.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | 650V | 250W Tc | N-Channel | 2740pF @ 100V | 145m Ω @ 12A, 10V | 4V @ 250μA | 24A Tc | 122nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP76N25T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixta76n25t-datasheets-0048.pdf | TO-220-3 | Lead Free | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 460W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 25ns | 29 ns | 56 ns | 76A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | TO-220AB | 170A | 0.039Ohm | 1500 mJ | 250V | N-Channel | 4500pF @ 25V | 39m Ω @ 500mA, 10V | 5V @ 1mA | 76A Tc | 92nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IPB80R290C3AATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA65R110CFDXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb65r110cfdatma2-datasheets-9662.pdf | TO-220-3 Full Pack | 18 Weeks | 650V | 34.7W Tc | N-Channel | 3240pF @ 100V | 110m Ω @ 12.7A, 10V | 4.5V @ 1.3mA | 31.2A Tc | 118nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH90N15T | IXYS | $2.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixth90n15t-datasheets-0089.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 455W Tc | TO-247AD | 250A | 0.02Ohm | 0.75 mJ | N-Channel | 4100pF @ 25V | 20m Ω @ 45A, 10V | 4.5V @ 1mA | 90A Tc | 80nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| R5016ANX | ROHM Semiconductor | $16.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | TO-220-3 Full Pack | Lead Free | 3 | 3 | yes | No | SINGLE | 260 | 3 | 1 | 10 | 1 | FET General Purpose Power | 40 ns | 50ns | 55 ns | 150 ns | 16A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 50W Tc | TO-220AB | 64A | 0.27Ohm | 500V | N-Channel | 1800pF @ 25V | 270m Ω @ 8A, 10V | 4.5V @ 1mA | 16A Ta | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXFH14N60P | IXYS | $5.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfp14n60p-datasheets-9452.pdf | 600V | 14A | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 23 ns | 27ns | 26 ns | 70 ns | 14A | 30V | 600V | SILICON | DRAIN | SWITCHING | 5.5V | 300W Tc | TO-247AD | 200 ns | 42A | 0.55Ohm | 900 mJ | 600V | N-Channel | 2500pF @ 25V | 5.5 V | 550m Ω @ 7A, 10V | 5.5V @ 2.5mA | 14A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| IXFH20N50P3 | IXYS | $6.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfq20n50p3-datasheets-3225.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | 3 | 20 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | 3 | Single | 1 | FET General Purpose Power | 10 ns | 43 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 500V | 500V | 5V | 380W Tc | TO-247AD | 40A | N-Channel | 1800pF @ 25V | 300m Ω @ 10A, 10V | 5V @ 1.5mA | 20A Tc | 36nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXFQ24N50P2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfq24n50p2-datasheets-0066.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | yes | AVALANCHE RATED | Pure Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 480W Tc | 50A | 0.27Ohm | 750 mJ | N-Channel | 2890pF @ 25V | 270m Ω @ 500mA, 10V | 4.5V @ 1mA | 24A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7759L2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirf7759l2tr-datasheets-0067.pdf | DirectFET™ Isometric L8 | Lead Free | 9 | 16 Weeks | No SVHC | 15 | EAR99 | No | BOTTOM | 125W | 1 | FET General Purpose Power | R-XBCC-N9 | 18 ns | 37ns | 300 ns | 80 ns | 160A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 3.3W Ta 125W Tc | 26A | 640A | 0.0023Ohm | 257 mJ | 75V | N-Channel | 12222pF @ 25V | 2.3m Ω @ 96A, 10V | 4V @ 250μA | 375A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFP10N80P | IXYS | $6.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfa10n80p-datasheets-2794.pdf | TO-220-3 | 10.66mm | 9.15mm | 4.83mm | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 21 ns | 22ns | 22 ns | 62 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 600 mJ | 800V | N-Channel | 2050pF @ 25V | 1.1 Ω @ 5A, 10V | 5.5V @ 2.5mA | 10A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IPL60R095CFD7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 2A (4 Weeks) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r125cfd7xksa1-datasheets-6382.pdf | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC302N20NFDX1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipc302n20nfdx1sa1-datasheets-0075.pdf | Die | 18 Weeks | EAR99 | YES | UNSPECIFIED | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-XXUC-N | SILICON | SINGLE WITH BUILT-IN DIODE | 200V | 200V | 0.1Ohm | N-Channel | 100m Ω @ 2A, 10V | 4V @ 270μA | 1A Tj | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ72N20T | IXYS | $16.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | TO-3P | 72A | 200V | N-Channel | 72A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA65R110CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp65r110cfdxksa1-datasheets-4596.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | 3 | yes | Tin | e3 | Halogen Free | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | 11ns | 6 ns | 68 ns | 31.2A | 20V | SILICON | ISOLATED | SWITCHING | 650V | 34.7W Tc | TO-220AB | 99.6A | 0.11Ohm | 845 mJ | 700V | N-Channel | 3240pF @ 100V | 110m Ω @ 12.7A, 10V | 4.5V @ 1.3mA | 31.2A Tc | 118nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFP450PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | 500V | 14A | TO-247-3 | Lead Free | No SVHC | 3 | 190W | TO-247AC | 14A | 500V | 500V | 190W Tc | 400mOhm | 500V | N-Channel | 2600pF @ 25V | 4 V | 400mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA76N25T | IXYS | $0.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixta76n25t-datasheets-0048.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 460W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 25ns | 29 ns | 56 ns | 76A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 170A | 0.039Ohm | 1500 mJ | 250V | N-Channel | 4500pF @ 25V | 39m Ω @ 500mA, 10V | 5V @ 1mA | 76A Tc | 92nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| FDPF2D3N10C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fdpf2d3n10c-datasheets-0049.pdf | TO-220-3 Full Pack | 20 Weeks | 2.27g | ACTIVE (Last Updated: 2 days ago) | yes | Single | 100V | 45W Tc | N-Channel | 11180pF @ 50V | 2.3m Ω @ 100A, 10V | 4V @ 700μA | 222A Tc | 152nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA60N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Trench™ | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixta60n20t-datasheets-0055.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 3 | 175°C | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 60A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 500W Tc | TO-263AA | 150A | 0.04Ohm | 700 mJ | N-Channel | 4530pF @ 25V | 40m Ω @ 30A, 10V | 5V @ 250μA | 60A Tc | 73nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXTA6N100D2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 1000V | 300W Tc | N-Channel | 2650pF @ 25V | 2.2 Ω @ 3A, 0V | 4.5V @ 250μA | 6A Tj | 95nC @ 5V | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF3004WL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirf3004wl-datasheets-0056.pdf | TO-262-3 Wide Leads | 10.67mm | 11.3mm | 4.83mm | 3 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | Single | 375W | 1 | FET General Purpose Power | 19 ns | 220ns | 130 ns | 90 ns | 240A | 20V | SILICON | SWITCHING | 2V | 375W Tc | TO-262AA | 470 mJ | 40V | N-Channel | 9450pF @ 32V | 2 V | 1.4m Ω @ 195A, 10V | 4V @ 250μA | 240A Tc | 210nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDH047AN08A0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | 75V | 80A | TO-247-3 | Lead Free | 3 | 10 Weeks | 6.39g | 4.7MOhm | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 310W | 1 | FET General Purpose Power | R-PSFM-T3 | 18 ns | 88ns | 45 ns | 40 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 310W Tc | 475 mJ | 75V | N-Channel | 6600pF @ 25V | 4.7m Ω @ 80A, 10V | 4V @ 250μA | 15A Tc | 138nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTQ18N60P | IXYS | $4.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq18n60p-datasheets-0063.pdf | 600V | 18A | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 22ns | 22 ns | 62 ns | 18A | 30V | SILICON | DRAIN | SWITCHING | 360W Tc | 54A | 0.42Ohm | 1000 mJ | 600V | N-Channel | 2500pF @ 25V | 420m Ω @ 9A, 10V | 5.5V @ 250μA | 18A Tc | 49nC @ 10V | 10V | ±30V |
