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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| APT47N60BC3G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt47n60bc3g-datasheets-2051.pdf | 600V | 47A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 24 Weeks | 38.000013g | 70mOhm | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 417W | 1 | R-PSFM-T3 | 18 ns | 27ns | 8 ns | 110 ns | 47A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 417W Tc | TO-247AD | 600V | N-Channel | 7015pF @ 25V | 70m Ω @ 30A, 10V | 3.9V @ 2.7mA | 47A Tc | 260nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPAW60R600P7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipaw60r600p7sxksa1-datasheets-2062.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 21W Tc | TO-220AB | 16A | 0.6Ohm | 17 mJ | N-Channel | 363pF @ 400V | 600m Ω @ 1.7A, 10V | 4V @ 80μA | 6A Tc | 9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| RS1G260MNTB | ROHM Semiconductor | $1.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | 8-PowerTDFN | Lead Free | 5 | 20 Weeks | 8 | EAR99 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | R-PDSO-F5 | 26A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3W Ta 35W Tc | 104A | 0.0044Ohm | N-Channel | 2988pF @ 20V | 3.3m Ω @ 26A, 10V | 2.5V @ 1mA | 26A Ta | 44nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STL210N4F7AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F7 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl210n4f7ag-datasheets-1976.pdf | 8-PowerVDFN | 5 | 24 Weeks | ACTIVE (Last Updated: 7 months ago) | YES | DUAL | FLAT | NOT SPECIFIED | STL210 | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 150W Tc | 120A | 480A | 0.0016Ohm | 300 mJ | N-Channel | 3600pF @ 25V | 1.6m Ω @ 16A, 10V | 4V @ 250μA | 120A Tc | 43nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STU2LN60K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std2ln60k3-datasheets-9587.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | STU2LN | Single | 10 ns | 8.5ns | 21 ns | 23.5 ns | 2A | 30V | 600V | 45W Tc | N-Channel | 235pF @ 50V | 4.5 Ω @ 1A, 10V | 4.5V @ 50μA | 2A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT25M100J | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-apt25m100j-datasheets-1983.pdf | 1kV | 25A | SOT-227-4, miniBLOC | Lead Free | 4 | 18 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | 545W | 1 | 44 ns | 40ns | 38 ns | 150 ns | 25A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 545W Tc | 0.33Ohm | N-Channel | 9835pF @ 25V | 330m Ω @ 18A, 10V | 5V @ 2.5mA | 25A Tc | 305nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| APT28M120B2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt28m120b2-datasheets-1851.pdf | 1.2kV | 28A | TO-247-3 Variant | Lead Free | 3 | 18 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Pure Matte Tin (Sn) | SINGLE | 3 | 1 | 50 ns | 31ns | 48 ns | 170 ns | 29A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 1135W Tc | N-Channel | 9670pF @ 25V | 560m Ω @ 14A, 10V | 5V @ 2.5mA | 29A Tc | 300nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXFH44N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfk44n50p-datasheets-1512.pdf | 500V | 44A | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 650W | 1 | 28 ns | 29ns | 27 ns | 85 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 5V | 658W Tc | TO-247AD | 500V | N-Channel | 5440pF @ 25V | 140m Ω @ 22A, 10V | 5V @ 4mA | 44A Tc | 98nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| SIR690DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sir690dpt1ge3-datasheets-1815.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 200V | 104W Tc | N-Channel | 1935pF @ 100V | 35m Ω @ 20A, 10V | 4V @ 250μA | 34.4A Tc | 37nC @ 7.5V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL8N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl8n10f7-datasheets-1877.pdf | 8-PowerVDFN | Lead Free | 5 | 8 | ACTIVE (Last Updated: 7 months ago) | EAR99 | DUAL | FLAT | NOT SPECIFIED | STL8 | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.5W Ta 50W Tc | 35A | 140A | 0.02Ohm | N-Channel | 2000pF @ 50V | 20m Ω @ 4A, 10V | 4.5V @ 250μA | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STL160N4F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F7 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl160n4f7-datasheets-1894.pdf | 8-PowerVDFN | 37 Weeks | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STL160 | NOT SPECIFIED | 40V | 111W Tc | N-Channel | 2300pF @ 25V | 2.5m Ω @ 16A, 10V | 4V @ 250μA | 120A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD85N10F7AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std85n10f7ag-datasheets-1896.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | ACTIVE (Last Updated: 8 months ago) | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | STD85 | NOT SPECIFIED | 1 | R-PSSO-G2 | 70A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 85W Tc | 280A | 0.01Ohm | N-Channel | 3100pF @ 50V | 10m Ω @ 40A, 10V | 4.5V @ 250μA | 70A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FQU1N60CTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqd1n60ctm-datasheets-5234.pdf&product=onsemiconductor-fqu1n60ctu-6850083 | 600V | 1A | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.1mm | 2.3mm | Lead Free | 3 | 4 Weeks | 343.08mg | No SVHC | 11.5Ohm | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | 7 ns | 21ns | 27 ns | 13 ns | 1A | 30V | SILICON | SWITCHING | 4V | 2.5W Ta 28W Tc | 1A | 4A | 600V | N-Channel | 170pF @ 25V | 11.5 Ω @ 500mA, 10V | 4V @ 250μA | 1A Tc | 6.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| BSZ018NE2LSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz018ne2lsatma1-datasheets-1836.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | No SVHC | 8 | no | EAR99 | ULTRA LOW RESISTANCE | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.1W | 1 | S-PDSO-F3 | 4.4ns | 23A | 20V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 2.1W Ta 69W Tc | 0.0024Ohm | N-Channel | 2800pF @ 12V | 1.8m Ω @ 30A, 10V | 2V @ 250μA | 23A Ta 40A Tc | 39nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI4430BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si4430bdyt1ge3-datasheets-0440.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 4.5mOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.6W | 1 | 20 ns | 14ns | 14 ns | 60 ns | 14A | 20V | SILICON | 30V | 30V | 1V | 1.6W Ta | N-Channel | 4.5m Ω @ 20A, 10V | 3V @ 250μA | 14A Ta | 36nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFR210TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfr210trrpbf-datasheets-3671.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 1.5Ohm | 3 | No | 1 | Single | D-Pak | 140pF | 8.2 ns | 17ns | 8.9 ns | 14 ns | 2.6A | 20V | 200V | 2.5W Ta 25W Tc | 1.5Ohm | 200V | N-Channel | 140pF @ 25V | 1.5Ohm @ 1.6A, 10V | 4V @ 250μA | 2.6A Tc | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SIHG80N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg80n60ege3-datasheets-1933.pdf | TO-247-3 | 14 Weeks | e3 | 600V | 520W Tc | N-Channel | 6900pF @ 100V | 30m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 443nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH6010LPSQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmth6010lpsq13-datasheets-1742.pdf | 8-PowerTDFN | 22 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100A | 60V | 2.6W Ta 136W Tc | N-Channel | 2090pF @ 30V | 8m Ω @ 20A, 10V | 3V @ 250μA | 13.5A Ta 100A Tc | 41.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQU2N60CTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-fqd2n60ctm-datasheets-9518.pdf | 600V | 1.9A | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.1mm | 2.3mm | Lead Free | 3 | 6 Weeks | 343.08mg | 4.7Ohm | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | Tin | not_compliant | e3 | NOT SPECIFIED | Single | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | Not Qualified | 9 ns | 25ns | 28 ns | 24 ns | 1.9A | 30V | SILICON | SWITCHING | 2.5W Ta 44W Tc | 7.6A | 600V | N-Channel | 235pF @ 25V | 4.7 Ω @ 950mA, 10V | 4V @ 250μA | 1.9A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| STD47N10F7AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F7 | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-std47n10f7ag-datasheets-1729.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | EAR99 | NOT SPECIFIED | STD47 | NOT SPECIFIED | 45A | 100V | 60W Tc | N-Channel | 1640pF @ 50V | 18m Ω @ 22.5A, 10V | 4.5V @ 250μA | 45A Tc | 25nC @ 10V | 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB120N4F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std120n4f6-datasheets-9720.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 20 Weeks | 4MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB120N | 4 | Single | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 70ns | 20 ns | 40 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 110W Tc | 40V | N-Channel | 3850pF @ 25V | 4m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| STQ1NC45R-AP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -65°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stq1nc45rap-datasheets-1615.pdf&product=stmicroelectronics-stq1nc45rap-6850025 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | 8 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | STQ1 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 500mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 450V | 450V | 3.1W Tc | 0.5A | 2A | 25 mJ | N-Channel | 160pF @ 25V | 4.5 Ω @ 500mA, 10V | 3.7V @ 250μA | 500mA Tc | 7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXFQ50N60P3 | IXYS | $8.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfq50n60p3-datasheets-1666.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.3mm | 4.9mm | Lead Free | 3 | 26 Weeks | 3 | AVALANCHE RATED | 3 | Single | 1.04kW | 1 | FET General Purpose Power | Not Qualified | 31 ns | 20ns | 17 ns | 62 ns | 50A | 30V | SILICON | DRAIN | SWITCHING | 1040W Tc | 125A | 0.145Ohm | 1000 mJ | 600V | N-Channel | 6300pF @ 25V | 145m Ω @ 500mA, 10V | 5V @ 4mA | 50A Tc | 94nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| STD10NF30 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, MESH OVERLAY™, MESH OVERLAY™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std10nf30-datasheets-1556.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | STD10 | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 103W Tc | 10A | 40A | 0.33Ohm | 175 mJ | N-Channel | 780pF @ 25V | 330m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STD3NK60ZT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp3nk60z-datasheets-5037.pdf | 600V | 2.4A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | No SVHC | 3.6Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD3N | 3 | Single | 30 | 45W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 14ns | 14 ns | 19 ns | 2.4A | 30V | SILICON | SWITCHING | 3.75V | 45W Tc | TO-252AA | 9.6A | 600V | N-Channel | 311pF @ 25V | 3.75 V | 3.6 Ω @ 1.2A, 10V | 4.5V @ 50μA | 2.4A Tc | 11.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXTH67N10 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixth67n10-datasheets-1685.pdf | 100V | 67A | TO-247-3 | Lead Free | 3 | 8 Weeks | 25MOhm | 3 | yes | EAR99 | No | 3 | Single | 300W | 1 | FET General Purpose Power | 60ns | 30 ns | 100 ns | 67A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 268A | 100V | N-Channel | 4500pF @ 25V | 25m Ω @ 33.5A, 10V | 4V @ 4mA | 67A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| RCD075N19TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 10 Weeks | EAR99 | not_compliant | e2 | Tin/Copper (Sn98Cu2) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | R-PSSO-G2 | 7.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 190V | 190V | 850mW Ta 20W Tc | 0.347Ohm | N-Channel | 1100pF @ 25V | 336m Ω @ 3.8A, 10V | 2.5V @ 1mA | 7.5A Tc | 30nC @ 10V | 4V 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TT8U2TR | ROHM Semiconductor | $0.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-tt8u2tr-datasheets-1493.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 10 Weeks | 8 | EAR99 | No | DUAL | 1 | 9 ns | 25ns | 45 ns | 55 ns | 2.4A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.25W Ta | 0.105Ohm | P-Channel | 850pF @ 10V | 105m Ω @ 2.4A, 4.5V | 1V @ 1mA | 2.4A Ta | 6.7nC @ 4.5V | Schottky Diode (Isolated) | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y2R5-40HX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk7y2r540hx-datasheets-1703.pdf | SC-100, SOT-669 | 12 Weeks | compliant | 4 | 40V | 190W Ta | N-Channel | 4790pF @ 25V | 2.5m Ω @ 25A, 10V | 3.6V @ 1mA | 120A Ta | 79nC @ 10V | 10V | +20V, -10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN1R7-30YL,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn1r730yl115-datasheets-1638.pdf | SC-100, SOT-669 | 4 | 12 Weeks | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 260 | 4 | 30 | 1 | Not Qualified | R-PSSO-G4 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 109W Tc | MO-235 | 790A | 0.0026Ohm | 241 mJ | N-Channel | 5057pF @ 12V | 1.7m Ω @ 15A, 10V | 2.15V @ 1mA | 100A Tc | 77.9nC @ 10V | 4.5V 10V | ±20V |
