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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Number of Drivers | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Voltage | Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFK44N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfk44n50p-datasheets-1512.pdf | 500V | 44A | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | 140MOhm | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 650W | 1 | Not Qualified | R-PSFM-T3 | 29ns | 27 ns | 85 ns | 44A | 30V | SILICON | DRAIN | SWITCHING | 658W Tc | 110A | 1700 mJ | 500V | N-Channel | 5440pF @ 25V | 140m Ω @ 22A, 10V | 5V @ 4mA | 44A Tc | 98nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFH26N50P3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/ixys-ixfp26n50p3-datasheets-1510.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | 30 Weeks | 3 | EAR99 | No | Single | 500W | 1 | 21 ns | 38 ns | 26A | 30V | 500V | 500W Tc | N-Channel | 2220pF @ 25V | 230m Ω @ 13A, 10V | 5V @ 4mA | 26A Tc | 42nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMCM4401VNEAZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-pmcm4401vneaz-datasheets-1411.pdf | 4-XFBGA, WLCSP | 4 | 13 Weeks | IEC-60134 | BOTTOM | BALL | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PBGA-B4 | 4.7A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | 400mW Ta 12.5W Tc | 0.054Ohm | N-Channel | 335pF @ 6V | 42m Ω @ 3A, 4.5V | 900mV @ 250μA | 4.7A Ta | 9nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKH70N60C5 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixkh70n60c5-datasheets-1525.pdf | TO-247-3 | Lead Free | 3 | 20 Weeks | 45MOhm | 3 | yes | AVALANCHE RATED | No | 3 | Single | 625W | 1 | FET General Purpose Power | 20ns | 10 ns | 100 ns | 70A | 20V | SILICON | DRAIN | SWITCHING | TO-247AD | 600V | N-Channel | 6800pF @ 100V | 45m Ω @ 44A, 10V | 3.5V @ 3mA | 70A Tc | 190nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH15N100Q3 | IXYS | $3.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh15n100q3-datasheets-1455.pdf | TO-247-3 | 16.26mm | 16.26mm | 5.3mm | Lead Free | 3 | 20 Weeks | 3 | AVALANCHE RATED | unknown | 3 | 1 | Single | 690W | 1 | FET General Purpose Power | 28 ns | 250ns | 30 ns | 15A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 690W Tc | 45A | 1kV | N-Channel | 3250pF @ 25V | 1.05 Ω @ 7.5A, 10V | 6.5V @ 4mA | 15A Tc | 64nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPP040N06NAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp040n06naksa1-datasheets-1388.pdf | TO-220-3 | Contains Lead | 3 | 13 Weeks | no | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | Halogen Free | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 107W | 1 | R-PSFM-T3 | 16ns | 9 ns | 30 ns | 80A | 20V | 60V | SILICON | SWITCHING | 3W Ta 107W Tc | TO-220AB | 20A | 320A | 0.004Ohm | 70 mJ | 60V | N-Channel | 2700pF @ 30V | 4m Ω @ 80A, 10V | 2.8V @ 50μA | 20A Ta 80A Tc | 38nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFK50N85X | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/ixys-ixfk50n85x-datasheets-1394.pdf | TO-264-3, TO-264AA | 19 Weeks | yes | 50A | 850V | 890W Tc | N-Channel | 4480pF @ 25V | 105m Ω @ 500mA, 10V | 5.5V @ 4mA | 50A Tc | 152nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX160N30T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfk160n30t-datasheets-2061.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 160A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 1390W Tc | 440A | 0.019Ohm | N-Channel | 28000pF @ 25V | 19m Ω @ 60A, 10V | 5V @ 8mA | 160A Tc | 335nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SUP57N20-33-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sup57n2033e3-datasheets-1399.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 14 Weeks | 6.000006g | No SVHC | 33mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 3 | 1 | Single | 30 | 3.75W | 1 | FET General Purpose Power | 24 ns | 220ns | 200 ns | 45 ns | 57A | 20V | SILICON | DRAIN | SWITCHING | 4V | 3.75W Ta 300W Tc | TO-220AB | 200V | N-Channel | 5100pF @ 25V | 33m Ω @ 30A, 10V | 4V @ 250μA | 57A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| AOK2500L | Alpha & Omega Semiconductor Inc. | $22.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | TO-247 | 6.46nF | 180A | 150V | 3.1W Ta 500W Tc | N-Channel | 6460pF @ 75V | 6.2mOhm @ 20A, 10V | 3.5V @ 250μA | 14A Ta 180A Tc | 136nC @ 10V | 6.2 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB132N50P3 | IXYS | $20.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfb132n50p3-datasheets-1416.pdf | TO-264-3, TO-264AA | 20.29mm | 26.59mm | 5.31mm | Lead Free | 3 | 26 Weeks | No SVHC | 264 | EAR99 | AVALANCHE RATED | unknown | 3 | Single | 1.89kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 44 ns | 9ns | 8 ns | 72 ns | 132A | 30V | SILICON | DRAIN | SWITCHING | 5V | 1890W Tc | 330A | 0.039Ohm | 3000 mJ | 500V | N-Channel | 18600pF @ 25V | 39m Ω @ 66A, 10V | 5V @ 8mA | 132A Tc | 250nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXFH6N100Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh6n100q-datasheets-1418.pdf | TO-247-3 | 3 | 8 Weeks | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 180W | 1 | FET General Purpose Power | 15ns | 12 ns | 22 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 180W Tc | 6A | 24A | 2Ohm | 700 mJ | 1kV | N-Channel | 2200pF @ 25V | 1.9 Ω @ 3A, 10V | 4.5V @ 2.5mA | 6A Tc | 48nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDPF18N20FT-G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdpf18n20ftg-datasheets-1420.pdf | TO-220-3 Full Pack | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 16 ns | 50ns | 40 ns | 50 ns | 18A | 30V | SILICON | ISOLATED | SWITCHING | 200V | 200V | 35W Tc | TO-220AB | 72A | N-Channel | 1180pF @ 25V | 140m Ω @ 9A, 10V | 5V @ 250μA | 18A Tc | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT180N20X3HV | IXYS | $15.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft180n20x3hv-datasheets-1427.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 200V | 780W Tc | N-Channel | 10300pF @ 25V | 7.5m Ω @ 90A, 10V | 4.5V @ 4mA | 180A Tc | 154nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPZ65R045C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipz65r045c7xksa1-datasheets-1430.pdf | TO-247-4 | 16.13mm | 21.1mm | 5.21mm | Lead Free | 4 | 18 Weeks | 4 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 227W | 1 | 20 ns | 14ns | 7 ns | 82 ns | 46A | 20V | 650V | SILICON | SWITCHING | 227W Tc | 650V | N-Channel | 4340pF @ 400V | 45m Ω @ 24.9A, 10V | 4V @ 1.25mA | 46A Tc | 93nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| DMTH10H010LCT | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth10h010lct-datasheets-1436.pdf | TO-220-3 | 19 Weeks | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 108A | 100V | 2.4W Ta 166W Tc | N-Channel | 2592pF @ 50V | 9.5m Ω @ 13A, 10V | 3.5V @ 250μA | 108A Tc | 53.7nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STU10N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp10n60m2-datasheets-8952.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.2mm | 2.4mm | 3 | 26 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STU10N | 1 | Single | 1 | 8.8 ns | 8ns | 13.2 ns | 32.5 ns | 7.5A | 25V | SILICON | DRAIN | SWITCHING | 85W Tc | 0.6Ohm | 600V | N-Channel | 400pF @ 100V | 600m Ω @ 3A, 10V | 4V @ 250μA | 7.5A Tc | 13.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP60N25X3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/ixys-ixfa60n25x3-datasheets-4574.pdf | TO-220-3 | 19 Weeks | yes | 250V | 320W Tc | N-Channel | 3610pF @ 25V | 23m Ω @ 30A, 10V | 4.5V @ 1.5mA | 60A Tc | 50nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW21N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp21n90k5-datasheets-4557.pdf | TO-247-3 | 24.45mm | Lead Free | 3 | 17 Weeks | 299MOhm | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | SINGLE | STW21N | 3 | 1 | 250W | 1 | FET General Purpose Power | 150°C | R-PSFM-T3 | 17 ns | 27ns | 40 ns | 52 ns | 18.5A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 4V | 250W Tc | 68A | 900V | N-Channel | 1645pF @ 100V | 299m Ω @ 9A, 10V | 5V @ 100μA | 18.5A Tc | 43nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXTN550N055T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, TrenchT2™ | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtn550n055t2-datasheets-1453.pdf | SOT-227-4, miniBLOC | 4 | 17 Weeks | 1 | yes | EAR99 | UL RECOGNIZED, AVALANCHE RATED | not_compliant | 200A | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 55V | 550A | 45 ns | 40ns | 230 ns | 90 ns | 550A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 940W Tc | 3000 mJ | N-Channel | 40000pF @ 25V | 1.3m Ω @ 100A, 10V | 4V @ 250μA | 550A Tc | 595nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| PSMN2R5-60PLQ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn2r560plq-datasheets-1385.pdf | TO-220-3 | 3 | 12 Weeks | 3 | NO | SINGLE | 3 | 349W | 1 | 119ns | 128 ns | 224 ns | 150A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 349W Tc | TO-220AB | 60V | N-Channel | 2.6m Ω @ 25A, 10V | 2.1V @ 1mA | 150A Tc | 223nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH3208LDG | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 3 (168 Hours) | GaNFET (Gallium Nitride) | RoHS Compliant | 2016 | /files/transphorm-tph3208ldg-datasheets-1325.pdf | 3-PowerDFN | 10 Weeks | yes | unknown | 650V | 96W Tc | N-Channel | 760pF @ 400V | 130m Ω @ 13A, 8V | 2.6V @ 300μA | 20A Tc | 14nC @ 8V | 10V | ±18V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT36N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfh36n50p-datasheets-4795.pdf | 500V | 36A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 33 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 540W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27ns | 21 ns | 75 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 5V | 540W Tc | 90A | 0.17Ohm | 1500 mJ | 500V | N-Channel | 5500pF @ 25V | 170m Ω @ 500mA, 10V | 5V @ 4mA | 36A Tc | 93nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFH76N07-12 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh76n0712-datasheets-1335.pdf | 70V | 76A | TO-247-3 | Lead Free | 3 | 8 Weeks | 12MOhm | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 70ns | 55 ns | 130 ns | 76A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 2000 mJ | 70V | N-Channel | 4400pF @ 25V | 12m Ω @ 40A, 10V | 3.4V @ 4mA | 76A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STW20N95DK5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DK5 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw20n95dk5-datasheets-1338.pdf | TO-247-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STW20N | 950V | 250W Tc | N-Channel | 1600pF @ 100V | 330m Ω @ 9A, 10V | 5V @ 100μA | 18A Tc | 50.7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH130N10T | IXYS | $0.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixth130n10t-datasheets-1341.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | yes | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 47ns | 28 ns | 44 ns | 130A | SILICON | DRAIN | SWITCHING | 360W Tc | TO-247AD | 300A | 0.0091Ohm | 500 mJ | 100V | N-Channel | 5080pF @ 25V | 9.1m Ω @ 25A, 10V | 4.5V @ 250μA | 130A Tc | 104nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFH22N50P | IXYS | $2.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh22n50p-datasheets-1343.pdf | 500V | 22A | TO-247-3 | Lead Free | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 350W | 1 | FET General Purpose Power | R-PSFM-T3 | 25ns | 21 ns | 72 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 350W Tc | TO-247AD | 55A | 0.27Ohm | 750 mJ | 500V | N-Channel | 2630pF @ 25V | 270m Ω @ 11A, 10V | 5.5V @ 2.5mA | 22A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXFH220N06T3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiperFET™, TrenchT3™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/ixys-ixfh220n06t3-datasheets-1345.pdf | TO-247-3 | 30 Weeks | yes | unknown | 220A | 60V | 440W Tc | N-Channel | 8500pF @ 25V | 4m Ω @ 100A, 10V | 4V @ 250μA | 220A Tc | 136nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP360LCPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp360lcpbf-datasheets-1347.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 200mOhm | 3 | No | 1 | Single | 280W | 1 | TO-247-3 | 3.4nF | 16 ns | 75ns | 50 ns | 42 ns | 23A | 30V | 400V | 4V | 280W Tc | 200mOhm | 400V | N-Channel | 3400pF @ 25V | 4 V | 200mOhm @ 14A, 10V | 4V @ 250μA | 23A Tc | 110nC @ 10V | 200 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF9610SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf9610spbf-datasheets-1353.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | 3W | 1 | D2PAK | 170pF | 8 ns | 15ns | 8 ns | 1 ns | -1.8A | 20V | 200V | -4V | 3W Ta 20W Tc | 3Ohm | -200V | P-Channel | 170pF @ 25V | 3Ohm @ 900mA, 10V | 4V @ 250μA | 1.8A Tc | 11nC @ 10V | 3 Ω | 10V | ±20V |
