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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPP04CN10NGXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | 175°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp04cn10ngxksa1-datasheets-0254.pdf | TO-220 | Lead Free | 3 | No SVHC | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | 300W | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 13.8nF | 34 ns | 78ns | 25 ns | 76 ns | 100A | 20V | 100V | SWITCHING | N-CHANNEL | 100V | METAL-OXIDE SEMICONDUCTOR | 3V | 400A | 3.9mOhm | 1000 mJ | 100V | 4.2 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| FDA8440 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fda8440-datasheets-0256.pdf | TO-3P-3, SC-65-3 | 3 | 8 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 306W | 1 | FET General Purpose Power | Not Qualified | 43 ns | 130ns | 290 ns | 435 ns | 30A | 20V | SILICON | SWITCHING | 306W Tc | 500A | 40V | N-Channel | 24740pF @ 25V | 2.1m Ω @ 80A, 10V | 3V @ 250μA | 30A Ta 100A Tc | 450nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPI051N15N5AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi051n15n5aksa1-datasheets-0263.pdf | 3 | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 150V | METAL-OXIDE SEMICONDUCTOR | TO-262AA | 120A | 480A | 0.0051Ohm | 230 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH35N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fch35n60-datasheets-0266.pdf | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | 3 | 12 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 312.5W | 1 | FET General Purpose Power | 34 ns | 120ns | 73 ns | 105 ns | 35A | 30V | SILICON | SWITCHING | 3V | 312.5W Tc | 0.098Ohm | 600V | N-Channel | 6640pF @ 25V | 98m Ω @ 17.5A, 10V | 5V @ 250μA | 35A Tc | 181nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| SIHP38N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp38n60efge3-datasheets-0274.pdf | TO-220-3 | 17 Weeks | TO-220AB | 600V | 313W Tc | N-Channel | 3576pF @ 100V | 70mOhm @ 23.5A, 10V | 4V @ 250μA | 40A Tc | 189nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMPH6050SFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmph6050sfgq7-datasheets-0254.pdf | 23 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6035ENZC8 | ROHM Semiconductor | $12.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-3P-3 Full Pack | 3 | 10 Weeks | No SVHC | 3 | not_compliant | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 35A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 4V | 120W Tc | 105A | 0.102Ohm | 796 mJ | N-Channel | 2720pF @ 25V | 102m Ω @ 18.1A, 10V | 4V @ 1mA | 35A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| R6025ANZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-3P-3 Full Pack | Lead Free | 3 | yes | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | 25A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 150W Tc | 100A | 0.15Ohm | 39 mJ | N-Channel | 3250pF @ 10V | 150m Ω @ 12.5A, 10V | 4.5V @ 1mA | 25A Tc | 88nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FKP300A | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/sanken-fkp300a-datasheets-0236.pdf | TO-3P-3 Full Pack | -3pF | Lead Free | 3 | 36 Weeks | yes | EAR99 | 8541.29.00.95 | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 30A | SILICON | SINGLE | 300V | 300V | 85W Tc | 120A | 0.065Ohm | 400 mJ | N-Channel | 3800pF @ 25V | 65m Ω @ 15A, 10V | 4.5V @ 1mA | 30A Ta | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC302N25N3AX1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineon-ipc302n25n3ax1sa1-datasheets-2980.pdf | Die | Lead Free | 18 Weeks | Halogen Free | Sawn on foil | 250V | N-Channel | 100mOhm @ 2A, 10V | 4V @ 270μA | 1A Tj | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R150CFDAFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp65r150cfdaaksa1-datasheets-9489.pdf | TO-247-3 | 16.03mm | 21.1mm | 5.16mm | Lead Free | 3 | 18 Weeks | 3 | yes | HIGH RELIABILITY | e3 | Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 12.4 ns | 52.8 ns | 22.4A | 30V | 650V | SILICON | SWITCHING | 195.3W Tc | 72A | 0.15Ohm | 614 mJ | N-Channel | 2340pF @ 100V | 150m Ω @ 9.3A, 10V | 4.5V @ 900μA | 22.4A Tc | 86nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXTP2N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixta2n100-datasheets-9903.pdf | TO-220-3 | Lead Free | 3 | 7.5MOhm | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 100W | 1 | FET General Purpose Power | Not Qualified | 15ns | 30 ns | 60 ns | 2A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 100W Tc | TO-220AB | 2A | 8A | 150 mJ | 1kV | N-Channel | 825pF @ 25V | 7 Ω @ 1A, 10V | 4.5V @ 250μA | 2A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTA50N25T | IXYS | $4.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixtp50n25t-datasheets-2212.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 400W Tc | 0.05Ohm | 1500 mJ | N-Channel | 4000pF @ 25V | 50m Ω @ 25A, 10V | 5V @ 1mA | 50A Tc | 78nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IPP60R125CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipp60r125cpxksa1-datasheets-0247.pdf | 600V | 25A | TO-220-3 | Lead Free | 3 | 12 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 208W | 1 | Not Qualified | 15 ns | 5ns | 50 ns | 25A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 208W Tc | TO-220AB | 82A | 708 mJ | N-Channel | 2500pF @ 100V | 125m Ω @ 16A, 10V | 3.5V @ 1.1mA | 25A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPC60R099CPX1SA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 13 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH36P10 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixth36p10-datasheets-0213.pdf | TO-247-3 | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | Single | NOT SPECIFIED | 180W | 1 | Other Transistors | Not Qualified | 37ns | 28 ns | 65 ns | 36A | 20V | SILICON | DRAIN | SWITCHING | 100V | 180W Tc | TO-247AD | 144A | 0.075Ohm | -100V | P-Channel | 2800pF @ 25V | 75m Ω @ 18A, 10V | 5V @ 250μA | 36A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFPS3815PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfps3815pbf-datasheets-0214.pdf | 150V | 105A | TO-274AA | 16.0782mm | 20.8mm | 5.3mm | Lead Free | 3 | 25 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Single | 441W | 1 | FET General Purpose Power | 22 ns | 130ns | 60 ns | 51 ns | 105A | 30V | SILICON | DRAIN | SWITCHING | 441W Tc | 150V | N-Channel | 6810pF @ 25V | 15m Ω @ 63A, 10V | 5V @ 250μA | 105A Tc | 390nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| AUIRFP4110 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-auirfp4110-datasheets-0222.pdf | TO-247-3 | 3 | 16 Weeks | EAR99 | ULTRA LOW RESISTANCE | AEC-Q101 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 370W Tc | TO-247AC | 670A | 0.0045Ohm | 190 mJ | N-Channel | 9620pF @ 50V | 4.5m Ω @ 75A, 10V | 4V @ 250μA | 120A Tc | 210nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FKP280A | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/sanken-fkp280a-datasheets-0227.pdf | TO-3P-3 Full Pack | -3pF | 3 | 36 Weeks | yes | EAR99 | 8541.29.00.95 | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 40A | SILICON | SINGLE | ISOLATED | SWITCHING | 280V | 280V | 85W Tc | 160A | 0.053Ohm | 400 mJ | N-Channel | 3800pF @ 25V | 53m Ω @ 20A, 10V | 4.5V @ 1mA | 40A Ta | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA110N15T2 | IXYS | $5.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 110A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 480W Tc | 800 mJ | N-Channel | 8600pF @ 25V | 13m Ω @ 55A, 10V | 4.5V @ 250μA | 110A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFP14N55X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 23 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R105CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r125cfd7xksa1-datasheets-6382.pdf | 18 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP7718PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfp7718pbf-datasheets-0188.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 517W | 1 | 58 ns | 164ns | 160 ns | 266 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 75V | 75V | 517W Tc | TO-247AC | 2004 mJ | N-Channel | 29550pF @ 25V | 1.8m Ω @ 100A, 10V | 3.7V @ 250μA | 195A Tc | 830nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXKP20N60C5M | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixkp20n60c5m-datasheets-0231.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 32 Weeks | 3 | yes | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 33W | 1 | FET General Purpose Power | Not Qualified | 5ns | 5 ns | 50 ns | 7.6A | 20V | SILICON | SWITCHING | TO-220AB | 0.2Ohm | 600V | N-Channel | 1520pF @ 100V | 200m Ω @ 10A, 10V | 3.5V @ 1.1mA | 7.6A Tc | 30nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDB0630N1507L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdb0630n1507l-datasheets-2960.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 16 Weeks | 1.312g | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | 245 | Single | NOT SPECIFIED | 130A | 150V | 3.8W Ta 300W Tc | N-Channel | 9895pF @ 75V | 6.4m Ω @ 18A, 10V | 4V @ 250μA | 130A Tc | 135nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH14N60P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh14n60p3-datasheets-0202.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | 3 | 24 Weeks | 3 | AVALANCHE RATED | 3 | Single | 1 | FET General Purpose Power | 21 ns | 43 ns | 14A | 30V | SILICON | DRAIN | SWITCHING | 600V | 600V | 327W Tc | TO-247AD | 0.54Ohm | 700 mJ | N-Channel | 1480pF @ 25V | 540m Ω @ 7A, 10V | 5V @ 1mA | 14A Tc | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPW90R340C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipw90r340c3xksa1-datasheets-0203.pdf | TO-247-3 | 18 Weeks | 900V | 208W Tc | N-Channel | 2400pF @ 100V | 340m Ω @ 9.2A, 10V | 3.5V @ 1mA | 15A Tc | 94nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N120HV-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 1200V | 200W Tc | N-Channel | 1100pF @ 25V | 4.5 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA140N12T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/ixys-ixtp140n12t2-datasheets-5029.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | unknown | 120V | 577W Tc | N-Channel | 9700pF @ 25V | 10m Ω @ 70A, 10V | 4.5V @ 250μA | 140A Tc | 174nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLS8409-7TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirls84097p-datasheets-2129.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 16 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 240A | 40V | 375W Tc | N-Channel | 16488pF @ 25V | 0.75m Ω @ 100A, 10V | 2.4V @ 250μA | 240A Tc | 266nC @ 4.5V | 4.5V 10V | ±16V |
