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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Row Spacing | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFP140N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-247-3 | 3 | EAR99 | AVALANCHE RATED, FAST SWITCHING | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 140W Tc | TO-247AC | 33A | 110A | 0.052Ohm | 300 mJ | N-Channel | 1400pF @ 25V | 52m Ω @ 16A, 10V | 4V @ 250μA | 33A Tc | 94nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| NDH8436 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndh8436-datasheets-7622.pdf | 8-LSOP (0.130, 3.30mm Width) | 30V | N-Channel | 560pF @ 15V | 30m Ω @ 5.8A, 10V | 2.8V @ 250μA | 5.8A Ta | 30nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDB4050L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndb4050l-datasheets-7787.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 50V | 50W Tc | N-Channel | 600pF @ 25V | 80mOhm @ 15A, 10V | 2V @ 250μA | 15A Tc | 17nC @ 5V | 5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3803 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE, FAST SWITCHING | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 200W Tc | TO-220AB | 120A | 470A | 0.006Ohm | 610 mJ | N-Channel | 5000pF @ 25V | 6m Ω @ 71A, 10V | 1V @ 250μA | 140A Tc | 140nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||
| NDB7060 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndp7060-datasheets-5032.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 60V | 150W Tc | N-Channel | 3600pF @ 25V | 13m Ω @ 40A, 10V | 4V @ 250μA | 75A Tc | 115nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDS9430 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nds9430-datasheets-7701.pdf | 8-SOIC (0.154, 3.90mm Width) | compliant | 30V | 2.5W Ta | P-Channel | 528pF @ 15V | 60m Ω @ 5.3A, 10V | 3V @ 250μA | 5.3A Ta | 14nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDS8410 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nds8410-datasheets-7687.pdf | 8-SOIC (0.154, 3.90mm Width) | 30V | 2.5W Ta | N-Channel | 1350pF @ 15V | 15m Ω @ 10A, 10V | 1.5V @ 250μA | 10A Ta | 60nC @ 10V | 4.5V 10V | 20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDS9410A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nds9410a-datasheets-7693.pdf | 30V | 7.3A | 8-SOIC (0.154, 3.90mm Width) | 8 | 2.5W | 1 | 10ns | 5 ns | 18 ns | 7.3A | 20V | 2.5W Ta | 30V | N-Channel | 830pF @ 15V | 28m Ω @ 7.3A, 10V | 3V @ 250μA | 7.3A Ta | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ34 | Vishay Siliconix | $0.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlz34pbf-datasheets-1446.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 3 | No | 1 | Single | 88W | 1 | TO-220AB | 1.6nF | 14 ns | 170ns | 56 ns | 30 ns | 30A | 10V | 60V | 88W Tc | 50mOhm | N-Channel | 1600pF @ 25V | 50mOhm @ 18A, 5V | 2V @ 250μA | 30A Tc | 35nC @ 5V | 50 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||
| NDS8435 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nds8435-datasheets-7736.pdf | 8-SOIC (0.154, 3.90mm Width) | 30V | P-Channel | 1500pF @ 15V | 28m Ω @ 7A, 10V | 3V @ 250μA | 7A Ta | 60nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLL2705TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | /files/infineontechnologies-irll2705tr-datasheets-7752.pdf | TO-261-4, TO-261AA | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | Not Qualified | R-PDSO-G4 | SILICON | SINGLE | DRAIN | 55V | 55V | 5.2A | 30A | 0.051Ohm | 110 mJ | N-Channel | 870pF @ 25V | 40m Ω @ 3.8A, 10V | 2V @ 250μA | 3.8A Ta | 48nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR1205 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr1205-datasheets-7758.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 245 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 107W Tc | TO-252AA | 20A | 160A | 0.027Ohm | 210 mJ | N-Channel | 1300pF @ 25V | 27m Ω @ 26A, 10V | 4V @ 250μA | 44A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| ZXMN6A09KTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn6a09ktc-datasheets-6995.pdf&product=diodesincorporated-zxmn6a09ktc-6855074 | 60V | 11.2A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 13 Weeks | 3.949996g | No SVHC | 40mOhm | 3 | no | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 10.1W | 1 | FET General Purpose Powers | R-PSSO-G2 | 4.8 ns | 4.6ns | 14.5 ns | 32.5 ns | 11.8A | 20V | SILICON | DRAIN | SWITCHING | 2.15W Ta | TO-252AA | 7.9A | 60V | N-Channel | 1426pF @ 30V | 40m Ω @ 7.3A, 10V | 3V @ 250μA | 7.7A Ta | 29nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| NDS9435A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-nds9435a-datasheets-7705.pdf | -30V | -5.3A | 8-SOIC (0.154, 3.90mm Width) | 4.05mm | 130mg | No SVHC | 50MOhm | 8 | No | Single | 2.5W | 1 | 7 ns | 13ns | 9 ns | 14 ns | 5.3A | 25V | -30V | 30V | 6.3 mm | 2.5W Ta | -30V | P-Channel | 528pF @ 15V | -1.7 V | 50m Ω @ 5.3A, 10V | 3V @ 250μA | 5.3A Ta | 14nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF820S | Vishay Siliconix | $5.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf820spbf-datasheets-4619.pdf | 500V | 2.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 1 | Single | D2PAK | 360pF | 8 ns | 8.6ns | 16 ns | 33 ns | 2.5A | 20V | 500V | 3.1W Ta 50W Tc | 3Ohm | N-Channel | 360pF @ 25V | 3Ohm @ 1.5A, 10V | 4V @ 250μA | 2.5A Tc | 24nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| NDC652P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndc652p-datasheets-7682.pdf | SOT-23-6 Thin, TSOT-23-6 | SuperSOT™-6 | 30V | 1.6W Ta | P-Channel | 290pF @ 15V | 110mOhm @ 3.1A, 10V | 3V @ 250μA | 2.4A Ta | 20nC @ 10V | 4.5V 10V | -20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDP7050L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndp7050l-datasheets-7667.pdf | TO-220-3 | TO-220-3 | 50V | 150W Tc | N-Channel | 4000pF @ 25V | 15mOhm @ 37.5A, 5V | 2V @ 250μA | 75A Tc | 115nC @ 5V | 5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDS9405 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nds9405-datasheets-7728.pdf | -20V | -4.3A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 2.5W | 24ns | 30 ns | 56 ns | 4.3A | 20V | 2.5W Ta | -20V | P-Channel | 1425pF @ 10V | 100m Ω @ 2A, 10V | 3V @ 250μA | 4.3A Ta | 40nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDS352P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nds352p-datasheets-7674.pdf | TO-236-3, SC-59, SOT-23-3 | SuperSOT-3 | 20V | 500mW Ta | P-Channel | 125pF @ 10V | 350mOhm @ 1A, 10V | 2.5V @ 250μA | 850mA Ta | 4nC @ 5V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDT455N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndt455n-datasheets-7675.pdf | TO-261-4, TO-261AA | SOT-223-4 | 30V | 3W Ta | N-Channel | 1220pF @ 15V | 15mOhm @ 11.5A, 10V | 3V @ 250μA | 11.5A Ta | 61nC @ 10V | 4.5V 10V | 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDT451N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | /files/onsemiconductor-ndt451n-datasheets-7685.pdf | TO-261-4, TO-261AA | 30V | N-Channel | 730pF @ 10V | 50m Ω @ 5.5A, 10V | 3V @ 250μA | 5.5A Ta | 25nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDT452P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndt452p-datasheets-7691.pdf | TO-261-4, TO-261AA | SOT-223-4 | 30V | P-Channel | 525pF @ 10V | 180mOhm @ 3A, 10V | 3V @ 250μA | 3A Ta | 25nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDS9400A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nds9400a-datasheets-7697.pdf | -30V | -3.6A | 8-SOIC (0.154, 3.90mm Width) | 4.05mm | No SVHC | 8 | 2.5W | 1 | 21ns | 8 ns | 21 ns | 3.4A | 20V | -30V | 30V | 6.3 mm | 2.5W Ta | -30V | P-Channel | 350pF @ 10V | -1.6 V | 130m Ω @ 1A, 10V | 2.8V @ 250μA | 3.4A Ta | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NDT453N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndt453n-datasheets-7677.pdf | TO-261-4, TO-261AA | SOT-223-4 | 30V | 3W Ta | N-Channel | 890pF @ 15V | 28mOhm @ 8A, 10V | 3V @ 250μA | 8A Ta | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH20N60 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | /files/ixys-ixfh15n60-datasheets-7594.pdf | 600V | 20A | TO-247-3 | Lead Free | 3 | 6g | No SVHC | 350MOhm | 3 | yes | EAR99 | AVALANCHE RATED | 8541.29.00.95 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 43ns | 40 ns | 70 ns | 20A | 20V | 600V | SILICON | DRAIN | SWITCHING | 4.5V | 300W Tc | 250 ns | 80A | 600V | N-Channel | 4500pF @ 25V | 4.5 V | 350m Ω @ 10A, 10V | 4.5V @ 4mA | 20A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| BSS110 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-bss110-datasheets-7645.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 50V | P-Channel | 40pF @ 25V | 10 Ω @ 170mA, 10V | 2V @ 1mA | 170mA Ta | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL530 | Vishay Siliconix | $0.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl530pbf-datasheets-8562.pdf | 100V | 14A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | TO-220AB | 930pF | 4.7 ns | 100ns | 48 ns | 22 ns | 15A | 10V | 100V | 88W Tc | 160mOhm | 100V | N-Channel | 930pF @ 25V | 160mOhm @ 9A, 5V | 2V @ 250μA | 15A Tc | 28nC @ 5V | 160 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||
| IXFN150N10 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfn150n10-datasheets-7652.pdf | 100V | 150A | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 12mOhm | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | 60ns | 60 ns | 100 ns | 150A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 520W Tc | 560A | 100V | N-Channel | 9000pF @ 25V | 12m Ω @ 75A, 10V | 4V @ 8mA | 150A Tc | 360nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFH35N30 | IXYS | $2.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh35n30-datasheets-7656.pdf | 300V | 35A | TO-247-3 | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 60ns | 45 ns | 75 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 140A | 0.1Ohm | 300V | N-Channel | 4800pF @ 25V | 100m Ω @ 500mA, 10V | 4V @ 4mA | 35A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFH6N90 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh6n90-datasheets-7658.pdf | 900V | 6A | TO-247-3 | Lead Free | 3 | 1.8Ohm | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | 260 | 3 | 1 | 35 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 40ns | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | 6A | 24A | N-Channel | 2600pF @ 25V | 2 Ω @ 3A, 10V | 4.5V @ 2.5mA | 6A Tc | 130nC @ 10V | 10V | ±20V |
