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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STL30N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl30n10f7-datasheets-1748.pdf | 8-PowerVDFN | 6.35mm | 950μm | 5.4mm | Lead Free | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STL30 | 1 | Single | NOT SPECIFIED | 9.8 ns | 14ns | 4.6 ns | 14.8 ns | 30A | 20V | 75W Tc | 100V | N-Channel | 920pF @ 50V | 35m Ω @ 4A, 10V | 4.5V @ 250μA | 30A Tc | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB100N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp100n10f7-datasheets-1960.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 3 | 38 Weeks | 3.949996g | 3 | EAR99 | THROUGH-HOLE | NOT SPECIFIED | STB100N | 1 | Single | NOT SPECIFIED | 1 | 27 ns | 40ns | 15 ns | 46 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-220AB | 0.008Ohm | 400 mJ | 100V | N-Channel | 4369pF @ 50V | 8m Ω @ 40A, 10V | 4.5V @ 250μA | 80A Tc | 61nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FQB33N10TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqb33n10tm-datasheets-1795.pdf | 100V | 33A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 11 Weeks | 1.31247g | No SVHC | 52MOhm | 3 | ACTIVE (Last Updated: 20 hours ago) | yes | EAR99 | Tin | not_compliant | e3 | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 3.75W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 15 ns | 195ns | 110 ns | 80 ns | 33A | 25V | SILICON | DRAIN | SWITCHING | 4V | 3.75W Ta 127W Tc | 100V | N-Channel | 1500pF @ 25V | 52m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 51nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||
| BUK7E13-60E,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-buk7e1360e127-datasheets-2024.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | 2.299997g | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | NO | 3 | 1 | Single | 1 | 10.8 ns | 9.2ns | 9.8 ns | 21.9 ns | 58A | 20V | 60V | SILICON | DRAIN | SWITCHING | 96W Tc | N-Channel | 1730pF @ 25V | 13m Ω @ 15A, 10V | 4V @ 1mA | 58A Tc | 22.9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXTX60N50L2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtx60n50l2-datasheets-2027.pdf | TO-247-3 | 3 | 17 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 960W | 1 | Not Qualified | 60A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 2.5V | 960W Tc | 150A | 0.1Ohm | N-Channel | 24000pF @ 25V | 2.5 V | 100m Ω @ 30A, 10V | 4.5V @ 250μA | 60A Tc | 610nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| STD40P8F6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std40p8f6ag-datasheets-1624.pdf | ACTIVE (Last Updated: 8 months ago) | STD40 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4430BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si4430bdyt1ge3-datasheets-0440.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 4.5mOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.6W | 1 | 20 ns | 14ns | 14 ns | 60 ns | 14A | 20V | SILICON | 30V | 30V | 1V | 1.6W Ta | N-Channel | 4.5m Ω @ 20A, 10V | 3V @ 250μA | 14A Ta | 36nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFR210TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfr210trrpbf-datasheets-3671.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 1.5Ohm | 3 | No | 1 | Single | D-Pak | 140pF | 8.2 ns | 17ns | 8.9 ns | 14 ns | 2.6A | 20V | 200V | 2.5W Ta 25W Tc | 1.5Ohm | 200V | N-Channel | 140pF @ 25V | 1.5Ohm @ 1.6A, 10V | 4V @ 250μA | 2.6A Tc | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHG80N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg80n60ege3-datasheets-1933.pdf | TO-247-3 | 14 Weeks | e3 | 600V | 520W Tc | N-Channel | 6900pF @ 100V | 30m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 443nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH6010LPSQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmth6010lpsq13-datasheets-1742.pdf | 8-PowerTDFN | 22 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100A | 60V | 2.6W Ta 136W Tc | N-Channel | 2090pF @ 30V | 8m Ω @ 20A, 10V | 3V @ 250μA | 13.5A Ta 100A Tc | 41.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQU2N60CTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-fqd2n60ctm-datasheets-9518.pdf | 600V | 1.9A | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.1mm | 2.3mm | Lead Free | 3 | 6 Weeks | 343.08mg | 4.7Ohm | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | Tin | not_compliant | e3 | NOT SPECIFIED | Single | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | Not Qualified | 9 ns | 25ns | 28 ns | 24 ns | 1.9A | 30V | SILICON | SWITCHING | 2.5W Ta 44W Tc | 7.6A | 600V | N-Channel | 235pF @ 25V | 4.7 Ω @ 950mA, 10V | 4V @ 250μA | 1.9A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| STD47N10F7AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F7 | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-std47n10f7ag-datasheets-1729.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | EAR99 | NOT SPECIFIED | STD47 | NOT SPECIFIED | 45A | 100V | 60W Tc | N-Channel | 1640pF @ 50V | 18m Ω @ 22.5A, 10V | 4.5V @ 250μA | 45A Tc | 25nC @ 10V | 10V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB120N4F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std120n4f6-datasheets-9720.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 20 Weeks | 4MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB120N | 4 | Single | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 70ns | 20 ns | 40 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 110W Tc | 40V | N-Channel | 3850pF @ 25V | 4m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 65nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| APT28M120B2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt28m120b2-datasheets-1851.pdf | 1.2kV | 28A | TO-247-3 Variant | Lead Free | 3 | 18 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Pure Matte Tin (Sn) | SINGLE | 3 | 1 | 50 ns | 31ns | 48 ns | 170 ns | 29A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 1135W Tc | N-Channel | 9670pF @ 25V | 560m Ω @ 14A, 10V | 5V @ 2.5mA | 29A Tc | 300nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFH44N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfk44n50p-datasheets-1512.pdf | 500V | 44A | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 650W | 1 | 28 ns | 29ns | 27 ns | 85 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 5V | 658W Tc | TO-247AD | 500V | N-Channel | 5440pF @ 25V | 140m Ω @ 22A, 10V | 5V @ 4mA | 44A Tc | 98nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SIR690DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sir690dpt1ge3-datasheets-1815.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 200V | 104W Tc | N-Channel | 1935pF @ 100V | 35m Ω @ 20A, 10V | 4V @ 250μA | 34.4A Tc | 37nC @ 7.5V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL8N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl8n10f7-datasheets-1877.pdf | 8-PowerVDFN | Lead Free | 5 | 8 | ACTIVE (Last Updated: 7 months ago) | EAR99 | DUAL | FLAT | NOT SPECIFIED | STL8 | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.5W Ta 50W Tc | 35A | 140A | 0.02Ohm | N-Channel | 2000pF @ 50V | 20m Ω @ 4A, 10V | 4.5V @ 250μA | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STL160N4F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F7 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl160n4f7-datasheets-1894.pdf | 8-PowerVDFN | 37 Weeks | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STL160 | NOT SPECIFIED | 40V | 111W Tc | N-Channel | 2300pF @ 25V | 2.5m Ω @ 16A, 10V | 4V @ 250μA | 120A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD85N10F7AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std85n10f7ag-datasheets-1896.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | ACTIVE (Last Updated: 8 months ago) | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | STD85 | NOT SPECIFIED | 1 | R-PSSO-G2 | 70A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 85W Tc | 280A | 0.01Ohm | N-Channel | 3100pF @ 50V | 10m Ω @ 40A, 10V | 4.5V @ 250μA | 70A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FQU1N60CTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqd1n60ctm-datasheets-5234.pdf&product=onsemiconductor-fqu1n60ctu-6850083 | 600V | 1A | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.1mm | 2.3mm | Lead Free | 3 | 4 Weeks | 343.08mg | No SVHC | 11.5Ohm | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | 7 ns | 21ns | 27 ns | 13 ns | 1A | 30V | SILICON | SWITCHING | 4V | 2.5W Ta 28W Tc | 1A | 4A | 600V | N-Channel | 170pF @ 25V | 11.5 Ω @ 500mA, 10V | 4V @ 250μA | 1A Tc | 6.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| BSZ018NE2LSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz018ne2lsatma1-datasheets-1836.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | No SVHC | 8 | no | EAR99 | ULTRA LOW RESISTANCE | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.1W | 1 | S-PDSO-F3 | 4.4ns | 23A | 20V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 2.1W Ta 69W Tc | 0.0024Ohm | N-Channel | 2800pF @ 12V | 1.8m Ω @ 30A, 10V | 2V @ 250μA | 23A Ta 40A Tc | 39nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| PSMN1R7-30YL,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn1r730yl115-datasheets-1638.pdf | SC-100, SOT-669 | 4 | 12 Weeks | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 260 | 4 | 30 | 1 | Not Qualified | R-PSSO-G4 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 109W Tc | MO-235 | 790A | 0.0026Ohm | 241 mJ | N-Channel | 5057pF @ 12V | 1.7m Ω @ 15A, 10V | 2.15V @ 1mA | 100A Tc | 77.9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SIRA22DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira22dpt1re3-datasheets-1727.pdf | PowerPAK® SO-8 | 1.17mm | 14 Weeks | EAR99 | S17-0173-Single | unknown | 1 | 5W | 150°C | 18 ns | 35 ns | 60A | 83.3W Tc | 25V | N-Channel | 7570pF @ 10V | 0.76m Ω @ 15A, 10V | 2.2V @ 250μA | 60A Tc | 155nC @ 10V | 4.5V 10V | +16V, -12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPW24N60C3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spw24n60c3fksa1-datasheets-1733.pdf | 650V | 24.3A | TO-247-3 | 16.03mm | 21.1mm | 5.16mm | Lead Free | 3 | No SVHC | 3 | yes | AVALANCHE RATED | e3 | Tin (Sn) | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 240W | 1 | Not Qualified | 13 ns | 21ns | 14 ns | 140 ns | 24.3A | 20V | SILICON | SWITCHING | 3V | 240W Tc | 72.9A | 0.16Ohm | 780 mJ | 650V | N-Channel | 3000pF @ 25V | 160m Ω @ 15.4A, 10V | 3.9V @ 1.2mA | 24.3A Tc | 135nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| STB3NK60ZT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb3nk60zt4-datasheets-1527.pdf | 600V | 2.4A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | No SVHC | 3 | NRND (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB3N | 3 | Single | 30 | 45W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 14ns | 14 ns | 19 ns | 1.2A | 30V | SILICON | SWITCHING | 3.75V | 45W Tc | 9.6A | 600V | N-Channel | 311pF @ 25V | 3.6 Ω @ 1.2A, 10V | 4.5V @ 50μA | 2.4A Tc | 11.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| STD80N3LL | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STD80 | NOT SPECIFIED | 30V | 75W Tc | N-Channel | 1640pF @ 25V | 5.2m Ω @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 18nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT20M38SVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20m38svrg-datasheets-1787.pdf | 200V | 67A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.08mm | 13.99mm | Lead Free | 2 | 15 Weeks | 3.949996g | 3 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | No | Pure Matte Tin (Sn) | SINGLE | GULL WING | 245 | 3 | 30 | 370W | 1 | R-PSSO-G2 | 14 ns | 21ns | 10 ns | 48 ns | 67A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 370W Tc | 268A | N-Channel | 6120pF @ 25V | 38m Ω @ 500mA, 10V | 4V @ 1mA | 67A Tc | 225nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| STL150N3LLH6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stl150n3llh6-datasheets-1649.pdf | 8-PowerVDFN | Lead Free | 5 | 20 Weeks | 2.4mOhm | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | STL150 | 8 | 30 | 80W | 1 | FET General Purpose Power | R-PDSO-N5 | 17 ns | 18ns | 46 ns | 75 ns | 150A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80W Tc | 30V | N-Channel | 4040pF @ 25V | 2.4m Ω @ 16.5A, 10V | 1V @ 250μA | 150A Tc | 40nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STQ1NC45R-AP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -65°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stq1nc45rap-datasheets-1615.pdf&product=stmicroelectronics-stq1nc45rap-6850025 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | 8 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | STQ1 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 500mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 450V | 450V | 3.1W Tc | 0.5A | 2A | 25 mJ | N-Channel | 160pF @ 25V | 4.5 Ω @ 500mA, 10V | 3.7V @ 250μA | 500mA Tc | 7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFQ50N60P3 | IXYS | $8.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfq50n60p3-datasheets-1666.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.3mm | 4.9mm | Lead Free | 3 | 26 Weeks | 3 | AVALANCHE RATED | 3 | Single | 1.04kW | 1 | FET General Purpose Power | Not Qualified | 31 ns | 20ns | 17 ns | 62 ns | 50A | 30V | SILICON | DRAIN | SWITCHING | 1040W Tc | 125A | 0.145Ohm | 1000 mJ | 600V | N-Channel | 6300pF @ 25V | 145m Ω @ 500mA, 10V | 5V @ 4mA | 50A Tc | 94nC @ 10V | 10V | ±30V |
