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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTA300N04T2-7 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta300n04t27-datasheets-9958.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 480W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | 300A | 20V | SILICON | DRAIN | SWITCHING | 480W Tc | 900A | 0.0025Ohm | 600 mJ | 40V | N-Channel | 10700pF @ 25V | 2.5m Ω @ 50A, 10V | 4V @ 250μA | 300A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FCH110N65F-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fch110n65ff155-datasheets-9959.pdf | TO-247-3 | 3 | 12 Weeks | 6.39g | 110mOhm | ACTIVE (Last Updated: 6 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | 31 ns | 21ns | 5.7 ns | 89 ns | 35A | 30V | SILICON | SWITCHING | 357W Tc | TO-247AB | 809 mJ | 650V | N-Channel | 4895pF @ 100V | 110m Ω @ 17.5A, 10V | 5V @ 3.5mA | 35A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTA340N04T4 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT4™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixta340n04t4-datasheets-9966.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | yes | 40V | 480W Tc | N-Channel | 13000pF @ 25V | 1.7m Ω @ 100A, 10V | 4V @ 250μA | 340A Tc | 256nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP12N70X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-220-3 | 15 Weeks | compliant | 700V | 180W Tc | N-Channel | 960pF @ 25V | 300m Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 19nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N100D2HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 2 (1 Year) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixta3n100d2hv-datasheets-9918.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 24 Weeks | yes | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 125W Tc | 3A | 6Ohm | N-Channel | 1020pF @ 25V | 6 Ω @ 1.5A, 0V | 4.5V @ 250μA | 3A Tj | 37.5nC @ 5V | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA160N10T7 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta160n10t7-datasheets-9919.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 430W | 1 | Not Qualified | R-PSFM-G6 | 61ns | 42 ns | 49 ns | 160A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 430W Tc | 430A | 0.007Ohm | 500 mJ | 100V | N-Channel | 6600pF @ 25V | 7m Ω @ 25A, 10V | 4.5V @ 1mA | 160A Tc | 132nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFH10N80P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfh10n80p-datasheets-2805.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 22ns | 22 ns | 62 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AA | 30A | 600 mJ | 800V | N-Channel | 2050pF @ 25V | 1.1 Ω @ 5A, 10V | 5.5V @ 2.5mA | 10A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| TK12A60W,S4VX | Toshiba Semiconductor and Storage | $0.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-220-3 Full Pack | 890pF | 16 Weeks | 35W | 23ns | 5.5 ns | 85 ns | 11.5A | 30V | 35W Tc | 600V | N-Channel | 890pF @ 300V | 300m Ω @ 5.8A, 10V | 3.7V @ 600μA | 11.5A Ta | 25nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP344 | Vishay Siliconix | $1.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp344-datasheets-9934.pdf | TO-247-3 | 15 Weeks | TO-247-3 | 1.4nF | 9.5A | 450V | 150W Tc | N-Channel | 1400pF @ 25V | 630mOhm @ 5.7A, 10V | 4V @ 250μA | 9.5A Tc | 80nC @ 10V | 630 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMT800152DC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Dual Cool™, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdmt800152dc-datasheets-9924.pdf | 8-PowerVDFN | Lead Free | 20 Weeks | 248.52072mg | 8 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 260 | Single | NOT SPECIFIED | 72A | 150V | 3.2W Ta 113W Tc | N-Channel | 5875pF @ 75V | 9m Ω @ 13A, 10V | 4V @ 250μA | 13A Ta 72A Tc | 83nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB060N15N5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb060n15n5atma1-datasheets-9941.pdf | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 6 | 13 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 250W Tc | 136A | 544A | 0.006Ohm | 190 mJ | N-Channel | 5300pF @ 75V | 6m Ω @ 68A, 10V | 4.6V @ 180μA | 136A Tc | 68nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| AUIRFS4127TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirfs4127-datasheets-1932.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | EAR99 | FAST SWITCHING, ULTRA-LOW RESISTANCE | YES | SINGLE | GULL WING | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 375W Tc | 72A | 300A | 0.022Ohm | 250 mJ | N-Channel | 5380pF @ 50V | 22m Ω @ 44A, 10V | 5V @ 250μA | 72A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFA34N65X2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | 650V | 540W Tc | N-Channel | 3230pF @ 25V | 100m Ω @ 17A, 10V | 5V @ 2.5mA | 34A Tc | 56nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA160N04T2 | IXYS | $1.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta160n04t2-datasheets-9891.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 160A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 250W Tc | 400A | 0.005Ohm | 600 mJ | N-Channel | 4640pF @ 25V | 5m Ω @ 50A, 10V | 4V @ 250μA | 160A Tc | 79nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPA030N10N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa030n10n3gxksa1-datasheets-9893.pdf | TO-220-3 Full Pack | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 41W | 1 | Not Qualified | 42 ns | 38ns | 37 ns | 112 ns | 79A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 41W Tc | TO-220AB | N-Channel | 14800pF @ 50V | 3m Ω @ 79A, 10V | 3.5V @ 270μA | 79A Tc | 206nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPA60R099C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r099c7xksa1-datasheets-9899.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 12A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 33W Tc | TO-220AB | 83A | 0.099Ohm | 97 mJ | N-Channel | 1819pF @ 400V | 99m Ω @ 9.7A, 10V | 4V @ 490μA | 12A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXTA2N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixta2n100-datasheets-9903.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 100W | 1 | Not Qualified | R-PSSO-G2 | 15ns | 30 ns | 60 ns | 2A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 100W Tc | 2A | 8A | 7Ohm | 150 mJ | 1kV | N-Channel | 825pF @ 25V | 7 Ω @ 1A, 10V | 4.5V @ 250μA | 2A Tc | 18nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| 2SK1317-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/renesaselectronicsamerica-2sk1317e-datasheets-9904.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 16 Weeks | No SVHC | 3 | yes | No | PRSS0004ZE-A | SINGLE | 4 | 100W | 1 | FET General Purpose Power | 17 ns | 70ns | 60 ns | 110 ns | 2.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1500V | 4V | 100W Tc | 7A | N-Channel | 990pF @ 10V | 4 V | 12 Ω @ 2A, 15V | 2.5A Ta | 15V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| AUIRLS4030-7TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirls40307trl-datasheets-9907.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 6 | 16 Weeks | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 370W Tc | 190A | 750A | 0.0039Ohm | 320 mJ | N-Channel | 11490pF @ 50V | 3.9m Ω @ 110A, 10V | 2.5V @ 250μA | 190A Tc | 140nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| IPW65R190CFDAFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipw65r190cfdafksa1-datasheets-9913.pdf | TO-247-3 | 16.03mm | 21.1mm | 5.16mm | Lead Free | 3 | 16 Weeks | 3 | yes | HIGH RELIABILITY | e3 | Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 12 ns | 53.2 ns | 17.5A | 30V | 650V | SILICON | SWITCHING | 151W Tc | 57.2A | 0.19Ohm | 484 mJ | N-Channel | 1850pF @ 100V | 190m Ω @ 7.3A, 10V | 4.5V @ 700μA | 17.5A Tc | 68nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| AUIRLS3036-7TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirls30367trl-datasheets-9867.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 6 | 16 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 380W Tc | TO-263CB | 240A | 1000A | 0.0019Ohm | 300 mJ | N-Channel | 11270pF @ 50V | 1.9m Ω @ 180A, 10V | 2.5V @ 250μA | 240A Tc | 160nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| IPI041N12N3GAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb038n12n3gatma1-datasheets-7332.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 18 Weeks | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 35 ns | 52ns | 21 ns | 70 ns | 120A | 20V | 120V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | 480A | 0.0041Ohm | 900 mJ | N-Channel | 13800pF @ 60V | 4.1m Ω @ 100A, 10V | 4V @ 270μA | 120A Tc | 211nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIHF16N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp16n50ce3-datasheets-9522.pdf | TO-220-3 Full Pack | 3 | 14 Weeks | 6.000006g | Unknown | 3 | yes | No | 260 | 3 | 1 | Single | 40 | 38W | 1 | FET General Purpose Power | 27 ns | 156ns | 31 ns | 29 ns | 16A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | 3V | 38W Tc | TO-220AB | 40A | N-Channel | 1900pF @ 25V | 380m Ω @ 8A, 10V | 5V @ 250μA | 16A Tc | 68nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXTP140N055T2 | IXYS | $3.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtp140n055t2-datasheets-9883.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 140A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 250W Tc | TO-220AB | 350A | 0.0054Ohm | 600 mJ | N-Channel | 4760pF @ 25V | 5.4m Ω @ 50A, 10V | 4V @ 250μA | 140A Tc | 82nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SPP20N60S5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp20n60s5xksa1-datasheets-9884.pdf | 3 | 20 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 20A | 40A | 0.19Ohm | 690 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA44N30T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 44A | 300V | N-Channel | 44A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP340N04T4 | IXYS | $4.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT4™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixtp340n04t4-datasheets-9887.pdf | TO-220-3 | 24 Weeks | yes | unknown | 340A | 40V | 480W Tc | N-Channel | 13000pF @ 25V | 1.9m Ω @ 100A, 10V | 4V @ 250μA | 340A Tc | 256nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOK29S50L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | 29A | 500V | 357W Tc | N-Channel | 1312pF @ 100V | 150m Ω @ 14.5A, 10V | 3.9V @ 250μA | 29A Tc | 26.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU06N120P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Short Leads, IPak, TO-251AA | 600mA | 1200V | N-Channel | 600mA Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7739L2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirf7739l2tr-datasheets-9830.pdf | DirectFET™ Isometric L8 | 9.144mm | 558.8μm | 7.1mm | 9 | 16 Weeks | 3 | EAR99 | HIGH RELIABILITY | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 125W | 1 | FET General Purpose Power | R-XBCC-N9 | 21 ns | 71ns | 42 ns | 56 ns | 270A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.8W Ta 125W Tc | 46A | 40V | N-Channel | 11880pF @ 25V | 1m Ω @ 160A, 10V | 4V @ 250μA | 46A Ta 270A Tc | 330nC @ 10V | 10V | ±20V |
