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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTH30N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixth30n50-datasheets-4431.pdf | TO-247-3 | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 42ns | 26 ns | 110 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | TO-247AD | 120A | 0.17Ohm | 500V | N-Channel | 5680pF @ 25V | 170m Ω @ 500mA, 10V | 4V @ 250μA | 30A Tc | 227nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| APT34M60B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt34m60b-datasheets-4412.pdf | 600V | 34A | TO-247-3 | Lead Free | 3 | 18 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | FAST SWITCHING, AVALANCHE RATED | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 37 ns | 43ns | 34 ns | 115 ns | 36A | 30V | SILICON | Single | DRAIN | SWITCHING | 624W Tc | TO-247AB | 58A | 930 mJ | N-Channel | 6640pF @ 25V | 190m Ω @ 17A, 10V | 5V @ 1mA | 36A Tc | 165nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXTP64N10L2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 | 24 Weeks | compliant | 100V | 357W Tc | N-Channel | 3620pF @ 25V | 32m Ω @ 32A, 10V | 4.5V @ 250μA | 64A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPW47N65C3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-spw47n65c3fksa1-datasheets-4414.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | yes | EAR99 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 415W | 1 | Not Qualified | R-PSFM-T3 | 100 ns | 27ns | 14 ns | 210 ns | 47A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | 415W Tc | TO-247AD | 0.07Ohm | N-Channel | 7000pF @ 25V | 70m Ω @ 30A, 10V | 3.9V @ 2.7mA | 47A Tc | 255nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTT16N50D2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixth16n50d2-datasheets-4362.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 24 Weeks | Single | 695W | TO-268 | 5.25nF | 173ns | 220 ns | 203 ns | 16A | 20V | 500V | 695W Tc | 300mOhm | 500V | N-Channel | 5250pF @ 25V | 240mOhm @ 8A, 0V | 16A Tc | 199nC @ 5V | Depletion Mode | 240 mΩ | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH36N55Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh36n55q-datasheets-4420.pdf | TO-247-3 | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 18ns | 15 ns | 54 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | TO-247AD | 148A | 0.16Ohm | 2 mJ | 550V | N-Channel | 4500pF @ 25V | 160m Ω @ 500mA, 10V | 4.5V @ 4mA | 36A Tc | 128nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXT-1-1N100S1 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SOIC | 30 Weeks | 1.5A | 1000V | N-Channel | 1.5A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH14N80 | IXYS | $3.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh14n80-datasheets-4421.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 33ns | 32 ns | 63 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 250 ns | 56A | 0.7Ohm | 800V | N-Channel | 4870pF @ 25V | 150ns | 100ns | 700m Ω @ 500mA, 10V | 4.5V @ 4mA | 14A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFR24N90P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfr24n90p-datasheets-4422.pdf | ISOPLUS247™ | 3 | 30 Weeks | yes | UL RECOGNIZED, AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 13A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 900V | 900V | 230W Tc | 48A | 0.46Ohm | 1000 mJ | N-Channel | 7200pF @ 25V | 460m Ω @ 12A, 10V | 6.5V @ 1mA | 13A Tc | 130nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| APT1204R7SFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt1204r7bfllg-datasheets-2316.pdf | 1.2kV | 3.5A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 3 | Tin | No | 135W | 1 | D3 [S] | 715pF | 7 ns | 2ns | 24 ns | 20 ns | 3.5A | 30V | 1200V | N-Channel | 715pF @ 25V | 4.7Ohm @ 1.75A, 10V | 5V @ 1mA | 3.5A Tc | 31nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK88N30P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfh88n30p-datasheets-7053.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | No SVHC | 40mOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | 24ns | 25 ns | 96 ns | 88A | 20V | SILICON | DRAIN | SWITCHING | 5V | 600W Tc | 220A | 2000 mJ | 300V | N-Channel | 6300pF @ 25V | 40m Ω @ 44A, 10V | 5V @ 4mA | 88A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFT23N60Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft23n60q-datasheets-4403.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | R-PSSO-G2 | 20ns | 20 ns | 45 ns | 23A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | 92A | 0.32Ohm | 1500 mJ | 600V | N-Channel | 3300pF @ 25V | 320m Ω @ 500mA, 10V | 4.5V @ 4mA | 23A Tc | 90nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXFK48N60P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfx48n60p-datasheets-4374.pdf | 600V | 48A | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | Not Qualified | 25ns | 22 ns | 85 ns | 48A | 30V | SILICON | DRAIN | SWITCHING | 5V | 830W Tc | 110A | 2000 mJ | 600V | N-Channel | 8860pF @ 25V | 135m Ω @ 500mA, 10V | 5V @ 8mA | 48A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| APT13F120S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt13f120b-datasheets-4878.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 23 Weeks | D3Pak | 4.765nF | 14A | 1200V | 625W Tc | N-Channel | 4765pF @ 25V | 1.2Ohm @ 7A, 10V | 5V @ 1mA | 14A Tc | 145nC @ 10V | 1.2 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH3206LS | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 3 (168 Hours) | GaNFET (Gallium Nitride) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/transphorm-tph3206ls-datasheets-4406.pdf | 3-PowerDFN | 10 Weeks | yes | 600V | 96W Tc | N-Channel | 760pF @ 480V | 180m Ω @ 11A, 8V | 2.6V @ 500μA | 17A Tc | 9.3nC @ 4.5V | 10V | ±18V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT1003RSFLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | 1kV | 4A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 30 Weeks | 3 | No | 139W | 1 | D3 [S] | 694pF | 8 ns | 4ns | 10 ns | 25 ns | 4A | 30V | 1000V | N-Channel | 694pF @ 25V | 3Ohm @ 2A, 10V | 5V @ 1mA | 4A Tc | 34nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT20M45BVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20m45bvfrg-datasheets-4410.pdf | 200V | 56A | TO-247-3 | Lead Free | 3 | 34 Weeks | EAR99 | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 300W | 1 | R-PSFM-T3 | 12 ns | 14ns | 7 ns | 43 ns | 56A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | TO-247AD | 224A | 0.045Ohm | N-Channel | 4860pF @ 25V | 45m Ω @ 500mA, 10V | 4V @ 1mA | 56A Tc | 195nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXKC40N60C | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixkc40n60c-datasheets-4394.pdf | ISOPLUS220™ | Lead Free | 3 | 32 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | 5ns | 4.5 ns | 67 ns | 28A | 20V | SILICON | ISOLATED | SWITCHING | TO-220AB | 24A | 0.096Ohm | 690 mJ | 600V | N-Channel | 4800pF @ 25V | 95m Ω @ 28A, 10V | 3.9V @ 2mA | 28A Tc | 230nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTR30N25 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixtr30n25-datasheets-4395.pdf | ISOPLUS247™ | 3 | 10 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | Not Qualified | 19ns | 17 ns | 79 ns | 25A | 20V | SILICON | ISOLATED | SWITCHING | 150W Tc | 120A | 0.075Ohm | 1000 mJ | 250V | N-Channel | 3950pF @ 25V | 75m Ω @ 15A, 10V | 4V @ 250μA | 25A Tc | 136nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| APT20M45SVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Surface Mount, Through Hole | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20m45svrg-datasheets-4396.pdf | 200V | 56A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | 280W | 300W | 1 | D3 [S] | 3.35nF | 12 ns | 14ns | 7 ns | 43 ns | 56A | 30V | 200V | N-Channel | 4860pF @ 25V | 45mOhm @ 500mA, 10V | 4V @ 1mA | 56A Tc | 195nC @ 10V | 160 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR102N30P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfr102n30p-datasheets-4397.pdf | ISOPLUS247™ | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | Not Qualified | 28ns | 30 ns | 130 ns | 60A | 20V | SILICON | ISOLATED | SWITCHING | 250W Tc | 250A | 2500 mJ | 300V | N-Channel | 7500pF @ 25V | 36m Ω @ 51A, 10V | 5V @ 4mA | 60A Tc | 224nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTH420N04T2 | IXYS | $35.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixth420n04t2-datasheets-4398.pdf | TO-247-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 420A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 935W Tc | 1050A | 0.002Ohm | 960 mJ | N-Channel | 19700pF @ 25V | 2m Ω @ 100A, 10V | 3.5V @ 250μA | 420A Tc | 315nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFX80N60P3 | IXYS | $17.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfk80n60p3-datasheets-9089.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 247 | AVALANCHE RATED | unknown | 3 | Single | 1.3kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 48 ns | 25ns | 8 ns | 87 ns | 80A | 30V | SILICON | DRAIN | SWITCHING | 1300W Tc | 200A | 0.07Ohm | 2000 mJ | 600V | N-Channel | 13100pF @ 25V | 70m Ω @ 500mA, 10V | 5V @ 8mA | 80A Tc | 190nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTT30N50L | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixth30n50l-datasheets-4278.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | yes | unknown | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 500V | 500V | 400W Tc | 60A | 0.2Ohm | 1500 mJ | N-Channel | 10200pF @ 25V | 200m Ω @ 15A, 10V | 4.5V @ 250μA | 30A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| APT5020SVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5020svfrg-datasheets-4383.pdf | 500V | 26A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 3 | IN PRODUCTION (Last Updated: 1 month ago) | No | 300W | 300W | 1 | D3 [S] | 4.86nF | 12 ns | 10ns | 8 ns | 50 ns | 26A | 30V | 500V | N-Channel | 4440pF @ 25V | 200mOhm @ 500mA, 10V | 4V @ 1mA | 26A Tc | 225nC @ 10V | 45 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTR200N10P | IXYS | $14.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtr200n10p-datasheets-4384.pdf | ISOPLUS247™ | Lead Free | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 35ns | 90 ns | 150 ns | 120A | 20V | SILICON | ISOLATED | SWITCHING | 300W Tc | 400A | 0.008Ohm | 4000 mJ | 100V | N-Channel | 7600pF @ 25V | 8m Ω @ 60A, 10V | 5V @ 500μA | 120A Tc | 235nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFT94N30P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfh94n30p3-datasheets-3561.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | 2 | 26 Weeks | 3 | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | Single | 1 | FET General Purpose Power | R-PSSO-G2 | 23 ns | 49 ns | 94A | 20V | SILICON | DRAIN | SWITCHING | 300V | 1040W Tc | 2500 mJ | N-Channel | 5510pF @ 25V | 36m Ω @ 47A, 10V | 5V @ 4mA | 94A Tc | 102nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFX520N075T2 | IXYS | $13.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfk520n075t2-datasheets-5624.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 1.25kW | 1 | FET General Purpose Power | 520A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 1250W Tc | 0.0022Ohm | N-Channel | 41000pF @ 25V | 2.2m Ω @ 100A, 10V | 5V @ 8mA | 520A Tc | 545nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| APT5020BVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5020bvfrg-datasheets-4388.pdf | 500V | 26A | TO-247-3 | Lead Free | 24 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | No | 280W | 300W | 1 | TO-247 [B] | 4.32nF | 12 ns | 10ns | 8 ns | 50 ns | 26A | 30V | 500V | N-Channel | 4440pF @ 25V | 200mOhm @ 500mA, 10V | 4V @ 1mA | 26A Tc | 225nC @ 10V | 240 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| R6030JNZC8 | ROHM Semiconductor | $15.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-3P-3 Full Pack | NOT SPECIFIED | NOT SPECIFIED | 600V | 93W Tc | N-Channel | 2500pF @ 100V | 143m Ω @ 15A, 15V | 7V @ 5.5mA | 30A Tc | 74nC @ 15V | 15V | ±30V |
