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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDWS86369-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdws86369f085-datasheets-0455.pdf | 8-PowerTDFN | 5 | 44 Weeks | 172.8mg | 8 | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PDSO-F5 | 65A | SILICON | DRAIN | SWITCHING | 80V | 107W Tj | MO-240AA | 0.0075Ohm | 27 mJ | N-Channel | 2470pF @ 40V | 39ns | 7.5m Ω @ 65A, 10V | 4V @ 250μA | 65A Tc | 46nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDMS7560S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms7560s-datasheets-0666.pdf | 8-PowerTDFN | 5.1mm | 1.05mm | 6.25mm | Lead Free | 5 | 10 Weeks | 90mg | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 2.5W | 1 | FET General Purpose Power | R-PDSO-F5 | 16 ns | 7.4ns | 4.8 ns | 41 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 1.7V | 2.5W Ta 89W Tc | MO-240AA | 220 mJ | 25V | N-Channel | 5945pF @ 13V | 1.7 V | 1.45m Ω @ 30A, 10V | 3V @ 1mA | 30A Ta 49A Tc | 93nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SKI04033 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-ski04033-datasheets-0672.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | yes | NOT SPECIFIED | NOT SPECIFIED | 80A | 40V | 116W Tc | N-Channel | 3910pF @ 25V | 3.8m Ω @ 58.5A, 10V | 2.5V @ 1mA | 80A Tc | 63.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y12-100EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7y12100ex-datasheets-0676.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 260 | 4 | 1 | 30 | 238W | 1 | 12 ns | 18ns | 66 ns | 66 ns | 85A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 238W Tc | MO-235 | 339A | 100V | N-Channel | 5067pF @ 25V | 12m Ω @ 25A, 10V | 4V @ 1mA | 85A Tc | 68nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| TPCA8128,LQ(CM | Toshiba Semiconductor and Storage | $1.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 12 Weeks | 8 | No | 8-SOP Advance (5x5) | 4.8nF | 11ns | 135 ns | 34A | 20V | 30V | 1.6W Ta 45W Tc | P-Channel | 4800pF @ 10V | 4.8mOhm @ 17A, 10V | 2V @ 500μA | 34A Ta | 115nC @ 10V | 4.8 mΩ | 4.5V 10V | +20V, -25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C430NLAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c430nlaft1g-datasheets-0686.pdf | 8-PowerTDFN, 5 Leads | 5 | 5 Weeks | ACTIVE (Last Updated: 7 hours ago) | yes | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 3.8W Ta 110W Tc | 900A | 0.0022Ohm | 493 mJ | N-Channel | 4300pF @ 20V | 1.4m Ω @ 50A, 10V | 2V @ 250μA | 38A Ta 200A Tc | 70nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TK40S10K3Z(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3 | No | DPAK+ | 3.11nF | 22ns | 13 ns | 40A | 20V | 100V | 93W Tc | N-Channel | 3110pF @ 10V | 18mOhm @ 20A, 10V | 4V @ 1mA | 40A Ta | 61nC @ 10V | 18 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR2307ZTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irfr2307ztrlpbf-datasheets-0691.pdf | 75V | 42A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 16MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 65ns | 29 ns | 44 ns | 42A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4V | 110W Tc | TO-252AA | 47 ns | 75V | N-Channel | 2190pF @ 25V | 4 V | 16m Ω @ 32A, 10V | 4V @ 100μA | 42A Tc | 75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| NVMFS5H663NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5h663nlt1g-datasheets-2781.pdf | 8-PowerTDFN, 5 Leads | 5 Weeks | yes | not_compliant | e3 | Tin (Sn) | 60V | 3.7W Ta 63W Tc | N-Channel | 1131pF @ 30V | 7.2m Ω @ 20A, 10V | 2V @ 56μA | 16.2A Ta 67A Tc | 17nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD45P03-12-T4_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd45p0312ge3-datasheets-8650.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 30V | 71W Tc | P-Channel | 3495pF @ 15V | 10mOhm @ 15A, 10V | 2.5V @ 250μA | 50A Tc | 83nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4290A | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 100V | 3.1W Ta | N-Channel | 4525pF @ 50V | 6.4m Ω @ 15.5A, 10V | 2.3V @ 250μA | 15.5A Ta | 95nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF3N80 | Alpha & Omega Semiconductor Inc. | $0.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | FET General Purpose Power | 2.8A | Single | 800V | 35W Tc | N-Channel | 510pF @ 25V | 4.8 Ω @ 1.5A, 10V | 4.5V @ 250μA | 2.8A Tc | 10nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFW630BTM-FP001 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-irfw630btmfp001-datasheets-0633.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | ACTIVE, NOT REC (Last Updated: 1 week ago) | yes | not_compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 245 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 3.13W Ta 72W Tc | 36A | 160 mJ | N-Channel | 720pF @ 25V | 400m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH5110TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irfh5110trpbf-datasheets-0650.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | Lead Free | 5 | 12 Weeks | No SVHC | 12.4MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | 3.6W | 1 | FET General Purpose Power | R-PDSO-N5 | 7.8 ns | 9.6ns | 6.4 ns | 22 ns | 63A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 3.6W Ta 114W Tc | 252A | 93 mJ | 100V | N-Channel | 3152pF @ 25V | 12.4m Ω @ 37A, 10V | 4V @ 100μA | 11A Ta 63A Tc | 72nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| AONS66402 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerVDFN | 18 Weeks | 40V | 6.2W Ta 119W Tc | N-Channel | 5570pF @ 20V | 1.6m Ω @ 20A, 10V | 2.3V @ 250μA | 49A Ta 85A Tc | 105nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS6H848NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs6h848nt1g-datasheets-0152.pdf | 8-PowerTDFN, 5 Leads | 6 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 3.7W Ta 73W Tc | N-Channel | 1180pF @ 40V | 9.4m Ω @ 10A, 10V | 4V @ 70μA | 13A Ta 57A Tc | 16nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMNH4006SPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmnh4006spsq13-datasheets-6482.pdf | 17 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH1110ENH,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 18 Weeks | 850.995985mg | 8 | 1 | 14 ns | 5.2ns | 4.5 ns | 19 ns | 7.2A | 20V | 1.6W Ta 42W Tc | 200V | N-Channel | 600pF @ 100V | 114m Ω @ 3.6A, 10V | 4V @ 200μA | 7.2A Ta | 7nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMYS2D4N04CTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmys2d4n04ctwg-datasheets-0584.pdf | SOT-1023, 4-LFPAK | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.9W Ta 83W Tc | N-Channel | 2100pF @ 25V | 2.3m Ω @ 50A, 10V | 3.5V @ 90μA | 30A Ta 138A Tc | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM60N750CH C5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60n750cprog-datasheets-0410.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 14 Weeks | 600V | 62.5W Tc | N-Channel | 554pF @ 100V | 750m Ω @ 3A, 10V | 4V @ 250μA | 6A Tc | 10.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS4C302NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-nvmfs4c302nt1g-datasheets-0593.pdf | 8-PowerTDFN, 5 Leads | 5 | 7 Weeks | yes | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 30V | 3.75W Ta 115W Tc | 43A | 900A | 0.0017Ohm | 186 mJ | N-Channel | 5780pF @ 15V | 1.15m Ω @ 30A, 10V | 2.2V @ 250μA | 43A Ta 241A Tc | 82nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| DMT3002LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt3002lps13-datasheets-0595.pdf | 8-PowerTDFN | 5 | 24 Weeks | 8 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1.2W Ta 136W Tc | 150A | 0.0025Ohm | 700 mJ | N-Channel | 5000pF @ 15V | 1.6m Ω @ 25A, 10V | 2V @ 1mA | 100A Tc | 77nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| FDP7N50 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdp7n50-datasheets-0597.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | 3 | 5 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 89W | 1 | FET General Purpose Power | 6 ns | 55ns | 35 ns | 25 ns | 7A | 30V | SILICON | SWITCHING | 89W Tc | TO-220AB | 7A | 28A | 0.9Ohm | 270 mJ | 500V | N-Channel | 940pF @ 25V | 900m Ω @ 3.5A, 10V | 5V @ 250μA | 7A Tc | 16.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| AOTF454L | Alpha & Omega Semiconductor Inc. | $0.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | TO-220-3F | 985pF | 13A | 150V | 2.1W Ta 41W Tc | N-Channel | 985pF @ 75V | 94mOhm @ 10A, 10V | 4.6V @ 250μA | 3A Ta 13A Tc | 20nC @ 10V | 94 mΩ | 7V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVD5484NLT4G-VF01 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvd5484nlt4gvf01-datasheets-0614.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 4 Weeks | ACTIVE, NOT REC (Last Updated: 4 days ago) | yes | 60V | 3.9W Ta 100W Tc | N-Channel | 1410pF @ 25V | 17m Ω @ 25A, 10V | 2.5V @ 250μA | 10.7A Ta 54A Tc | 48nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C450NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs5c450nt1g-datasheets-0419.pdf | 8-PowerTDFN, 5 Leads | 16 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.6W Ta 68W Tc | N-Channel | 1600pF @ 25V | 3.3m Ω @ 50A, 10V | 3.5V @ 65μA | 24A Ta 102A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD8453LZ-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd8453lzf085-datasheets-0618.pdf&product=onsemiconductor-fdd8453lzf085-6849775 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 9 Weeks | 260.37mg | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | FDD8453 | Single | 118W | FET General Purpose Power | 10ns | 7 ns | 43 ns | 50A | 20V | 118W Tc | 75A | 40V | N-Channel | 3515pF @ 20V | 6.7m Ω @ 15A, 10V | 3V @ 250μA | 50A Tc | 64nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8441DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8441dbt2e1-datasheets-0564.pdf | 6-UFBGA | 6 | 6 Weeks | 6 | yes | EAR99 | unknown | e3 | MATTE TIN | BOTTOM | BALL | 260 | 6 | 40 | 2.77W | 1 | Other Transistors | Not Qualified | 30ns | 10 ns | 35 ns | -10.5A | 5V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 2.77W Ta 13W Tc | 4.8A | 15A | 0.198Ohm | -20V | P-Channel | 600pF @ 10V | 80m Ω @ 1A, 4.5V | 700mV @ 250μA | 10.5A Tc | 13nC @ 5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||
| BSB104N08NP3GXUSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-bsb104n08np3gxusa1-datasheets-0626.pdf | 3-WDSON | 3 | 26 Weeks | 3 | EAR99 | e4 | Silver/Nickel (Ag/Ni) | Halogen Free | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | 4ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 2.8W Ta 42W Tc | 200A | 0.0104Ohm | 110 mJ | N-Channel | 2100pF @ 40V | 10.4m Ω @ 10A, 10V | 3.5V @ 40μA | 13A Ta 50A Tc | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| AOU4S60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 16 Weeks | yes | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSIP-T3 | 4A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 56.8W Tc | 4A | 16A | 0.9Ohm | 77 mJ | N-Channel | 263pF @ 100V | 900m Ω @ 2A, 10V | 4.1V @ 250μA | 4A Tc | 6nC @ 10V | 10V | ±30V |
