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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTH120N15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 120A | 150V | N-Channel | 120A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ130N15T | IXYS | $7.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtq130n15t-datasheets-0505.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 130A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 750W Tc | 0.012Ohm | 1200 mJ | N-Channel | 9800pF @ 25V | 12m Ω @ 65A, 10V | 4.5V @ 1mA | 130A Tc | 113nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXTH60N30T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 60A | 300V | N-Channel | 60A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH46N30T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-247-3 | 30 Weeks | compliant | 300V | 460W Tc | N-Channel | 4770pF @ 25V | 80m Ω @ 23A, 10V | 5V @ 4mA | 46A Tc | 86nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PCF6680AS | MICROSS/On Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | RoHS Compliant | 4 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA30N60X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfp30n60x-datasheets-0441.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 30A | 600V | 500W Tc | N-Channel | 2270pF @ 25V | 155m Ω @ 15A, 10V | 4.5V @ 4mA | 30A Tc | 56nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFP4004 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-auirfp4004-datasheets-0509.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 3 | 16 Weeks | No SVHC | 3 | EAR99 | ULTRA-LOW RESISTANCE | No | Single | 380W | 1 | FET General Purpose Power | 59 ns | 370ns | 190 ns | 160 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 2V | 380W Tc | TO-247AC | 290 mJ | 40V | N-Channel | 8920pF @ 25V | 1.7m Ω @ 195A, 10V | 4V @ 250μA | 195A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTH98N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 98A | 200V | N-Channel | 98A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH54N30T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 54A | 300V | N-Channel | 54A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH86N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 30 Weeks | TO-247 (IXTH) | 86A | 200V | N-Channel | 86A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA7N100P | IXYS | $60.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixfh7n100p-datasheets-3974.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 7A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 300W Tc | 7A | 18A | N-Channel | 2590pF @ 25V | 1.9 Ω @ 3.5A, 10V | 6V @ 1mA | 7A Tc | 47nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTQ26P20P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtp26p20p-datasheets-1592.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 33ns | 21 ns | 46 ns | 26A | 20V | SILICON | DRAIN | SWITCHING | 200V | 300W Tc | 70A | 0.17Ohm | 1500 mJ | -200V | P-Channel | 2740pF @ 25V | 170m Ω @ 13A, 10V | 4V @ 250μA | 26A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTQ150N06P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq150n06p-datasheets-0489.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | 53ns | 45 ns | 66 ns | 150A | 20V | SILICON | DRAIN | SWITCHING | 480W Tc | 280A | 0.01Ohm | 2500 mJ | 60V | N-Channel | 3000pF @ 25V | 10m Ω @ 75A, 10V | 5V @ 250μA | 150A Tc | 118nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFBF30 | Vishay Siliconix | $0.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbf30pbf-datasheets-9527.pdf | TO-220-3 | 6 Weeks | 3 | No | Single | TO-220AB | 1.2nF | 14 ns | 25ns | 30 ns | 90 ns | 3.6A | 20V | 900V | 125W Tc | 3.7Ohm | N-Channel | 1200pF @ 25V | 3.7Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 78nC @ 10V | 3.7 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ26N50P3 | IXYS | $6.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfp26n50p3-datasheets-1510.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.3mm | 4.9mm | 26 Weeks | 3 | Single | 21 ns | 38 ns | 26A | 30V | 500V | 500W Tc | N-Channel | 2220pF @ 25V | 230m Ω @ 13A, 10V | 5V @ 4mA | 26A Tc | 42nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFP4409 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirfp4409-datasheets-0469.pdf | TO-247-3 | 16 Weeks | 3 | EAR99 | No | 1 | FET General Purpose Power | 18 ns | 23ns | 20 ns | 34 ns | 38A | 20V | Single | 341W Tc | 300V | N-Channel | 5168pF @ 50V | 69m Ω @ 24A, 10V | 5V @ 250μA | 38A Tc | 125nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA220N04T2-7 | IXYS | $32.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta220n04t27-datasheets-0473.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | 21ns | 21 ns | 31 ns | 220A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 360W Tc | 660A | 0.0035Ohm | 600 mJ | 40V | N-Channel | 6820pF @ 25V | 3.5m Ω @ 50A, 10V | 4V @ 250μA | 220A Tc | 112nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFP180N10T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixfa180n10t2-datasheets-5513.pdf | TO-220-3 | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 180A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 480W Tc | TO-220AB | 450A | 0.006Ohm | 750 mJ | N-Channel | 10500pF @ 25V | 6m Ω @ 50A, 10V | 4V @ 250μA | 180A Tc | 185nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIPC46N60CFDX1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 2 (1 Year) | ROHS3 Compliant | 18 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIBC40G | Vishay Siliconix | $1.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfibc40gpbf-datasheets-4018.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 15 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220-3 | 1.3nF | 13 ns | 18ns | 20 ns | 55 ns | 3.5A | 20V | 600V | 40W Tc | 1.2Ohm | N-Channel | 1300pF @ 25V | 1.2Ohm @ 2.1A, 10V | 4V @ 250μA | 3.5A Tc | 60nC @ 10V | 1.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTQ86N25T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | TO-3P-3, SC-65-3 | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | compliant | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 540W Ta | 86A | 190A | 0.037Ohm | 1500 mJ | N-Channel | 5330pF @ 25V | 37m Ω @ 43A, 10V | 5V @ 1mA | 86A Tc | 105nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXTP300N04T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta300n04t2-datasheets-9952.pdf | TO-220-3 | 3 | 17 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 480W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 300A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 480W Tc | TO-220AB | 900A | 0.0025Ohm | 600 mJ | N-Channel | 10700pF @ 25V | 2.5m Ω @ 500mA, 10V | 4V @ 250μA | 300A Tc | 145nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPP60R060C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r060c7xksa1-datasheets-0480.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 35A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 162W Tc | TO-220AB | 0.06Ohm | 159 mJ | N-Channel | 2850pF @ 400V | 60m Ω @ 15.9A, 10V | 4V @ 800μA | 35A Tc | 68nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTA230N075T2-7 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta230n075t27-datasheets-0484.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 6 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | 230A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 480W Tc | 700A | 0.0042Ohm | 850 mJ | N-Channel | 10500pF @ 25V | 4.2m Ω @ 50A, 10V | 4V @ 250μA | 230A Tc | 178nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXKP24N60C5M | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixkp24n60c5m-datasheets-0485.pdf | TO-220-3 Full Pack, Isolated Tab | Lead Free | 3 | 32 Weeks | yes | AVALANCHE RATED, UL RECOGNIZED | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 34W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 5ns | 5 ns | 50 ns | 8.5A | 20V | SILICON | SWITCHING | TO-220AB | 0.165Ohm | 522 mJ | 600V | N-Channel | 2000pF @ 100V | 165m Ω @ 10A, 10V | 3.5V @ 790μA | 8.5A Tc | 52nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPL60R060CFD7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 2A (4 Weeks) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r125cfd7xksa1-datasheets-6382.pdf | 18 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH1N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixth1n100-datasheets-0459.pdf | TO-247-3 | 3 | 53 Weeks | 3 | yes | NOT SPECIFIED | Single | NOT SPECIFIED | 60W | 1 | FET General Purpose Power | Not Qualified | 19ns | 18 ns | 20 ns | 1.5A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 60W Tc | TO-247AD | 6A | 200 mJ | 1kV | N-Channel | 480pF @ 25V | 11 Ω @ 1A, 10V | 4.5V @ 25μA | 1.5A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPZ65R095C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipz65r095c7xksa1-datasheets-0460.pdf | TO-247-4 | Lead Free | 18 Weeks | 4 | Halogen Free | 128W | 1 | PG-TO247-4 | 2.14nF | 12 ns | 8ns | 7 ns | 60 ns | 24A | 30V | 650V | 650V | 128W Tc | 84mOhm | N-Channel | 2140pF @ 400V | 95mOhm @ 11.8A, 10V | 4V @ 590μA | 24A Tc | 45nC @ 10V | 95 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXTP24N65X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixth24n65x2-datasheets-0403.pdf | TO-220-3 | 15 Weeks | compliant | 650V | 390W Tc | N-Channel | 2060pF @ 25V | 145m Ω @ 12A, 10V | 5V @ 250μA | 24A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT18F60B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt18f60b-datasheets-0466.pdf | 600V | 18A | TO-247-3 | Lead Free | 3 | 10 Weeks | yes | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 335W | 1 | R-PSFM-T3 | 20 ns | 23ns | 18 ns | 60 ns | 19A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 335W Tc | 65A | 0.37Ohm | 495 mJ | N-Channel | 3550pF @ 25V | 390m Ω @ 9A, 10V | 5V @ 1mA | 19A Tc | 90nC @ 10V | 10V | ±30V |
