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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| APT5010B2FLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5010b2fllg-datasheets-2852.pdf | 500V | 46A | TO-247-3 Variant | Lead Free | 3 | 26 Weeks | 3 | IN PRODUCTION (Last Updated: 4 weeks ago) | yes | EAR99 | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 520W | 1 | 11 ns | 15ns | 3 ns | 25 ns | 46A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 520W Tc | N-Channel | 4360pF @ 25V | 100m Ω @ 23A, 10V | 5V @ 2.5mA | 46A Tc | 95nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| STW45N60DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM6 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw45n60dm6-datasheets-2855.pdf | TO-247-3 | 16 Weeks | ACTIVE (Last Updated: 7 months ago) | NOT SPECIFIED | STW45N | NOT SPECIFIED | 600V | 210W Tc | N-Channel | 1920pF @ 100V | 99m Ω @ 15A, 10V | 4.75V @ 250μA | 30A Tc | 44nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHW61N65EF-GE3 | Vishay Siliconix | $11.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihw61n65efge3-datasheets-2858.pdf | TO-247-3 | 17 Weeks | 650V | 520W Tc | N-Channel | 7407pF @ 100V | 47m Ω @ 30.5A, 10V | 4V @ 250μA | 64A Tc | 371nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOSS21311C | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-236-3, SC-59, SOT-23-3 | 18 Weeks | 30V | 1.3W Ta | P-Channel | 720pF @ 15V | 45m Ω @ 4.3A, 10V | 2.2V @ 250μA | 4.3A Ta | 23nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF57N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb57n65m5-datasheets-5392.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 17 Weeks | 63mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STF57N | Single | 40W | 1 | 73 ns | 15ns | 19 ns | 12 ns | 42A | 25V | SILICON | ISOLATED | SWITCHING | 40W Tc | TO-220AB | 960 mJ | 650V | N-Channel | 4200pF @ 100V | 63m Ω @ 21A, 10V | 5V @ 250μA | 42A Tc | 98nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| APT51F50J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt51f50j-datasheets-2815.pdf | SOT-227-4, miniBLOC | 4 | 23 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | UL RECOGNIZED, AVALANCHE RATED | No | UPPER | UNSPECIFIED | 4 | 480W | 1 | 45 ns | 55ns | 39 ns | 120 ns | 51A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 480W Tc | 230A | 0.075Ohm | N-Channel | 11600pF @ 25V | 75m Ω @ 37A, 10V | 5V @ 2.5mA | 51A Tc | 290nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| STO47N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sto47n60m6-datasheets-2467.pdf | 8-PowerSFN | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 255W Tc | N-Channel | 2340pF @ 100V | 80m Ω @ 18A, 10V | 4.75V @ 250μA | 36A Tc | 52.2nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT18M80B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt18m80b-datasheets-2819.pdf | 800V | 18A | TO-247-3 | Lead Free | 3 | 8 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 500W | 1 | R-PSFM-T3 | 21 ns | 31ns | 27 ns | 95 ns | 19A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500W Tc | 70A | 0.53Ohm | 795 mJ | N-Channel | 3760pF @ 25V | 530m Ω @ 9A, 10V | 5V @ 1mA | 19A Tc | 120nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| APT77N60BC6 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt77n60bc6-datasheets-2822.pdf | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | 3 | 24 Weeks | 38.000013g | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 481W | 1 | FET General Purpose Power | R-PSFM-T3 | 18 ns | 27ns | 8 ns | 110 ns | 77A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 481W Tc | 272A | 600V | N-Channel | 13600pF @ 25V | 41m Ω @ 44.4A, 10V | 3.6V @ 2.96mA | 77A Tc | 260nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIHA17N80E-E3 | Vishay Siliconix | $4.62 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha17n80ee3-datasheets-2770.pdf | TO-220-3 Full Pack | 18.1mm | 18 Weeks | 1 | 35W | 150°C | TO-220 Full Pack | 22 ns | 71 ns | 15A | 30V | 800V | 35W Tc | 250mOhm | 800V | N-Channel | 2408pF @ 100V | 290mOhm @ 8.5A, 10V | 4V @ 250μA | 15A Tc | 122nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA12N60E-E3 | Vishay Siliconix | $1.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha12n60ee3-datasheets-2772.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 6.000006g | Unknown | 3 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 14 ns | 19ns | 19 ns | 35 ns | 12A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | 4V | 33W Tc | TO-220AB | 27A | N-Channel | 937pF @ 100V | 380m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 58nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXFH120N25X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft120n25x3hv-datasheets-4945.pdf | TO-247-3 | 19 Weeks | 250V | 520W Tc | N-Channel | 7870pF @ 25V | 12m Ω @ 60A, 10V | 4.5V @ 4mA | 120A Tc | 122nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTR48P20P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtr48p20p-datasheets-2780.pdf | ISOPLUS247™ | Lead Free | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSIP-T3 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 190W Tc | 144A | 0.093Ohm | 2500 mJ | P-Channel | 5400pF @ 25V | 93m Ω @ 24A, 10V | 4.5V @ 250μA | 30A Tc | 103nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| TK31J60W,S1VQ | Toshiba Semiconductor and Storage | $3.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-3P-3, SC-65-3 | 3nF | 16 Weeks | Single | 230W | TO-3P(N) | 3nF | 30.8A | 600V | 230W Tc | 88mOhm | 600V | N-Channel | 3000pF @ 300V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 30.8A Ta | 86nC @ 10V | Super Junction | 88 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH76N60N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fch76n60n-datasheets-2786.pdf | TO-247-3 | 15.95mm | 21mm | 5.03mm | 3 | 12 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 543W | 1 | FET General Purpose Power | 34 ns | 24ns | 32 ns | 235 ns | 76A | 30V | SILICON | SWITCHING | 2V | 543W Tc | 228A | 8022 mJ | 600V | N-Channel | 12385pF @ 100V | 36m Ω @ 38A, 10V | 4V @ 250μA | 76A Tc | 285nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| APT10021JLL | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt10021jll-datasheets-2794.pdf | 1kV | 37A | SOT-227-4, miniBLOC | Lead Free | 4 | 19 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | 694W | 1 | FET General Purpose Power | 29 ns | 22ns | 20 ns | 80 ns | 37A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 694W Tc | 3600 mJ | N-Channel | 9750pF @ 25V | 210m Ω @ 18.5A, 10V | 5V @ 5mA | 37A Tc | 395nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| STW12N170K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw12n170k5-datasheets-2797.pdf | TO-247-3 | 17 Weeks | NOT SPECIFIED | NOT SPECIFIED | 1700V | 250W Tc | N-Channel | 1380pF @ 100V | 2.9 Ω @ 2.5A, 10V | 5V @ 100μA | 5A Tc | 37nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STU3N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std3n80k5-datasheets-8152.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.2mm | 2.4mm | Lead Free | 3 | 17 Weeks | 3.949996g | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | STU3N | 1 | Single | 1 | 8.5 ns | 7.5ns | 25 ns | 20.5 ns | 2.5A | 30V | SILICON | DRAIN | SWITCHING | 800V | 800V | 60W Tc | 65 mJ | N-Channel | 130pF @ 100V | 3.5 Ω @ 1A, 10V | 5V @ 100μA | 2.5A Tc | 9.5nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||
| SIHA25N60EFL-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha25n60efle3-datasheets-2802.pdf | TO-220-3 Full Pack | 14 Weeks | 600V | 39W Tc | N-Channel | 2274pF @ 100V | 146m Ω @ 12.5A, 10V | 5V @ 250μA | 25A Tc | 75nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH14N85X | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfp14n85x-datasheets-4389.pdf | TO-247-3 | 19 Weeks | yes | 850V | 460W Tc | N-Channel | 1043pF @ 25V | 550m Ω @ 500mA, 10V | 5.5V @ 1mA | 14A Tc | 30nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOK27S60L | Alpha & Omega Semiconductor Inc. | $27.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-247-3 | 16 Weeks | 27A | 600V | 357W Tc | N-Channel | 1294pF @ 100V | 160m Ω @ 13.5A, 10V | 4V @ 250μA | 27A Tc | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP5N100PM | IXYS | $7.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfp5n100pm-datasheets-2755.pdf | TO-220-3 Full Pack, Isolated Tab | 26 Weeks | 2.3A | 1000V | 42W Tc | N-Channel | 1830pF @ 25V | 2.8 Ω @ 2.5A, 10V | 6V @ 250μA | 2.3A Tc | 33.4nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB22N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb22n65ege3-datasheets-2757.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | Unknown | 3 | yes | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 227W | 1 | R-PSSO-G2 | 33ns | 38 ns | 73 ns | 22A | 4V | SILICON | SWITCHING | 227W Tc | 56A | 650V | N-Channel | 2415pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| STF31N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfi31n65m5-datasheets-6407.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 17 Weeks | 148mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STF31N | Single | 30W | 1 | FET General Purpose Powers | 46 ns | 46 ns | 22A | 25V | 30W Tc | 650V | N-Channel | 816pF @ 100V | 148m Ω @ 11A, 10V | 5V @ 250μA | 22A Tc | 45nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STP5NK52ZD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb5nk52zd1-datasheets-4264.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | 3 | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | STP5N | 3 | Single | 70W | 1 | FET General Purpose Power | 11.4 ns | 13.6ns | 15 ns | 23.1 ns | 4.4A | 30V | SILICON | SWITCHING | 25W Tc | TO-220AB | 520V | N-Channel | 529pF @ 25V | 1.5 Ω @ 2.2A, 10V | 4.5V @ 50μA | 4.4A Tc | 16.9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRFR9210PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfu9210pbf-datasheets-5149.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3Ohm | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 170pF | 8 ns | 12ns | 13 ns | 11 ns | 1.9A | 20V | 200V | -4V | 2.5W Ta 25W Tc | 220 ns | 3Ohm | -200V | P-Channel | 170pF @ 25V | 3Ohm @ 1.1A, 10V | 4V @ 250μA | 1.9A Tc | 8.9nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FDP090N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdp090n10-datasheets-2709.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | 3 | 9 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | Single | 208W | 1 | FET General Purpose Power | 107 ns | 322ns | 149 ns | 166 ns | 75A | 20V | SILICON | SWITCHING | 208W Tc | TO-220AB | 0.009Ohm | 100V | N-Channel | 8225pF @ 25V | 3.5 V | 9m Ω @ 75A, 10V | 4.5V @ 250μA | 75A Tc | 116nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| TK25A60X,S5X | Toshiba Semiconductor and Storage | $2.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 2.4nF | 25A | 600V | 45W Tc | N-Channel | 2400pF @ 300V | 125mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 25A Ta | 40nC @ 10V | 125 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH50P10 | IXYS | $10.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixth50p10-datasheets-2723.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | Other Transistors | 39ns | 38 ns | 86 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 100V | 300W Tc | TO-247AD | 200A | 0.055Ohm | -100V | P-Channel | 4350pF @ 25V | 55m Ω @ 25A, 10V | 5V @ 250μA | 50A Tc | 140nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTA8N65X2 | IXYS | $2.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixta8n65x2-datasheets-2725.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 8A | 650V | 150W Tc | N-Channel | 800pF @ 25V | 500m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 12nC @ 10V | 10V | ±30V |
