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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TK100A06N1,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220SIS | 10.5nF | 110 ns | 67ns | 64 ns | 180 ns | 100A | 20V | 60V | 45W Tc | 2.2mOhm | 60V | N-Channel | 10500pF @ 30V | 2.7mOhm @ 50A, 10V | 4V @ 1mA | 100A Tc | 140nC @ 10V | 2.7 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK14N65W,S1F | Toshiba Semiconductor and Storage | $4.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-247-3 | 16 Weeks | 38.000013g | 3 | No | 1 | Single | TO-247 | 1.3nF | 60 ns | 20ns | 7 ns | 110 ns | 13.7A | 30V | 650V | 130W Tc | 220mOhm | 650V | N-Channel | 1300pF @ 300V | 250mOhm @ 6.9A, 10V | 3.5V @ 690μA | 13.7A Ta | 35nC @ 10V | 250 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB41N15DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irfb41n15dpbf-datasheets-1190.pdf | 150V | 41A | TO-220-3 | 10.5156mm | 8.763mm | 4.69mm | Contains Lead, Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | Single | 200W | 1 | FET General Purpose Power | 16 ns | 63ns | 14 ns | 25 ns | 41A | 30V | 150V | SILICON | DRAIN | SWITCHING | 5.5V | 200W Tc | TO-220AB | 260 ns | 0.045Ohm | 470 mJ | 150V | N-Channel | 2520pF @ 25V | 5.5 V | 45m Ω @ 25A, 10V | 5.5V @ 250μA | 41A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| HUF75545P3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-huf75545s3st-datasheets-0987.pdf | 80V | 75A | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | Lead Free | 3 | 9 Weeks | 4.535924g | No SVHC | 10mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | 75A | e3 | Tin (Sn) | 80V | Single | 270W | 1 | FET General Purpose Power | 14 ns | 125ns | 90 ns | 40 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 4V | 270W Tc | TO-220AB | 80V | N-Channel | 3750pF @ 25V | 10m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 235nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDPF14N30 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf14n30-datasheets-1208.pdf | TO-220-3 Full Pack | Lead Free | 3 | 4 Weeks | 2.27g | No SVHC | 290MOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 35W | 1 | FET General Purpose Power | Not Qualified | 20 ns | 105ns | 75 ns | 30 ns | 14A | 30V | 300V | SILICON | ISOLATED | SWITCHING | 35W Tc | TO-220AB | 56A | 300V | N-Channel | 1060pF @ 25V | 5 V | 290m Ω @ 7A, 10V | 5V @ 250μA | 14A Tc | 25nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| FDPF20N50FT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdpf20n50ft-datasheets-1214.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 9 Weeks | 2.27g | 260mOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 38.5W | 1 | FET General Purpose Power | Not Qualified | 45 ns | 120ns | 60 ns | 100 ns | 20A | 30V | SILICON | ISOLATED | SWITCHING | 38.5W Tc | TO-220AB | 80A | 1110 mJ | 500V | N-Channel | 3390pF @ 25V | 260m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 65nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| AOTF6N90 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 3 | 50W | 1 | FET General Purpose Power | 6A | 30V | Single | 900V | 50W Tc | 6A | N-Channel | 1450pF @ 25V | 2.2 Ω @ 3A, 10V | 4.5V @ 250μA | 6A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10E60W,S1VX | Toshiba Semiconductor and Storage | $0.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-220-3 | 16 Weeks | Single | 100W | 22ns | 5.5 ns | 75 ns | 9.7A | 30V | 100W Tc | 600V | N-Channel | 700pF @ 300V | 380m Ω @ 4.9A, 10V | 3.7V @ 500μA | 9.7A Ta | 20nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK72A12N1,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | EAR99 | No | 1 | Single | FET General Purpose Power | 64 ns | 33ns | 37 ns | 120 ns | 72A | 20V | 45W Tc | 120V | N-Channel | 8100pF @ 60V | 4.5m Ω @ 36A, 10V | 4V @ 1mA | 72A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB13N50APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfb13n50apbf-datasheets-1142.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | No SVHC | 450mOhm | 3 | No | 1 | Single | 250W | 1 | TO-220AB | 1.91nF | 15 ns | 39ns | 31 ns | 39 ns | 14A | 30V | 500V | 500V | 4V | 250W Tc | 450mOhm | 500V | N-Channel | 1910pF @ 25V | 4 V | 450mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 81nC @ 10V | 450 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPA80R360P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipa80r360p7xksa1-datasheets-1150.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 30W Tc | TO-220AB | 34A | 0.36Ohm | 34 mJ | N-Channel | 930pF @ 500V | 360m Ω @ 5.6A, 10V | 3.5V @ 280μA | 13A Tc | 30nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL530NSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl530nstrlpbf-datasheets-7930.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.8W Ta 79W Tc | 17A | 60A | 0.12Ohm | 150 mJ | N-Channel | 800pF @ 25V | 100m Ω @ 9A, 10V | 2V @ 250μA | 17A Tc | 34nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW8N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw8n90k5-datasheets-1162.pdf | TO-247-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STW8N | 900V | 130W Tc | 600mOhm | N-Channel | 5V @ 100μA | 8A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP037N06L3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb034n06l3gatma1-datasheets-8225.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 167W | 1 | Not Qualified | 25 ns | 13 ns | 90A | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 167W Tc | TO-220AB | 165 mJ | N-Channel | 13000pF @ 30V | 3.7m Ω @ 90A, 10V | 2.2V @ 93μA | 90A Tc | 79nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TK5A60W,S4VX | Toshiba Semiconductor and Storage | $2.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 380pF | 16 Weeks | Single | 30W | 18ns | 7 ns | 50 ns | 5.4A | 30V | 30W Tc | 600V | N-Channel | 380pF @ 300V | 900m Ω @ 2.7A, 10V | 3.7V @ 270μA | 5.4A Ta | 10.5nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM10250E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum10250ege3-datasheets-1082.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 250V | 375W Tc | N-Channel | 3002pF @ 125V | 31m Ω @ 30A, 10V | 4V @ 250μA | 63.5A Tc | 88nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK8A65D(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | TO-220-3 Full Pack | 16 Weeks | 3 | No | 45W | 1 | TO-220SIS | 1.35nF | 22ns | 15 ns | 8A | 30V | 650V | 45W Tc | N-Channel | 1350pF @ 25V | 840mOhm @ 4A, 10V | 4V @ 1mA | 8A Ta | 25nC @ 10V | 840 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC014N03MSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-bsc014n03msgatma1-datasheets-0814.pdf | 8-PowerTDFN | Contains Lead | 5 | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.5W | 1 | Not Qualified | R-PDSO-F5 | 32 ns | 16ns | 43 ns | 30A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 139W Tc | 400A | 340 mJ | N-Channel | 13000pF @ 15V | 1.4m Ω @ 30A, 10V | 2V @ 250μA | 30A Ta 100A Tc | 173nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRLR014TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irlu014pbf-datasheets-7963.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | D-Pak | 400pF | 9.3 ns | 110ns | 26 ns | 17 ns | 7.7A | 10V | 60V | 2.5W Ta 25W Tc | 200mOhm | 60V | N-Channel | 400pF @ 25V | 200mOhm @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 8.4nC @ 5V | 200 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7634BDP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7634bdpt1ge3-datasheets-3414.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | 5.4mOhm | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | R-XDSO-C5 | 30 ns | 12ns | 12 ns | 34 ns | 40A | 20V | SILICON | DRAIN | 5W Ta 48W Tc | 22.5A | 70A | 45 mJ | 30V | N-Channel | 3150pF @ 15V | 5.4m Ω @ 15A, 10V | 2.6V @ 250μA | 40A Tc | 68nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SUM80090E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum80090ege3-datasheets-0905.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | Unknown | 3 | EAR99 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 128A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150V | 150V | 5V | 375W Tc | 240A | 0.0105Ohm | 180 mJ | N-Channel | 3425pF @ 75V | 9m Ω @ 30A, 10V | 5V @ 250μA | 128A Tc | 95nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLI3705NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irli3705npbf-datasheets-1118.pdf | 57V | 52A | TO-220-3 Full Pack | 9.8mm | Lead Free | 3 | 12 Weeks | No SVHC | 12mOhm | 3 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT SPECIFIED | Single | NOT SPECIFIED | 47W | 1 | Not Qualified | 2kV | 12 ns | 140ns | 78 ns | 37 ns | 52A | 16V | 55V | SILICON | ISOLATED | SWITCHING | 2V | 58W Tc | TO-220AB | 140 ns | 55V | N-Channel | 3600pF @ 25V | 2 V | 10m Ω @ 28A, 10V | 2V @ 250μA | 52A Tc | 98nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| PSMN1R8-30PL,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn1r830pl127-datasheets-1003.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 1.8MOhm | 3 | No | e3 | Tin (Sn) | NO | 3 | Single | 270W | 1 | 92 ns | 160ns | 70 ns | 135 ns | 100A | 20V | 30V | SILICON | DRAIN | SWITCHING | 270W Tc | TO-220AB | 30V | N-Channel | 10180pF @ 12V | 1.8m Ω @ 25A, 10V | 2.15V @ 1mA | 100A Tc | 170nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50N04_4M5LT4GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50n044m5lge3-datasheets-4555.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 40V | 136W Tc | N-Channel | 5860pF @ 25V | 3.5mOhm @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 130nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON7140 | Alpha & Omega Semiconductor Inc. | $0.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerWDFN | 18 Weeks | 40V | 46W Tc | N-Channel | 3350pF @ 20V | 2.3m Ω @ 20A, 10V | 2.4V @ 250μA | 50A Tc | 60nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RCX120N25 | ROHM Semiconductor | $4.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-220-3 Full Pack | 3 | 16 Weeks | 3 | EAR99 | No | SINGLE | 3 | 40W | 1 | 33 ns | 65ns | 20 ns | 45 ns | 12A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 2.23W Ta 40W Tc | TO-220AB | 48A | 180mOhm | 10.5 mJ | 250V | N-Channel | 12A Ta | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP55N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqp55n10-datasheets-1034.pdf | 100V | 55A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 5 Weeks | 1.8g | 26mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | Single | 155W | 1 | FET General Purpose Power | 25 ns | 250ns | 140 ns | 110 ns | 55A | 25V | SILICON | SWITCHING | 155W Tc | TO-220AB | 220A | 100V | N-Channel | 2730pF @ 25V | 26m Ω @ 27.5A, 10V | 4V @ 250μA | 55A Tc | 98nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||
| SIHLZ34S-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlz34spbf-datasheets-5430.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | D2PAK (TO-263) | 60V | 3.7W Ta 88W Tc | N-Channel | 1600pF @ 25V | 50mOhm @ 18A, 5V | 2V @ 250μA | 30A Tc | 35nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB7537PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs7537trlpbf-datasheets-5735.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 12 Weeks | 6.000006g | No SVHC | 3 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 230W | 1 | FET General Purpose Power | 15 ns | 105ns | 84 ns | 82 ns | 173A | 20V | SILICON | SWITCHING | 3.7V | 230W Tc | TO-220AB | 700A | 554 mJ | 60V | N-Channel | 7020pF @ 25V | 3.3m Ω @ 100A, 10V | 3.7V @ 150μA | 173A Tc | 210nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| AON6458 | Alpha & Omega Semiconductor Inc. | $0.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | Lead Free | 18 Weeks | 8 | 83W | 1 | 14A | 30V | 250V | 2W Ta 83W Tc | N-Channel | 1240pF @ 25V | 170m Ω @ 10A, 10V | 4.5V @ 250μA | 2.2A Ta 14A Tc | 27nC @ 10V | 10V | ±30V |
