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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| PMN23UN,135 | NXP USA Inc. | $4.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmn23un135-datasheets-7079.pdf | SC-74, SOT-457 | 6 | EAR99 | FAST SWITCHING, LOW THRESHOLD | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.75W Tc | 6.3A | 25.2A | 0.0344Ohm | N-Channel | 740pF @ 10V | 28m Ω @ 2A, 4.5V | 700mV @ 1mA | 6.3A Tc | 10.6nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| BSH111,215 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/nexperiausainc-bsh111235-datasheets-7005.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 3 | EAR99 | FAST SWITCHING | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | 30 | 1 | 335mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 55V | 55V | 830mW Tc | 4Ohm | 10 pF | N-Channel | 40pF @ 10V | 4 Ω @ 500mA, 4.5V | 1.3V @ 1mA | 335mA Ta | 1nC @ 8V | 1.8V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||
| PMN23UN,165 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmn23un135-datasheets-7079.pdf | SC-74, SOT-457 | 6 | EAR99 | FAST SWITCHING, LOW THRESHOLD | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.75W Tc | 6.3A | 25.2A | 0.0344Ohm | N-Channel | 740pF @ 10V | 28m Ω @ 2A, 4.5V | 700mV @ 1mA | 6.3A Tc | 10.6nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| PSMN005-55B,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/nxpusainc-psmn00555b118-datasheets-7019.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 230W Tc | 75A | 240A | 0.0067Ohm | 268 mJ | N-Channel | 6500pF @ 25V | 5.8m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 103nC @ 5V | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||
| PH5330E,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | SC-100, SOT-669 | 4 | EAR99 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 62.5W Tc | MO-235 | 80A | 250A | 0.0085Ohm | 130 mJ | N-Channel | 2010pF @ 10V | 5.7m Ω @ 15A, 10V | 2.5V @ 1mA | 80A Tc | 21nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| PHB110NQ06LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb110nq06lt118-datasheets-7015.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | unknown | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 200W Tc | 75A | 240A | 0.0093Ohm | 280 mJ | N-Channel | 3960pF @ 25V | 7m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 45nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||
| BUK7E2R3-40C,127 | Nexperia USA Inc. | $1.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/nexperiausainc-buk7e2r340c127-datasheets-6950.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 12 Weeks | 3 | Tin | No | 3 | 333W | 1 | 65 ns | 133ns | 119 ns | 146 ns | 100A | 20V | 40V | 333W Tc | N-Channel | 11323pF @ 25V | 2.3m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 175nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| PH1955L,115 | NXP USA Inc. | $3.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | SC-100, SOT-669 | 4 | EAR99 | 8541.29.00.95 | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 75W Tc | MO-235 | 40A | 160A | 0.021Ohm | 80 mJ | N-Channel | 1992pF @ 25V | 17.3m Ω @ 25A, 10V | 2V @ 1mA | 40A Tc | 18nC @ 5V | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||
| PMV40UN,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nxpusainc-pmv40un215-datasheets-6955.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.9W Tc | TO-236AB | 4.9A | 0.047Ohm | N-Channel | 445pF @ 30V | 47m Ω @ 2A, 4.5V | 700mV @ 1mA | 4.9A Tc | 9.3nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| BUK9504-40A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/nexperiausainc-buk950440a127-datasheets-6959.pdf | TO-220-3 | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | 8541.29.00.75 | e3 | NO | 3 | Single | 300W | 1 | FET General Purpose Power | 62 ns | 309ns | 306 ns | 365 ns | 198A | 15V | 40V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 75A | 794A | 0.0059Ohm | 1600 mJ | 40V | N-Channel | 8260pF @ 25V | 4m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 128nC @ 5V | 4.3V 10V | ±15V | ||||||||||||||||||||||||||
| PHB222NQ04LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb222nq04lt118-datasheets-6974.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 40V | 300W Tc | N-Channel | 7880pF @ 25V | 2.8m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 93.6nC @ 5V | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PH4830L,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/nxpusainc-ph4830l115-datasheets-6976.pdf | SC-100, SOT-669 | 4 | EAR99 | not_compliant | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 62.5W Tc | MO-235 | 84A | 240A | 0.0048Ohm | 121 mJ | N-Channel | 2786pF @ 12V | 4.8m Ω @ 25A, 10V | 2.15V @ 1mA | 84A Tc | 22.9nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| BSN20,235 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/nexperiausainc-bsn20215-datasheets-6726.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | 8541.21.00.95 | e3 | YES | DUAL | GULL WING | 260 | 3 | Single | 30 | 830mW | 1 | 173mA | 20V | 50V | SILICON | SWITCHING | 830mW Tc | 20Ohm | 8 pF | 50V | N-Channel | 25pF @ 10V | 15 Ω @ 100mA, 10V | 1V @ 1mA | 173mA Ta | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| PMV45EN,215 | NXP USA Inc. | $0.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmv45en215-datasheets-6980.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | IEC-60134 | YES | DUAL | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 280mW Tj | TO-236AB | 5.4A | 0.042Ohm | N-Channel | 350pF @ 30V | 42m Ω @ 2A, 10V | 2V @ 1mA | 5.4A Tc | 9.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| ZVN0540A | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zvn0540a-datasheets-6989.pdf | 400V | 90mA | TO-226-3, TO-92-3 (TO-226AA) | Lead Free | 3 | EAR99 | 8541.21.00.95 | e3 | Matte Tin (Sn) | WIRE | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 700mW | 1 | Not Qualified | R-PSIP-W3 | 7ns | 7 ns | 16 ns | 90mA | 20V | SILICON | 700mW Ta | 0.09A | 4 pF | 400V | N-Channel | 70pF @ 25V | 50 Ω @ 100mA, 10V | 3V @ 1mA | 90mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||
| BSH111,235 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/nexperiausainc-bsh111235-datasheets-7005.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 3 | EAR99 | FAST SWITCHING | Tin | No | 8541.29.00.75 | e3 | YES | DUAL | GULL WING | 260 | 3 | Single | 30 | 830mW | 1 | 335mA | 10V | 55V | SILICON | SWITCHING | 830mW Tc | 4Ohm | 10 pF | 55V | N-Channel | 40pF @ 10V | 4 Ω @ 500mA, 4.5V | 1.3V @ 1mA | 335mA Ta | 1nC @ 8V | 1.8V 4.5V | ±10V | |||||||||||||||||||||||||||||||
| BUK7907-55AIE,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/nexperiausainc-buk790755aie127-datasheets-7009.pdf | TO-220-5 | 5 | 12 Weeks | 5 | EAR99 | Tin | No | e3 | NO | 5 | Single | 272W | 1 | FET General Purpose Power | 36 ns | 115ns | 111 ns | 159 ns | 140A | 20V | 55V | SILICON | DRAIN | SWITCHING | 272W Tc | 0.007Ohm | 460 mJ | 55V | N-Channel | 4500pF @ 25V | 7m Ω @ 50A, 10V | 4V @ 1mA | 75A Tc | 116nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| PSMN1R7-25YLC,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | SC-100, SOT-669 | not_compliant | 4 | 2013-06-14 00:00:00 | 25V | 164W Tc | N-Channel | 3735pF @ 12V | 1.9m Ω @ 25A, 10V | 1.95V @ 1mA | 100A Tc | 59nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN3A02N8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxmn3a02n8ta-datasheets-6993.pdf | 30V | 9A | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | 8 | yes | EAR99 | LOW THRESHOLD | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | 40 | 2.5W | 1 | FET General Purpose Power | Not Qualified | 3.9 ns | 5.5ns | 5.5 ns | 35 ns | 9A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.56W Ta | 9A | 0.025Ohm | 30V | N-Channel | 1400pF @ 25V | 25m Ω @ 12A, 10V | 1V @ 250μA | 7.3A Ta | 26.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||
| PHK18NQ03LT,518 | Nexperia USA Inc. | $2.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nexperiausainc-phk18nq03lt518-datasheets-6927.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 16 Weeks | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | No | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | 30 | 1 | FET General Purpose Power | 19 ns | 22ns | 11 ns | 19 ns | 20.3A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | 6.25W Tc | 0.0151Ohm | 50 mJ | N-Channel | 1380pF @ 12V | 8.9m Ω @ 25A, 10V | 2.15V @ 1mA | 20.3A Tc | 10.6nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| BUK7107-55AIE,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk710755aie118-datasheets-6944.pdf | TO-263-5, D2Pak (4 Leads + Tab), TO-263BB | 4 | 5 | EAR99 | Tin | No | e3 | YES | GULL WING | 5 | Single | 272W | 1 | FET General Purpose Power | R-PSSO-G4 | 36 ns | 115ns | 111 ns | 159 ns | 75A | 20V | 55V | SILICON | DRAIN | SWITCHING | 272W Tc | 0.007Ohm | 460 mJ | 55V | N-Channel | 4500pF @ 25V | 7m Ω @ 50A, 10V | 4V @ 1mA | 75A Tc | 116nC @ 10V | Current Sensing | 10V | ±20V | ||||||||||||||||||||||||||||
| BUK7908-40AIE,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/nexperiausainc-buk790840aie127-datasheets-6832.pdf | TO-220-5 | 5 | 12 Weeks | 5 | EAR99 | Tin | No | e3 | NO | 5 | Single | 221W | 1 | FET General Purpose Power | 19 ns | 76ns | 122 ns | 121 ns | 117A | 20V | 40V | SILICON | DRAIN | 221W Tc | 468A | 0.008Ohm | 630 mJ | 40V | N-Channel | 3140pF @ 25V | 8m Ω @ 50A, 10V | 4V @ 1mA | 75A Tc | 84nC @ 10V | Current Sensing | 10V | ±20V | |||||||||||||||||||||||||||||
| PSMN9R0-30YL,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | SC-100, SOT-669 | 4 | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 260 | 4 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 46W Tc | MO-235 | 55A | 223A | 0.0138Ohm | 16 mJ | N-Channel | 1006pF @ 12V | 8m Ω @ 15A, 10V | 2.15V @ 1mA | 61A Tc | 17.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| BUK9880-55A,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/nexperiausainc-buk988055acux-datasheets-3856.pdf | TO-261-4, TO-261AA | 4 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 8W Tc | 7A | 30A | 0.089Ohm | 36 mJ | N-Channel | 584pF @ 25V | 73m Ω @ 8A, 10V | 2V @ 1mA | 7A Tc | 11nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||
| BUK7515-100A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/nexperiausainc-buk7515100a127-datasheets-6859.pdf | TO-220-3 | 3 | 3 | EAR99 | Tin | No | e3 | NO | 3 | Single | 300W | 1 | FET General Purpose Power | 35 ns | 85ns | 70 ns | 150 ns | 75A | 20V | 100V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 240A | 100V | N-Channel | 6000pF @ 25V | 15m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||
| BUK753R1-40B,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | TO-220-3 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 300W Tc | TO-220AB | 75A | 902A | 0.0031Ohm | 1600 mJ | N-Channel | 6808pF @ 25V | 3.1m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 94nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| PH6325L,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-ph6325l115-datasheets-6821.pdf | SC-100, SOT-669 | 4 | 4 | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | 78.7A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 62.5W Tc | MO-235 | 236A | 0.0095Ohm | 115 mJ | N-Channel | 1871pF @ 12V | 6.3m Ω @ 25A, 10V | 2V @ 1mA | 78.7A Tc | 13.3nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| PSMN006-20K,518 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | /files/nexperiausainc-psmn00620k518-datasheets-6888.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | EAR99 | LOW THRESHOLD | 8541.29.00.75 | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 8.3W Tc | MS-012AA | 32A | 60A | 0.0082Ohm | N-Channel | 4350pF @ 20V | 5m Ω @ 5A, 4.5V | 700mV @ 1mA | 32A Tc | 32nC @ 2.5V | 1.8V 4.5V | ±10V | ||||||||||||||||||||||||||||||
| PHD36N03LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/nxpusainc-phd36n03lt118-datasheets-6896.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 57.6W Tc | 43.4A | 173.6A | 0.04Ohm | N-Channel | 690pF @ 25V | 17m Ω @ 25A, 10V | 2V @ 250μA | 43.4A Tc | 18.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SI4410DY,518 | NXP USA Inc. | $0.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-si4410dy518-datasheets-6900.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | 8541.29.00.75 | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 10A | 0.0135Ohm | N-Channel | 13.5m Ω @ 10A, 10V | 1V @ 250μA | 34nC @ 5V | 4.5V 10V | ±20V |
