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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF9610 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9610pbf-datasheets-1546.pdf | -200V | -1.8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | 1 | Single | 20W | TO-220AB | 170pF | 8 ns | 15ns | 8 ns | 10 ns | -1.8A | 20V | 200V | 20W Tc | 3Ohm | -200V | P-Channel | 170pF @ 25V | 3Ohm @ 900mA, 10V | 4V @ 250μA | 1.8A Tc | 11nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF830 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -65°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf830pbf-datasheets-8583.pdf | 500V | 4.5A | TO-220-3 | 10.4mm | 9.01mm | 4.6mm | Contains Lead | 6.000006g | 3 | 1 | Single | 74W | 1 | TO-220AB | 610pF | 8.2 ns | 8ns | 5 ns | 42 ns | 4.5A | 20V | 500V | 74W Tc | 1.5Ohm | 500V | N-Channel | 610pF @ 25V | 1.5Ohm @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 38nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF520 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf520pbf-datasheets-9409.pdf | 100V | 9.2A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | 60W | 1 | TO-220AB | 360pF | 8.8 ns | 30ns | 20 ns | 19 ns | 9.2A | 20V | 100V | 60W Tc | 270mOhm | 100V | N-Channel | 360pF @ 25V | 270mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 16nC @ 10V | 270 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF610 | Vishay Siliconix | $0.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf610pbf-datasheets-8599.pdf | 200V | 3.3A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | Unknown | 3 | No | 1 | Single | 3W | 1 | TO-220AB | 140pF | 8.2 ns | 17ns | 8.9 ns | 14 ns | 3.3A | 20V | 200V | 36W Tc | 1.5Ohm | 200V | N-Channel | 140pF @ 25V | 4 V | 1.5Ohm @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF710 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-irf710pbf-datasheets-8514.pdf | 400V | 2A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | TO-220AB | 170pF | 8 ns | 9.9ns | 11 ns | 21 ns | 2A | 20V | 400V | 36W Tc | 3.6Ohm | 400V | N-Channel | 170pF @ 25V | 3.6Ohm @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 17nC @ 10V | 3.6 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRLD024 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-irld024pbf-datasheets-1254.pdf | 60V | 2.5A | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Contains Lead | 4 | 1 | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 870pF | 11 ns | 110ns | 110 ns | 23 ns | 2.5A | 10V | 60V | 1.3W Ta | 100mOhm | 60V | N-Channel | 870pF @ 25V | 100mOhm @ 1.5A, 5V | 2V @ 250μA | 2.5A Ta | 18nC @ 5V | 100 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| IRF740 | Vishay Siliconix | $0.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf740pbf-datasheets-2959.pdf | 400V | 10A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | 125W | 1 | TO-220AB | 1.4nF | 14 ns | 27ns | 24 ns | 50 ns | 10A | 20V | 400V | 125W Tc | 550mOhm | 400V | N-Channel | 1400pF @ 25V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 63nC @ 10V | 550 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRLD014 | Vishay Siliconix | $0.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irld014pbf-datasheets-8551.pdf | 60V | 1.7A | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Contains Lead | 4 | 1 | 1.3W | 4-DIP, Hexdip, HVMDIP | 400pF | 9.3 ns | 110ns | 110 ns | 17 ns | 1.7A | 10V | 60V | 1.3W Ta | 200mOhm | 60V | N-Channel | 400pF @ 25V | 200mOhm @ 1A, 5V | 2V @ 250μA | 1.7A Ta | 8.4nC @ 5V | 200 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| IRFD9120 | Vishay Siliconix | $0.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd9120pbf-datasheets-0574.pdf | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Unknown | 4 | No | 1 | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 390pF | 9.6 ns | 29ns | 29 ns | 21 ns | 1A | 20V | 100V | 1.3W Ta | 600mOhm | -100V | P-Channel | 390pF @ 25V | -4 V | 600mOhm @ 600mA, 10V | 4V @ 250μA | 1A Ta | 18nC @ 10V | 600 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFD210 | Vishay Siliconix | $0.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd210pbf-datasheets-0562.pdf | 200V | 600mA | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Contains Lead | 4 | No | 1 | 1W | 1 | 4-DIP, Hexdip, HVMDIP | 140pF | 8.2 ns | 17ns | 17 ns | 14 ns | 600mA | 20V | 200V | 1W Ta | 1.5Ohm | 200V | N-Channel | 140pF @ 25V | 1.5Ohm @ 360mA, 10V | 4V @ 250μA | 600mA Ta | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| PHK13N03LT,518 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/nexperiausainc-phk13n03lt518-datasheets-7140.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | EAR99 | 8541.29.00.75 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | DUAL | GULL WING | 260 | 8 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 6.25W Tc | MS-012AA | 13.8A | 0.02Ohm | N-Channel | 752pF @ 15V | 20m Ω @ 8A, 10V | 2V @ 250μA | 13.8A Tc | 10.7nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF9630 | Vishay Siliconix | $0.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9630pbf-datasheets-1286.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 3 | 1 | Single | TO-220AB | 700pF | 12 ns | 27ns | 24 ns | 28 ns | 6.5A | 20V | 200V | 74W Tc | 800mOhm | P-Channel | 700pF @ 25V | 800mOhm @ 3.9A, 10V | 4V @ 250μA | 6.5A Tc | 29nC @ 10V | 800 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF620 | Vishay Siliconix | $0.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf620pbf-datasheets-8474.pdf | 200V | 6A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 6.000006g | 3 | 52A | 200V | 1 | Single | 50W | 1 | TO-220AB | 260pF | 7.2 ns | 22ns | 13 ns | 19 ns | 5.2A | 20V | 200V | 50W Tc | 800mOhm | 200V | N-Channel | 260pF @ 25V | 800mOhm @ 3.1A, 10V | 4V @ 250μA | 5.2A Tc | 14nC @ 10V | 800 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF9530 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9530pbf-datasheets-1865.pdf | -100V | -12A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | 88W | 1 | TO-220AB | 860pF | 12 ns | 52ns | 39 ns | 31 ns | 12A | 20V | 100V | 88W Tc | 300mOhm | -100V | P-Channel | 860pF @ 25V | 300mOhm @ 7.2A, 10V | 4V @ 250μA | 12A Tc | 38nC @ 10V | 300 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFD9210 | Vishay Siliconix | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd9210pbf-datasheets-2503.pdf | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | 4 | No | 1 | 1W | 1 | 4-DIP, Hexdip, HVMDIP | 170pF | 8 ns | 12ns | 12 ns | 11 ns | 400mA | 20V | 200V | 1W Ta | 3Ohm | -200V | P-Channel | 170pF @ 25V | 3Ohm @ 240mA, 10V | 4V @ 250μA | 400mA Ta | 8.9nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF530 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | /files/vishaysiliconix-sihfr420age3-datasheets-4094.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | Unknown | 160mOhm | 3 | No | 1 | Single | 88W | 1 | TO-220AB | 670pF | 10 ns | 34ns | 24 ns | 23 ns | 14A | 20V | 100V | 88W Tc | 160mOhm | 100V | N-Channel | 670pF @ 25V | 2 V | 160mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 26nC @ 10V | 160 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFD110 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd110pbf-datasheets-8803.pdf | 100V | 1A | 4-DIP (0.300, 7.62mm) | Contains Lead | 540mOhm | 4 | Lead, Tin | No | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 180pF | 6.9 ns | 16ns | 16 ns | 15 ns | 1A | 20V | 100V | 1.3W Ta | 540mOhm | 100V | N-Channel | 180pF @ 25V | 540mOhm @ 600mA, 10V | 4V @ 250μA | 1A Ta | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF510 | Vishay Siliconix | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf510pbf-datasheets-0849.pdf | 100V | 5.6A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | Unknown | 3 | No | 1 | Single | 43W | 1 | TO-220AB | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 5.6A | 20V | 100V | 43W Tc | 540mOhm | 100V | N-Channel | 180pF @ 25V | 4 V | 540mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFD9110 | Vishay Siliconix | $0.67 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd9110pbf-datasheets-9062.pdf | -100V | -700mA | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Contains Lead | 4 | 1 | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 200pF | 9.6 ns | 29ns | 29 ns | 21 ns | 1A | 20V | 100V | 1.3W Ta | 1.2Ohm | -100V | P-Channel | 200pF @ 25V | 1.2Ohm @ 420mA, 10V | 4V @ 250μA | 700mA Ta | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFD220 | Vishay Siliconix | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd220pbf-datasheets-0078.pdf | 200V | 800mA | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Contains Lead | 4 | no | unknown | e0 | Tin/Lead (Sn/Pb) | 4 | 1 | 1W | FET General Purpose Power | 7.2 ns | 22ns | 22 ns | 19 ns | 800mA | 20V | Single | 1W Ta | 0.8A | 200V | N-Channel | 260pF @ 25V | 800m Ω @ 480mA, 10V | 4V @ 250μA | 800mA Ta | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF9510 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9510pbf-datasheets-9175.pdf | -100V | -4A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | 43W | TO-220AB | 200pF | 10 ns | 27ns | 17 ns | 15 ns | 4A | 20V | 100V | 43W Tc | 1.2Ohm | -100V | P-Channel | 200pF @ 25V | 1.2Ohm @ 2.4A, 10V | 4V @ 250μA | 4A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| PMV31XN,215 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmv31xn215-datasheets-7038.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 280mW Tj | TO-236AB | 5.9A | 0.037Ohm | N-Channel | 410pF @ 20V | 37m Ω @ 1.5A, 4.5V | 1.5V @ 1mA | 5.9A Tc | 5.8nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| PMV60EN,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 280mW Tj | TO-236AB | 4.7A | 0.055Ohm | N-Channel | 350pF @ 30V | 55m Ω @ 2A, 10V | 2V @ 1mA | 4.7A Tc | 9.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| PHB101NQ04T,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb101nq04t118-datasheets-7021.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 157W Tc | 75A | 240A | 0.008Ohm | 200 mJ | N-Channel | 2020pF @ 25V | 8m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 36.6nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| ZXMN3A02X8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-zxmn3a02x8ta-datasheets-6987.pdf | 30V | 6.7A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 3.1mm | 950μm | 3.1mm | Lead Free | 8 | 139.989945mg | No SVHC | 25mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | 40 | 1.8W | 1 | 3.9 ns | 5.5ns | 5.5 ns | 35 ns | 6.7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.1W Ta | 5.3A | 30V | N-Channel | 1400pF @ 25V | 25m Ω @ 12A, 10V | 1V @ 250μA | 5.3A Ta | 26.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| BUK7506-75B,127 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/nxpusainc-buk750675b127-datasheets-7065.pdf | TO-220-3 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 300W Tc | TO-220AB | 75A | 638A | 0.0056Ohm | 852 mJ | N-Channel | 7446pF @ 25V | 5.6m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 91nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| PH4530L,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/nxpusainc-ph4530l115-datasheets-6909.pdf | SC-100, SOT-669 | 4 | EAR99 | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 62.5W Tc | MO-235 | 80A | 0.0072Ohm | 130 mJ | N-Channel | 1972pF @ 10V | 5.7m Ω @ 15A, 10V | 2V @ 1mA | 80A Tc | 23.5nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| ZXMN3A02X8TC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxmn3a02x8ta-datasheets-6987.pdf | 30V | 6.7A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | Lead Free | 8 | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 30 | 1.1W | 1 | Not Qualified | S-PDSO-G8 | 5.5ns | 5.5 ns | 35 ns | 5.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.1W Ta | MO-187AA | 0.025Ohm | 30V | N-Channel | 1400pF @ 25V | 25m Ω @ 12A, 10V | 1V @ 250μA | 5.3A Ta | 26.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| PMFPB6532UP,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmfpb6532up115-datasheets-6402.pdf | 6-UDFN Exposed Pad | YES | 6 | Other Transistors | Single | 20V | 520mW Ta 8.3W Tc | 3.5A | P-Channel | 380pF @ 10V | 70m Ω @ 1A, 4.5V | 1V @ 250μA | 3.5A Ta | 6nC @ 4.5V | Schottky Diode (Isolated) | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMN23UN,135 | NXP USA Inc. | $4.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmn23un135-datasheets-7079.pdf | SC-74, SOT-457 | 6 | EAR99 | FAST SWITCHING, LOW THRESHOLD | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.75W Tc | 6.3A | 25.2A | 0.0344Ohm | N-Channel | 740pF @ 10V | 28m Ω @ 2A, 4.5V | 700mV @ 1mA | 6.3A Tc | 10.6nC @ 4.5V | 1.8V 4.5V | ±8V |
