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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFP450PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | 500V | 14A | TO-247-3 | Lead Free | No SVHC | 3 | 190W | TO-247AC | 14A | 500V | 500V | 190W Tc | 400mOhm | 500V | N-Channel | 2600pF @ 25V | 4 V | 400mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA76N25T | IXYS | $0.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixta76n25t-datasheets-0048.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 460W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 25ns | 29 ns | 56 ns | 76A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 170A | 0.039Ohm | 1500 mJ | 250V | N-Channel | 4500pF @ 25V | 39m Ω @ 500mA, 10V | 5V @ 1mA | 76A Tc | 92nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| FDPF2D3N10C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fdpf2d3n10c-datasheets-0049.pdf | TO-220-3 Full Pack | 20 Weeks | 2.27g | ACTIVE (Last Updated: 2 days ago) | yes | Single | 100V | 45W Tc | N-Channel | 11180pF @ 50V | 2.3m Ω @ 100A, 10V | 4V @ 700μA | 222A Tc | 152nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA60N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Trench™ | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixta60n20t-datasheets-0055.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 3 | 175°C | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 60A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 500W Tc | TO-263AA | 150A | 0.04Ohm | 700 mJ | N-Channel | 4530pF @ 25V | 40m Ω @ 30A, 10V | 5V @ 250μA | 60A Tc | 73nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXTA6N100D2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 1000V | 300W Tc | N-Channel | 2650pF @ 25V | 2.2 Ω @ 3A, 0V | 4.5V @ 250μA | 6A Tj | 95nC @ 5V | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF3004WL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirf3004wl-datasheets-0056.pdf | TO-262-3 Wide Leads | 10.67mm | 11.3mm | 4.83mm | 3 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | Single | 375W | 1 | FET General Purpose Power | 19 ns | 220ns | 130 ns | 90 ns | 240A | 20V | SILICON | SWITCHING | 2V | 375W Tc | TO-262AA | 470 mJ | 40V | N-Channel | 9450pF @ 32V | 2 V | 1.4m Ω @ 195A, 10V | 4V @ 250μA | 240A Tc | 210nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FDH047AN08A0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | 75V | 80A | TO-247-3 | Lead Free | 3 | 10 Weeks | 6.39g | 4.7MOhm | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 310W | 1 | FET General Purpose Power | R-PSFM-T3 | 18 ns | 88ns | 45 ns | 40 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 310W Tc | 475 mJ | 75V | N-Channel | 6600pF @ 25V | 4.7m Ω @ 80A, 10V | 4V @ 250μA | 15A Tc | 138nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTQ18N60P | IXYS | $4.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq18n60p-datasheets-0063.pdf | 600V | 18A | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 22ns | 22 ns | 62 ns | 18A | 30V | SILICON | DRAIN | SWITCHING | 360W Tc | 54A | 0.42Ohm | 1000 mJ | 600V | N-Channel | 2500pF @ 25V | 420m Ω @ 9A, 10V | 5.5V @ 250μA | 18A Tc | 49nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXTP86N20T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtp86n20t-datasheets-2857.pdf | TO-220-3 | 3 | 26 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 86A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 480W Tc | TO-220AB | 260A | 0.029Ohm | 1000 mJ | N-Channel | 4500pF @ 25V | 29m Ω @ 500mA, 10V | 5V @ 1mA | 86A Tc | 90nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STD12NM50ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | GULL WING | 260 | STD12 | 3 | 30 | 100W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 15ns | 17 ns | 40 ns | 11A | 25V | SILICON | SINGLE | DRAIN | SWITCHING | 500V | 500V | 100W Tc | TO-252AA | 44A | N-Channel | 850pF @ 50V | 380m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 30nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||
| IPC302N20N3X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipc302n20n3x1sa1-datasheets-9977.pdf | Die | Lead Free | 18 Weeks | Halogen Free | YES | UNSPECIFIED | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-XXUC-N | SILICON | SINGLE WITH BUILT-IN DIODE | 200V | 200V | 0.1Ohm | N-Channel | 100m Ω @ 2A, 10V | 4V @ 260μA | 1A Tj | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA1R4N120P | IXYS | $5.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtp1r4n120p-datasheets-9773.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 13Ohm | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 86W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27ns | 29 ns | 78 ns | 1.4A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 86W Tc | 3A | 1.2kV | N-Channel | 666pF @ 25V | 13 Ω @ 500mA, 10V | 4.5V @ 100μA | 1.4A Tc | 24.8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPA65R095C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa65r095c7xksa1-datasheets-9979.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 14 ns | 12ns | 7 ns | 60 ns | 12A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 34W Tc | TO-220AB | 100A | 0.095Ohm | 118 mJ | N-Channel | 2140pF @ 400V | 95m Ω @ 11.8A, 10V | 4V @ 590μA | 12A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDB0300N1007L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdb0300n1007l-datasheets-9984.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 16 Weeks | 1.312g | No SVHC | 7 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 200A | 100V | 2.7V | 3.8W Ta 250W Tc | N-Channel | 8295pF @ 50V | 3m Ω @ 26A, 10V | 4V @ 250μA | 200A Tc | 113nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS10N3D2C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-ntmfs10n3d2c-datasheets-9996.pdf | 8-PowerTDFN | 20 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 100V | 138W Tc | N-Channel | 6215pF @ 50V | 3.2m Ω @ 67A, 10V | 4V @ 370μA | 151A Tc | 84nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP24N60C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/infineontechnologies-spp24n60c3xksa1-datasheets-0006.pdf | 650V | 24.3A | TO-220-3 | Lead Free | 8 Weeks | 3 | Halogen Free | 240W | 1 | TO-220-3 | 3nF | 13 ns | 21ns | 14 ns | 140 ns | 24.3A | 20V | 600V | 650V | 240W Tc | 140mOhm | 650V | N-Channel | 3000pF @ 25V | 160mOhm @ 15.4A, 10V | 3.9V @ 1.2mA | 24.3A Tc | 135nC @ 10V | 160 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC60R099C6X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 13 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP65R110CFDXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/infineontechnologies-ipp65r110cfdxksa1-datasheets-4596.pdf | TO-220-3 | 18 Weeks | 650V | 277.8W Tc | N-Channel | 3240pF @ 100V | 110m Ω @ 12.7A, 10V | 4.5V @ 1.3mA | 31.2A Tc | 118nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH270N04T4 | IXYS | $2.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT4™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixth270n04t4-datasheets-0011.pdf | TO-247-3 | 28 Weeks | 270A | 40V | 375W Tc | N-Channel | 9140pF @ 25V | 2.4m Ω @ 50A, 10V | 4V @ 250μA | 270A Tc | 182nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS3004-7TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirfs30047trl-datasheets-0012.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 6 | 16 Weeks | No SVHC | 7 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | Tin | No | e3 | SINGLE | GULL WING | 260 | AUIRFS3004 | 1 | 30 | 380W | 1 | FET General Purpose Power | R-PSSO-G6 | 23 ns | 240ns | 160 ns | 91 ns | 240A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 380W Tc | TO-263CB | 400A | 290 mJ | 40V | N-Channel | 9130pF @ 25V | 1.25m Ω @ 195A, 10V | 4V @ 250μA | 240A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| TK25E60X5,S1X | Toshiba Semiconductor and Storage | $20.62 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-220-3 | 16 Weeks | 25A | 600V | 180W Tc | N-Channel | 2400pF @ 300V | 140m Ω @ 7.5A, 10V | 4.5V @ 1.2mA | 25A Ta | 60nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R125C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipw65r125c7xksa1-datasheets-0020.pdf | TO-247-3 | Lead Free | 18 Weeks | 3 | Halogen Free | 1 | PG-TO247-3 | 1.67nF | 14 ns | 15ns | 8 ns | 71 ns | 18A | 20V | 650V | 650V | 101W Tc | N-Channel | 1670pF @ 400V | 125mOhm @ 8.9A, 10V | 4V @ 440μA | 18A Tc | 35nC @ 10V | 125 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA1N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixta1n100-datasheets-0025.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 11Ohm | 3 | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 54W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 19ns | 18 ns | 20 ns | 1.5A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 54W Tc | 6A | 200 mJ | 1kV | N-Channel | 400pF @ 25V | 11 Ω @ 1A, 10V | 4.5V @ 25μA | 1.5A Tc | 14.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXTA260N055T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Surface Mount | -55°C~175°C TJ | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixta260n055t2-datasheets-9967.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 480W Tc | 260A | 780A | 0.0033Ohm | 600 mJ | N-Channel | 10800pF @ 25V | 3.3m Ω @ 50A, 10V | 4V @ 250μA | 260A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXTP18N60PM | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp18n60pm-datasheets-9972.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | yes | AVALANCHE RATED | e3 | PURE TIN | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 9A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 90W Tc | TO-220AB | 9A | 54A | 0.42Ohm | 1000 mJ | N-Channel | 2500pF @ 25V | 420m Ω @ 9A, 10V | 5.5V @ 250μA | 9A Tc | 49nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFH10N80P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfh10n80p-datasheets-2805.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 22ns | 22 ns | 62 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AA | 30A | 600 mJ | 800V | N-Channel | 2050pF @ 25V | 1.1 Ω @ 5A, 10V | 5.5V @ 2.5mA | 10A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| TK12A60W,S4VX | Toshiba Semiconductor and Storage | $0.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 Full Pack | 890pF | 16 Weeks | 35W | 23ns | 5.5 ns | 85 ns | 11.5A | 30V | 35W Tc | 600V | N-Channel | 890pF @ 300V | 300m Ω @ 5.8A, 10V | 3.7V @ 600μA | 11.5A Ta | 25nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP344 | Vishay Siliconix | $1.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp344-datasheets-9934.pdf | TO-247-3 | 15 Weeks | TO-247-3 | 1.4nF | 9.5A | 450V | 150W Tc | N-Channel | 1400pF @ 25V | 630mOhm @ 5.7A, 10V | 4V @ 250μA | 9.5A Tc | 80nC @ 10V | 630 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMT800152DC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Dual Cool™, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdmt800152dc-datasheets-9924.pdf | 8-PowerVDFN | Lead Free | 20 Weeks | 248.52072mg | 8 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 260 | Single | NOT SPECIFIED | 72A | 150V | 3.2W Ta 113W Tc | N-Channel | 5875pF @ 75V | 9m Ω @ 13A, 10V | 4V @ 250μA | 13A Ta 72A Tc | 83nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB060N15N5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb060n15n5atma1-datasheets-9941.pdf | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 6 | 13 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 250W Tc | 136A | 544A | 0.006Ohm | 190 mJ | N-Channel | 5300pF @ 75V | 6m Ω @ 68A, 10V | 4.6V @ 180μA | 136A Tc | 68nC @ 10V | 8V 10V | ±20V |
