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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NVMFS5C430NAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c430naft1g-datasheets-1229.pdf | 8-PowerTDFN, 5 Leads | 16 Weeks | ACTIVE (Last Updated: 6 hours ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.8W Ta 106W Tc | N-Channel | 3300pF @ 25V | 1.7m Ω @ 50A, 10V | 3.5V @ 250μA | 35A Ta 185A Tc | 47nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD320PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irfd320pbf-datasheets-1231.pdf | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Lead Free | 3 | 8 Weeks | Unknown | 4 | yes | EAR99 | AVALANCHE RATED | No | DUAL | 4 | 1W | 1 | FET General Purpose Power | R-PDIP-T3 | 10 ns | 14ns | 14 ns | 30 ns | 490mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1W Ta | 400V | N-Channel | 410pF @ 25V | 4 V | 1.8 Ω @ 210mA, 10V | 4V @ 250μA | 490mA Ta | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPP052N08N5AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipp052n08n5aksa1-datasheets-1235.pdf | TO-220-3 | Contains Lead | 3 | 13 Weeks | 6.000006g | yes | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSFM-T3 | 17 ns | 7ns | 7 ns | 27 ns | 80A | 20V | 80V | SILICON | DRAIN | SWITCHING | 125W Tc | TO-220AB | 320A | 0.0052Ohm | 84 mJ | N-Channel | 3770pF @ 40V | 5.2m Ω @ 80A, 10V | 3.8V @ 66μA | 80A Tc | 53nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIHP18N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp18n50ce3-datasheets-1241.pdf&product=vishaysiliconix-sihp18n50ce3-6849922 | TO-220-3 | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 270mOhm | 3 | yes | No | e3 | Matte Tin (Sn) | SINGLE | 3 | 1 | 223W | 1 | FET General Purpose Powers | 80 ns | 27ns | 44 ns | 32 ns | 18A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 5V | 223W Tc | TO-220AB | 72A | N-Channel | 2942pF @ 25V | 5 V | 270m Ω @ 10A, 10V | 5V @ 250μA | 18A Tc | 76nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| NTMYS3D5N04CTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmys3d5n04ctwg-datasheets-1249.pdf | SOT-1023, 4-LFPAK | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.6W Ta 68W Tc | N-Channel | 1600pF @ 25V | 3.3m Ω @ 50A, 10V | 3.5V @ 60μA | 24A Ta 102A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR214TRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfu214pbf-datasheets-4957.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 14 Weeks | 1.437803g | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 30 | 1 | FET General Purpose Power | R-PSSO-G2 | 7 ns | 7.6ns | 7 ns | 16 ns | 2.2A | 20V | SILICON | DRAIN | SWITCHING | 250V | 250V | 2.5W Ta 25W Tc | TO-252AA | 8.8A | 2Ohm | N-Channel | 140pF @ 25V | 2 Ω @ 1.3A, 10V | 4V @ 250μA | 2.2A Tc | 8.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SUM10250E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum10250ege3-datasheets-1082.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 250V | 375W Tc | N-Channel | 3002pF @ 125V | 31m Ω @ 30A, 10V | 4V @ 250μA | 63.5A Tc | 88nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK8A65D(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | TO-220-3 Full Pack | 16 Weeks | 3 | No | 45W | 1 | TO-220SIS | 1.35nF | 22ns | 15 ns | 8A | 30V | 650V | 45W Tc | N-Channel | 1350pF @ 25V | 840mOhm @ 4A, 10V | 4V @ 1mA | 8A Ta | 25nC @ 10V | 840 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC014N03MSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-bsc014n03msgatma1-datasheets-0814.pdf | 8-PowerTDFN | Contains Lead | 5 | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.5W | 1 | Not Qualified | R-PDSO-F5 | 32 ns | 16ns | 43 ns | 30A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 139W Tc | 400A | 340 mJ | N-Channel | 13000pF @ 15V | 1.4m Ω @ 30A, 10V | 2V @ 250μA | 30A Ta 100A Tc | 173nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRLR014TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irlu014pbf-datasheets-7963.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | D-Pak | 400pF | 9.3 ns | 110ns | 26 ns | 17 ns | 7.7A | 10V | 60V | 2.5W Ta 25W Tc | 200mOhm | 60V | N-Channel | 400pF @ 25V | 200mOhm @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 8.4nC @ 5V | 200 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI7634BDP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7634bdpt1ge3-datasheets-3414.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | 5.4mOhm | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | R-XDSO-C5 | 30 ns | 12ns | 12 ns | 34 ns | 40A | 20V | SILICON | DRAIN | 5W Ta 48W Tc | 22.5A | 70A | 45 mJ | 30V | N-Channel | 3150pF @ 15V | 5.4m Ω @ 15A, 10V | 2.6V @ 250μA | 40A Tc | 68nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SUM80090E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum80090ege3-datasheets-0905.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | Unknown | 3 | EAR99 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 128A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150V | 150V | 5V | 375W Tc | 240A | 0.0105Ohm | 180 mJ | N-Channel | 3425pF @ 75V | 9m Ω @ 30A, 10V | 5V @ 250μA | 128A Tc | 95nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRLI3705NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irli3705npbf-datasheets-1118.pdf | 57V | 52A | TO-220-3 Full Pack | 9.8mm | Lead Free | 3 | 12 Weeks | No SVHC | 12mOhm | 3 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT SPECIFIED | Single | NOT SPECIFIED | 47W | 1 | Not Qualified | 2kV | 12 ns | 140ns | 78 ns | 37 ns | 52A | 16V | 55V | SILICON | ISOLATED | SWITCHING | 2V | 58W Tc | TO-220AB | 140 ns | 55V | N-Channel | 3600pF @ 25V | 2 V | 10m Ω @ 28A, 10V | 2V @ 250μA | 52A Tc | 98nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| AOTF6N90 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 3 | 50W | 1 | FET General Purpose Power | 6A | 30V | Single | 900V | 50W Tc | 6A | N-Channel | 1450pF @ 25V | 2.2 Ω @ 3A, 10V | 4.5V @ 250μA | 6A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10E60W,S1VX | Toshiba Semiconductor and Storage | $0.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-220-3 | 16 Weeks | Single | 100W | 22ns | 5.5 ns | 75 ns | 9.7A | 30V | 100W Tc | 600V | N-Channel | 700pF @ 300V | 380m Ω @ 4.9A, 10V | 3.7V @ 500μA | 9.7A Ta | 20nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK72A12N1,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 3 | EAR99 | No | 1 | Single | FET General Purpose Power | 64 ns | 33ns | 37 ns | 120 ns | 72A | 20V | 45W Tc | 120V | N-Channel | 8100pF @ 60V | 4.5m Ω @ 36A, 10V | 4V @ 1mA | 72A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB13N50APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfb13n50apbf-datasheets-1142.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | No SVHC | 450mOhm | 3 | No | 1 | Single | 250W | 1 | TO-220AB | 1.91nF | 15 ns | 39ns | 31 ns | 39 ns | 14A | 30V | 500V | 500V | 4V | 250W Tc | 450mOhm | 500V | N-Channel | 1910pF @ 25V | 4 V | 450mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 81nC @ 10V | 450 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IPA80R360P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipa80r360p7xksa1-datasheets-1150.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 30W Tc | TO-220AB | 34A | 0.36Ohm | 34 mJ | N-Channel | 930pF @ 500V | 360m Ω @ 5.6A, 10V | 3.5V @ 280μA | 13A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL530NSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl530nstrlpbf-datasheets-7930.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.8W Ta 79W Tc | 17A | 60A | 0.12Ohm | 150 mJ | N-Channel | 800pF @ 25V | 100m Ω @ 9A, 10V | 2V @ 250μA | 17A Tc | 34nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| STW8N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw8n90k5-datasheets-1162.pdf | TO-247-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STW8N | 900V | 130W Tc | 600mOhm | N-Channel | 5V @ 100μA | 8A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP037N06L3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb034n06l3gatma1-datasheets-8225.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 167W | 1 | Not Qualified | 25 ns | 13 ns | 90A | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 167W Tc | TO-220AB | 165 mJ | N-Channel | 13000pF @ 30V | 3.7m Ω @ 90A, 10V | 2.2V @ 93μA | 90A Tc | 79nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TK5A60W,S4VX | Toshiba Semiconductor and Storage | $2.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 380pF | 16 Weeks | Single | 30W | 18ns | 7 ns | 50 ns | 5.4A | 30V | 30W Tc | 600V | N-Channel | 380pF @ 300V | 900m Ω @ 2.7A, 10V | 3.7V @ 270μA | 5.4A Ta | 10.5nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R600P6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r600p6xksa1-datasheets-0980.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 11 ns | 7ns | 14 ns | 33 ns | 7.3A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 28W Tc | TO-220AB | 18A | 0.6Ohm | N-Channel | 557pF @ 100V | 600m Ω @ 2.4A, 10V | 4.5V @ 200μA | 4.9A Tc | 12nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| HUF75545S3ST | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-huf75545s3st-datasheets-0987.pdf | 80V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 6 Weeks | 1.31247g | No SVHC | 10mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | 245 | Single | 30 | 270W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 125ns | 90 ns | 40 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 4V | 270W Tc | 80V | N-Channel | 3750pF @ 25V | 10m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 235nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTY01N100 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/ixys-ixty01n100-datasheets-0995.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 24 Weeks | 80Ohm | 3 | yes | EAR99 | No | GULL WING | 4 | Single | 25W | 1 | R-PSSO-G2 | 12ns | 28 ns | 28 ns | 100mA | 20V | SILICON | DRAIN | SWITCHING | 1000V | 25W Tc | TO-252AA | 0.4A | 1kV | N-Channel | 54pF @ 25V | 80 Ω @ 100mA, 10V | 4.5V @ 25μA | 100mA Tc | 6.9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| TK9A90E,S4X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVIII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 Full Pack | 12 Weeks | 6.000006g | 1 | Single | TO-220SIS | 2nF | 80 ns | 40ns | 35 ns | 140 ns | 9A | 30V | 900V | 50W Tc | 1Ohm | N-Channel | 2000pF @ 25V | 1.3Ohm @ 4.5A, 10V | 4V @ 900μA | 9A Ta | 46nC @ 10V | 1.3 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK10A60E,S5X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk10a60es5x-datasheets-1000.pdf | TO-220-3 Full Pack | 16 Weeks | 6.000006g | 750mOhm | 1 | Single | 10A | 600V | 45W Tc | N-Channel | 1300pF @ 25V | 750m Ω @ 5A, 10V | 4V @ 1mA | 10A Ta | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQR100N04-3M8R_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR820DP-T1-GE3 | Vishay Siliconix | $1.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir820dpt1ge3-datasheets-1002.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 3mOhm | EAR99 | unknown | YES | DUAL | C BEND | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-XDSO-C5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 37.8W Tc | 40A | 70A | 20 mJ | N-Channel | 3512pF @ 15V | 3m Ω @ 15A, 10V | 2.4V @ 250μA | 40A Tc | 95nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN1R8-30PL,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn1r830pl127-datasheets-1003.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 1.8MOhm | 3 | No | e3 | Tin (Sn) | NO | 3 | Single | 270W | 1 | 92 ns | 160ns | 70 ns | 135 ns | 100A | 20V | 30V | SILICON | DRAIN | SWITCHING | 270W Tc | TO-220AB | 30V | N-Channel | 10180pF @ 12V | 1.8m Ω @ 25A, 10V | 2.15V @ 1mA | 100A Tc | 170nC @ 10V | 4.5V 10V | ±20V |
