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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TK10A60E,S5X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tk10a60es5x-datasheets-1000.pdf | TO-220-3 Full Pack | 16 Weeks | 6.000006g | 750mOhm | 1 | Single | 10A | 600V | 45W Tc | N-Channel | 1300pF @ 25V | 750m Ω @ 5A, 10V | 4V @ 1mA | 10A Ta | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQR100N04-3M8R_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR820DP-T1-GE3 | Vishay Siliconix | $1.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir820dpt1ge3-datasheets-1002.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 3mOhm | EAR99 | unknown | YES | DUAL | C BEND | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-XDSO-C5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 37.8W Tc | 40A | 70A | 20 mJ | N-Channel | 3512pF @ 15V | 3m Ω @ 15A, 10V | 2.4V @ 250μA | 40A Tc | 95nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| PSMN1R8-30PL,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn1r830pl127-datasheets-1003.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 1.8MOhm | 3 | No | e3 | Tin (Sn) | NO | 3 | Single | 270W | 1 | 92 ns | 160ns | 70 ns | 135 ns | 100A | 20V | 30V | SILICON | DRAIN | SWITCHING | 270W Tc | TO-220AB | 30V | N-Channel | 10180pF @ 12V | 1.8m Ω @ 25A, 10V | 2.15V @ 1mA | 100A Tc | 170nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SQD50N04_4M5LT4GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50n044m5lge3-datasheets-4555.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 40V | 136W Tc | N-Channel | 5860pF @ 25V | 3.5mOhm @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 130nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON7140 | Alpha & Omega Semiconductor Inc. | $0.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerWDFN | 18 Weeks | 40V | 46W Tc | N-Channel | 3350pF @ 20V | 2.3m Ω @ 20A, 10V | 2.4V @ 250μA | 50A Tc | 60nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RCX120N25 | ROHM Semiconductor | $4.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-220-3 Full Pack | 3 | 16 Weeks | 3 | EAR99 | No | SINGLE | 3 | 40W | 1 | 33 ns | 65ns | 20 ns | 45 ns | 12A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 2.23W Ta 40W Tc | TO-220AB | 48A | 180mOhm | 10.5 mJ | 250V | N-Channel | 12A Ta | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FQP55N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqp55n10-datasheets-1034.pdf | 100V | 55A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 5 Weeks | 1.8g | 26mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | Single | 155W | 1 | FET General Purpose Power | 25 ns | 250ns | 140 ns | 110 ns | 55A | 25V | SILICON | SWITCHING | 155W Tc | TO-220AB | 220A | 100V | N-Channel | 2730pF @ 25V | 26m Ω @ 27.5A, 10V | 4V @ 250μA | 55A Tc | 98nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||
| SIHLZ34S-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlz34spbf-datasheets-5430.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | D2PAK (TO-263) | 60V | 3.7W Ta 88W Tc | N-Channel | 1600pF @ 25V | 50mOhm @ 18A, 5V | 2V @ 250μA | 30A Tc | 35nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF20SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishay-irfbf20spbf-datasheets-6251.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 8Ohm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 490pF | 8 ns | 21ns | 32 ns | 56 ns | 1.7A | 20V | 900V | 4V | 3.1W Ta 54W Tc | 8Ohm | N-Channel | 490pF @ 25V | 4 V | 8Ohm @ 1A, 10V | 4V @ 250μA | 1.7A Tc | 38nC @ 10V | 8 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFR2407TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfr2407trpbf-datasheets-4163.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 110W Tc | TO-252AA | 30A | 170A | 0.026Ohm | 130 mJ | N-Channel | 2400pF @ 25V | 26m Ω @ 25A, 10V | 4V @ 250μA | 42A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDP5N60NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET-II™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf5n60nz-datasheets-4348.pdf | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | 3 | 5 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 100W | 1 | FET General Purpose Power | Not Qualified | 15 ns | 20ns | 20 ns | 35 ns | 4.5A | 25V | SILICON | SWITCHING | 100W Tc | TO-220AB | 2Ohm | 600V | N-Channel | 600pF @ 25V | 2 Ω @ 2.25A, 10V | 5V @ 250μA | 4.5A Tc | 13nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| SKI10195 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-ski10195-datasheets-0690.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | NOT SPECIFIED | NOT SPECIFIED | 47A | 100V | 116W Tc | N-Channel | 3990pF @ 25V | 17.8m Ω @ 23.4A, 10V | 2.5V @ 1mA | 47A Tc | 55.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP100N08N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipp100n08n3gxksa1-datasheets-0887.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 100W | 1 | Not Qualified | 14 ns | 46ns | 5 ns | 22 ns | 70A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100W Tc | TO-220AB | 280A | 90 mJ | N-Channel | 2410pF @ 40V | 10m Ω @ 46A, 10V | 3.5V @ 46μA | 70A Tc | 35nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| AOTF2606L | Alpha & Omega Semiconductor Inc. | $0.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | TO-220-3F | 4.05nF | 13A | 60V | 2.1W Ta 36.5W Tc | N-Channel | 4050pF @ 30V | 6.5mOhm @ 20A, 10V | 3.5V @ 250μA | 13A Ta 54A Tc | 75nC @ 10V | 6.5 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP260N4F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 22 Weeks | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STP260 | NOT SPECIFIED | 40V | 235W Tc | N-Channel | 5600pF @ 25V | 2.2m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC016N03LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-bsc016n03lsgatma1-datasheets-0878.pdf | 8-PowerTDFN | Contains Lead | 8 | No SVHC | 8 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 125W | 1 | Not Qualified | 8.6ns | 100A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 125W Tc | 32A | 400A | 0.0023Ohm | 290 mJ | N-Channel | 10000pF @ 15V | 1.6m Ω @ 30A, 10V | 2.2V @ 250μA | 32A Ta 100A Tc | 131nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPD50N03S207ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipd50n03s207atma1-datasheets-0916.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 10 Weeks | 3 | EAR99 | ULTRA LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 18 ns | 40ns | 30 ns | 26 ns | 50A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 136W Tc | 200A | 250 mJ | N-Channel | 2000pF @ 25V | 7.3m Ω @ 50A, 10V | 4V @ 85μA | 50A Tc | 68nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPC60R600E6X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 13 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ISP650P06NMXTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-261-4, TO-261AA | 10 Weeks | 60V | 1.8W Ta 4.2W Tc | P-Channel | 1600pF @ 30V | 65m Ω @ 3.7A, 10V | 4V @ 1.037mA | 3.7A Ta | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C645NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-ntmfs5c645nlt3g-datasheets-0159.pdf | 8-PowerTDFN, 5 Leads | 16 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | 60V | 3.7W Ta 79W Tc | N-Channel | 2200pF @ 50V | 4m Ω @ 50A, 10V | 2V @ 250μA | 22A Ta 100A Tc | 34nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF11N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std11n65m5-datasheets-6999.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 17 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STF11 | Single | 85W | 1 | 23 ns | 23 ns | 9A | 25V | SILICON | SWITCHING | 25W Tc | TO-220AB | 9A | 0.48Ohm | 650V | N-Channel | 644pF @ 100V | 480m Ω @ 4.5A, 10V | 5V @ 250μA | 9A Tc | 17nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||
| IPD30N08S222ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipd30n08s222atma1-datasheets-0939.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 10 Weeks | 3 | EAR99 | ULTRA LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 13 ns | 30ns | 20 ns | 33 ns | 30A | 20V | 75V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 136W Tc | 120A | 0.0215Ohm | 240 mJ | N-Channel | 1400pF @ 25V | 21.5m Ω @ 50A, 10V | 4V @ 80μA | 30A Tc | 57nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SQD40N10-25-T4_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd40n1025t4ge3-datasheets-0946.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 100V | 136W Tc | N-Channel | 3380pF @ 25V | 25mOhm @ 40A, 10V | 2.5V @ 250μA | 40A Tc | 70nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP2640N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/microchiptechnology-tp2640n3g-datasheets-0948.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 14 Weeks | 219.992299mg | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Matte Tin (Sn) | BOTTOM | 1 | Single | 1W | 1 | Other Transistors | 10 ns | 15ns | 40 ns | 60 ns | 180mA | 20V | SILICON | SWITCHING | 400V | 1W Ta | -400V | P-Channel | 300pF @ 25V | 15 Ω @ 300mA, 10V | 2V @ 1mA | 180mA Tj | 2.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STP4N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/stmicroelectronics-stp4n90k5-datasheets-0953.pdf | TO-220-3 | 17 Weeks | STP4N | 900V | 60W Tc | N-Channel | 173pF @ 100V | 2.1 Ω @ 1A, 10V | 5V @ 100μA | 3A Tc | 5.3nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK5A65W,S5X | Toshiba Semiconductor and Storage | $4.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-220-3 Full Pack | 16 Weeks | 5.2A | 650V | 30W Tc | N-Channel | 380pF @ 300V | 1.2 Ω @ 2.6A, 10V | 3.5V @ 170μA | 5.2A Ta | 10.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7230DN-T1-GE3 | Vishay Siliconix | $0.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7230dnt1e3-datasheets-3689.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | S-XDSO-C5 | 13 ns | 10ns | 10 ns | 33 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 3V | 1.5W Ta | 9A | 40A | N-Channel | 12m Ω @ 14A, 10V | 3V @ 250μA | 9A Ta | 20nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| NTD5C688NLT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | RoHS Compliant | /files/onsemiconductor-ntd5c688nlt4g-datasheets-0824.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | N-Channel | 27.4m Ω @ 10A, 10V | 2.1V @ 250μA | 7.5A Ta 17A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHT4NQ10T,135 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nexperiausainc-pht4nq10t135-datasheets-0738.pdf | TO-261-4, TO-261AA | 6.35mm | 6.35mm | 6.35mm | Lead Free | 4 | 6 Weeks | 4.535924g | No SVHC | 250MOhm | 4 | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 4 | 30 | 6.9W | 1 | 8 ns | 13ns | 11 ns | 20 ns | 3.5A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 6.9W Tc | 100V | N-Channel | 300pF @ 25V | 250m Ω @ 1.75A, 10V | 4V @ 1mA | 3.5A Tc | 7.4nC @ 10V | 10V | ±20V |
