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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDP090N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdp090n10-datasheets-2709.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | 3 | 9 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | Single | 208W | 1 | FET General Purpose Power | 107 ns | 322ns | 149 ns | 166 ns | 75A | 20V | SILICON | SWITCHING | 208W Tc | TO-220AB | 0.009Ohm | 100V | N-Channel | 8225pF @ 25V | 3.5 V | 9m Ω @ 75A, 10V | 4.5V @ 250μA | 75A Tc | 116nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| TK25A60X,S5X | Toshiba Semiconductor and Storage | $2.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 2.4nF | 25A | 600V | 45W Tc | N-Channel | 2400pF @ 300V | 125mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 25A Ta | 40nC @ 10V | 125 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH50P10 | IXYS | $10.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixth50p10-datasheets-2723.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | Other Transistors | 39ns | 38 ns | 86 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 100V | 300W Tc | TO-247AD | 200A | 0.055Ohm | -100V | P-Channel | 4350pF @ 25V | 55m Ω @ 25A, 10V | 5V @ 250μA | 50A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTA8N65X2 | IXYS | $2.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixta8n65x2-datasheets-2725.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 8A | 650V | 150W Tc | N-Channel | 800pF @ 25V | 500m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPC50PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfpc50pbf-datasheets-2727.pdf | 600V | 11A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 12 Weeks | 38.000013g | Unknown | 600mOhm | 3 | 1 | Single | 180W | 1 | TO-247-3 | 2.7nF | 18 ns | 37ns | 36 ns | 88 ns | 11A | 20V | 600V | 4V | 180W Tc | 830 ns | 600mOhm | 600V | N-Channel | 2700pF @ 25V | 600mOhm @ 6A, 10V | 4V @ 250μA | 11A Tc | 140nC @ 10V | 600 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| DMT6010SCT | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmt6010sct-datasheets-2631.pdf | TO-220-3 | 24 Weeks | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 98A | 60V | 2.3W Ta 104W Tc | N-Channel | 1940pF @ 30V | 7.2m Ω @ 20A, 10V | 4V @ 250μA | 98A Tc | 36.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQAF16N50 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqaf16n50-datasheets-2640.pdf | 500V | 11.3A | TO-3P-3 Full Pack | 15.7mm | 16.7mm | 5.7mm | Lead Free | 3 | 4 Weeks | 6.962g | 3 | ACTIVE (Last Updated: 13 hours ago) | yes | EAR99 | Tin | No | e3 | Single | 110W | 1 | FET General Purpose Power | 45 ns | 180ns | 100 ns | 130 ns | 11.3A | 30V | SILICON | ISOLATED | SWITCHING | 110W Tc | 45.2A | 980 mJ | 500V | N-Channel | 3000pF @ 25V | 320m Ω @ 5.65A, 10V | 5V @ 250μA | 11.3A Tc | 75nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| STP38N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw38n65m5-datasheets-2380.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 17 Weeks | 95MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STP38N | Single | 190W | 1 | FET General Purpose Powers | 66 ns | 9ns | 9 ns | 66 ns | 30A | 25V | SILICON | ISOLATED | SWITCHING | 190W Tc | TO-220AB | 660 mJ | 650V | N-Channel | 3000pF @ 100V | 95m Ω @ 15A, 10V | 5V @ 250μA | 30A Tc | 71nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHG11N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihg11n80ege3-datasheets-2651.pdf | TO-247-3 | 18 Weeks | 800V | 179W Tc | N-Channel | 1670pF @ 100V | 440m Ω @ 5.5A, 10V | 4V @ 250μA | 12A Tc | 88nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB47N60DM6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | AVALANCE RATED | compliant | AEC-Q101 | NO | SINGLE | GULL WING | STB47N | 150°C | -55°C | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 250W | 600V | METAL-OXIDE SEMICONDUCTOR | 36A | 137A | 0.08Ohm | 700 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6024KNZ1C9 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/rohm-r6024knz1c9-datasheets-6814.pdf | TO-247-3 | 3 | 13 Weeks | No SVHC | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 5V | 245W Tc | 72A | 0.165Ohm | 497 mJ | N-Channel | 2000pF @ 25V | 165m Ω @ 11.3A, 10V | 5V @ 1mA | 24A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB12N50E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-sihb12n50ege3-datasheets-2665.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | 1.437803g | Unknown | 3 | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | R-PSSO-G2 | 10.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 4V | 114W Tc | 500V | N-Channel | 886pF @ 100V | 380m Ω @ 6A, 10V | 4V @ 250μA | 10.5A Tc | 50nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI045N10N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipi045n10n3gxksa1-datasheets-2674.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 214W | 1 | Not Qualified | R-PSIP-T3 | 27 ns | 59ns | 14 ns | 48 ns | 100A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 214W Tc | 400A | 0.0045Ohm | 340 mJ | N-Channel | 8410pF @ 50V | 4.5m Ω @ 100A, 10V | 3.5V @ 150μA | 100A Tc | 117nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRLSL4030PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irls4030trlpbf-datasheets-9912.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.652mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 4.3Ohm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 370W | 1 | FET General Purpose Power | 74 ns | 330ns | 170 ns | 110 ns | 180A | 16V | SILICON | SWITCHING | 370W Tc | 100V | N-Channel | 11360pF @ 50V | 2.5 V | 4.3m Ω @ 110A, 10V | 2.5V @ 250μA | 180A Tc | 130nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| FDMT80040DC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdmt80040dc-datasheets-2507.pdf | 8-PowerVDFN | 20 Weeks | 248.52072mg | ACTIVE (Last Updated: 5 days ago) | yes | not_compliant | Single | 40V | 156W Tc | N-Channel | 26110pF @ 20V | 0.56m Ω @ 64A, 10V | 4V @ 250μA | 420A Tc | 338nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG20N50E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihg20n50ege3-datasheets-2609.pdf | TO-247-3 | 3 | 18 Weeks | Unknown | 160mOhm | 3 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 17 ns | 27ns | 25 ns | 48 ns | 19A | 20V | SILICON | DRAIN | SWITCHING | 4V | 179W Tc | TO-247AC | 42A | 204 mJ | 500V | N-Channel | 1640pF @ 100V | 184m Ω @ 10A, 10V | 4V @ 250μA | 19A Tc | 92nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STF33N60DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf33n60dm6-datasheets-2617.pdf | TO-220-3 Full Pack | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 35W Tc | N-Channel | 1500pF @ 100V | 128m Ω @ 12.5A, 10V | 4.75V @ 250μA | 25A Tc | 35nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB33N60DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb33n60dm6-datasheets-2412.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 190W Tc | N-Channel | 1500pF @ 100V | 128m Ω @ 12.5A, 10V | 4.75V @ 250μA | 25A Tc | 35nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK14E65W,S1X | Toshiba Semiconductor and Storage | $9.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 16 Weeks | 6.000006g | 3 | No | 1 | Single | 60 ns | 20ns | 7 ns | 110 ns | 13.7A | 30V | 130W Tc | 650V | N-Channel | 1300pF @ 300V | 250m Ω @ 6.9A, 10V | 3.5V @ 690μA | 13.7A Ta | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW31N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfi31n65m5-datasheets-6407.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 17 Weeks | 148mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STW31N | 150W | 1 | FET General Purpose Powers | 46 ns | 46 ns | 22A | 25V | Single | 150W Tc | 650V | N-Channel | 816pF @ 100V | 148m Ω @ 11A, 10V | 5V @ 250μA | 22A Tc | 45nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ10PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfz10pbf-datasheets-2535.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 200MOhm | 3 | yes | EAR99 | No | 3 | 1 | Single | 43W | 1 | 10 ns | 50ns | 19 ns | 13 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 4V | 43W Tc | TO-220AB | 40A | 47 mJ | N-Channel | 300pF @ 25V | 200m Ω @ 6A, 10V | 4V @ 250μA | 10A Tc | 11nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STH240N10F7-6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F7 | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sth240n10f72-datasheets-1582.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Lead Free | 6 | 13 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA LOW RESISTANCE | SINGLE | GULL WING | NOT SPECIFIED | STH240 | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G6 | 180A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 300W Tc | 720A | 0.0025Ohm | 500 mJ | N-Channel | 11550pF @ 25V | 2.5m Ω @ 60A, 10V | 4.5V @ 250μA | 180A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP12N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihp12n65ege3-datasheets-2547.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | 6.000006g | 3 | No | 1 | Single | 156W | 1 | 16 ns | 19ns | 18 ns | 35 ns | 12A | 20V | SILICON | SWITCHING | 650V | 156W Tc | TO-220AB | 28A | 226 mJ | 700V | N-Channel | 1224pF @ 100V | 380m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 70nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP047N08 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdp047n08-datasheets-2553.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 5 Weeks | 1.8g | No SVHC | 4.7MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 268W | 1 | FET General Purpose Power | 100 ns | 147ns | 114 ns | 220 ns | 164A | 20V | SILICON | SWITCHING | 268W Tc | TO-220AB | 656A | 670 mJ | 75V | N-Channel | 9415pF @ 25V | 3.5 V | 4.7m Ω @ 80A, 10V | 4.5V @ 250μA | 164A Tc | 152nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SIHA15N60E-E3 | Vishay Siliconix | $10.65 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha15n60ee3-datasheets-2564.pdf | TO-220-3 Full Pack | Lead Free | 3 | 14 Weeks | 6.000006g | Unknown | 3 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 17 ns | 51ns | 33 ns | 35 ns | 15A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 4V | 34W Tc | TO-220AB | 0.28Ohm | 650V | N-Channel | 1350pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 76nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STF20N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stfi20n65m5-datasheets-6464.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 17 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STF20 | Single | 130W | FET General Purpose Powers | 43 ns | 7.5ns | 7.5 ns | 11.5 ns | 18A | 25V | 30W Tc | 650V | N-Channel | 1345pF @ 100V | 190m Ω @ 9A, 10V | 5V @ 250μA | 18A Tc | 45nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP33N60DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp33n60dm6-datasheets-2577.pdf | TO-220-3 | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 190W Tc | N-Channel | 1500pF @ 100V | 128m Ω @ 12.5A, 10V | 4.75V @ 250μA | 25A Tc | 35nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP6N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp6n80ege3-datasheets-2580.pdf | TO-220-3 | 18 Weeks | TO-220AB | 800V | 78W Tc | N-Channel | 827pF @ 100V | 940mOhm @ 3A, 10V | 4V @ 250μA | 5.4A Tc | 44nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP70040E-GE3 | Vishay Siliconix | $3.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup70040ege3-datasheets-2588.pdf | TO-220-3 | Lead Free | 3 | 14 Weeks | Unknown | 3 | EAR99 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 4V | 375W Tc | TO-220AB | 480A | 0.004Ohm | 266 mJ | N-Channel | 5100pF @ 50V | 4m Ω @ 20A, 10V | 4V @ 250μA | 120A Tc | 120nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020ENZ1C9 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-247-3 | 3 | 10 Weeks | No SVHC | 3 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 4V | 120W Tc | 80A | N-Channel | 1400pF @ 25V | 196m Ω @ 9.5A, 10V | 4V @ 1mA | 20A Tc | 60nC @ 10V | 10V | ±20V |
