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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SUP70040E-GE3 | Vishay Siliconix | $3.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup70040ege3-datasheets-2588.pdf | TO-220-3 | Lead Free | 3 | 14 Weeks | Unknown | 3 | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 4V | 375W Tc | TO-220AB | 480A | 0.004Ohm | 266 mJ | N-Channel | 5100pF @ 50V | 4m Ω @ 20A, 10V | 4V @ 250μA | 120A Tc | 120nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| R6020ENZ1C9 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-247-3 | 3 | 10 Weeks | No SVHC | 3 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 4V | 120W Tc | 80A | N-Channel | 1400pF @ 25V | 196m Ω @ 9.5A, 10V | 4V @ 1mA | 20A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI9Z24GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfi9z24gpbf-datasheets-2604.pdf | -60V | -8.5A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | 3 | No | 1 | Single | 37W | 1 | TO-220-3 | 570pF | 13 ns | 68ns | 29 ns | 15 ns | -8.5A | 20V | 60V | 37W Tc | 280mOhm | -60V | P-Channel | 570pF @ 25V | 280mOhm @ 5.1A, 10V | 4V @ 250μA | 8.5A Tc | 19nC @ 10V | 280 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TK35A08N1,S4X | Toshiba Semiconductor and Storage | $0.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | EAR99 | No | 1 | Single | FET General Purpose Power | 28 ns | 11ns | 8.8 ns | 35 ns | 35A | 20V | 80V | 30W Tc | 55A | N-Channel | 1700pF @ 40V | 12.2m Ω @ 17.5A, 10V | 4V @ 300μA | 35A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STH410N4F7-6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F7 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sth410n4f72ag-datasheets-0561.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 22 Weeks | No SVHC | 7 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STH410 | NOT SPECIFIED | 200A | 40V | 4.5V | 365W Tc | N-Channel | 11500pF @ 25V | 1.1m Ω @ 90A, 10V | 4.5V @ 250μA | 200A Tc | 141nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN95H8D5HCTI | Diodes Incorporated | $1.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn95h8d5hcti-datasheets-2399.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 17 Weeks | not_compliant | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 950V | 950V | 30W Tc | TO-220AB | 3A | 7Ohm | 97 mJ | N-Channel | 470pF @ 25V | 7 Ω @ 1A, 10V | 5V @ 250μA | 7.9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| R6011KNX | ROHM Semiconductor | $1.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | TO-220-3 Full Pack | 3 | 18 Weeks | No SVHC | 3 | EAR99 | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 11A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 5V | 53W Tc | TO-220AB | 210 mJ | N-Channel | 740pF @ 25V | 390m Ω @ 3.8A, 10V | 5V @ 1mA | 11A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDP15N40 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-fdp15n40-datasheets-2420.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 4 Weeks | 1.8g | No SVHC | 300MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 170W | 1 | FET General Purpose Power | 26 ns | 55ns | 40 ns | 72 ns | 15A | 30V | SILICON | SWITCHING | 3V | 170W Tc | TO-220AB | 60A | 400V | N-Channel | 1750pF @ 25V | 3 V | 300m Ω @ 7.5A, 10V | 5V @ 250μA | 15A Tc | 36nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IRFI9520GPBF | Vishay Siliconix | $7.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi9520gpbf-datasheets-2429.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 37W | 1 | TO-220-3 | 390pF | 2.5kV | 9.6 ns | 29ns | 25 ns | 21 ns | 5.2A | 20V | 100V | -4V | 37W Tc | 600mOhm | -100V | P-Channel | 390pF @ 25V | -4 V | 600mOhm @ 3.1A, 10V | 4V @ 250μA | 5.2A Tc | 18nC @ 10V | 600 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| DMN90H2D2HCTI | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn90h2d2hcti-datasheets-2434.pdf | TO-220-3 Full Pack, Isolated Tab | 17 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 900V | 40W Tc | N-Channel | 1487pF @ 25V | 2.2 Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 20.3nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP12N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp12n60m2-datasheets-2437.pdf | TO-220-3 | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP12 | NOT SPECIFIED | 9A | 600V | 85W Tc | N-Channel | 538pF @ 100V | 450m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 16nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF32N20C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp32n20c-datasheets-5296.pdf | 200V | 28A | TO-220-3 Full Pack | Lead Free | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 50W | 1 | FET General Purpose Power | 25 ns | 270ns | 210 ns | 245 ns | 28A | 30V | SILICON | ISOLATED | SWITCHING | 50W Tc | TO-220AB | 0.082Ohm | 955 mJ | 200V | N-Channel | 2220pF @ 25V | 82m Ω @ 14A, 10V | 4V @ 250μA | 28A Tc | 110nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STP5N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf5n95k5-datasheets-2982.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 17 Weeks | 329.988449mg | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP5N | Single | 25W | 1 | 12 ns | 16ns | 25 ns | 32 ns | 3.5A | 30V | SILICON | DRAIN | SWITCHING | 950V | 950V | 70W Tc | TO-220AB | 70 mJ | N-Channel | 220pF @ 100V | 2.5 Ω @ 1.5A, 10V | 5V @ 100μA | 3.5A Tc | 12.5nC @ 10V | 10V | |||||||||||||||||||||||||||||||||||||||||
| IPP60R280P6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r280p6xksa1-datasheets-2450.pdf | TO-220-3 | Lead Free | 18 Weeks | 6.000006g | 3 | Halogen Free | 1 | 104W | 1 | PG-TO220-3 | 950pF | 12 ns | 6ns | 36 ns | 13.8A | 20V | 600V | 600V | 104W Tc | 252mOhm | 600V | N-Channel | 950pF @ 100V | 280mOhm @ 6.5A, 10V | 3.5V @ 430μA | 13.8A Tc | 43nC @ 10V | 280 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| R8010ANX | ROHM Semiconductor | $2.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-220-3 Full Pack | Lead Free | 3 | 10 Weeks | not_compliant | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 40W Tc | TO-220AB | 40A | 0.56Ohm | 6.63 mJ | N-Channel | 1750pF @ 25V | 560m Ω @ 5A, 10V | 5V @ 1mA | 10A Tc | 62nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| R6009ENX | ROHM Semiconductor | $2.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | No SVHC | 3 | not_compliant | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 9A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 4V | 40W Tc | TO-220AB | 9A | 18A | N-Channel | 430pF @ 25V | 535m Ω @ 2.8A, 10V | 4V @ 1mA | 9A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| STP12NM50 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp12nm50fp-datasheets-1207.pdf | 500V | 12A | TO-220-3 | 10.4mm | 19.68mm | 4.6mm | Lead Free | 3 | 16 Weeks | 4.535924g | No SVHC | 350mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | STP12 | 3 | 1 | Single | 160W | 1 | FET General Purpose Power | 150°C | 20 ns | 10ns | 12A | 30V | SILICON | SWITCHING | 4V | 160W Tc | TO-220AB | 48A | 400 mJ | 500V | N-Channel | 1000pF @ 25V | 350m Ω @ 6A, 10V | 5V @ 50μA | 12A Tc | 39nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IPA80R1K0CEXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-ipa80r1k0cexksa2-datasheets-2498.pdf | TO-220-3 Full Pack | 19.6mm | Lead Free | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 32W | 1 | 150°C | R-PSFM-T3 | 25 ns | 72 ns | 5.7A | 20V | 800V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 32W Tc | TO-220AB | 0.95Ohm | 230 mJ | 800V | N-Channel | 785pF @ 100V | 950m Ω @ 3.6A, 10V | 3.9V @ 250μA | 5.7A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| STH275N8F7-2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F7 | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sth275n8f76ag-datasheets-3023.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STH275 | NOT SPECIFIED | FET General Purpose Power | 180A | Single | 80V | 315W Tc | N-Channel | 13600pF @ 50V | 2.1m Ω @ 90A, 10V | 4.5V @ 250μA | 180A Tc | 193nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHU4N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihu4n80aege3-datasheets-1544.pdf | TO-251-3 Long Leads, IPak, TO-251AB | 8.5mm | 18 Weeks | 1 | 69W | 150°C | IPAK (TO-251) | 12 ns | 26 ns | 4.3A | 30V | 800V | 69W Tc | 1.1Ohm | 800V | N-Channel | 622pF @ 100V | 1.27Ohm @ 2A, 10V | 4V @ 250μA | 4.3A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R5007FNX | ROHM Semiconductor | $1.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-220-3 Full Pack | 3 | 10 Weeks | not_compliant | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 7A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 40W Tc | TO-220AB | 7A | 28A | 3.2 mJ | N-Channel | 450pF @ 25V | 1.3 Ω @ 3.5A, 10V | 4V @ 1mA | 7A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TK58A06N1,S4X | Toshiba Semiconductor and Storage | $1.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | EAR99 | No | 1 | Single | FET General Purpose Power | 33 ns | 11ns | 17 ns | 56 ns | 58A | 20V | 35W Tc | 60V | N-Channel | 3400pF @ 30V | 5.4m Ω @ 29A, 10V | 4V @ 500μA | 58A Tc | 46nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP4NK50ZD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp4nk50zd-datasheets-2282.pdf | 500V | 3A | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STP4N | 3 | Single | 45W | 1 | FET General Purpose Power | 9.5 ns | 15.5ns | 22 ns | 23 ns | 3A | 30V | SILICON | SWITCHING | 45W Tc | TO-220AB | 3A | 500V | N-Channel | 310pF @ 25V | 2.7 Ω @ 1.5A, 10V | 4.5V @ 50μA | 3A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IPP80R900P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp80r900p7xksa1-datasheets-2288.pdf | TO-220-3 | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 45W Tc | TO-220AB | 14A | 0.9Ohm | 13 mJ | N-Channel | 350pF @ 500V | 900m Ω @ 2.2A, 10V | 3.5V @ 110μA | 6A Tc | 15nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STF13N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stfi13n65m2-datasheets-5496.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | 3 | 16 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF13 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 11 ns | 38 ns | 10A | 25V | SILICON | ISOLATED | SWITCHING | 650V | 650V | 25W Tc | TO-220AB | 40A | N-Channel | 590pF @ 100V | 430m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 17nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||
| FDD3670 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd3670-datasheets-2104.pdf | 100V | 34A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 32MOhm | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 83W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 10ns | 25 ns | 56 ns | 34A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 3.8W Ta 83W Tc | 100V | N-Channel | 2490pF @ 50V | 32m Ω @ 7.3A, 10V | 4V @ 250μA | 34A Ta | 80nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
| TSM10NC60CF C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm10nc60cfc0g-datasheets-2308.pdf | TO-220-3 Full Pack | 3 | 20 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 45W Tc | TO-220AB | 10A | 30A | 0.75Ohm | 422.5 mJ | N-Channel | 1652pF @ 50V | 750m Ω @ 2.5A, 10V | 4.5V @ 250μA | 10A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9M19-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9m1960ex-datasheets-1521.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | SINGLE | GULL WING | 8 | 1 | R-PSSO-G4 | 38A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 62W Tc | 152A | 0.019Ohm | 30 mJ | N-Channel | 1814pF @ 25V | 17m Ω @ 10A, 10V | 2.1V @ 1mA | 38A Tc | 13.8nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STL225N6F7AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F7 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl225n6f7ag-datasheets-2137.pdf | 8-PowerVDFN | 5 | ACTIVE (Last Updated: 8 months ago) | YES | DUAL | FLAT | NOT SPECIFIED | STL225 | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 188W Tc | 120A | 480A | 0.0014Ohm | N-Channel | 6500pF @ 25V | 1.4m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 98nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z20PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf9z20pbf-datasheets-2328.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 12 Weeks | 6.000006g | Unknown | 280mOhm | 3 | No | 1 | Single | 40W | 1 | TO-220AB | 480pF | 8.2 ns | 57ns | 25 ns | 12 ns | 9.7A | 20V | 50V | -4V | 40W Tc | 280mOhm | P-Channel | 480pF @ 25V | -4 V | 280mOhm @ 5.6A, 10V | 4V @ 250μA | 9.7A Tc | 26nC @ 10V | 280 mΩ | 10V | ±20V |
