Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IXTR102N65X2 | IXYS | $16.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtr102n65x2-datasheets-0625.pdf | ISOPLUS247™ | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 54A | 650V | 330W Tc | N-Channel | 10900pF @ 25V | 33m Ω @ 51A, 10V | 5V @ 250μA | 54A Tc | 152nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR4N100Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfr4n100q-datasheets-0626.pdf | ISOPLUS247™ | 3 | 36 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 80W | 1 | Not Qualified | 15ns | 18 ns | 32 ns | 3.5A | 20V | SILICON | ISOLATED | SWITCHING | 1000V | 80W Tc | 16A | 3Ohm | 700 mJ | 1kV | N-Channel | 1050pF @ 25V | 3 Ω @ 2A, 10V | 5V @ 1.5mA | 3.5A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFH17N80Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfh17n80q-datasheets-0604.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 27ns | 16 ns | 53 ns | 17A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | TO-247AD | 68A | 0.6Ohm | 1000 mJ | 800V | N-Channel | 3600pF @ 25V | 600m Ω @ 500mA, 10V | 4.5V @ 4mA | 17A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R060C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r060c7xksa1-datasheets-0605.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 16A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 34W Tc | TO-220AB | 135A | 0.06Ohm | 159 mJ | N-Channel | 2850pF @ 400V | 60m Ω @ 15.9A, 10V | 4V @ 800μA | 16A Tc | 68nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| APT20M45SVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 200V | 56A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 3 | No | 300W | 1 | D3 [S] | 4.86nF | 12 ns | 14ns | 7 ns | 43 ns | 56A | 30V | 200V | N-Channel | 4860pF @ 25V | 45mOhm @ 500mA, 10V | 4V @ 1mA | 56A Tc | 195nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB1D7N10CL7 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdb1d7n10cl7-datasheets-0610.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 6 | 20 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 1 | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 250W Tc | TO-263CB | 168A | 1390A | 0.00175Ohm | 80 pF | 595 mJ | N-Channel | 11600pF @ 50V | 194ns | 116ns | 1.65m Ω @ 100A, 15V | 4V @ 700μA | 268A Tc | 163nC @ 10V | 6V 15V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| APT10M19SVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10m19svrg-datasheets-0612.pdf | 100V | 75A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | 370W | 370W | 1 | D3 [S] | 5.28nF | 16 ns | 40ns | 20 ns | 50 ns | 75A | 30V | 100V | N-Channel | 6120pF @ 25V | 19mOhm @ 500mA, 10V | 4V @ 1mA | 75A Tc | 300nC @ 10V | 170 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH102N25T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 102A | 250V | N-Channel | 102A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH15N80 | IXYS | $2.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh14n80-datasheets-4421.pdf | 800V | 15A | TO-247-3 | Lead Free | 3 | 6g | No SVHC | 600mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 300W | 1 | FET General Purpose Power | 33ns | 32 ns | 63 ns | 15A | 20V | 800V | SILICON | DRAIN | SWITCHING | 4.5V | 300W Tc | TO-247AD | 250 ns | 60A | 800V | N-Channel | 4870pF @ 25V | 4.5 V | 600m Ω @ 7.5A, 10V | 4.5V @ 4mA | 15A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFX88N20Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfk88n20q-datasheets-4443.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 20ns | 15 ns | 61 ns | 88A | 30V | SILICON | DRAIN | 500W Tc | 2500 mJ | 200V | N-Channel | 4150pF @ 25V | 30m Ω @ 44A, 10V | 4V @ 4mA | 88A Tc | 146nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ60N30T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3, SC-65-3 | 60A | 300V | N-Channel | 60A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH12N100 | IXYS | $0.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixth12n100-datasheets-0595.pdf | TO-247-3 | Lead Free | 3 | 1.05Ohm | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 33ns | 32 ns | 62 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 300W Tc | TO-247AD | 48A | 1kV | N-Channel | 4000pF @ 25V | 1.05 Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFH40N50Q | IXYS | $5.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh40n50q-datasheets-0596.pdf | 500V | 40A | TO-247-3 | Lead Free | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 20ns | 14 ns | 56 ns | 40A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | TO-247AD | 160A | 0.14Ohm | 2 mJ | 500V | N-Channel | 3800pF @ 25V | 140m Ω @ 500mA, 10V | 4.5V @ 4mA | 40A Tc | 130nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTH102N15T | IXYS | $12.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixth102n15t-datasheets-0597.pdf | TO-247-3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 455W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 14ns | 22 ns | 25 ns | 102A | 20V | SILICON | DRAIN | SWITCHING | 455W Tc | 300A | 0.018Ohm | 750 mJ | 150V | N-Channel | 5220pF @ 25V | 18m Ω @ 500mA, 10V | 5V @ 1mA | 102A Tc | 87nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTH102N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixth102n20t-datasheets-0598.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 750W | 1 | FET General Purpose Power | Not Qualified | 26ns | 25 ns | 50 ns | 102A | 30V | SILICON | DRAIN | SWITCHING | 750W Tc | 250A | 1200 mJ | 200V | N-Channel | 6800pF @ 25V | 23m Ω @ 500mA, 10V | 4.5V @ 1mA | 102A Tc | 114nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXTH300N04T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixth300n04t2-datasheets-0599.pdf | TO-247-3 | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 300A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 480W Tc | TO-247AD | 900A | 0.0025Ohm | 600 mJ | N-Channel | 10700pF @ 25V | 2.5m Ω @ 50A, 10V | 4V @ 250μA | 300A Tc | 145nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFK180N15P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfk180n15p-datasheets-0600.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 20 Weeks | No SVHC | 11MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 830W | 1 | 32ns | 36 ns | 150 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 5V | 830W Tc | 4000 mJ | 150V | N-Channel | 7000pF @ 25V | 11m Ω @ 90A, 10V | 5V @ 4mA | 180A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFH12N100Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfh12n100q-datasheets-0603.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | 3 | 6g | No SVHC | 1.05Ohm | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 300W | 1 | FET General Purpose Power | 20 ns | 23ns | 15 ns | 40 ns | 12A | 20V | 1kV | SILICON | DRAIN | SWITCHING | 1000V | 5.5V | 300W Tc | TO-247AD | 48A | 1kV | N-Channel | 2900pF @ 25V | 5.5 V | 1.05 Ω @ 6A, 10V | 5.5V @ 4mA | 12A Tc | 90nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| TK20N60W,S1VF | Toshiba Semiconductor and Storage | $0.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-247-3 | 16 Weeks | 38.000013g | 3 | No | 1 | Single | TO-247 | 1.68nF | 50 ns | 25ns | 6 ns | 100 ns | 20A | 30V | 600V | 165W Tc | 130mOhm | N-Channel | 1680pF @ 300V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 20A Ta | 48nC @ 10V | 155 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT5015BVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5015bvfrg-datasheets-0587.pdf | 500V | 32A | TO-247-3 | Lead Free | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 370W | 1 | TO-247 [B] | 5.28nF | 12 ns | 14ns | 11 ns | 55 ns | 32A | 30V | 500V | N-Channel | 5280pF @ 25V | 150mOhm @ 500mA, 10V | 4V @ 1mA | 32A Tc | 300nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKC15N60C5 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixkc15n60c5-datasheets-0588.pdf | ISOPLUS220™ | Lead Free | 3 | 32 Weeks | 165MOhm | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 114W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 15A | 20V | SILICON | ISOLATED | SWITCHING | 522 mJ | 600V | N-Channel | 2000pF @ 100V | 165m Ω @ 12A, 10V | 3.5V @ 900μA | 15A Tc | 52nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH70N30Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-247-3 | 16.26mm | 16.26mm | 5.3mm | 3 | 30 Weeks | 3 | EAR99 | AVALANCHE RATED | unknown | 3 | Single | 830W | 1 | FET General Purpose Power | 33 ns | 250ns | 38 ns | 70A | 30V | SILICON | DRAIN | SWITCHING | 830W Tc | TO-247AD | 210A | 0.054Ohm | 1500 mJ | 300V | N-Channel | 4735pF @ 25V | 54m Ω @ 35A, 10V | 6.5V @ 4mA | 70A Tc | 98nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFH80N65X2-4 | IXYS | $14.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfh80n65x24-datasheets-0591.pdf | TO-247-4 | 19 Weeks | compliant | 650V | 890W Tc | N-Channel | 8300pF @ 25V | 38m Ω @ 500mA, 10V | 5V @ 4mA | 80A Tc | 140nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ32N65X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixth32n65x-datasheets-3818.pdf | TO-3P-3, SC-65-3 | 15 Weeks | 32A | 650V | 500W Tc | N-Channel | 2205pF @ 25V | 135m Ω @ 16A, 10V | 5.5V @ 250μA | 32A Tc | 54nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH041N65F-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fch041n65ff085-datasheets-0560.pdf | TO-247-3 | 6.39g | ACTIVE, NOT REC (Last Updated: 6 days ago) | yes | not_compliant | NOT SPECIFIED | Single | NOT SPECIFIED | 76A | 650V | 595W Tc | N-Channel | 13566pF @ 25V | 41m Ω @ 38A, 10V | 5V @ 250μA | 76A Tc | 304nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH24N60X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfa24n60x-datasheets-0324.pdf | TO-247-3 | 19 Weeks | 24A | 600V | 400W Tc | N-Channel | 1910pF @ 25V | 175m Ω @ 12A, 10V | 4.5V @ 2.5mA | 24A Tc | 47nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP7N100P | IXYS | $5.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfh7n100p-datasheets-3974.pdf | TO-220-3 | Lead Free | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 7A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 300W Tc | TO-220AB | 7A | 18A | 1kV | N-Channel | 2590pF @ 25V | 1.9 Ω @ 3.5A, 10V | 6V @ 1mA | 7A Tc | 47nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXTH68P20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtt68p20t-datasheets-8430.pdf | TO-247-3 | 3 | 28 Weeks | EAR99 | AVALANCHE RATED | SINGLE | 3 | 1 | Other Transistors | R-PSFM-T3 | 68A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 568W Tc | TO-247AD | 200A | 0.055Ohm | 2500 mJ | P-Channel | 33400pF @ 25V | 55m Ω @ 34A, 10V | 4V @ 250μA | 68A Tc | 380nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH16N50P3 | IXYS | $7.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfp16n50p3-datasheets-3145.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | 3 | 20 Weeks | 3 | AVALANCHE RATED | Single | 1 | FET General Purpose Power | 19 ns | 44 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 500V | 500V | 330W Tc | TO-247AD | 40A | N-Channel | 1515pF @ 25V | 360m Ω @ 8A, 10V | 5V @ 2.5mA | 16A Tc | 29nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R024P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipw60r024p7xksa1-datasheets-0579.pdf | TO-247-3 | 3 | 18 Weeks | compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 291W Tc | 101A | 386A | 0.024Ohm | 406 mJ | N-Channel | 7144pF @ 400V | 24m Ω @ 42.4A, 10V | 4V @ 2.03mA | 101A Tc | 164nC @ 10V | 10V | ±20V |
